Synthesis and thermoelectric properties of Cu excess Cu2ZnSnSe4

Quaternary stannites with an excess of copper were successfully synthesized by reacting the constituent elements and subsequent solid state annealing, followed by densification by hot‐pressing. The composition for each specimen was confirmed with a combination of Rietveld refinement and elemental analysis. Their high temperature thermoelectric properties were measured from 300 K to 800 K and compared with that of Cu₂ZnSnSe₄. The thermal conductivity decreases significantly with increasing Cu content at elevated temperatures due to the crystal structure of this material system. A maximum ZT value of 0.86 was obtained at 800 K for the specimen with the highest Cu content, Cu_2.2Zn_0.8SnSe₄. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Cu2ZnSn(S1–xSex)4 thin film solar cells prepared by water‐based solution process

The kesterite Cu₂ZnSn(S_1–xSe_x)₄ (CZTSSe) thin film solar cell has been developed rapidly due to its excellence in structural and optical properties and its abundance in raw materials. Both vacuum‐based and solution‐based methods have been successfully employed to fabricate CZTSSe thin film solar cells. In this Letter, we report an environmentally friendly, water‐based, solution process for fabrication of high‐efficiency CZTSSe thin film solar cells. High quality CZTSSe thin film is obtained by selenization under high temperature and Se vapor. An efficiency of 6.2% is achieved on CZTSSe thin film solar cell fabricated by such water‐based solution process. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Polyvinylpyrrolidone (PVP) assisted single‐step synthesis of kesterite Cu2ZnSnS4 nanoparticles by solvothermal process

Quaternary kesterite‐type Cu₂ZnSnS₄ (CZTS) nanoparticles (NPs) were successfully synthesized by a single‐step solvothermal process. Semiconductor CZTS nanoparticles were obtained from ethylene glycol (EG) and CZTS precursor after solvothermal process at 180 °C for 30 h in polyvinylpyrrolidone (PVP) medium. The synthesized CZTS NPs were further annealed at 450 °C in nitrogen atmosphere and used for further characterizations. The CZTS NPs were characterized using X‐ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), micro Raman spectroscopy, high resolution transmission electron microscopy (HRTEM) and X‐ray photoelectron spectroscopy (XPS). The optical properties of the CZTS NPs were recorded by UV–vis absorption spectroscopy. The results showed that the synthesized CZTS nanoparticles are kesterite‐type CZTS, with good crystallinity and a stoichiometric composition. Moreover, the prepared nanoparticles have a size ranging from 5–7 nm and a band gap of ～1.5 eV.

     

Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Cu₂ZnSi(S,Se)₄ and Cu₂Si(S,Se)₃ are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu₂SiS₃, Cu₂SiSe₃and Cu₂ZnSiSe₄thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X‐ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu₂Si(S,Se)₃ and Cu₂ZnSiSe₄phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 µm. The band gap of the ternary Cu₂SiSe₃ and Cu₂SiS₃, and quaternary Cu₂ZnSiSe₄ based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Photo‐enhanced catalytic activity of spray‐coated Cu2SnSe3 nanoparticle counter electrode for dye‐sensitised solar cells

Cu₂SnSe₃ nanoparticles are synthesised using oleylamine as both a solvent and capping agent and spray coated to form dye‐sensitised solar cell (DSSC) counter electrodes (CEs) using earth‐abundant elements. The film requires annealing at only 400 °C in nitrogen, which is a lower temperature than previous reports of both Cu₂SnSe₃and Cu₂ZnSnSe₄ films, also avoiding the use of Se gas. The composition and phase of the material is confirmed to be kesterite Cu₂SnSe₃. DSSCs using Cu₂SnSe₃ CEs give a power conversion efficiency of 4.87%, compared to 5.35% when using Pt. Electrochemical impedance spectroscopy indicates that the performance of the Cu₂SnSe₃ CE is enhanced under illumination, leading to a drop in the charge transfer resistance. This illumination‐induced enhancement of the catalytic activity provides a novel mechanism for the enhancement of CE performance in DSSCs.

     

Back contact–absorber interface modification by inserting carbon intermediate layer and conversion efficiency improvement in Cu2ZnSn(S,Se)4 solar cell

Carbon layers have been employed as intermediate layers between Mo back contact and Cu₂ZnSn(S_1–xSe_x)₄(CZTSSe) absorber film prepared by sol–gel and post‐selenization method. Carbon layers with appropriate thickness can significantly inhibit the formation of MoSe₂ and voids at bottom region of the absorber, and therefore reduce the series resistance remarkably. The conversion efficiency can be boosted by the introducing of the carbon layer from 6.20% to 7.24% by enhancement in short current density, fill factor and open voltage in comparison to the reference sample without carbon layer. However, excess thickness of carbon layer will worse device performance due to the deteriorated absorber crystallinity. In addition, the time‐resolved photoluminescence analysis shows that inserting the carbon layer with suitable thickness does not introduce recombination and lower minority lifetime. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Proposition of an Environment Friendly Triple Junction Solar Cell Based on Earth Abundant CBTSSe/CZTS/ACZTSe Materials

We propose a triple junction CBTSSe/CZTS/ACZTSe solar cell using earth abundant and non‐toxic CBTSSe, CZTS, and ACZTSe as the primary absorbing layers for top, middle, and bottom cells, respectively. Using rigorous optoelectronic simulation, we analyze the performance of the proposed cell and vary absorber thicknesses in order to maximize its efficiency. The maximum obtainable efficiency is calculated to be 36.04% with 2.73 V open circuit voltage, 17.88 mA cm^?2 short circuit current density, and 73.7% fill factor including Shockley–Read–Hall, surface and radiative recombination mechanisms. The maximum achievable efficiency can be obtained from an optimized device structure with 250, 300, and 1000 nm thicknesses of CBTSSe, CZTS, and ACZTSe, respectively. The design and analyses presented in this work would help in achieving highly efficient eco‐friendly inorganic solar cells.     

二维MoSi2N4WSe2异质结的第一性原理研究

实验上新合成的MoSi2N4（MSN）由于其独特的七原子层结构和电子特性引起了人们的广泛关注。本文搭建了一种由二维MSN与二维WSe2（WS）垂直堆垛而成的二维MSN/WS异质结,其表现出直接间隙半导体和I型能带排列的特性,具有1.46 eV的带隙。在异质结界面处存在一个由电荷耗尽层MSN指向电荷积累层WS微弱的内建电场。最后,通过施加双轴应变对二维MSN/WS异质结进行调控。发现在正双轴应变的作用下,MSN/WS异质结保持了原来直接带隙半导体和I型能带排列特性;在负双轴应变作用下,MSN/WS异质结由原来的直接带隙半导体转变为间接带隙半导体,当施加的负双轴应变达到-6%与-8%时,I型能带排列转变为Ⅱ型能带排列。     

On the synthesis and properties of ternary copper oxide sulfides (Cu2O1–xSx)

We report on the sputter deposition of copper oxide sulfides Cu₂O_1–xS_x up to a composition of Cu₂O_0.61S_0.39. For higher sulfur contents the films first become amorphous and then change to Cu₂S. Within the range 0 < x < 0.39 the cubic crystal structure is maintained and the lattice constant changes linearly with the sulfur content. The composition of the films is measured by energy dispersive X‐ray fluorescence and suggests the formation of a random alloy. The transmission spectra show a clear red shift of the order of 450 meV (from Cu₂O to Cu₂O_0.61S_0.39) with an average transmission of 70%. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

溶剂热法制备铜锌锡硫粉末及光学性能研究

以金属氯化物作为金属源,硫脲为硫源,乙二醇为溶剂,聚乙烯吡咯烷酮(PVP)为表面活性剂,采用溶剂热法在较低反应温度下合成了Cu2ZnSnS4(CZTS)粉末。利用X射线衍射仪(XRD)、拉曼光谱(Raman)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)对样品的结构和形貌进行表征。利用紫外-可见光谱(UV-Vis)对样品的光学性能进行研究。结果表明,180℃反应25小时的样品均为锌黄锡矿CZTS颗粒,颗粒形貌为表面花状的微球。当体系中PVP含量为0.2g时,微球尺寸约为2.5μm。当体系中PVP含量为0.3g,0.4g,0.5g时,微球尺寸大约为1.1μm。其中,PVP含量为0.4g的样品分散性较好,在可见区有明显的吸收,用外延法得到其禁带宽度约为1.45eV,与太阳能电池所需的最佳禁带宽度接近。     

Significant Enhancement of Hydrogen Production in MoS2/Cu2ZnSnS4 Nanoparticles

Hydrogen produced from water splitting is a renewable and clean energy source. Great efforts have been paid in searching for inexpensive and highly efficient photocatalysts. Here, significant enhancement of hydrogen production has been achieved by introducing ≈1 mol% of MoS₂ to Cu₂ZnSnS₄ nanoparticles. The MoS₂/Cu₂ZnSnS₄ nanoparticles showed a hydrogen evolution rate of ≈0.47 mmol g⁻¹ h⁻¹ in the presence of sacrificial agents, which is 7.8 times that of Cu₂ZnSnS₄ nanoparticles (0.06 mmol g⁻¹ h⁻¹). In addition, the MoS₂/Cu₂ZnSnS₄ nanoparticles exhibited high stability, and only ≈3% of catalytic activity was lost after a long time irradiation (72 h). Microstructure investigation on the MoS₂/Cu₂ZnSnS₄ nanoparticles reveals that the intimate contact between the nanostructured MoS₂ and Cu₂ZnSnS₄ nanoparticles provides an effective one‐way expressway for photogenerated electrons transferring from the conduction band of Cu₂ZnSnS₄ to MoS₂, thus boosting the lifetime of charge carriers, as well as reducing the recombination rate of electrons and holes.     

Surface dynamics of Mo(1 1 0)–H and Mo(1 1 0)–Li

We compare the surface dynamics of the adsorbate systems Mo(1 1 0)–H and Mo(1 1 0)–Li. In both cases electron energy loss spectroscopy measurements revealed strong substrate surface phonon anomalies. Whereas the phonon anomaly of the hydrogen-covered surface was unequivocally assigned to be of the Kohn type, the anomalous behavior of the surface phonons of the lithium-covered surface remained obscure. In this paper we develop an experimental criterion based on the dispersion of adsorbate phonons, which allows to decide whether the observed substrate surface phonon anomaly is of the Kohn type or not. Employing this criterion we now definitely rule out that the anomaly on Mo(1 1 0)–Li is due to the Kohn effect.     

Raman scattering and disorder effect in Cu2ZnSnS4

The Raman spectra of surface regions of bulk Cu₂ZnSnS₄ (CZTS) samples with different Cu and Zn cation content were obtained and the differences in the spectra are attributed to statistical disorder effects in the cation sublattice. This disorder in the Cu and Zn sublattices may initiate a change of the crystal symmetry from kesterite‐type $({I\bar 4})$ to $({I\bar 42m})$ space group. The investigated CZTS crystals grown at high temperature are characterised by the co‐existence of regions with different composition ratio of Cu/(Zn + Sn) which results in kesterite and disordered kesterite phases. The presence of a disordered phase with ${I\bar 42m}$ symmetry is reflected in the appearance of a dominant broadened A‐symmetry peak at lower frequency than the peak of the main A‐symmetry kesterite mode at 337 cm^–1. We suppose that due to a small energy barrier between these phases the transition from one phase to the other can be stimulated by optical excitation of Cu₂ZnSnS₄. The analysis of the Raman spectra measured under different excitation conditions has allowed obtaining first (to our knowledge) experimental evidence of the existence of such optically induced structural transition in CZTS. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Doctor-bladed Cu2ZnSnS4 light absorption layer for low-cost solar cell application

The doctor-blade method is investigated for the preparation of Cu2ZnSnS4 films for low-cost solar cell application.Cu2ZnSnS4 precursor powder,the main raw material for the doctor-blade paste,is synthesized by a simple ball-milling process.The doctor-bladed Cu2ZnSnS4 films are annealed in N2 ambient under various conditions and characterized by X-ray diffraction,ultraviolent/vis spectrophotometry,scanning electron microscopy,and current-voltage(J-V) meansurement.Our experimental results indicate that(i) the X-ray diffraction peaks of the Cu2ZnSnS4 precursor powder each show a red shift of about 0.4°;(ii) the high-temperature annealing process can effectively improve the crystallinity of the doctor-bladed Cu 2 ZnSnS 4,whereas an overlong annealing introduces defects;(iii) the band gap value of the doctor-bladed Cu 2 ZnSnS 4 is around 1.41 eV;(iv) the short-circuit current density,the open-circuit voltage,the fill factor,and the efficiency of the best Cu2ZnSnS4 solar cell obtained with the superstrate structure of fluorine-doped tin oxide glass/TiO2/In2S3/Cu2ZnSnS4/Mo are 7.82 mA/cm2,240 mV,0.29,and 0.55%,respectively.     

High‐temperature thermoelectric properties of Cu2In4Te7

Cu₂Ga₄Te₇ has recently been reported to have a relatively high thermoelectric (TE) figure of merit (ZT). However, the TE properties of Cu₂In₄Te₇, which has the same defect zinc‐blende structure as Cu₂Ga₄Te₇, have been hardly investigated. Here, we demonstrate that Cu₂In₄Te₇ has relatively high ZT values that are similar to those of Cu₂Ga₄Te₇. High‐density polycrystalline bulk samples of Cu₂In₄Te₇ were prepared and their electrical resistivity (?), Seebeck coefficient (S), and thermal conductivity (κ) were measured. Cu₂In₄Te₇ has a maximum ZT of 0.3 at 700 K, with ?, S, and κ values of 62.1 × 10^–5 Ω m, 394 μV K^–1, and 0.61 W m^–1 K^–1, respectively. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of copper ions implantation on corrosion behavior of zircaloy-4 in 1 M H2SO4

In order to study the effect of copper ion implantation on the aqueous corrosion behavior, samples of zircaloy-4 were implanted with copper ions with fluences ranging from 1 × 10¹⁶ to 1 × 10¹⁷ ions/cm², using a metal vapor vacuum arc source (MEVVA) operated at an extraction voltage of 40 kV. The valence states and depth distributions of elements in the surface layer of the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES), respectively. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the copper ion implantation. The potentiodynamic polarization technique was employed to evaluate the aqueous corrosion resistance of implanted zircaloy-4 in a 1 M H₂SO₄ solution. It was found that a significant improvement was achieved in the aqueous corrosion resistance of zircaloy-4 implanted with copper ions when the fluence is smaller than 5 × 10¹⁶ ions/cm². The corrosion resistance of implanted samples declined with increasing the fluence. Finally, the mechanism of the corrosion behavior of copper-implanted zircaloy-4 was discussed.