平行耦合双量子点分子A-B干涉仪的电荷及其自旋输运

利用非平衡格林函数方法,理论研究每臂中嵌有一个平行耦合双量子点分子的A-B干涉仪(平行耦合双量子点分子A-B干涉仪)的电荷及其自旋输运性质.无外磁场时,与每臂中嵌有一个量子点的A-B干涉仪相比较,平行耦合双量子点分子A-B干涉仪中电子隧穿变得更加容易发生.当平行耦合双量子点分子A-B干涉仪中引入外磁场时,能够在电导能谱中观察到一个Fano共振和一个反共振,这两种输运状态在磁场取适当数值时能够同时消失.此外,通过调节左右两电极间的偏压、磁通和Rashba自旋轨道相互作用,可以对体系自旋输运进行调控.     

T型双量子点分子Aharonov-Bohm干涉仪的电输运

利用非平衡格林函数方法, 理论研究T型双量子点分子Aharonov-Bohm (A-B)干涉仪的电荷及其自旋输运性质. 通过控制T型双量子点分子内量子点间有无耦合, 能够实现在同一电子能级位置处分别出现共振和反共振状态, 根据此性质, 能将体系设计成量子开关器件. 当将两个完全相同的T型双量子点分子分别嵌入A-B干涉仪两臂中时, 磁通取适当数值, 能够出现完全的量子相消干涉. 通过调节量子点能级、左右两电极间的偏压和Rashba自旋轨道相互作用强度, 可对体系自旋流进行调控. 关键词： 非平衡格林函数 T型双量子点分子 Aharonov-Bohm干涉仪 自旋输运     

δ势垒对多臂量子环中持续电流的影响

提出了含δ势垒的多臂量子环模型.研究发现总磁通为零时,持续电流随半导体环增大发生非周期性振荡,下臂因含δ势垒而获得最小的平均持续电流.AB磁通增强时,持续电流会发生周期性等幅振荡,并与电极的磁矩方向以及隧穿电子的自旋方向相关.两电极磁矩方向平行时,Rashba自旋轨道耦合具有改变持续电流相位和相位差的效应;两电极磁矩方向反平行时,Rashba自旋轨道耦合具有改变持续电流振幅的效应.各臂之间持续电流的不同与臂长和磁通分布的差异相关.在一定条件下,两种波函数所对应的持续电流是可分离的. 关键词： 多臂量子环 持续电流 δ势垒 Rashba自旋轨道耦合     

含stubs量子波导系统的电子自旋极化输运性质

理论上研究了含stubs的Rashba自旋轨道耦合（spin-orbit coupling, SOC）量子波导系统的自旋极化输运性质. 利用晶格格林函数方法,发现由于stubs和SOC产生的势阱使系统中出现束缚态,这些束缚态与传播态之间相互干涉导致电导中出现Fano共振结构,同时在对应的自旋极化率中也出现Fano共振或反共振结构. 此外,由于系统结构的突变使电子被反向散射和量子干涉效应,电导中出现一系列的共振峰. 但是,当系统加上外磁场后,所有这些效应都被抑制, 系统重新出现量子化电导, 同时自旋电导也出 关键词： 量子波导 自旋极化输运 自旋轨道耦合     

特殊结构的多臂量子环的持续电流

提出了中臂弯曲的多臂量子环模型,且是上臂最短和下臂最长的不等臂量子环.研究发现：总磁通为零时,持续电流随半导体环增大发生非周期性振荡,并与电极的磁矩方向及隧穿电子的自旋方向相关,下臂因为最长而获得最小的平均持续电流.AB磁通增强时,持续电流会发生周期性振荡,各臂之间明显出现相互制约的现象.各臂持续电流之间的差异与臂长和磁通分布相关,Rashba自旋轨道耦合具有改变持续电流相位和相位差的效应.在一定条件下,两种波函数所对应的持续电流是可分离的. 关键词： 多臂量子环 持续电流 Rashba自旋轨道耦合     

正多边形量子环自旋输运的严格解

研究了存在Rashba自旋轨道相互作用的正多边形量子环的自旋输运特性．采用量子网络的典型方法和Landauer-Büttiker电导公式,严格求解了电子通过正多边形量子环的散射问题,并得到了电导的解析表达式．通过数值计算和解析分析,进一步研究了量子环电导随电子波矢和自旋轨道相互作用强度变化的复杂形式,包括源于自旋轨道耦合相互作用的电导零点系列．特别地,还研究了正多边形环的边数趋近于无穷的极限情形,与直接采用圆环模型获得的结果完全一致． 关键词： Rashba自旋-轨道相互作用 量子网络 量子输运     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

含双δ势垒三臂量子环的透射概率和持续电流

研究了含双δ势垒三臂量子环的透射概率和持续电流,研究结果表明：透射概率和持续电流都随半导体环尺寸的增大发生振荡,透射概率和持续电流与电子自旋和铁磁电极磁矩的取向相关．量子环尺寸取固定值时,透射概率和持续电流都会随AB磁通的增加发生周期性等幅振荡．δ势垒和Rashba自旋轨道耦合对透射概率或持续电流有着不同的影响． 关键词： 透射概率 持续电流 Rashba自旋轨道耦合 δ势垒')" href="#">δ势垒     

自旋轨道耦合量子点系统中的量子相干

研究了自旋轨道耦合量子点中的量子相干效应.运用输运电子的全计数统计方法计算系统的平均电流、散粒噪声和偏斜,发现体系存在自旋轨道耦合作用时,散粒噪声值随自旋轨道耦合常数的增加而减小.更重要的是,电流、噪声和偏斜随磁通周期性波动,并且波动周期不受自旋轨道耦合强度大小、自旋极化率以及动力学耦合不对称的影响.     

自旋场效应晶体管中隧道磁阻的势垒相关反转效应

考虑自旋场效应晶体管中Rashba自旋轨道相互作用和自旋输运量子相干性,研究了势垒强度对自旋场效应晶体管的自旋相关量子输运的影响. 研究发现,势垒强度较低时,隧道结电导随Rashba自旋轨道相互作用强度的变化呈现明显的振荡现象,势垒强度较高时,电导表现出明显的势垒相关“电导开关”现象. 当势垒强度逐渐增强时,平行结构电导呈现出单调下降趋势,而反平行结构电导产生波动,这种波动导致该隧道磁阻也随势垒强度的变化表现出振荡现象,且在合适的准一维电子气厚度情况下隧道磁阻值可以产生正负反转,这个效应将会在基于自旋的电子器件信息的存储上获得应用. 关键词： 自旋场效应管 开关效应 量子相干 隧道磁阻     

Photon-assisted electronic and spin transport through two T-shaped three-quantum-dot molecules embedded in an Aharonov-Bohm interferometer

We investigate the time-modulated electronic and spin transport properties through two T-shaped three-quantum-dot molecules embedded in an Aharonov-Bohm(A-B) interferometer. By using the Keldysh non-equilibrium Green's function technique, the photon-assisted spin-dependent average current is analyzed. The T-shaped three-quantum-dot molecule A-B interferometer exhibits excellent controllability in the average current resonance spectra by adjusting the interdot coupling strength, Rashba spin-orbit coupling strength, magnetic flux, and amplitude of the time-dependent external field.Efficient spin filtering and multiple electron-photon pump functions are exploited in the multi-quantum-dot molecule A-B interferometer by a time-modulated external field.     

Quantum pump in an Aharonov-Bohm interferometer with a quantum dot driven by an ac field

With the help of the nonequilibrium Green's function method, the quantum pump in an Aharonov-Bohm interferometer with a quantum dot driven by an ac field are studied theoretically. The ac field applied to the quantum dot may give rise to a pumped charge current at zero-bias voltage in the presence of a nonzero magnetic flux. The possibility of manipulating the pumped charge current is explored by tuning the dot level, the magnetic flux, the coupling strength and the ac field. By making use of various tunings, the magnitude and direction of the pumped charge current can be well controlled. Furthermore, the possibility to generate a pure spin current in the presence of the Rashba spin-orbit interaction has been discussed, which provides an idea for the design of a spin pump electrically.     

Conductance properties in spin field-effect transistors

Conductance properties in spin field-effect transistors (SFET) are studied by taking into account the Rashba spin-orbit coupling strength, the presence of external magnetic field, the angle between the direction of magnetization and the conductance band mismatch between the ferromagnetic contacts and the channel. It is shown that the conductance of the SFET has high peaks while the value of external magnetic field varies. These peaks become more and more pronounced with the potential barriers strength increasing. The conductance peaks also appear by increasing the strength of the spin-orbit coupling. It is found that the conductance exhibits quantum oscillating behavior when varying the angle between the direction of magnetization in the two contacts. The influence of conductance band mismatch between the contacts and channel is also discussed.     

Coherent charge transport in ferromagnet/semiconductor nanowire/ferromagnet double barrier junctions with the interplay of Rashba spin-orbit coupling,induced superconducting pair potential,and external magnetic field

By solving the Bogoliubov-de Gennes equation, the influence of the interplay of Rashba spin-orbit coupling, induced superconducting pair potential, and external magnetic field on the spin-polarized coherent charge transport in ferromagnet/semiconductor nanowire/ferromagnet double barrier junctions is investigated based on the Blonder-Tinkham-Klapwijk theory. The coherence effect is characterized by the strong oscillations of the charge conductance as a function of the bias voltage or the thickness of the semiconductor nanowire, resulting from the quantum interference of incoming and outgoing quasiparticles in the nanowire. Such oscillations can be effectively modulated by varying the strength of the Rashba spin-orbit coupling, the thickness of the nanowire, or the strength of the external magnetic field. It is also shown that two different types of zero-bias conductance peaks may occur under some particular conditions, which have some different characteristics and may be due to different mechanisms.     

Transport through a triple quantum dot system: Formation of resonance band and its application as a spin filter

A three-quantum-dot spin filter based on nonequilibrium Green?s function technique is proposed with external magnetic flux, Rashba spin orbit interaction, and intradot coulomb interaction taken into consideration. Numerical results indicate a spin filter can be made efficient by adjusting external magnetic flux and Rashba spin orbit interaction. Moreover, the formation of a resonance band is discussed through calculation. It is observed that the possibility of transition from one peak to other three peaks in the conductance spectrum increases with increasing interdot coupling strength.     

Spin-Dependent Electron Properties of a Triple-Terminal Quantum Dot Structure

Electron transport properties of a triple-terminal Aharonov-Bohm interferometer are theoretically studied. By applying a Rashba spin-orbit coupling to a quantum dot locally, we find that remarkable spin polarization comes about in the electron transport process with tuning the structure parameters, i.e., the magnetic flux or quantum dot levels. When the quantum dot levels are aligned with the Fermi level, there only appear spin polarization in this structure by the presence of an appropriate magnetic flux. However,in absence of magnetic flux spin polarization and spin separation can be simultaneously realized with the adjustment of quantum dot levels, namely, an incident electron from one terminal can select a specific terminal to depart from the quantum dots according to its spin state.     

Quantum Hall effect in a two-dimensional electron gas with spin-orbit coupling in the field of a surface superlattice

The Hall conductance of a two-dimensional electronic system with Rashba spin-orbit coupling in the presence of an external periodic potential of a superlattice and a perpendicular magnetic field has been calculated. The calculations were performed for an electron gas with parameters typical both of a system with weak spin-orbit coupling (AlGaAs/GaAs) and a system with relatively strong Rashba coupling (InGaAs/InAs).     

负带隙HgCdTe体材料的磁输运特性研究

通过单晶生长了Cd组分为0.1的p型HgCdTe体材料,并制备了具有倒置型能带序的HgCdTe场效应器件.通过磁输运测试,在负带隙HgCdTe体材料中观察到明显的量子霍尔平台效应和Shubnikov-de Haas(SdH)振荡效应,证明样品具有较好的质量.利用SdH振荡对1/B关系的快速傅里叶变换,得到了样品的零场自旋分裂能约为26.55 meV,证明样品中存在强自旋-轨道耦合作用.进一步分析SdH中的拍频节点估算了样品中的有效g因子约为–11.54.