双向低触发电压横向晶闸管放电管研究

依据触发电压VS、触发电流IS、维持电流IH及触发电压、维持电流高低温变化率指标要求,利用Silvaco-TCAD半导体器件仿真软件完成了双向低触发电压横向晶闸管(SCR)放电管的设计.详细分析了对触发特性产生显著影响的结构参数(N-衬底区、寄生PNP晶体管P-集电区、寄生NPN晶体管P-基区、N+阴极区、N+触发区、...     

超薄多晶硅的掺杂、钝化及光伏特性研究

本文对70 nm超薄多晶硅的掺杂工艺、钝化性能及光伏特性进行了研究。确定了70 nm超薄多晶硅的掺杂工艺,研究表明当离子注入剂量为3.2×10¹⁵ cm^-3,在855 ℃退火20 min时,70 nm超薄多晶硅的钝化性能可以达到与常规120 nm多晶硅相当的水平,且70 nm多晶硅的表面掺杂浓度达到5.6×10²⁰ atoms/cm³,远高于120 nm掺杂多晶硅的表面掺杂浓度(2.5×10²⁰ atoms/cm³)。基于70 nm超薄多晶硅厚度减薄和高表面浓度掺杂的特点,较低的寄生吸收和强场钝化效应使得在大尺寸(6英寸)直拉单晶硅片上加工的N型TOPCon太阳能电池的光电转换效率得到明显提升,主要电性能参数表现为:电流I_sc升高20 mA,串联电阻R_s降低,填充因子FF增加0.3%,光电转换效率升高0.13%。     

基于温和氧等离子体实现硫化钼P型掺杂的研究

采用一种处于电容放电模式(E-mode)的温和氧气电容耦合等离子体技术对薄层MoS2进行处理,实现了P型掺杂.通过光学显微镜、拉曼光谱、X射线光电子能谱和场效应晶体管的转移曲线测试,对MoS2的掺杂机理进行了分析,发现温和氧气等离子体处理过程中氧和钼能形成Mo-O键,从而提供额外的空穴使其电子浓度下降,最终导致其开启电压变高、输出电流下降,同时氧气的化学吸附诱导在MoS2层中引入了P型掺杂.此研究为实现MoS2的P型掺杂提供了新途径.     

低表面浓度磷掺杂的高方阻P-N结发射极制备工艺

制备P-N结发射极的常规扩散工艺主要包括预淀积和高温推阱两个步骤。本文采用在高温推阱之后施加一步保温过程的工艺方案,在p型多晶硅片上制备了低表面浓度磷掺杂的高方阻发射极,研究了不同保温温度对P-N结发射极的方阻和磷原子掺杂分布的影响。结果表明,当完成高温推阱后,在650~750 ℃温度范围内施加保温工艺所得P-N结的方阻值反向升高,同时二次离子质谱(SIMS)测试结果表明,硅片表层区域的磷原子掺杂浓度相应降低。与常规扩散工艺相比,采用在700 ℃下保温15 min时所得P-N结的方阻升高约3.2 Ω/□,所得相应太阳能电池光电转换效率E_ff达到18.69%,比产线工艺提高约0.23%。     

基于正交实验的100 mm4°偏轴SiC衬底外延均匀性研究

采用行星热壁式SiC外延炉对100 mm 4°偏轴4H-SiC衬底外延工艺进行了研究.分析了氢气预刻蚀工艺对4°偏轴衬底外延材料表面形貌的影响.采用双指标正交实验,通过极差分析的方法研究了C/Si比、Cl/Si比、主氢流量、生长温度、三路气体比等工艺参数对SiC外延厚度和掺杂浓度均匀性指标影响的主次顺序,并给出了优化的外延参数.采用该工艺条件制得的无台阶聚集形貌的SiC外延片片内厚度均匀性和浓度均匀性分别是1.23;和3.32;.     

Yb3+:YVO4晶体的生长及光谱性能研究

采用提拉法生长出光学质量优良的Yb3+:YVO4晶体,研究生长过程中工艺参数的控制.测得掺杂浓度为18.1;Yb3+:YVO4晶体中Yb3+离子的有效分凝系数Keff为0.96.测定了不同Yb3+离子掺杂浓度晶体的吸收光谱和荧光光谱,并分别计算了不同掺杂浓度下Yb3+:YVO4晶体的光谱参数.本文总结和解释了掺杂浓度影响其性能的规律,讨论了Yb3+:YVO4晶体作为激光晶体的优点.     

硅NPN型红外光电晶体管输出光电流及线性度的研究

利用TCAD半导体器件仿真软件详细地分析了在不同上表面非金属接触区域复合速率(FSRV)、光强(Pin)及光照基区横向宽度(SBL)的情况下,硅NPN红外光电晶体管输出光电流(IL)及输出光电流线性度的变化特点和规律.仿真结果表明:当SBL一定时,随着FSRV的增大,在不同P.的情况下,光电晶体管的IL均减小.当FSRV较小(50～5000 cm/s)时,不同Pin情况下光电晶体管的IL差别较小.当FSRV较大(＞5000 cm/s)时,随着FSRV的增大,不同Pin情况下光电晶体管的IL显著降低.当FSRV—定时,随着SBL的增大,不同Pin情况下光电晶体管的IL均有不同程度的增大.随着SBL和Pin的进一步增大,不同FSRV情况下的IL均逐渐趋于饱和状态.当SBL一定时,FSRV越小,IL进入饱和状态所对应的临界Pin越小.当FSRV—定时,SBL越大,IL进入饱和状态所对应的临界Pin越小.     

单晶炉低功耗勾形磁场设计与实现

以单晶炉低功耗勾形磁场为研究对象,采用有限元法对主要结构参数进行了模拟分析与优化设计.并对磁场优化设计参数进行了实验验证.结果表明:磁场分布、磁场纵、横向分量强度,以及线圈电压、线圈电流、线圈功率等关键参数的实验结果均满足设计要求;实验结果与模拟结果相吻合,其平均误差小于5;;这说明模拟方法是正确的,结果符合实际、可运用于实际设计.该研究为低功耗勾形磁场设计以及广泛应用提供了一种可靠的模拟方法和经验数据.     

Tb掺杂CaMnO3氧化物材料热电输运性能的研究

采用溶胶-凝胶法结合陶瓷烧结工艺制备了Tb掺杂CaMnO3基氧化物热电材料,系统研究了Tb掺杂材料物相组成、微观组织和和电输运性能.结果表明,Tb掺杂试样均为单一物相的CaMnO3晶体材料.随着Tb掺杂量的增加,试样晶粒逐渐细化.所得CaMnO3基材料内部晶粒互连,试样结构较为致密.所有Tb掺杂试样电阻率随温度升高而降低,呈明显的半导体传输特性,其中Tb掺杂量为0.14的试样电阻率最低.Tb掺杂试样Seebeck系数绝对值随掺杂量的增加而降低,这是由于Tb掺杂引入的电子型载流子造成的.所有试样功率因子均随温度升高而逐渐增加,并且所有Tb掺杂试样的功率因子均大于未掺杂试样.其中Tb掺杂量为0.08的块体试样功率因子在测试温度最高点973 K时达到最大值2.0×10-4 W·m-1·K-2,远高于未掺杂试样,通过稀土元素Tb掺杂可以优化CaMnO3基过渡金属氧化物材料的电性能.     

人造金刚石加热系统分析及其精密交流调功器设计

建立了加热系统的数学模型,深入分析各类交流加热的特性及差别,指出恒功率加热方式温控效果最佳且与直流加热无明显区别.建立恒功率交流加热系统SABER仿真模型并深入分析系统构成特性,设计一个基于适当功率滤波和输出偏置的模拟PID控制器.仿真和实验结果表明,所设计交流调功器具有成本低、实时性强、适应性好、控制性能佳、温控精度高等特点,能较好地满足金刚石合成工艺的要求.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.