双层转角石墨烯结构的构建方法浅析

双层转角石墨烯是近几年凝聚态物理领域的前沿研究热点.本文阐述了基于晶体周期性和超胞-原胞变换矩阵构造石墨烯超胞结构的方法,并将其应用于双层转角石墨烯结构的构造,增进学生对晶体结构周期性这一特点的理解,掌握描述复杂晶体结构的数学方法,并了解相关前沿进展.     

双层转角石墨烯的结构和电学性质

石墨烯是第一个被发现的层状二维材料,它的电学性质对层数和层间的堆垛方式有很强的 依赖性。而层间的转角可以被看作是调控石墨烯电学性质的又一个可控的自由度。本文主要综述 双层转角石墨烯的基本结构与性质,重点讲述转角对双层石墨烯电学性质的影响。我们将从理论 与实验结合的角度出发,介绍双层转角石墨烯中Dirac 费米子的新奇物理特性,重点阐述如何通 过转角来调控石墨烯的电学性质。最后我们对双层转角石墨烯的研究现状进行总结和展望。     

石墨烯带隙的调控及其研究进展

石墨烯是一种单原子层的二维材料,因其独特的晶格结构而具备十分优越的性能,引起了 科学家的广泛关注。但因其价带与导带相交于狄拉克点,导致石墨烯为没有带隙的半金属,限 制了其在纳电子学器件中的应用。为了打开石墨烯的带隙,研究者们付出了巨大的努力。在石 墨烯中引入带隙的方法包括量子限制法、掺杂法和对称性破缺法,它们分别是将电子限制在一维 的石墨烯纳米带中、对石墨烯进行n-型或p-型掺杂以及在双层石墨烯的垂直方向施加外加电场 使双层石墨烯的对称性破缺。本文着重介绍石墨烯纳米带的合成法、石墨烯掺杂的种类和打破 双层石墨烯对称性的方法。     

转角双层石墨烯中的势杂质效应（英文）

近年来,平带在转角双层石墨烯（TBG）中的发现引起了越来越多的关注。在这项工作中,我们报告了我们对这个平带系统中杂质效应的研究,这对于真实材料来说是一个重要问题。通过采用Lanczos递归方法,我们求解了杂质附近的局域态密度（LDOS）。我们发现,对于大尺寸的杂质,一系列束缚态在杂质内部形成,LDOS中平带所对应的峰在杂质边界附近被压制,而在杂质内部由于杂质势的作用而发生平移。随着杂质尺寸变小,其对平带的影响变弱,这符合其大尺寸Wannier函数的预期。这个特性与通常具有小尺寸局域Wannier轨道的平带系统有所不同,表明TBG中的平带对小尺寸杂质更加稳定。     

双层石墨烯的化学气相沉积法制备及其光电器件

石墨烯是一种具有优异性质,在光电及能源领域具有巨大应用前景的二维材料.尽管单层石墨烯具有超高的迁移率,但是它的能带结构具有狄拉克锥(K点),即价带和导带并未有明显分离,所以在半导体器件方面的应用受到一定的限制.由双层石墨烯搭建而成的双门器件,在施加外加电场的情况下,它的带隙可以打开,并在一定范围内可调,这种性质赋予了双层石墨烯在半导体器件应用方面的前景.然而机械或者液相剥离石墨烯,在层数和大小方面可控性较差.如何通过化学气相沉积法可控制备双层石墨烯是目前研究的核心问题之一.本文主要综述了如何通过化学气相沉积法制备双层石墨烯和制备双层石墨烯器件的一系列工作,其中包括最新的研究进展,对生长机理的研究做了详细的介绍和讨论,并对该领域的发展进行了展望.     

垂直电场下扭转双层石墨烯光学吸收性质的理论研究

层间扭转角度是对石墨烯物理性质宽波段可调谐的一个新参量.本文采用2°<θ<15°扭转角度下的连续近似模型,获得了不同扭转角度双层石墨烯分别在有、无电场下的能带结构,通过电子-光子相互作用跃迁速率,计算模拟了范霍夫奇点附近电子带内跃迁和带间跃迁所引起的光学吸收谱.结果表明,在无外加电场时,带间跃迁吸收峰的位置随着扭转角度的增大而发生从红外到可见光波段的蓝移,且吸收系数增大,带内跃迁的光学吸收系数相对于带间跃迁高出2个数量级;而存在外加电场时,两个范霍夫奇点在波矢空间的位置发生偏移,带间跃迁吸收峰发生分裂,且两个分裂的吸收峰位置随着电场强度的不断增大而反向行进.上述研究结果对石墨烯材料在光电器件方面的应用有一定指导作用.     

金属催化制备石墨烯的研究进展

石墨烯作为一种新兴的碳素材料,从一出现就引起了众多学者的关注.石墨烯具有许多新奇的特性,使得石墨烯在光电领域及微电子工业等有极大的应用潜力.但是目前难以实现大尺寸、高质量、宏量石墨烯的可控制备,限制了石墨烯的广泛应用.本文分析了各种石墨烯制备方法的利弊,重点从层数控制及大面积制备等方面对金属催化法进行了阐述,固态碳源金属催化法可以实现宏量制备大尺寸、高质量、薄且均匀的石墨烯.综述了金属催化制备石墨烯的相关机理研究,指出了目前研究的局限,并对石墨烯相变机理的下一步研究方向进行了展望.     

石墨烯纳米结构的制备及带隙调控研究

石墨烯在未来微电子学领域有极大的应用前景,但是其零带隙的特点阻碍了石墨烯在半导体领域的应用.研究发现,打开室温下可用的石墨烯带隙所需要的石墨烯纳米结构尺度在10 nm以下,这一尺度的纳米结构一方面制备比较困难,另一方面器件可承载的驱动电流较小.因此,如何实现亚10 nm石墨烯纳米结构的有效加工以及如何在有效调控带隙的基础上增大石墨烯器件可承载的驱动电流,还需要进一步的研究.本文首先研究了利用聚甲基丙烯酸甲酯/铬(PMMA/Cr)双层结构工艺,通过刻蚀时间的控制,利用电子束曝光及刻蚀工艺实现了亚10 nm石墨烯纳米结构的可控制备.同时设计并制备了单排孔石墨烯条带结构,该结构打开的带隙远大于相同特征宽度石墨烯纳米带所能打开带隙的大小.该结构在有效打开石墨烯带隙的同时,增加了石墨烯纳米结构可以承载的驱动电流,有利于石墨烯在未来微电子领域的应用.     

用化学气相沉积法制备石墨烯薄膜及其电学性能研究

以甲烷作为反应气体、利用高温化学气相沉积法分别在纯硅片和镀镍镉过渡层硅片上沉积石墨烯薄膜,应用金相显微镜和电学特性测试分析了700,900,950℃温度下生长的石墨烯薄膜的表面形貌、伏安特性及其他电学特性.发现镍铬过渡层具有显著的催化作用,可有效降低石墨烯的生长温度.随着生长温度的升高,样品中电子迁移率随之增大,伏安特性的线性度也越好.对纯硅片上生长的石墨烯,发现高温有利于甲烷有效分解和成核,可有效提高表面电子浓度和电子迁移率,其迁移率可达到2.52×104 cm2/V.     

双层锰氧化物薄膜的制备及其物理性质

用脉冲激光沉积(PLD)方法成功地制备了双层钙钛矿结构的La2-2xSr1+2xMn2O7(x=032)单相薄膜.这种薄膜生长在具有不同晶格参数的两种衬底上.测量发现，两种衬底上生长的La2-2xSr1+2xMn2O7(x=032)薄膜具有迥然不同的金属-绝缘体转变温度TM-I及其他物性.界面应力的研究表明这是衬底晶格常数不同引起膜内应变的结果.在衬底的压应力下，薄膜的电阻-温度曲线的峰值(TM-I)向高温移动且电阻率(ρ)下降；相反，对于衬底张应力下的薄膜，TM-I下降ρ上升.这些结果可以用双交换模型做很好的解释. 关键词： CMR 双层锰氧化物薄膜 PLD 应力     

Probing interlayer coupling in twisted single‐crystal bilayer graphene by Raman spectroscopy

Twisted bilayer graphene, in which interlayer interaction plays a critical role in this coupled system, is characterized for its angle‐dependent electronic and optical properties. Here, we present a systematic Raman study of single‐crystal twisted bilayer graphene grains, with the spectra of each bilayer graphene precisely correlated to its twist angle using combined transmission electron microscopic technique. Van Hove singularities develop as a result of band rehybridization at the crossing Dirac cones of the two layers, giving rise to a critical twist angle that determines the energy separation between the saddle points in the band structure and the resonance Raman spectra accordingly. The 2D mode becomes sensitive to the twist angle, showing the angle‐dependent position, peak width, and intensity. Our results interpreted in the framework of angle‐dependent double resonance scattering provide an important experimental perspective in understanding the coupled bilayer graphene system. Copyright © 2014 John Wiley & Sons, Ltd.     

旋转双层石墨烯的电子结构

本文将第一性原理和紧束缚方法结合起来, 研究了层间不同旋转角度对双层石墨烯的电子能带结构和态密度的影响. 分析发现, 旋转双层石墨烯具有线性的电子能量色散关系, 但其费米速度随着旋转角度的减小而降低. 进一步研究其电子能带结构发现, 不同旋转角度的双层石墨烯在M点可能会出现大小不同的的带隙, 而这些能隙会增强双层石墨烯的拉曼模强度, 并由拉曼光谱实验所证实. 通过对比双层石墨烯的晶体结构和电子态密度, 发现M点处带隙来自于晶体结构中的“类AB堆垛区”. 关键词： 旋转双层石墨烯 第一性原理 紧束缚 电子结构     

Theoretical study of broadband near-field optical spectrum of twisted bilayer graphene

We theoretically study the broadband near-field optical spectrum of twisted bilayer graphene (TBG) at various twist angles near the magic angle using two different models. The spectrum at low Fermi energy is characterized by a series of peaks that are almost at the same energies as the peaks in the far-field optical conductivity of TBG. When the Fermi energy is near a van Hove singularity, an additional strong peak appears at finite energy in the near-field spectrum, which has no counterpart in the optical conductivity. Based on a detailed calculation of the plasmon dispersion, we show that these spectroscopic features are associated with interband and intraband plasmons, which can provide critical information about the local band structure and plasmonic excitations in TBG. The near-field peaks evolve systematically with the twist angle, so they can serve as fingerprints for identifying the spatial dependent twist angle in TBG samples. Our findings pave the way for future experimental studies of the novel optical properties of TBG in the nanoscale.     

Observation of quadratic magnetoresistance in twisted double bilayer graphene

Magnetoresistance ({MR}) provides rich information about Fermi surface, carrier scatterings, and exotic phases for a given electronic system. Here, we report a study of the magnetoresistance for the metallic states in twisted double bilayer graphene (TDBG). We observe quadratic magnetoresistance in both Moiré valence band (VB) and Moiré conduction band (CB). The scaling analysis shows validity of Kohler's rule in the Moiré valence band. On the other hand, the quadratic magnetoresistance appears near the halo structure in the Moiré conduction band, and it violates Kohler's rule, demonstrating the {MR} scaling related to band structure in TDBG. We also propose an alternative scaling near the halo structure. Further analysis implies that the observed quadratic magnetoresistance and alternative scaling in conduction band are related to the halo boundary. Our results may inspire investigation on {MR} in twisted 2D materials and provide new knowledge for {MR} study in condensed matter physics.     

Interlayer vibration of twisted bilayer graphene: A first-principles study

Multi-layered structures of graphene and other two dimensional materials are novel organizations with fascinating properties. In this work, we investigate the interlayer lattice dynamics of the Moiré superlattice of twisted bilayer graphene (tBLG) using first-principles calculations. Due to the structural complexity, we calculate the frequencies of the interlayer breathing and shear vibrational modes of the tBLG without exploring all the degree of freedoms of the tBLG. Our calculation shows that the frequencies of breathing and shear modes display pronounced dependence on twisting angle, and compare well with the state of arts experimental measurements. We hint that the strategy employed here paves a route to the study of the interlayer vibrational properties of double layered two dimensional systems.     

Projective representation of D_6 group in twisted bilayer graphene

Within the framework of continuum model, we study the projective representation of emergent D_6 point group in twisted bilayer graphene. We then construct tight-binding models of the lowest bands without and with external electromagnetic fields, based on the projective representation.     

石墨烯的结构、性能及潜在应用

石墨烯是一种二维零带隙半金属材料,近年来受到学术界和工业界的广泛关注。文章将石墨烯合成方法分为固、液、气三类并分别加以讨论,介绍了石墨烯的结构和缺陷特征及其电、光、热、力学等性能。石墨烯的应用研究主要集中在电学、力学、选择性分离膜、基底和生长衬底等方面。     

A comparison of the transport properties of bilayer graphene,monolayer graphene,and two-dimensional electron gas

We studied and compared the transport properties of charge carriers in bilayer graphene, monolayer graphene, and the conventional semiconductors (the two-dimensional electron gas (2DEG)). It is elucidated that the normal incidence transmission in the bilayer graphene is identical to that in the 2DEG but totally different from that in the monolayer graphene. However, resonant peaks appear in the non-normal incidence transmission profile for a high barrier in the bilayer graphene, which do not occur in the 2DEG. Furthermore, there are tunneling and forbidden regions in the transmission spectrum for each material, and the division of the two regions has been given in the work. The tunneling region covers a wide range of the incident energy for the two graphene systems, but only exists under specific conditions for the 2DEG. The counterparts of the transmission in the conductance profile are also given for the three materials, which may be used as high-performance devices based on the bilayer graphene.