共查询到14条相似文献,搜索用时 62 毫秒
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本文报道了采用分子束外延技术制备的三色InAs/GaAs量子点红外探测器. 器件采用nin型结构, 吸收区结构是在InGaAs量子阱中生长含有AlGaAs插入层的InAs量子点, 器件在77 K下的红外光电流谱有三个峰值: 6.3, 10.2和11 μm. 文中分析了它们的跃迁机制, 并且分别进行了指认. 因为有源区采用了不对称结构, 所以器件在外加偏压正负方向不同时, 光电流谱峰值的强度存在一些差异. 不论在正偏压或者负偏压下, 当偏压达到较高值, 再进一步增大偏压时, 都出现了对应于连续态的跃迁峰强度明显下降的现象, 这是由量子点基态与阱外连续态的波函数交叠随着偏压进一步增大而迅速减小导致的. 相似文献
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设计并模拟计算了延伸波长至2.6 μm的复合盖层材料PIN结构In0.82Ga0.18As红外探测器,即PNN型盖层、PIN结构的In0.82Ga0.18As红外探测器。研究了不同厚度及载流子浓度的PNN盖层对探测器性能的影响。研究结果表明:在In0.82Al0.18As厚度为200 nm且载流子浓度为2E18、InAs0.6P0.4 厚度为50 nm且载流子浓度为2E17、In0.82Ga0.18As厚度为50 nm且载流子浓度为2E16时,探测器表现出最佳的性能。与传统PIN结构探测器相比,其相对光谱响应度仅降低10%,暗电流降低了1个数量级。计算分析了不同工作温度下的暗电流,结果显示:在120~250 K时,暗电流主要为缺陷隧穿电流;在250~300 K时,暗电流主要为带间隧穿电流;当温度大于300 K时,暗电流主要为产生-复合电流和扩散电流。 相似文献
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基于载流子在量子结构中的输运理论研究了甚长波量子阱红外探测器(峰值响应波长15μm,量子阱个数大于40)的载流子的输运性质.研究结果表明,在甚长波量子阱红外探测器中,电流密度一般很低,暗电流主要来源于能量高于势垒边的热激发电子.通过薛定谔方程和泊松方程以及电流的连续性方程的自洽求解,发现外加偏压下电子浓度在甚长波器件各量子阱的分布发生较大变化,电场在整个器件结构上呈非均匀分布,靠近发射极层的势垒承担的电压远远高于均匀分布的情形.平带模型假定电压在器件体系上均匀分布,导致小偏压下的理论计算值远远低于实验值.
关键词:
甚长波量子阱红外探测器
量子波输运
暗电流 相似文献
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研究了响应波长在15μm附近的超长波GaAs/AlGaAs量子阱红外探测器在不同外加偏压下的光电流谱特性.光电流谱上的两个主要由于阱宽随机涨落而呈现为高斯线形的响应峰被分别指认为量子阱基态E0到第一激发态E1和第三激发态E3的跃迁.跃迁峰随着器件上外加偏压的增大而出现线性红移现象,认为这种变化起源于激发态与基态对量子阱结构中势变化敏感性的不同,采用传输矩阵方法并考虑到电子交互作用修正进行的理论计算在定量上解释了实验结果.
关键词:
量子阱红外探测器
超长波
光电流
传输矩阵 相似文献
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考虑微米尺度和纳米尺度下电子传输对激发能的共同影响,基于电子漂移速度对外加电场的依赖,研究外加电场和外加温度对量子点红外探测器暗电流特性的影响.结果表明:外加电场在0~25kV/cm范围内时,暗电流模型和实验数据变化相吻合.暗电流随着外加电场的增加而增加,并且当外加电场小于6kV/cm时暗电流增加迅速,而当外加电场大于6kV/cm时暗电流增加缓慢.暗电流随着外加温度的增加迅速增加.该研究为量子点红外探测器的优化设计和性能提高提供了理论参考. 相似文献
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常压介质阻挡放电氧气大气谱带分析 总被引:2,自引:0,他引:2
观测了氧气常压介质阻挡放电过程产生的发射光谱,利用氧气大气谱带(b 1Σ+g→X 3Σ-g)转动结构的拟合光谱与实验光谱的比较和氧原子发射谱线测量了等离子体的气体温度和电子温度; 通过分析氧气常见激发态(a 1Δg,b 1Σ+g和A 3Σ+g)的产生和猝灭途径,结合氧气激发、解离过程的动力学数据,探讨了在大气压介质阻挡放电条件下氧气大气谱带的产生原因。结果表明:在该实验条件下氧气常压介质阻挡放电时电子温度(11 800±400) K远高于气体温度(650±20) K,由于a 1Δg的辐射跃迁概率太小,且A 3Σ+g在高气压下很容易被猝灭,实验中没有观测到这两个激发态的辐射,而测到了具有清晰转动结构的氧气大气谱带。 相似文献
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介绍了一种用滤光片估测红外焦平面探测器截止波长的方法。这种方法只需测量出加上滤光片后器件输出响应电压的损失率就可以通过理论计算估算出器件截止波长的大小。通过一个实际的例子说明了该方法的计算过程与结果,并与用单色仪所测得的结果进行了比较,二者符合得比较好。在实际应用中可作为一种筛选器件的快速判断方法。 相似文献
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《中国物理 B》2021,30(5):50702-050702
A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demonstrated by a modified silicon semiconductor processing technique. In this route, multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon, and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation. The fabricated prototype device exhibits an excellent photoelectric response performance. With a direct current(DC) bias voltage of-2.3 V, the device detectivity to blackbody irradiation is as high as 5×10~(13) cm·Hz~(1/2)/W, which corresponds to a device responsivity of nearly 4.6 A/W, showing their potential applications in infrared detection, infrared astrophysics, and extraterrestrial life science. In particular, the developed device preparation process is compatible with that for the CMOS-circuit, which greatly reduces the manufacturing cost. 相似文献
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Jordana Bandaru Jeffrey W. Beeman Eugene E. Haller Stacy Samperi Nancy M. Haegel 《Infrared Physics & Technology》2002,43(6):353-360
Extended long wavelength response to 200 μm (50 cm−1) has been observed in Ge:Sb blocked impurity band (BIB) detectors with ND1×1016 cm−3. The cut-off wavelength increases from 150 μm (65 cm−1) to 200 μm (50 cm−1) with increasing bias. The responsivity at long wavelengths was lower than expected. This can be explained by considering the observed Sb diffusion profile in a transition region between the blocking layer and active layer. BIB modeling is presented which indicates that this Sb concentration profile increases the electric field in the transition region and reduces the field in the blocking layer. The depletion region consists partially of the transition region between the active and blocking layer, which could contribute to the reduced long wavelength response. The field spike at the interface is the likely cause of breakdown at a lower bias than expected. 相似文献
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Low temperature electrical measurements of conductivity, the Hall effect and magnetoconductance were performed on a degenerate AlGaN sample. The sample exhibited negative magnetoconductance at low magnetic fields and low temperatures, with the magnitude being systematically dependent on temperature. The measured magnetoconductance was compared with models proposed previously by Sondheimer and Wilson [Proc. R. Soc. Lond. Ser. A 190 (1947) p. 435] and Lee and Ramakrishan [Rev. Mod. Phys. 57 (1985) p. 287]. Data were analyzed as the sum of the contribution of a two-band and electron–electron interactions to the magnetoconductance, applying these models to describe the observed behavior. Least-squares fits to the data are presented. In the sample, magnetoconductance can be explained reasonably well by assuming these contributions to the measured magnetoconductance. It was found that theoretical and experimental data were in excellent agreement. 相似文献