液相体系晶须生长两个必要条件之实例

液相体系晶须生长的两个必要条件是:第一,在晶须生长体系中,有“一维方向优势联结”的生长基元存在.第二,有惰性生长基元存在,且这些惰性生长基元必须具有一定的稳定能,同时其稳定又要小于起主要联结作用的生长基元.本文通过列举若干晶须生长实例予以论证.     

人工可控氢氧化镁晶须生长

从负离子配位多面体生长基元模型出发,根据大维度生长基元的结构特性,讨论了人工可控氢氧化镁晶须生长,主要介绍了多元醇法及镁盐过饱和度法.多元醇法的实质是醇中的羟基在一定条件下与大维度生长基元中的羟基发生假联结(即吸附),使得与多元醇发生了假联结的晶面生长速率大大减小或甚至停止生长,而其他晶面仍然保持原有的速率生长以致形成晶须.镁盐过饱和度法就是使得生长基元[Mg-Ax](x-2)-(A≠OH-)的浓度很大,且要远比[Mg-(OH)x](x-2)-组分浓度大4倍以上,以先形成碱式镁盐晶须,碱式镁盐晶须再与适当的碱液反应,即可制备得氢氧化镁晶须.     

负离子配位多面体生长基元与枝蔓晶的形成

本文运用负离子配位多面体生长基元理论模型讨论了KNbO3,β-SiO2和雪花枝蔓晶的形成机理,提出了枝蔓晶的结晶形态和对称性与晶体中的负离子配位多面体相互联结时的稳定方面密切相关.枝蔓晶是在远离晶体生长平衡态的条件下,以负离子配位多面体为生长基元,相互按照最稳定的联结方位延伸的.     

氢氧化镁晶须的制备及其生长机理探讨

以Mgcl2和NaOH为原料,采用直接沉淀法制备氢氧化镁晶须.研究了添加不同晶控剂对氢氧化镁晶须生成的影响,同时对添加硬脂酸锌制备氢氧化镁晶须的工艺进行研究.采用扫描电子显微镜和粒度分析仪对产品进行表征.结果表明,硬脂酸锌和氯化铁对氢氧化镁晶须的生成具有导晶作用;所得产品为长径比10.7的氢氧化镁晶须.采用负离子配位多面体生长基元理论可以有效地解释氢氧化镁晶须的生成.     

pH值对Mg2(OH)2CO3·3H2O晶须生长机制的影响

研究了pH值对Mg2 (OH) 2CO3·3H2O晶须生长过程的影响.发现在较低的pH值下Mg2(OH)2CO3·3H2O易于形成空心管状的晶须,而在较高的pH值下则易形成层板状的晶须.结合拉曼光谱,利用负离子配位多面体生长基元模型分析了管状Mg2 (OH) 2CO3·3H2O晶须生长过程.     

纳米晶粒取向连生与枝蔓晶的形成

本文研究了在水热条件下ZnO、BaTiO3、La2/3TiO3和Fe2O3纳米晶粒的取向连生和枝蔓晶的形成.用负离子配位多面体生长基元理论模型讨论了纳米晶粒的取向连生和晶粒相连的枝蔓晶,其枝蔓晶的形成与通常枝蔓晶的形成机理是一致的,都是沿着晶体中负离子配位多面体相互联结的稳定方向,为晶体生长速率最快方向,其分布的对称性与晶体结构的对称性是对应一致的.     

高温体系合成六方片状氢氧化镁晶体生长机理的研究

采用不同镁盐溶液在120℃下,水热法一步合成六方片状氢氧化镁.利用扫描电镜(SEM)、X射线衍射(XRD)和激光粒度分布仪对产品进行表征.并采用Materials Studio软件对氢氧化镁晶胞结构进行了模拟,同时计算出晶体结构参数和各面族的表面能.根据负离子配位多面体理论解释了氢氧化镁晶体的形成机理,通过生长基元的形成和生长基元在各面族的叠合过程来解释了六方片形貌的形成过程.     

六钛酸钾晶须的制备及生长机理的研究

通过KDC方法成功制备了六钛酸钾(K2Ti6O13)晶须,并进行了热重分析和差热分析,研究烧结时间和烧结温度对K2Ti6O13晶须结晶过程的影响,通过X射线衍射分析了K2Ti6O13晶须的相组成和晶体指数.此外,通过扫描电子显微镜和透射电子显微镜研究晶须的微观结构,揭示了K2Ti6O13晶须的生长机理.     

A Method of Determining the Liquid Phase Epitaxial GaAs Growth Mechanism Based on Growth Rate Measurements

It has been proved that the dependence of the growth rate V of a LPE GaAs layer on the relative supersaturation σ of the solution at the interphase boundary can be determined on the basis of growth rate measurements of this layer in the case when crystallization is controlled by the kinetics of surface processes. The relation V = f(σ) obtained for homoepitaxial GaAs layers grown at different solution cooling rates are compared with the theoretical relations derived by BRICE making use of a single growth mechanism assumption. Based on the above and by use of the experimental data of MUSZYńSKI the growth mechanism of homoepitaxial GaAs layers on a substrate oriented in the [100] direction is determined. The results are in accordance with the crystallization model of A^IIIB^V semiconductor compounds from the liquid phase proposed by FAUST and JOHN .     

氮化镓单晶的液相生长

氮化镓(GaN)具有高击穿场强、高饱和电子漂移速率、抗辐射能力强和良好的化学稳定性等优良特性,是制作宽波谱、高功率、高效率光电子、电力电子和微电子的理想衬底材料。除气相法(包括HVPE(氢化物气相外延)、MOCVD(金属有机化合物化学气相沉淀)、MBE(分子束外延))生长GaN单晶外,液相法(包括氨热法和助熔剂法)近几年在制备GaN单晶方面取得了较大的进展。本文介绍了氨热法和助熔剂法的生长原理、装备特点及生长习性;综述了两种液相生长方法的研究历程及研究进展,并对液相法生长GaN单晶的发展趋势及主要挑战进行了展望。     

Some Phase Boundary Region Correlations in the Liquid Phase Epitaxy Growth Process

In the present work the behavior of n-component liquid phase during the liquid phase epitaxial growth process is considered. As it follows from these considerations, in the liquid phase epitaxy growth one must distinguish two types of components - with a positive concentration gradient and with negative concentration gradient. A possible mechanism for deposition of the components having a negative concentration gradients, for which, in general, the liquid phase is superheated, is presented.     

升温重结晶过程中硫酸钙晶须的形貌控制及其生长机理

利用升温重结晶过程制备硫酸钙晶须,考察了溶液pH值、升温区间、振荡速率等操作条件对晶须生成及形貌的影响,并初步探索了十六烷基三甲基溴化铵(CTAB)、十二烷基硫酸钠(SDS)、聚乙二醇(PEG6000)和乙二胺(EDA)四种表面活性剂对晶须形貌的影响.结果表明:在升温重结晶反应体系中,各操作条件均可对晶须产物的形貌和尺寸产生影响,但pH和升温区间的影响最大;SDS会显著抑制晶核形成,质量浓度为7 g/L时生成的产物形貌为均一棒状,结晶度较高.硫酸钙晶须主要以层状形貌结构生长,少部分晶须呈现类似多晶和外延生长的形貌.     

Growth and Characterization of GaP Substrates for Liquid Phase Epitaxy

GaP light-emitting diodes were prepared by a single LPE process on LEC and SSD substrates. Red LEDs with a maximal efficiency of 5% could be grown reproducibly on SSD substrates with grains. The effciency of the best LEDs on substrates grown by the conventional LEC method is essentially lower (0.5%) but it can be improved considerably by a modification of the growth conditions. The substrates were characterized by structural, chemical, electrical and optical measurements and the observed differences in the luminescence efficiency between the LEDs grown on LEC and SSD subtrates, respectively, were discussed under consideration of these investigations.     

Phase Diagram and Dielectric Studies in Hydrogen-Bonded Liquid Crystal System

The thermal and dielectric behaviors of mixtures were investigated for systems of p-n-hexyloxybenzoic acid (6OBA) and p-n-octyloxybenzoic acid (8OBA) by differential scanning calorimetry, polarized optical microscopy, and dielectric measurements. The T-X phase diagram was obtained for this system. Eutectic composition was calculated and received experimentally. Enthalpies of mixing were calculated to describe phase transitions physically. All mixtures show enantiotropic smectic and nematic phases. Dielectric permittivity has higher value for the mixture with fractional proportion of 30 to 70% mol for 8OBA than that for initial acid. It is assumed that co-crystallization of initial compound occurs when the ratio of components is close to equimolar ratio.