膜厚对Nd掺杂钙锶铋钛铁电薄膜结构及性能的影响

采用Sol-gel法和层层快速退火工艺在Pt/Ti/SiO2/Si基片上制备了厚度不同Nd掺杂的钙锶铋钛(C0.4S0.6NT)铁电薄膜.研究了单层膜厚和总膜厚对于薄膜的(200)择优取向、显微结构及铁电性能的影响.发现:恰当的单层膜厚度,有助于薄膜(200)峰的择优取向和铁电性能;单层膜厚度约为60 nm,总厚度约为420 nm时,C0.4S0.6NT薄膜的,I(200)/[I(119)+I(001)]相对强度较大,a轴取向的晶粒较多,具有较好的铁电性能,剩余极化(Pr)和矫顽场(Ec)分别为13.251μC/cm2,85.248 kV/cm.     

溶胶-凝胶法制备LaNiO3薄膜及其电学性能研究

采用溶胶-凝胶法在SiO2/Si衬底上制备了LaNiO3薄膜,并通过改变退火温度和薄膜厚度对其微结构和电学性能进行了表征测试.X射线衍射(XRD)和电阻率测试结果表明,随着退火温度和厚度的增加,LaNiO3薄膜的结晶质量明显提高,薄膜电阻率也逐渐下降.当退火温度为800℃时,厚度为630 nm的LaNiO3薄膜电阻率最小,达到了1.37 mQ·cm.此外,利用LaNiO3薄膜作为下电极制备的2; Nb-Pb(Zr06Ti0.4)O3薄膜呈良好的钙钛矿相结构,且经过1010铁电循环测试周期以后,2; Nb-Pb(Zr06Ti0.4)O3薄膜的铁电性能未出现明显下降,表明该LaNiO3薄膜是生长PNZT铁电薄膜的优良下电极材料.     

溶胶-凝胶法制备Ca0.4Sr0.6Bi4Ti4O15细晶陶瓷

采用凝胶预碳化处理工艺制备了颗粒粒径较小,无硬团聚的Ca0.4Sr0.6Bi4Ti4O15纳米粉体,以Ca0.4Sr0.6Bi4Ti4O15非晶团簇粉体为陶瓷素坯的原料,同组分高浓度的Ca0.4Sr0.6Bi4Ti4O15溶胶为粘结剂,制备了Ca0.4Sr0.6Bi4Ti4O15细晶陶瓷,研究了Ca0.4Sr0.6Bi4Ti4O15粉体的相结构和微观形貌以及陶瓷的显微结构和铁电性能.实验结果表明:700 ℃焙烧粉体呈现为非晶团簇,800 ℃焙烧粉体形成了纯层状钙钛矿结构,粒径在100～150 nm之间,无硬团聚;950 ℃烧结的Ca0.4Sr0.6Bi4Ti4O15细晶陶瓷结构致密,晶粒尺寸在0.2～0.5 μm之间,其铁电性能优良,剩余极化Pr=12.5 μC/cm2,矫顽场强Ec=50 kV/cm.     

薄膜厚度对ZnO:Y薄膜结构及光电特性影响

室温下采用射频磁控溅射法在玻璃衬底上制备出了具有良好附着性、低电阻率和高透过率的新型ZnO∶Y(ZnO掺杂Y2O3,简称ZnO∶Y)透明导电薄膜。研究了薄膜厚度对ZnO∶Y薄膜结构、光电特性的影响。结果表明:不同厚度的ZnO∶Y薄膜均为多晶薄膜,具有ZnO六角纤锌矿结构,最佳取向为(002)方向。随薄膜厚度增加,其电阻率减小,当薄膜厚度增至800 nm时,其电阻率为8.36×10-4Ω.cm,迁移率为15.3 cm2.V-1.s-1,载流子浓度为4.88×1020cm-3。不同厚度的薄膜在可见光范围内平均透过率均为90%以上,当薄膜厚度从200 nm增加到800 nm时,薄膜禁带宽度从3.68 eV减小到3.61 eV。     

La0.5Sr0.5CoO3/Pb(Zr0.4Ti0.6)O3/La0.5Sr0.5CoO3铁电电容器的结构和性能研究

采用磁控溅射法和脉冲激光沉积法,在SrTiO3(001)衬底上制备了La0.5Sr0.5CoO3(70 nm)/Pb(Zr0.4Ti0.6)O3(70 nm)/La0.5Sr0.5CoO3(70 nm) (LSCO/PZT/LSCO)铁电电容器异质结.X射线衍射结果表明:LSCO和PZT薄膜均为外延结构.在5 V的外加电压下, LSCO/PZT/LSCO电容器具有较低的矫顽电压(0.49 V),较高的剩余极化强度(41.7 μC/cm2 )和较低的漏电流密度(1.97×10-5 A/cm2),LSCO/PZT/LSCO电容器的最大介电常数为1073.漏电流的分析表明:当外加电压小于0.6 V时,电容器满足欧姆导电机制;当外加电压大于0.6 V时,符合空间电荷限制电流(SCLC)导电机制.     

烧结温度对(Ba0.85 Ca0.15)(Ti0.9 Hf0.1)O3陶瓷压电性能的影响

采用传统固相反应法在系列烧结温度下制备了(Ba0.85 Ca0.15)(Ti0.9 Hf0.1)O3无铅压电陶瓷,并对陶瓷样品的晶格结构、表面形貌、铁电性能、压电性能和常温介电性能进行了测试与分析.结果表明:样品均具有纯的钙钛矿结构,随着烧结温度的升高,样品的晶体结构由立方相转变为四方相;压电系数和机电耦合系数随之增大,当烧结温度为1340℃时,样品的晶粒尺寸较为均匀,约为2～7μm,并且样品压电系数最大为250 pC·N-1,此时,2Pr=13.33μC·cm-2,2Ec=5.91 kV·cm-1,i=0.05 mA,ε=1803,tanδ≈0.017,Kp=0.32,Qm=116.     

衬底温度对磁控共溅射制备的Zn(O,S)薄膜结构和光电性能的影响

采用磁控共溅射沉积法,以氧化锌和硫化锌为靶材,在不同衬底温度下制备了Zn(O,S)薄膜.采用X射线衍射仪、原子力显微镜、紫外-可见-近红外分光光度计、霍尔测试仪和拉曼光谱测试仪对Zn(O,S)薄膜进行了结构和光电特性研究.结果表明:Zn(O,S)薄膜具有六方纤锌矿结构,属于二模混晶;在可见-近红外波段的吸收率小于5;;其为N型半导体,电学特性随衬底温度的变化而变化;衬底温度为200℃时制备的厚度为167 nm的Zn(O,S)薄膜的载流子浓度达到8.82×1019 cm-3,迁移率为19.3 cm2/V·s,表面呈金字塔结构.     

CoFe2O4/Ba0.9Ca0.1Ti0.9Zr0.1O3双层复合薄膜的磁电性能研究

通过脉冲激光沉积法(PLD)在(001)-SrRuO3/SrTiO3(SRO/STO)衬底上生长了CoFe2O4/Ba0.9Ca0.1Ti0.9Zr0.1O3(CFO/BCZT)双层磁电复合薄膜.采用X射线衍射仪(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)测试样品的晶体结构及形貌.XRD结果显示:单相BCZT铁电薄膜、CFO铁磁薄膜及CFO/BCZT磁电复合薄膜均为(00l)择优取向结构.物理性能测试结果表明:CFO/BCZT复合薄膜具有良好的铁电性能(剩余极化值,Pr=15.1μC/cm2)、铁磁性能和磁电耦合性能(磁电耦合系数,αE～82.4 mV·cm-1·Oe-1).这种无铅的磁电复合薄膜为设计新型多铁电子器件提供了一种选择.     

含Ni-Nb阻挡层的硅基Pb(Zr0.4,Ti0.6)O3电容器的制备及铁电性能研究

采用Ni-Nb薄膜作为导电阻挡层,以La0.5Sr0.5CoO3(LSCO)为底电极,构建了LSCO/Pb(Zr0.4,Ti0.6)O3(PZT)/LSCO异质结电容器。使用X射线衍射仪和铁电测试仪对其进行结构表征和性能测试。实验发现:Ni-Nb薄膜为非晶结构,PZT薄膜结晶状况良好。LSCO/PZT/LSCO电容器在5 V外加电压测试下,电滞回线具有良好的饱和趋势,剩余极化强度Pr为35.5μC/cm2,矫顽电压Vc为1.42 V,电容器具有良好的抗疲劳特性和保持特性。     

电解液浓度对BaxSr(1-x)TiO3微弧氧化膜微观结构及介电性能的影响

用Ba(OH)2·8H2O和Sr(OH)2·8H2O配制电解液,工艺参数分别设置为电流密度20 A/dm2、电流频率100Hz、反应时间20 min及占空比85;,采用微弧氧化法在工业纯Ti板(99.5;)表面原位生长BaxSr(1-x)TiO3薄膜.分析了相同Ba2+ /Sr+比条件下,电解液浓度对薄膜物相、表面形貌及薄膜厚度的影响.结果表明:所得薄膜均主要由四方相Ba0.5Sr0.5TiO3构成;Ba2+和Sr2+各为0.2 mol/L时所得薄膜的表面平整度及致密性最好,表面粗糙度值最小,并检测了该薄膜在不同频率下的介电常数和介电损耗,发现两者均随频率的增加而减小;薄膜厚度随电解液浓度的增加而增加.     

rGO/Ag0.005 Sn0.995 Se热电复合材料的制备及性能研究

为了实现石墨烯纳米相在基体中的均匀分散,提高多晶SnSe的热电性能,本文首先利用熔炼法合成了多晶Ag0.005 Sn0.995 Se材料,然后采用液相沉淀法实现了Ag0.005 Sn0.995 Se与氧化石墨烯(GO)均匀复合,再经过氢气还原和SPS烧结制备得到rGO/Ag0.005 Sn0.995 Se复合材料.研究结果表明,复合rGO显著提高了载流子迁移率,电导率由基体的33.64 S/cm提高到39.29 S/cm.同时第二相rGO的引入,增加了晶界数量,增强了声子散射,降低了热导率.当复合rGO量为0.50wt; 时,在垂直热压方向上获得了最高的ZT值0.73(773 K).     

美拉德法制备SOFCs用Gd0.2Ce0.8O1.9电解质粉体的研究

使用无水葡萄糖作为有机溶剂,尿素作为助剂,采用绿色环保的美拉德法一步合成了纳米钆掺杂的氧化铈晶体(Gd0.2 Ce0.8 O1.9,GDC).通过TG/DSC、XRD、Raman spectroscopies、FESEM、in-situ XRD和交流阻抗谱等技术手段对合成的GDC材料进行结构和性能表征.结果表明,合成的GDC粉末具有单一的立方萤石结构,在10～50 nm范围内形成尺寸可调、粒径分布窄、结晶度高的纯相纳米颗粒.800℃煅烧的粉体经1550℃烧结后可以得到平均晶粒尺寸为3μm,晶界数量较少的致密GDC电解质片,其具有较好的电化学性能和结构稳定性.本文工作表明美拉德法适用于GDC的合成.     

An ab initio-based approach to the stability of GaN(0 0 0 1) surfaces under Ga-rich conditions

Structural stability of GaN(0 0 0 1) under Ga-rich conditions is systematically investigated by using our ab initio-based approach. The surface phase diagram for GaN(0 0 0 1) including (2×2) and pseudo-(1×1) is obtained as functions of temperature and Ga beam equivalent pressure by comparing chemical potentials of Ga atom in the gas phase with that on the surface. The calculated results reveal that the pseudo-(1×1) appearing below 684–973 K changes its structure to the (2×2) with Ga adatom at higher temperatures beyond 767–1078 K via the newly found (1×1) with two adlayers of Ga. These results are consistent with the stable temperature range of both the pseudo-(1×1) and (2×2) with Ga adatom obtained experimentally. Furthermore, it should be noted that the structure with another coverage of Ga adatoms between the (1×1) and (2×2)-Ga does not appear as a stable structure of GaN(0 0 0 1). Furthermore, ghost island formation observed by scanning tunneling microscopy is discussed on the basis of the phase diagram.     

Theoretical investigation on the decomposition process of GaN(0 0 0 1) surface under a hydrogen atmosphere

The activation energies for Ga and N desorption from a GaN surface were calculated using the density functional theory to understand the detailed decomposition process of the hydrogen terminated GaN(0 0 0 1) Ga and N surfaces under a hydrogen atmosphere. It was found that the Ga atoms on the hydrogen terminated GaN(0 0 0 1) Ga surface desorbed as GaH molecules from the surface while the N atoms on the hydrogen terminated GaN(0 0 0 1) N surface desorbed as NH₃ molecules from the surface. The desorption energies of GaH and NH₃ on the hydrogen terminated surface were more consistent with the previous experimental values than those on the ideal surface. These results suggest that the initial surface structure of the GaN(0 0 0 1) surface is terminated with hydrogen.     

Electron microscopy analysis of dislocation behavior in HVPE-AlGaN layer grown on a stripe-patterned (0 0 0 1) sapphire substrate

Microstructures were investigated by transmission electron microscopy (TEM) and scanning electron microscopy (SEM) in order to clarify the dislocation behavior in AlGaN layers HVPE-grown on a stripe-patterned sapphire (0 0 0 1) substrate. SEM observation revealed very clearly the growth process: if AlGaN starting to grow from the side-wall of patterned substrate develops, a poly-crystalline region is formed up to the top surface of thin film. When the growth from the upper side (terrace) of patterned substrate is predominant, AlGaN becomes a single-crystalline layer with a flat surface. Threading dislocations (TDs) generated from the interface to the terrace propagate upwards, inclining to the wing regions. They are scarcely merged with one another. The AlGaN layer on the patterned substrate with a wider groove has a smaller density of dislocation to be about 1×10⁹ cm⁻². There are four types of dislocations: (1) TDs inclining toward 〈1 1¯ 0 0〉 normal to their Burgers vector B; (2) TDs inclining toward 〈2 1¯ 1¯ 0〉 on their slip-plane; (3) TDs inclining largely or horizontal dislocations (HDs) along 〈2 1¯ 1¯ 0〉 and (4) roundly curved HDs lying on (0 0 0 1) plane. Some TDs change the direction of inclination, suggesting that internal stress changed intricately during the growth.     

Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0 0 0 1) substrates grown by MOCVD

GaN films and AlGaN/GaN heterostructures grown on vicinal sapphire (0 0 0 1) substrates by metalorganic chemical vapor deposition (MOCVD) are investigated. It is found that surface morphologies of GaN films depend on the vicinal angle, however, they are not sensitive to the inclination directions of the substrate. The optimized vicinal angle for obtaining excellent surface morphology is around 0.5°. This conclusion is also confirmed by characterizing the electrical property of two-dimensional electron gas (2DEG) in the AlGaN/GaN heterostructure.     

Influence of substrate temperature on nitridation of (0 0 1) GaAs using RF-radical source

The mechanism of nitridation of (0 0 1) GaAs surface using RF-radical source was systematically studied with changing substrate temperature, nitridation time and supplying As molecular beam. It was found from atomic forth microscopy (AFM) measurements that supplying As is very important to suppress the re-evaporation of As atoms and to keep the surface smooth. Reflection high-energy electron diffraction (RHEED) measurements shows that surface lattice constant (SLC) of GaAs of 0.565 nm decreases with increasing the substrate temperature and that it finally relaxes to the value of c-GaN of 0.452 nm, at 570 °C in both [1 1 0] and [1¯ 1 0] directions without concerning with the supply of As molecular beam. But, in the medium temperature range (between 350 and 520 °C), SLC of [1 1 0] direction was smaller than that of [1¯ 1 0] direction. This suggests a relation between the surface structure and the relaxing mechanism of the lattice. The valence band discontinuity between the nitridated layer and the GaAs layer was estimated by using X-ray photoemission spectroscopy (XPS). It was between 1.7 and 2.0 eV, which coincides well with the reported value of c-GaN of 1.84 eV. This suggests that the fabricated GaN layer was in cubic structure.     

Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC

We succeeded in growing high-crystalline-quality thick (1 0 1¯ 1¯) Ga_0.92In_0.08N films on a grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC underlying layer. We also fabricated GaInN/GaN multiple quantum wells (MQWs) with a peak wavelength of 580 nm on a high-crystalline-quality thick GaInN film. The photoluminescence intensity of the MQWs is about six times higher than that of MQWs grown on planar GaN and twice as high as that of MQWs grown on a GaN underlying layer having the same grooved structure.     

Isothermal Ageing in the T Range from 0°C to 180°C of a Technical Al-2.0 at.% Zn-1.3 at.% Mg Alloy after Direct Quench

The variations of the structure and the mechanical properties had been investigated by means of TEM investigations and determination of the microhardness number in the T_a range between 0 °C and 180 °C. The main results are the following: – At the starting period of the isothermal ageing an incubation time, t_inc, occurs. t_inc plotted versus T_a yields two intersecting C curves at about 100 °C. – At T_a = 70 °C the only decomposition product are G.P. zones. – At 70 °C <T_a <100 °C the G.P. zones formed in the first period of decomposition can be transformed into η-phase or spherical hexagonal (S.H.) zones. – Above about 110 °C the precipitates present in the matrix are quasi-homogeneously formed at nucleation sites delivered by clusters of impurity atoms.