The asymmetry of the tunneling time in type II semiconductor heterostructures

The tunneling time asymmetry in type II semiconductor heterostructures is related to the phase difference of the reflection coefficients for the two tunneling directions. Analytical expressions and numerical simulations are given for the difference between the left-to-right and right-to-left tunneling times in asymmetric, single and multiple barrier type II heterostructures.     

Tunneling time and the post-tunneling position of an electron through a potential barrier in an anisotropic semiconductor

Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are also included.     

半导体量子器件物理讲座第四讲 共振隧穿器件及其电路应用

当一个电子的能量低于势垒高度时,它仍可以隧穿通过势垒,在一定条件下,双势垒结构中电子的隧穿几率甚至可以接近1,利用这种共振隧穿现象可以做成共振隧穿二极管,它的电流－电压特性曲线中会出现负微分电阻,利用这种负阻效应可以做成高频振荡器和倍频器等电子器件,双势垒结构与通常的双极晶体管结合可以做成共振隧穿双极晶体管,它们可以用来做成多态记忆器和模数转换器等器件。     

Effects of periodic modulation on the nonlinear Landau--Zener tunneling

We study the Landau-Zener tunneling of a nonlinear two-level system by applying a periodic modulation on its energy bias. We find that the two levels are splitting at the zero points of the zero order Bessel function for high-frequency modulation. Moreover, we obtain the effective coupling constant between two levels at the zero points of the zero order Bessel function by calculating the final tunneling probability at these points. It seems that the effective coupling constant can be regarded as the approximation of the higher order Bessel function at these points. For the low-frequency modulation, we find that the final tunneling probability is a function of the interaction strength. For the weak inter-level coupling case, we find that the final tunneling probability is more disordered as the interaction strength becomes larger.     

多晶La0.7Sr0.3MnO3的低温输运性质和磁电阻效应

详细研究了由纳米晶粒组成的块体多晶La_0.7Sr_0.3MnO₃(LSM)的电阻率和磁电阻效应,以及它们的温度依赖性.随着温度从室温降低,电阻率(ρ)在250K附近存在一最大值,低于该温度后,样品表现为金属导电特性,随后在50K附近存在一极小值.也就是说在低于50K的温度范围内,随着温度降低ρ反而升高,表现为绝缘体性的导电特性.经研究发现,这种随温度降低ρ反而增加的现象与隧穿效应的理论模型(lnρ∝T^-1/2)符合得很好 关键词： 0.7Sr_0.3MnO₃')" href="#">多晶La_0.7Sr_0.3MnO₃ 隧道效应 隧道磁电阻效应     

The critical role of the barrier thickness in spin filter tunneling

Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.     

Influence of Interorbital Interference on Tunneling Process in STM

We present a theoretical study of the influence of intra-atomic interorbital interference on the formation of STM images of metal surfaces. The obtained results show that this kind of interference may modify significantly the tunneling current by the increase or decrease of the current contributions flowing through different orbitals of the surface atoms. STM simulations performed for aluminium and nickel surfaces indicate that the height of corrugation and the topographies of STM images of different surfaces depend considerably on this interference.     

隧道磁电阻效应中的两种不同的理论方法

使用两种不同的理论方法来计算磁性隧道结中的隧道磁电阻.结果显示,Slonczewski模型得出的隧道磁电阻比Julliere公式得到的要大得多.在Slonczewski模型中,当两边铁磁体的磁化方向相反时,为了确保平行于界面方向上的动量守恒,费米面上的电子只有一部分参与了隧穿过程;而在隧道哈密顿方法中,则假设费米面上所有的电子都参与了.还发现,在Slonczewski模型中,使用δ势垒与使用方势垒所求得的隧道磁电阻的差别是不大的 关键词： 隧道磁电阻 Slonczewski模型 隧道哈密顿方法 势垒     

Sensitivity of current to energy in scanning tunneling microscopy within the vacuum case

Sensitivity of the tunneling current to electron energy is calculated in the context of scanning tunneling microscopy for the vacuum case by using an appropriate parameter. In addition, a mathematical relationship between this parameter and the phase associated with the involved Schrödinger wavefunctions is obtained.     

磁性隧道结电子输运特性的研究

在Slonczewsik自由电子理论模型下,研究了两铁磁性金属电极被一平面磁性势垒隔开的磁性隧道结零偏压下的隧穿电导、自旋极化率和隧穿磁阻比率,研究表明隧道结的磁结构对隧穿电导和隧穿磁阻的值有很大的影响,当两磁性电极分子场方向相同,且都与势垒层分子场反平行时,隧穿电导数值达到最大,两者平行时,其数值最小,同时还分析了分子场的相对取向等对磁性隧道结自旋极化电子输运性质的影响。研究结果对自旋电子器件的设计具有一定的指导意义。     

磁性隧道结电子输运特性的研究

在Slonczewsik自由电子理论模型下,研究了两铁磁性金属电极被一平面磁性势垒隔开的磁性隧道结零偏压下的隧穿电导、自旋极化率和隧穿磁阻比率,研究表明隧道结的磁结构对隧穿电导和隧穿磁阻的值有很大的影响,当两磁性电极分子场方向相同,且都与势垒层分子场反平行时,隧穿电导数值达到最大,两者平行时,其数值最小,同时还分析了分子场的相对取向等对磁性隧道结自旋极化电子输运性质的影响.研究结果对自旋电子器件的设计具有一定的指导意义.     

能量与空间分辨的单分子显微术--透过碳笼"看"富勒烯包合物内的金属原子

文章作者用探测扫描隧道电流微分谱的方法，对金属富勒烯包合物分子进行了研究，得到了Dy@C82同分异构体Ⅰ的金属-碳笼杂化态在实空间的能量分布图，通过将实验与理论模拟的结果进行比较，推断出Dy原子在碳笼中的位置以及金属富勒烯包合物分子在衬底表面的吸附取向．这项技术为单分子纳米器件的表征和诊断提供了新的途径．     

声波在一维声子晶体中共振隧穿的研究

通过从实验和理论方面对声波在一维声子晶体单晶体和被小的共振腔分开的双晶体中传播时发生的隧穿和共振隧穿现象的研究，观察到了声子晶体单晶体在带隙频率范围内发生的隧穿现象，而对于双晶体样品，在带隙频率范围内出现了很强的共振透射峰.共振发生时，实验测得的群时间很大，但是没有共振时，群速度却很快. 关键词： 声波 声子晶体 隧穿 共振     

Single quantum dots as scanning tunneling microscope tips

We report the use of single quantum dot structures as tips on a scanning tunneling microscope (STM). A single quantum dot structure with a diameter of less than 200 nm and a height of 2 μm was fabricated by reactive ion etching. This dot was placed on a 40 μm-high mesa and mounted on the tip of a STM. The topography of large structures such as quantum wires or gold test substrates is clearly resolved with such a tip. To check the transport properties of the tip, quantum dot arrays were fabricated on resonant tunneling double barrier structures using the same process parameters. Conventional tunneling spectroscopy clearly resolved the 0D states in our samples. Using a metal substrate as second electrode such STM tips can be used to perform high resolution energy spectroscopy on single dots and free standing wire structures.     

铜箔上生长的六角氮化硼薄膜的扫描隧道显微镜研究

利用扫描隧道显微镜研究了采用化学气相沉积法在铜箔表面生长出的高质量的六角氮化硼薄膜. 大范围的扫描隧道显微镜图像显示出该薄膜具有原子级平整的表面, 而扫描隧道谱则显示, 扫描隧道显微镜图像反映出的是该薄膜样品的隧穿势垒空间分布. 极低偏压的扫描隧道显微镜图像呈现了氮化硼薄膜表面的六角蜂窝周期性原子排列, 而高偏压的扫描隧道显微镜图像则呈现出无序和有序排列区域共存的电子调制图案. 该调制图案并非源于氮化硼薄膜和铜箔衬底的面内晶格失配, 而极有可能来源于两者界面处的氢、硼和/或氮原子在铜箔表面的吸附所导致的隧穿势垒的局域空间分布.     

Quantum tunneling of ultracold atoms in optical traps

We review our theoretical advances in quantum tunneling of BoseEinstein condensates in optical traps and in microcavities. By employing a real physical system, the frequencies of the pseudo Goldstone modes in different phases between two optical traps are studied respectivdy, which are tile crucial feature of the non-Abelian Joseptmon effect. When the optical lattices are under gravity, we investigate the quantum tummling in the ＂Wannier-Stark localization＂ regime and ＂Lan（lau Zener tunneling＂ regime. We finally get the total decay rate and the rate is valid over the entire range of temperatures. At high temperatures, we show how the decay rate reduces to the appropriate results for the classical thermal activation. At hltermediate temperatures, the results of tile total decay rate are consistent with the thermally assisted tunneling. At low temperatures, we obtain the pure quantmn tunneling ultimately. And we study the alternating-current and direct-current （ac and de） photonic 3osephson effects in two weakly linked microcavities containing ultracold two-level atones, which allows for direct observation of the effects. This enables new investigations of the effect of maw-body physics in strongly coupled atom-cavity systems and provides a strategy for constructing novel interference devices of coherent photons. In addition, we propose the experimental protocols to observe these quantmn tunneling of Bose- Einstein condensates.     

Stochastic resonance in a tunnel diode in the presence of white or coloured noise

Summary We study the signal-to-noise ratio, signal and noise output levels in a fast bistable electronic system: a tunnel diode. We observe stochastic resonance when the system is driven by a sum of a small periodic signal and noise. The phenomenon is investigated for values of the driving frequency as high as 10 kHz. This is the highest frequency value used in SR experiments until now. In the presence of ?white noise?, we observe a nonmonotonic behavior characterized by a sharp dip in the output noise level measured at 100Hz and 1 kHz. A similar behavior is predicated by recent theories. We also present preliminary experimental results of SR in the presence of an Ornstein-Uhlenbeck noise. For the set of investigated values of the correlation time of the noise, we still observe the characteristic dip in the output noise levels. The height of the dip is affected by the correlation time of the noise. Paper presented at the International Workshop ?Fluctuations in Physics and Biology: Stochastic Resonance, Signal Processing and Related Phenomena?, Elba, 5–10 June 1994.     

W型单模单偏振光纤隧道效应的模场分析

给出了W型单模单偏振光纤基模模场在截止前,截止时和截止后的具体计算方法,利用基模模场分析了W型单模单偏振光纤隧道效应发生的过程,强弱和方向,得出了W型单模单偏振光纤隧道效应随其基模的截止而显著增强,并且主要集中在椭圆内包层短半轴方向的结论。