Angular Momentum in the Formation of Disk Galaxies

Within the current framework of disk galaxy formation, we discuss the resulted surface-density profiles according to the theoretical angular momentum distributions (AMDs) presented by Bullock et al. [Astrophys. J.555 (2001) 240(B01)] for the ACDM cosmology in both spherical and cylindric coordinates. It is found that the derived surface density distribution of a disk in the outer region is in general similar to an exponential disk for both the theoretical AMDs. In the central region, the results from both the theoretical AMDs are inconsistent with observations whatever the disk bar-instability is taken into account or not. The cylindric form of the theoretical AMD leads to the bar-instability more easily for a give galaxy than that for spherical AMD, which could result in a more massive bulge. After comparing the model predictions with our Milky Way galaxy, we find that the theoretical AMDs predict larger mass fractions of baryons with low angular momentum than the observed ones, which would lead to the disk sizes to be smaller. Two possible processes which could solve the angular momentum problem are discussed.     

A study of the ground states of CaC2H2+,CaC2D2+ and CaC2H4+

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Determination of Nonlinear Optical Coefficients of KBe2BO3F2 Crystals

Considering that KBe2BO3F2(KBBF) is an outstanding deep ultraviolet crystal which can generate the shortest wavelengths in second harmonic generation and sum-frequency generation,we report the determination of the nonlinear optical coefficients of the KBBF crystal.The d11 coefficient was determined to be 0.49pm/V by the Maker fringes method at the wavelength 1064nm,which is in agreement well with the theoretical value.     

Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

Tl2Ba2CaCu2Ox(Tl-2212) thin films were prepared by the two-step technique.A precursor film was first prepared by the pulsed laser deposition method,and then experienced the incorporation of thalliation in a one-step or two-step annealing process.The experimental results show that the two-step annealing process produces dense and smooth films,and that the one-step annealing process produces a high critical temperature film of 101K,but the transition width is wide.Precursor films with homogeneous Ba2Ca1.3Cu2.1Ox composition are essential for producing high-quality Tl-2212 films.     

Flat Currents of Green-Schwarz Superstring in AdS2 × S2 Background

From the κ symmetric action of ⅡB string in AdS2 × S2 background given by Zhou, we derive the equations of motion. By using the twisted dual transformation which was introduced by Hou, we construct the flat currents, conserving non-local charge with one free parameter, for the superstring in AdS2 × S2.     

Effect of Precursor Molar Ratio of [S^2-]/[Zn^2＋] on Particle Size and Photoluminescence of ZnS：Mn^2＋ Nanocrystals

We investigate the influence of precursor molar ratio of [S^2-]/[Zn^2＋] on particle size and photoluminescence （PL） of ZnS：Mn^2＋ nanocrystMs. By changing the [S^2-]/[Zn^2＋] ratio from 0.6 （Zn-rich） to 2.0 （S-rich）, the particle size increases from nearly 2. 7nm to about 4.Ohm. The increase in the ratio of [S^2-]/[Zn^2＋] cadses a decrease of PL emission intensity of ZnS host while a distinct increase of Mn^2＋ emission. The maximum intensity for the luminescence of Mn^2＋ emission is observed at the ratio of [S^2-]/[Zn^2＋] ≈ 1.5. The possible mechanism for the results is discussed by filling of S^2- vacancies and the increase of Mn^2＋ ions incorporated into ZnS lattices.     

Luminescence and Energy Transfer of Eu^2＋, Mn^2＋ in SrZnP2O7

The SrZnP2OT：Eu^2＋, Mn^2＋ phosphor is synthesized by high temperature solid state reaction. The luminescence properties and the energy transfer between Eu^2＋ and Mn^2＋ are investigated. The emission bands of this phosphor peaked at 42Ohm and 67Ohm are originated from the 5d → 4f transition of Eu^2＋ and from the 4T1 （4G） --〉 6A1 （6S） transit/on of Mn^2＋, respectively. With the increasing Mn^2＋ concentration, the intensity of fixed concentra- tion Eu^2＋ decreases and the intensity of Mn^2＋ also increases. It is suggested that there is an energy transfer from Eu^2＋ to Mn^2＋ in SrZnP2O7 host. According to Dexter＇s energy transfer formula of multipolar interaction, the energy transfer between Eu^2＋ and Mn^2＋ is due to the electric dipole-quadrupole interaction of the resonance transfer.     

Ultraviolet photovoltaic characteristic of MgB2 thin film

Fast photoelectric effects have been observed in MgB₂ thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was \sim185\,ns for the photovoltaic pulse when the film was irradiated by a 308\,nm laser pulse of 25\,ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB₂ film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.     

First-Principles Study of Electronic Structure of the Laves Phase ZrFe2

We perform the ab initio calculation for obtaining the density of states and magnetic properties of ZrFe2 Laves phase compound based on the method of augmented plane waves plus local orbital The results indicate that the ferromagnetic state is more stable than the paramagnetic one, but with a slightly larger volume. The 3d - 4d exchange interactions between Fe and Zr electrons lead to the antiparallel coupling for Fe 3d and Zr 4d states, which is responsible for the ferrimagnetic ordering of the compound. The resulting magnetic moment of about 1.98μB for Fe is spatially localized near the Fe site, while around Zr a small but extended negative spin states causes a moment of about -0.44 μB. Moreover, the resulting magnetic moments with the generalized gradient approximation are more consistent with experimental values than that of the local-spin density approximation.     

Effect of Process Parameters on Laser Damage Threshold of TiO2 Coatings

We investigate the laser damage behaviour of an electron-beam-deposited TiO2 monolayer at different process parameters. The optical properties, chemical composition, surface defects, absorption and laser-induced damage threshold （LIDT） of films are measured. It is found that TiO2 films with the minimum absorption and the highest LIDT can be fabricated using a TiO2 starting material after annealing. LIDT is mainly related to absorption and is influenced by the non-stoichiometric defects for TiO2 films. Surface defects show no evident effects on LIDT in this experiment.     

Comparison of TiO2 and ZrO2 Films Deposited by Electron-Beam Evaporation and by Sol-Gel Process

TiO2 and ZrO2 films are deposited by electron-beam （EB） evaporation and by sol-gel process. The film properties are characterized by visible and Fourier-transform infrared spectrometry, x-ray diffraction analysis, surface roughness measure, absorption and laser-induced damage threshold （LIDT） test. It is found that the sol-gel films have lower refractive index, packing density and roughness than EB deposited films due to their amorphous structure and high OH group concentration in the film. The high LIDT of sol-gel films is mainly due to their amorphous and porous structure, and low absorption. LIDT of EB deposited film is considerably affected by defects in the film, and LIDT of sol-gel deposited film is mainly effected by residual organic impurities and solvent trapped in the film.     

窄线SeyfertⅠ型星系

本文将概述窄线SeyfertⅠ型星系 (包括具有类似性质但光度较大的类星体 )的主要观测特征、物理内涵及其理论解释和在活动星系核内部结构上的反映。窄线SeyfertⅠ型星系 (NLS1 ,以后NLS1都认为包括NLSI星系和NLS1类星体 )具有窄的允许线Hβ,它兼有Sy1和Sy2的某些特征。它具有强的FeⅡ光学线和弱的 [OⅢ ]λ5 0 0 7禁线 ,这明显不同于Sy2。在观测相关量的主成分统计分析中表明NLS1是活动星系核第一主向量表现为极端的一类。这包括 :( 1 )HβFWHM取极小 ;( 2 )FeⅡλ45 70 /Hβ 取极大 ;( 3)SⅢ ]λ1 892 /CⅢ ]λ1 90 9取极大 ,亦一定范围内宽线区电子密度取大值 ;( 4 )CⅣλ1 5 4 9线中心蓝移取极大 ;( 5 )高光度NLS1的软X射线光子数谱指数Γx 取极大 ;( 6)X射线相对流量变化方差最大等。基于以上观测结构和相应统计规律 (观测量与HβFWHM的关系 ) ,解释NLS1现象最佳的模型是高相对吸积率L/LEdd模型。NLS1比之典型宽线活动星系核具有较低的中心黑洞质量MBH。进一步 ,还发现这一模型是活动星系核主...     

Study of refractive index and thickness of TiO2／ormosil planar waveguide

Hybrid titania/ormosil waveguide films have been prepared by sol-gel method at low thermal treatment temperature of 150℃. The influence of processing parameters including the molar ratios of Ti(OBu)_{4}/glycidoxypropyltrimethoxysilane (GLYMO) and H_{2}O/Ti(OBu)_{4} (expressed as R), especially aging of sol, on the refractive index and thickness of film was investigated. The optical properties of films were measured with Scanning Electron Microscope and m-line spectroscopy. The results indicate that the film thickness increases with the aging time of sol, but the variation of refractive index as a function of aging time of sol depends on the relative ratio of GLYMO to Ti-alkoxide. The relation between film thickness and corresponding sol viscosity is linear as the volume of GLYMO is 80% within the range of measured data.     

Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films

Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous －Te－-Te－ stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb－Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb－Sb (Te_2) and (Sb_2) Sb－Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb－Sb (Te_2).     

Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Access Memory

Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.     

星系相撞之时

在与许多小星系的碰撞过程中,大星系往往会借此机会进一步发展壮大,位于星系中心的超大质量黑洞在相遇后会相互围绕对方盘旋,形成双星系系统。在没有外力阻碍时,它们将继续相互盘旋至少数百万年。然而每个大星系核心都有一个黑洞,所以其他天体物理学过程必定使这对黑洞更快地融为一体。图1模拟的星系相撞、结合过程(1Gyr=10亿年)图2迈尔(L.Mayer)等人的流体力学模拟(图1)表明,正在结合的星系中的气体使黑洞速度趋缓,以致它们捆绑在一起的时间只有100万年。模拟中,内有双黑洞系统的富含气体的星系,由最近结合的两个螺旋星系组成,两个黑洞的…