非晶铟锌氧化物薄膜晶体管的低频噪声特性与分析

本文针对底栅结构非晶铟锌氧化物薄膜晶体管的低频噪声特性开展实验与理论研究.由实验结果可知:受铟锌氧化物与二氧化硅界面处缺陷态俘获与释放载流子效应的影响,器件沟道电流噪声功率谱密度随频率的变化遵循1/fγ(γ≈0.75)的变化规律;此外,器件沟道电流归一化噪声功率谱密度随沟道长度与沟道宽度的增加而减小,证明器件低频噪声来源于沟道的闪烁噪声,可忽略源漏结接触及寄生电阻对器件低频噪声的影响.最后,基于载流子数涨落及迁移率涨落模型,提取γ因子与平均Hooge因子,为评价材料及器件特性奠定基础.     

铟锌氧化物薄膜晶体管局域态分布的提取方法

本文针对铟锌氧化物薄膜晶体管(IZO TFT)的低频噪声特性与变频电容-电压特性展开试验研究,基于上述特性对有源层内局域态密度及其在禁带中的分布进行参数提取.首先,基于IZO TFT的亚阈区I-V特性提取器件表面势随栅源电压的变化关系.基于载流子数随机涨落模型,在考虑有源层内缺陷态俘获/释放载流子效应基础上,通过γ因子提取深能态陷阱的特征温度;基于沟道电流噪声功率谱密度及平带电压噪声功率谱密度的测量,提取IZO TFT有源层内局域态密度及其分布.试验结果表明,带尾态缺陷在禁带内随能量呈e指数变化趋势,其导带底密度N1TA约为3.42×10~(20)cm~(-3)·eV-,特征温度TTA约为135 K.随后,将C-V特性与线性区I-V特性相结合,对栅端寄生电阻、漏端寄生电阻、源端寄生电阻进行提取与分离.在考虑有源层内局域态所俘获电荷与自由载流子的情况下,基于变频C-V特性对IZO TFT有源层内局域态分布进行参数提取.试验结果表明,深能态与带尾态在禁带内随能量均呈e指数变化趋势,深能态在导带底密度NDA约为5.4×10~(15)cm~(-3)·eV~(-1),特征温度TDA约为711 K,而带尾态在导带底密度NTA约为1.99×10~(20)cm~(-3)·eV~(-1),特征温度TTA约为183 K.最后,对以上两种局域态提取方法进行对比与分析.     

部分耗尽结构绝缘体上硅器件的低频噪声特性

针对部分耗尽结构绝缘体上硅(silicon-on-insulator, SOI)器件低频噪声特性展开实验与理论研究. 实验结果表明, 器件低频噪声主要来源于SiO₂-Si界面附近缺陷态对载流子的俘获与释放过程; 基于此理论可提取前栅和背栅氧化层界面附近缺陷态密度分别为8×10¹⁷ eV^-1·cm^-3和2.76×10¹⁷ eV^-1·cm^-3. 基于电荷隧穿机理, 在考虑隧穿削弱因子、隧穿距离与时间常数之间关系的基础上, 提取了前、背栅氧化层内缺陷态密度随空间的分布情况. 此外, SOI器件沟道电流归一化噪声功率谱密度随沟道长度的增加而线性减小, 这表明器件低频噪声主要来源于沟道的闪烁噪声. 最后, 基于电荷耦合效应, 分析了背栅电压对前栅阈值电压、沟道电流以及沟道电流噪声功率谱密度的影响.     

非晶硅薄膜晶体管沟道中阈值电压及温度的分布

基于氢化非晶硅薄膜晶体管(a-Si:H TFT)沟道中陷阱态的双指数分布, 区分了带尾陷阱态和深能级陷阱态的特征温度.利用源端、漏端串联电阻及沟道电阻, 将源端和漏端特征长度与有源层接触长度、SiO₂/氢化非晶硅 (a-Si:H)界面陷阱态及a-Si:H薄膜内陷阱态联系起来. 由串联电阻上电流密度相等解出沟道势. 通过泊松方程和高斯定理 得出a-Si:H TFT沟道各点的阈值电压表达式, 结果表明 沟道中某一点的阈值电压随着该点与源端距离的增大而减小. 在此基础上, 研究了自加热效应引起沟道各点温度的变化, 结果显示a-Si:H TFT在自加热效应下, 从源端到漏端各点温度变化先增大后减小, 沟道中心的温度变化最大.     

PECVD分层结构对提高氢化非晶硅TFT迁移率的影响

为了进一步提高氢化非晶硅薄膜晶体管 (a-Si:H TFT) 的场效应电子迁移率, 研究了批量生产条件下对欧姆接触层和栅极绝缘层进行多层 制备, 不同的工艺参数对a-Si:H TFT场效应电子迁移率的影响. 研究表明随着对欧姆接触层 (n⁺层) 分层数的增加, 以及低速生长的栅极绝缘层 (GL层) 和高速生长的栅极绝缘层 (GH 层) 厚度比值提高, a-Si:H TFT的场效应迁移率得到提升. 当n⁺层分层数达到 3层, GL层和GH层厚度比值为4:11 时, 器件的场效应电子迁移率达到0.66 cm²/V·s, 比传统工艺提高了约一倍, 显著改善了a-Si:H TFT 的电学特性, 并在量产线上得到了验证. 关键词： 非晶硅薄膜晶体管 电子迁移率 欧姆接触层 栅极绝缘层     

基于表面势的氢化非晶硅薄膜晶体管直流特性研究

基于表面势模型,在同时考虑深能态和带尾态分布下,采用简化的费米-狄拉克函数计算得到统一的定域态模型,并利用有效特征温度的概念,推导出a-Si:H TFT统一的电流-电压(I-V)模型.该模型可不分区地描述包括亚阈值区、线性区以及饱和区等a-Si:H TFT的所有工作区域.与实验得到的I-V特性进行比较表明,本模型能够准确地描述a-Si:H TFT的各个工作区的电流电压特性.     

宽范围偏置电流下的GaAlAs红外发光二极管1/f噪声特性

在宽范围偏置条件下,测量了GaAlAs红外发光二极管(IRLED)的低频噪声,发现1/f噪声幅值与偏置电流的γ次方成正比,在小电流区,γ≈1,在大电流区γ≈2.基于载流子数涨落和迁移率涨落机制建立了一个GaAlAs IRLED 1/f噪声模型,该模型的分析表明,低电流区GaAlAs IRLED的1/f噪声源于体陷阱对载流子俘获和发射导致的扩散电流涨落,高电流区的1/f噪声源于结空间电荷区附近氧化层陷阱对该处表面势的调制而引起载流子表面复合速率的涨落.该研究结果为1/f噪声表征GaAlAs IRLED的可靠性提供了实验基础与理论依据.     

发光二极管可靠性的噪声表征

通过对发光二极管内部结构的研究，发现N_t(界面态陷阱密度)和扩散电流比率 是影响发光二极管性能的重要因素，并与器件可靠性有密切关系.器件内部存在的多种噪声 中，低频1/f噪声可表征N_t和扩散电流比率.在深入研究发光二极管工作原理及1 /f噪声载流子数涨落理论和迁移率涨落理论的基础上，建立了发光二极管的电性能模型及1/ f噪声模型.在输入电流宽范围变化的条件下测量了器件的电学噪声，实验结果与理论模型符 合良好.通过对其测量结果分析，深入研究了噪声和发光二极管性能与可靠性的关系，证明 了噪声幅值越大，电流指数越接近于2，器件可靠性越差，失效率则显著增大. 关键词： 1/f噪声 发光二极管 陷阱 光功率     

60Coγ射线辐照对肖特基二极管1/f噪声的影响

在肖特基二极管(schottky barrier diode,SBD)辐照损伤机理和总剂量效应分析的基础上,利用1/f噪声的迁移率涨落和载流子数涨落模型,深入研究辐照损伤对器件1/f噪声的影响.研究结果表明,辐照诱生新的界面态,改变界面态密度分布,进而调制了肖特基势垒高度,增大表面复合速度是引起器件性能退化主要原因,也是1/f噪声剧烈增加的主要原因.正因为如此,噪声与器件退化存在相关性,即噪声拟合参数B越大,偏离标准值越多,器件可靠性越差,抗辐照能力越低,在辐照环境下工作越容易失效.由此可知,1/f噪声特性可以用作SBD辐照损伤机理的研究工具,并有可能用于SBD抗辐射加固的无损评估.     

室温下溅射法制备高迁移率氧化锌薄膜晶体管

为降低氧化锌薄膜晶体管(ZnO TFT)的工作电压,提高迁移率,采用磁控溅射法在氧化铟锡(ITO)导电玻璃基底上室温下依次沉积NbLaO栅介质层和ZnO半导体有源层,制备出ZnO TFT,对器件的电特性进行了表征。该ZnO TFT呈现出优异的器件性能:当栅电压为5 V、漏源电压为10 V时,器件的饱和漏电流高达2.2 m A;有效场效应饱和迁移率高达107 cm~2/(V·s),是目前所报道的室温下溅射法制备ZnO TFT的最高值,亚阈值摆幅为0.28 V/decade,开关电流比大于107。利用原子力显微镜(AFM)对NbLaO和ZnO薄膜的表面形貌进行了分析,分析了器件的低频噪声特性,对器件呈现高迁移率、低亚阈值摆幅以及迟滞现象的机理进行了讨论。     

1/f-type fluctuation of electron transmission in one-dimensional disordered systems

A universal feature of 1/f-type fluctuation is numerically observed in the system-size n dependence of the transmission amplitude t_n in various one-dimensional disordered systems. The power spectrum P(f) of the transmission coefficient T(n)=|t_n|² exhibits the power law of 1/f², irrespective to the type of disorder of the system whether it is of short-range or of long-range correlation. That of the phase θ_t(n) of t_n also does the universal power law of 1/f^1.4.     

Driven injection of a polymer into a spherical cavity: A Langevin dynamics simulation study

The injection of a self-avoiding flexible polymer into a spherical cavity under a driving force is studied by using Langevin dynamics simulation. For given polymer length (N) and driving force (f), the polymer can be completely injected into the cavity only when the radius of the cavity is larger than a transition radius (R_eC). The dependence of R_eC on N and f can be described by a scaling relation R_eC∝N^1/3f^-δ. The value of δ changes from 4/15 in the small f region to 1/6 in the moderate f region due to the screening of the excluded-volume interaction between monomers. We find the complete injection time (τ) decreases monotonously with increasing the cavity radius or decreasing the polymer length. The simulation results are in good agreement with the theoretical predictions from the free energy analysis and a simple kinetic model.     

1-forms over the moduli space of irreducible connections defined by the spectrum of Dirac operators

Let (P) be the moduli space of irreducible connections of a G-principal bundle P over a closed Riemannian spin manifold M. Let D_A be the Dirac operator of M coupled to a connection A of P and f a smooth function on M. We consider a smooth variation A(u) of A with tangent vector ω and denote T_ω:= (D_A(u)−f) (u=0. The coefficients of the asymptotic expansion of trace (T_ω · e^-t(D_A−f)2) near t=0 define 1-forms a^(k)_f, K=0, 1, 2, … on (P). In this paper we calculate aa⁽⁰⁾_f, a⁽¹⁾_f, a⁽²⁾_f and study some of their properties. For instance using the 1-form a⁽²⁾_f for suitable functions f we obtain a foliation of codimension 5 of the space of G-instantons of S⁴.     

NFX(X=-1,0,+1)分子离子基态的结构与势能函数

用密度泛函理论的B3LYP方法,分别以6-311++g(df,3pd),6-311g(3d,3p)和6-311++g(3df,3pd)为基函数对NF分子、NF⁺和NF^-离子基态进行几何优化和频率计算,并进行单点能扫描计算.用最小二乘法拟合得到NF^X(X=-1,0,+1)分子离子基态的Murrell-Sorbie势能函数.利用得到的解析势能函数计算出的NF分子和NF⁺离子基态光谱常数(B_e,α_e,ω_e,ω_eχ_e)与实验值符合很好.首次得到NF^-离子基态的光谱常数(B_e,α_e,ω_e,ω_eχ_e)和力常数(f₂,f₃,f₄),为NF-离子基态的后期研究提供理论参考.     

Field-induced parameters of re-entrant magnets and concentrated spin glasses

We have used electron spin resonance measurements to derive the temperature and frequency dependences of the field-induced magnetization [M(T, f)] and anisotropy field [H_an (T)] in a number of amorphous alloys belonging to the series (Fe_pNi_1−p)₇₅P₁₆B₆Al₃. In re-entrant (p > p_c, the critical concentration for ferromagnetism) alloys at hi gh frequencies (f = 35 GHz, field ≈ 12 kOe) M reduces as T^3/2 at high T and as T below ≈ 40 K, the deviation from T^3/2 becoming more marked as p → p⁺_c. For p close to p_c, lowering the frequency first causes the T term to increase and ultimately ( ≈ 4 GHz) changes the variation of M with T to that discovered previously for concentrated spin glasses, namely M is constant at low T and drops linearly at high temperatures. For the re-entrants, the results are interpreted on the basis of a model which invokes an energy gap in the spin-wave spectrum, introduces a non-zero density of states of the gap energy and takes into consideration a low-q cut-off in the spin-wave integral in thelow-T (T) regime.In the concentrated spin glasses [M (0) - M (T)]/ M (0) is well represented by the function [exp (Δ / T) - 1]^-1, where Δ has values close to the corresponding Curie-Weiss temperatures θ_p but much larger than the respective spin glass transition temperatures T_SG. The temperature dependence of H_an is largely given by the function (1 - T/T^*), where T^* is equal to the zero-field freezing temperature for the re-entrants and T_SG for the spin glasses, respectively.     

Superconductivity of compressed platinum powder at very low temperatures

Superconductivity of compressed, high-purity platinum powder (average grain size 2–3 μm) was found by measurements of resistivity, AC susceptibility and magnetization. The transition temperature into the superconducting state T_c and the critical magnetic field B_c strongly depend on the packing fraction f of the samples: we found 0.62T_c(0)1.38 mK and 6.6B_c(0)67 μT for 0.8f0.5, respectively. The temperature dependence of the critical magnetic fields can be described by B_c(T)=B_c(0)(1−(T/T_c)²). The discussion of these results includes possible explanations for the origin of superconductivity in this new superconducting material.     

一端附壁高分子链的Monte Carlo研究

采用简立方格点上的Monte Carlo模拟,研究一端被无限大不可穿透平面壁吸附的高分子链的均方末端距<R²>,以及高分子链的质量中心到平面吸附壁的平均距离<Z>,与链长N、参数u(u=e^-ε/kT,ε是链骨架原子间的相互作用能量,k是玻耳兹曼常数,T是热力学温度)的关系。结果表明:<R²>和<Z>都服从标度律,<R²>=αN^γ,<Z>=βN^η,其中,γ、η、α、β都是u的函数;u从1减小到0.5,则γ从1.01增大到1.19,η从0.51增大到0.60.     

二维圆盘颗粒体系声学行为的数值研究

数值测量了卸载过程中二维单分散圆盘颗粒系统的横波、纵波声速、声衰减系数、非线性系数随压强的变化以及声衰减系数随频率的变化.结果表明,二维(2D)圆盘颗粒体系的横波、纵波声速均随压强呈分段幂律标度:当压强P10~(-4)时,横波、纵波声速随压强的增大而减小;当P10~(-4)时,有v_t~P~(0.202),v_l~P~(0.338).进一步得到其剪切模量和体积模量的比值G/B也随压强呈幂律标度,G/B~P~(-0.502),暗示在低压强下,与三维(3D)球形颗粒体系类似,2D圆盘颗粒体系也处于L玻璃态.水平激励和垂直激励下2D圆盘颗粒系统的衰减系数随频率变化也呈现分段行为:当频率f0.05时,衰减系数不随f变化;当f0.05时,横波纵波的衰减系数α~f;当f0.35时,横波衰减系数α_T~f~2,纵波衰减系数α_L~f~(1.5).此外,竖直水平激励下的2D圆盘颗粒系统的非线性系数和衰减系数随压强也呈现与声速类似的分段规律:当P10~(-4)时,横波非线性系数β_T~P~(-0.230),其余都不随压强变化.当P10~(-4)时,两者均随压强增大呈幂律减小:β_T~P~(-0.703),β_L~P~(-0.684),α_T~P~(-0.099),α_L~P~(-0.105).进而得到2D圆盘颗粒系统中散射相关的特征长度?~*随压强呈幂律标度,当P10~(-4)时,?~*~P~(-0.595);当P10~(-4)时,?~*~P~(0.236).     

Swampland dS conjecture in mimetic f(R,T) gravity

In this paper, we study a theory of gravity called mimetic f(R, T) in the presence of swampland dS conjecture. For this purpose, we introduce several inflation solutions of the Hubble parameter H(N) from f(R, T) = R + δT gravity model, in which R is Ricci scalar, and T denotes the trace of the energy–momentum tensor. Also, δ and N are the free parameter and a number of e-fold, respectively. Then we calculate quantities such as potential, Lagrange multiplier, slow-roll, and some cosmological parameters such as n_s and r. Then we challenge the mentioned inflationary model from the swampland dS conjecture. We discuss the stability of the model and investigate the compatibility or incompatibility of this inflationary scenario with the latest Planck observable data.