弱耦合GaAs/AlGaAs/InGaAs双势阱隧穿结构的磁隧穿特性研究

研究了低温(15 K)条件下弱耦合GaAs/AlGaAs/InGaAs双势阱结构的纵向磁隧穿特性. 研究表明,器件在零偏压下处于共振状态. 通过分析不同偏压下的磁电导振荡曲线,可以得到双量子阱中的基态束缚能级随偏压的变化规律,从而可以确定隧穿电流峰对应的隧穿机制. 所得结果可为弱耦合双量子点器件的制备提供基础. 关键词： 双量子阱 隧穿结构 磁电导振荡     

双势垒结构Cu-Al2O3-MgF2-Au隧道结中的电子共振隧穿与发光特性研究

制备了Cu-Al₂O₃-MgF₂-Au双势垒隧道发光结,分析了结加上一定偏压后的电子隧穿过程.指出由于构成隧道结的绝缘栅薄膜的厚度及禁带宽度的不同而导致双势垒中能级产生分裂,使电子通过栅区时产生共振隧穿现象.根据这一现象,并结合结的I-V特性,对结的发光性能进行了讨论.这种结构的结与普通单势垒MIM结相比,其发光效率(10^-6—10^-5)提高了近一个数量级,且发光光谱的波长范围及谱峰均向短波长方向 关键词：     

NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导和隧穿磁电阻

在NM/FI/FI/NM型双自旋过滤隧道结(此处NM为非磁金属层，FI为铁磁绝缘体或半导体层)的基础上，我们提出一种NM/FI/NI/FI/NM新型双自旋过滤隧道结(此处NI表示非磁绝缘体或半导体层). 插入NI层的目的是为了避免原双自旋过滤隧道结中相邻FI层界面处磁的耦合作用所导致的对隧穿磁电阻的不利影响. 在自由电子近似的基础上，利用转移矩阵方法，对NM/FI/NI/FI/NM新型双自旋过滤隧道结的隧穿电导、隧穿磁电阻与FI层及NI层厚度的变化关系以及随偏压的变化关系进行了理论研究.计算结果表明，在NM/FI/NI/FI/NM新型双自旋过滤隧道结中仍可以得到很大的TMR值. 关键词： 双自旋过滤隧道结 隧穿磁电阻 非磁绝缘(半导)体间隔层     

电子双势垒量子隧穿的散射矩阵方法及其数值模拟

采用散射矩阵的方法研究了电子在由两个方势垒组成的双势垒结构中的隧穿特性.将电子在双势垒中的隧穿过程分为相干输运和非相干输运两部分来研究,相干输运导致了隧穿透射系数随中间层厚度变化产生量子振荡,而非相干输运导致了振荡振幅的衰减.双势垒总的透射系数与势垒高度、入射和出射波矢的匹配性有关,数值计算的结果证实了相关结论.     

用SQUID显微图像技术检验高温超导层间隧穿模型

在１９９８年２月２０日出版的期刊《Ｓｃｉｅｎｃｅ》上,同时发表了３篇关于高温超导的文章．其一是Ａｎｄｅｒｓｏｎ关于层间隧穿（ＩＬＴ）模型的理论文章［１］;其二是Ａｎｄｅｒｓｏｎ的同事们的关于Ｔｌ２Ｂａ２ＣｕＯ６＋δ（Ｔｌ－２２０１）ＳＱＵＩＤ显微图像...     

一维三方势垒量子隧穿特性的研究

本文通过严格求解定态薛定谔方程,研究了一维对称三方势垒的量子隧穿特性,解析地给出透射系数的精确表达式,并且数值模拟了势垒高度、势垒间距以及粒子入射能量对透射系数的影响.结果表明：当取不同的势垒宽度,或者不同的粒子入射能量时,透射系数随着势垒间距的增加而呈现出明显的周期式振荡.将一维对称双方势垒和三方势垒进行比较,透射系数随着势垒间距的增大,均呈现周期性振荡,并且振荡周期相同,但三方势垒振荡更剧烈,振幅越大,并且三方对称势垒是双峰曲线,而双方对称势垒是单峰曲线.该特性为设计新型纳米器件以及共振隧穿量子器件等提供理论指导.     

DNA分子电输运特性的相干隧穿研究

把DNA分子的碱基堆积相互作用视为多个单势垒的组合,电荷逐级隧穿随电压变化的势垒,利用相干隧穿理论计算了8 bp和30 bp的均匀序列DNA分子两端在硫化和非硫化情况下的伏安特性曲线,得到了与实验一致的结论.     

量子相空间中对称受驱双势阱系统的量子隧穿动力过程

本文以纠缠轨线分子动力学方法研究对称受驱双势阱系统的量子隧穿动力学过程.驱动力的幅度和频率改变将对量子隧穿动力学过程产生巨大的影响,这为人们自主控制这一重要的过程提供理论基础.当体系的经典动力学呈现混沌状态时,它的量子动力学过程将发生显著的变化.在强驱动力作用下,双势阱系统的量子共振频率隧穿和非共振频率隧穿因为混沌行为的出现明显增强.通过对比相空间中具有相同初始态的纠缠轨线和经典轨线演化,我们给出量子隧穿过程清晰的物理图像.最后,我们讨论量子隧穿动力学过程中体系不确定度的演化和反映波包动力学过程的自关联函数演化.     

双磁垒中电子的隧穿效应

采用平面波近似数值方法解非均匀磁场中电子的薛定谔方程,计算了在半导体异质结上沉积带状导电薄膜(通有电流)或I型超导材料产生的两种类型的双磁垒体系的电子隧道结构,以及相应的弹射(ballistic)电导,得知这两种体系的电子隧穿情形差异较大,而它们的电导结构却很相似.     

退火工艺对LaTiON和HfLaON存储层金属-氧化物-氮化物-氧化物-硅存储器特性的影响

采用反应溅射法, 分别制备以LaTiON, HfLaON为存储层的 金属-氧化物-氮化物-氧化物-硅 电容存储器, 研究了淀积后退火气氛(N₂, NH₃)对其存储性能的影响. 分析测试表明, 退火前LaTiON样品比HfLaON 样品具有更好的电荷保持特性, 但后者具有更大的存储窗口 (编程/擦除电压为+/-12 V时4.8 V); 对于退火样品, 由于NH₃的氮化作用, NH₃退火样品比N₂退火样品表现出更快的编程/擦除速度、更好的电荷保持特性和疲劳特性. 当编程/擦除电压为+/-12 V时, NH₃退火HfLaON样品的存储窗口为3.8 V, 且比NH₃退火LaTiON样品具有更好的电荷保持特性和疲劳特性.     

Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO₂/SiO₂ 800 nm high-reflective (HR) coatings, with and without SiO₂ protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO₂ protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO₂ protective layer for HfO₂/SiO₂ HR coating with SiO₂ protective layer. The relation of LIDT for two kinds of HfO₂/SiO₂ HR coatings in calculation agrees with the experiment result.     

GaN ultraviolet Schottky barrier photodetectors with ZrO2 or SiO2 insulators

Organic light-emitting diodes (OLEDs) with high luminance efficiency were successfully fabricated using the LiF/N,N′-bis(1-naphyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) carrier balance structures. It was found that the insertion of the LiF/NPB carrier balance structures can balance the charge injection and transport, which is helpful in enhancing the performance of OLEDs. It was also found that we can achieve the best performance from the OLED with three pairs of LiF/NPB (0.3 nm/15 nm) structures. The luminance and transport efficiency were both enhanced with the increase in the numbers of pairs of LiF/NPB carrier balance structures. We can attribute the improvement to the better carrier balance at the device interface.     

超亲水性SiO2-TiO2纳米颗粒阵列结构的制备与性能研究

用分子自组装的方法在玻璃衬底上分别制备了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构. 其中,SiO₂ 纳米颗粒层用旋涂法制备,得到密排阵列结构,而TiO₂纳米颗粒层则用浸渍提拉法制备. 文章分析了TiO₂纳米颗粒层和SiO₂-TiO₂复合纳米颗粒阵列结构的理论粗糙度,并通过扫描电子显微镜研究了它们的微观结构,用接触角 关键词： 自清洁 表面粗糙度 光催化 分子自组装     

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.     

SiO2的赝晶化及AlN/SiO2纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列不同SiO₂层厚度的AlN/SiO₂纳米多层膜，利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能，研究了SiO₂层在多层膜中的晶化现象及其对多层膜生长方式及力学性能的影响. 结果表明，由于受AlN六方晶体结构的模板作用，溅射条件下以非晶态存在的SiO₂层在其厚度小于0.6 nm时被强制晶化为与AlN相同的六方结构赝晶体并与AlN形成共格外延生长. 由于不同模量的两调制层存在晶格错配度，多层膜中产生了拉、压交变的应力场，使得多层膜产生硬度升高的超硬效应. SiO₂随层厚的进一步增加又转变为以非晶态生长，多层膜的外延生长结构受到破坏，其硬度也随之降低. 关键词： 2纳米多层膜')" href="#">AlN/SiO₂纳米多层膜 赝晶化 应力场 超硬效应     

Giant magneto-impedance effect of magnetron sputtered Ni80Fe20/SiO2/Cu composite wires

In this work, Ni₈₀Fe₂₀/Cu and Ni₈₀Fe₂₀/SiO₂/Cu composite wires of Cu core 100 μm in diameter and coated with a layer of Ni₈₀Fe₂₀ were produced by RF magnetron sputtering. In order to obtain a uniform coating, the wires were spun during sputtering. The influences of the magnetic coating and insulator thickness on the GMI effect of the composite wires were investigated. The results showed that the film thickness has a significant effect on the magnitude and the optimum frequency of the GMI effect. After the addition of an insulator layer, the MI ratio of the composite wires was observed to change with varying thickness of the insulator layer. This observed trend was attributed to the interaction between the conductive layer and the high-permeability magnetic coating.     

The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method

We produced dielectric stacks composed of ALD SiO₂ and ALD Al₂O₃, such as SiO₂/Al₂O₃, Al₂O₃/SiO₂, and SiO₂/Al₂O₃/SiO₂, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO₂/Al₂O₃ shows lowest leakage current for negative bias region below 6.4 V, and Al₂O₃/SiO₂ showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al₂O₃ and SiO₂/Al₂O₃. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO₂ (6.5 nm)/Al₂O₃ (12.6 nm) is −6.4 V, which agrees well with the experimental observation (−6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO₂ layer.     

Study on adsorption and reaction mechanism of preparation of TiO2/SiO2 by adsorption phase reactor technique

This paper approaches the evolution of adsorption layer with temperature under different water concentrations. EDX and X-ray diffraction (XRD) indicated that under low water concentration (LWC), there was a sharp decrease in TiO₂ quantity curve and grain size curve between 40 °C and 60 °C. But under high water concentration (HWC), TiO₂ quantity and grain size both rose continually. In transmission electron microscopy (TEM) picture, the characteristic of samples of LWC and HWC at low temperature were similar, whereas they became quite different at high temperature. These phenomena manifest that the effects of adsorption and reaction alter at different conditions. Under LWC, adsorption mechanism dominates the process. Under HWC, the chief mechanism at low temperature was similar to that of LWC and at high temperature the major reaction region switches from adsorption to alcohol bulk. Based on the characteristics of adsorption on silica surface, the phenomenology theory dealt with formation of adsorption layer and its evolution with temperature was proposed.     

Esca investigations of some NiO/SiO2 and NiO—Al2 O3 /SiO2 catalysts

The ESCA spectra of a series of NiO/SiO₂ and NiO—Al₂ O₃/SiO₂ catalysts are reported, together with those of some reference compounds. The positions and shapes of the lines, in conjunction with a quantitative surface analysis from relative intensities, allow the identification of different surface phases, e.g. an NiO-like phase in the impregnated catalysts with very low catalytic activity and an Ni talc-like phase in the precipitated catalysts which have higher activity. The addition of Al₂O₃ has a great influence on the surface structure (formation of alumosilicate).