基于多铁逻辑的铁磁耦合互连线磁化动态模拟

建立了多铁纳磁体逻辑器件的铁磁耦合作用模型,通过施加应变时钟对铁磁耦合互连线的磁化动态进行了理论模拟.结果表明:合适的应力(19.7—20.1 MPa)能够实现近180?磁化翻转,完成逻辑态在铁磁耦合互连线中的正确传递;多铁纳磁体间的强耦合阻碍器件的有效磁化翻转,这可能源于小间距增强了纳磁体的面外磁化,从而阻碍了面内翻转.研究结论可为多铁逻辑电路的设计提供重要指导.     

基于倾斜纳磁体翻转倾向性的与(或)逻辑门应力模型

纳米磁性逻辑器件具有高抗辐射性、低功率、天然非易失性等优势,应用前景广阔.倾斜放置的纳磁体具有翻转倾向性,在控制时钟撤去后倾斜纳磁体倾向于翻转至长轴的一端.利用倾斜纳磁体的翻转倾向性,提出了一种应力调控的与(或)磁逻辑门,并建立了其动态磁化的数学模型.使用微磁学方法对逻辑门进行了仿真,结果验证了预期逻辑门功能.与现有的逻辑门相比,基于倾斜纳磁体的与(或)门结构具有能耗更低、可靠性更高和制造工艺更简单等优点.     

磁性量子元胞自动机逻辑电路的转换特性研究

本文研究了磁性量子元胞自动机反相器和择多逻辑门等基本逻辑电路在不同纳磁体厚度和间距下的转换特性.采用单畴近似LLG方程对纳磁体以及电路进行了建模和仿真,结果表明更厚的纳磁体需要更大的转换磁脉冲,大厚度纳磁体逻辑电路表现出较慢的转换;相同厚度和间距下,择多逻辑门比反相器的转换时间略长.此外,模拟结果还表明纳磁体间距对反相器的转换过程影响明显,而对择多逻辑门则影响较小. 关键词： 磁性量子元胞自动机 转换特性 厚度和间距 逻辑电路     

基于交换作用的纳磁逻辑电路片上时钟结构研究

纳磁逻辑电路具有低功耗、非易失和可常温下制备等优点, 实现低功耗片上时钟是其集成化的必备条件. 本文提出了一种基于交换作用的纳磁逻辑电路片上时钟结构, 用载流铜导线产生的奥斯特场将铁磁体薄膜覆层进行磁化, 然后依靠铁磁体层与纳磁体界面存在的交换作用场使后者磁化方向发生翻转. 与轭式铁磁体时钟用外磁场控制纳磁体磁化方向相比, 该方案在功耗方面降低了5/6, 时钟边界杂散场强度降低了2/3, 达到降低功耗、减轻串扰的目的. 此外, 采用微磁仿真进一步验证了该时钟结构上的纳磁体逻辑阵列可以实现逻辑功能. 关键词： 纳磁逻辑 片上时钟 交换作用     

非对称条形纳磁体的铁磁共振频率和自旋波模式

通过建立微波激励下的非对称条形多铁纳磁体的微磁模型,研究了倾斜角和缺陷角对该形纳磁体的铁磁共振谱和自旋波模式的影响.通过对微磁仿真得到的动态磁化数据进行分析发现,非对称条形纳磁体倾斜角度增加,铁磁共振频率随之增加,而这一现象与纳磁体的缺陷角度无关.倾斜角不变,非对称条形纳磁体的铁磁共振频率与缺陷角度呈单调递增关系,并且不同缺陷角度纳磁体的自旋波模式显示出极大的差异.非对称条形纳磁体与矩形纳磁体相比,它的自旋波模式局部化,具体为非对称条形纳磁体的自旋波模式不对称且高进动区域存在于边缘,表现为非对称边缘模式.倾斜角改变导致纳磁体内部退磁场变化,引起纳磁体边缘模式的移动,而中心模式对倾斜角的变化并不敏感.最后,对建立的模型在高频微波磁场激励下的磁损耗进行了分析,验证了模型的可靠性.这些结论说明缺陷角和倾斜角可用于纳磁体自旋波模式和铁磁共振频率的调谐,所得结果为可调纳磁微波器件的设计提供了重要的理论依据和思路.     

YBCO带材有限元细化模型电磁应力研究

将高场磁体的有限元平均模型和YBCO带材的细尺度网格模型相结合,在不同区域采用不同模型的多尺度建模方法,解决了YBCO带材多尺度网格剖分问题,具有结构简单和计算精度高的优点。从应力载荷出发,依次分析了轴对称模型在自场和背场电磁载荷下的每层应力应变的分布特点,得到了YBCO层状结构中不同材料的最弱应力应变分布位置。仿真结果为自场条件下的应力和应变最大位置处均在哈氏合金层。在背场条件下,3层带材受力最大位置在YBCO带材超导层和缓冲层,而6层细化模型最易在银层发生破坏。     

1.5T关节超导核磁共振成像主磁体电磁机械特性分析

本文设计了用于关节成像的1.5T超导核磁共振成像(MRI)主磁体的电磁结构与机械支撑结构.首先计算了主磁体成像区域及磁体周围的电磁场分布.在此基础上,采用电磁-结构耦合方法计算了主磁体与支撑结构中的应力、应变分布情况.同时分析了不同的支撑材料对磁体应力/应变的影响.给出了1.5T超导MRI主磁体支撑结构的设计标准.     

一种新的超导储能磁体结构优化方法北大核心CSCD

高温超导线材的各向异性一直影响其在工程中的使用性能,临界电流主要受磁体最大垂直磁场(垂直于带材表面)决定,最大应力通常出现在最大轴向磁场(平行于带材表面)处.文章针对单螺线管超导储能磁体,从增大临界电流和减小机械应力两方面出发,提出一种新的超导储能磁体结构优化方法.利用MATLAB从不同径高比(平均半径/高)着手,计算带材总长度为2000m的多组磁体结构参数,建立了单螺线管超导磁体的有限元模型,结合COMSOL仿真软件获得多组结构参数的应力、磁场分布以及磁场最大值,将承受最大应力区域的磁体转移至磁体两端中部区域.对参与转移的磁体参数进行计算,分析对比不同转移参数对磁体应力和临界电流的影响.仿真结果表明,对比常规磁体,优化后的磁体能有效减小最大垂直磁场从而增大临界电流,减小最大轴向磁场从而减小最大应力,对超导储能磁体的优化具有重要意义.     

一种新的超导储能磁体结构优化方法

高温超导线材的各向异性一直影响其在工程中的使用性能,临界电流主要受磁体最大垂直磁场(垂直于带材表面)决定,最大应力通常出现在最大轴向磁场(平行于带材表面)处.文章针对单螺线管超导储能磁体,从增大临界电流和减小机械应力两方面出发,提出一种新的超导储能磁体结构优化方法.利用MATLAB从不同径高比(平均半径/高)着手,计算带材总长度为2000m的多组磁体结构参数,建立了单螺线管超导磁体的有限元模型,结合COMSOL仿真软件获得多组结构参数的应力、磁场分布以及磁场最大值,将承受最大应力区域的磁体转移至磁体两端中部区域.对参与转移的磁体参数进行计算,分析对比不同转移参数对磁体应力和临界电流的影响.仿真结果表明,对比常规磁体,优化后的磁体能有效减小最大垂直磁场从而增大临界电流,减小最大轴向磁场从而减小最大应力,对超导储能磁体的优化具有重要意义.     

轴流式水轮机转轮流固耦合计算

在利用轴流式水轮机全流道三维非定常湍流数值计算和利用弹性力学非稳态有限元法计算轴流式水轮机转轮叶片动态的应力和应变的基础上,利用弱耦合算法完成了轴流式水轮机在有粘有旋条件下的流固耦合计算,得到了叶片的动态应力和动态应变,并对结果进行了讨论.     

Nanomagnet logic: progress toward system-level integration

Quoting the International Technology Roadmap for Semiconductors (ITRS) 2009 Emerging Research Devices section, 'Nanomagnetic logic (NML) has potential advantages relative to CMOS of being non-volatile, dense, low-power, and radiation-hard. Such magnetic elements are compatible with MRAM technology, which can provide input–output interfaces. Compatibility with MRAM also promises a natural integration of memory and logic. Nanomagnetic logic also appears to be scalable to the ultimate limit of using individual atomic spins.' This article reviews progress toward complete and reliable NML systems. More specifically, we (i) review experimental progress toward fundamental characteristics a device must possess if it is to be used in a digital system, (ii) consider how the NML design space may impact the system-level energy (especially when considering the clock needed to drive a computation), (iii) explain--using both the NML design space and a discussion of clocking as context—how reliable circuit operation may be achieved, (iv) highlight experimental efforts regarding CMOS friendly clock structures for NML systems, (v) explain how electrical I/O could be achieved, and (vi) conclude with a brief discussion of suitable architectures for this technology. Throughout the article, we attempt to identify important areas for future work.     

石墨烯沟道全自旋逻辑器件开关特性

由于石墨烯的电导率相比典型的金属材料更大,自旋弛豫时间更长,自旋轨道相互作用更弱,从而在相同的注入电流情况下,自旋电流在石墨烯材料中的耗散作用更弱.基于自旋传输和磁化动力学耦合模型,研究了石墨烯沟道全自旋逻辑器件的开关特性.结果显示,在相同的电源电压下和器件尺寸下,石墨烯沟道材料的全自旋逻辑器件磁矩翻转时间比Cu沟道更短,流入输出纳磁体的自旋电流更大.同时,长度越短、宽度越窄的沟道其开关时间更短,功耗更小.在满足磁体磁矩翻转的临界开关电流的情况下,石墨烯沟道的可靠工作长度也显著大于Cu沟道.所以石墨烯材料是相比于金属材料更理想的沟道材料.另外,通过合理选择沟道尺寸,能进一步降低器件开关时间和功耗.上述结论为全自旋逻辑器件的优化设计与应用提供了理论参考.     

Exploring the thermodynamic limits of computation in integrated systems: magnetic memory, nanomagnetic logic, and the Landauer limit

Nanomagnetic memory and logic circuits are attractive integrated platforms for studying the fundamental thermodynamic limits of computation. Using the stochastic Landau-Lifshitz-Gilbert equation, we show by direct calculation that the amount of energy dissipated during nanomagnet erasure approaches Landauer's thermodynamic limit of kTln(2) with high precision when the external magnetic fields are applied slowly. In addition, we find that nanomagnet systems behave according to generalized formulations of Landauer's principle that hold for small systems and generic logic operations. In all cases, the results are independent of the anisotropy energy of the nanomagnet. Lastly, we apply our computational approach to a nanomagnet majority logic gate, where we find that dissipationless, reversible computation can be achieved when the magnetic fields are applied in the appropriate order.     

Modular Adder Designs Using Optimal Reversible and Fault Tolerant Gates in Field-Coupled QCA Nanocomputing

The challenges which the CMOS technology is facing toward the end of the technology roadmap calls for an investigation of various logical and technological solutions to CMOS at the nano scale. Two such paradigms which are considered in this paper are the reversible logic and the quantum-dot cellular automata (QCA) nanotechnology. Firstly, a new 3 × 3 reversible and universal gate, RG-QCA, is proposed and implemented in QCA technology using conventional 3-input majority voter based logic. Further the gate is optimized by using explicit interaction of cells and this optimized gate is then used to design an optimized modular full adder in QCA. Another configuration of RG-QCA gate, CRG-QCA, is then proposed which is a 4 × 4 gate and includes the fault tolerant characteristics and parity preserving nature. The proposed CRG-QCA gate is then tested to design a fault tolerant full adder circuit. Extensive comparisons of gate and adder circuits are drawn with the existing literature and it is envisaged that our proposed designs perform better and are cost efficient in QCA technology.     

一种数据非易失性、多功能和可编程的自旋逻辑研究进展

自旋(磁)逻辑器件具有数据非易失性、CMOS电路兼容性、操作速度快等优点,是开发计算存储相融合的非冯·诺依曼计算机架构的理想候选方案之一.本文进一步演示基于自旋霍尔效应的自旋逻辑方案.利用自旋霍尔效应不仅能够实现基本的布尔逻辑功能和数据存储功能,还可以利用自旋轨道力矩磁矩翻转的对称性要求、偏置磁场要求等,进一步实现自旋逻辑器件的可编程和多功能特性.利用这些特点,同一自旋霍尔逻辑器件可以实现"与"、"或"、"非"、"与非"、"或非"等功能.因为这些特性,基于自旋霍尔效应的自旋逻辑单元有望成为后续自旋逻辑器件和电路的核心器件,推动后者的持续开发与广泛应用.     

Gate-Voltage-Induced Magnetization Reversal and Tunneling Anisotropic Magnetoresistance in a Single Molecular Magnet with Temperature Gradient

We study the control of gate voltage over the magnetization of a single-molecule magnet(SMM) weakly coupled to a ferromagnetic and a normal metal electrode in the presence of the temperature gradient between two electrodes.It is demonstrated that the SMM's magnetization can change periodically with periodic gate voltage due to the driving of the temperature gradient.Under an appropriate matching of the electrode polarization,the temperature difference and the pulse width of gate voltage,the SMM's magnetization can be completely reversed in a period of gate voltage.The corresponding flipping time can be controlled by the system parameters.In addition,we also investigate the tunneling anisotropic magnetoresistance(TAMR) of the device in the steady state when the ferromagnetic electrode is noncollinear with the easy axis of the SMM,and show the jump characteristic of the TAMR.     

Investigation of shape-dependent switching of coupled nanomagnets

This paper presents a magnetic force microscopy study of antiferromagnetic ordering along chains of dipole-coupled single-domain permalloy nanomagnets with a variety of shapes. Magnetization reversal processes occur due to antiferromagnetic coupling between the closely spaced dots when an appropriate external magnetic field is applied. The goal of this study was to investigate the switching properties and correlation lengths as a function of nanomagnet geometry. We have found that certain shapes (due to their stronger stray fields) clearly show stronger interaction than others when the chain is demagnetized. In addition we have seen that the performance of the nanomagnets also depends on the method of demagnetization, and this fact must be taken into account when shape engineering is used to design coupled nanomagnet systems for a given application.     

Electronic transport in single-molecule magnets on metallic surfaces

An electron transport is studied in the system that consists of a scanning tunneling microscopy, single-molecule magnet metal. Because of quantum tunneling of magnetization in a single-molecule magnet, linear response conductance exhibits stepwise behavior with increasing longitudinal field, and each step is maximized at a certain value of field sweeping speed. The conductance at each step oscillates as a function of the additional transverse magnetic field along the hard axis. A rigorous theory is presented that combines the exchange model with the Landau-Zener model.