Laser spectrum of a high power Tm,Ho:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 18.8 W continuous wave and 18.4 W Q-switched diode-pumped cryogenic Tm(5 at %), Ho(0.5 at %):GdVO₄ laser. The pumping source of Tm, Ho:GdVO₄ laser is a fiber-coupled laser diode with fiber core diameter of 0.4 mm, supplying 42 W power at 802.5 nm. For input pump power of 41.9 W at 802.4 nm, the output power of 18.8 W in CW operation, optical-to-optical conversion efficiency of 45% at 2.05 μm and the average output power of 18.4 W in Q-switched operation, optical-to-optical conversion efficiency of 44% at 2.04 and 2.05 μm have been attained. The emission wavelengths of the Tm(5 at %), Ho(0.5 at %):GdVO₄ laser were firstly compared when it worked in CW mode and Q-switched mode.     

Single-longitudinal-mode lasing of Tm,Ho:GdVO<Subscript>4</Subscript> using a filter of Fabry-Perot etalon and volume Bragg grating

In this letter, we report a diodepumped CW Tm, Ho:GdVO₄ laser at 77 K with a volume Bragg grating (VBG) instead of the conventional mirror. Inserting a Fabry-Perot etalon into the cavity, a singlelon-gitudinal-mode of Tm, Ho:GdVO₄ laser which I s operating at 2038.387 nm with output power 64 mW is obtained. The slope efficiency of 4.68% and a narrow linewidth about 45 pm FWHM are achieved. And appropriate cavity length is about 75 ± 5 mm.     

A single-longitudinal-mode CW 0.25 mm Tm,Ho:GdVO<Subscript>4</Subscript> Microchip Laser

A single-longitudinal-mode of 0.25 mm Tm,Ho:GdVO₄ Microchip Laser was reported. The maximal continuous wave (CW) output power was 26.4 mW and the threshold of 118 mW. The Tm,Ho:GdVO₄ Microchip Laser output wavelength was centered at 2039.7598 nm with bandwidth of about 57.1 pm. The beam quality factor was M ² ∼ 1.52 ± 0.03 measured by knife-edge method. The Longitudinal-Mode was scanned by a FPI and the transverse mode was monitored by an infrared vidicon camera.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

A high efficiency Ho:YAlO<Subscript>3</Subscript> laser pumped by Tm:YLF laser with a Volume Bragg Grating

We report a CW Ho:YAlO₃ (Ho:YAP) laser at room temperature pumped by a Tm:YLF laser with a Volume Bragg Grating (VBG) instead of the conventional mirror. The Ho:YAP laser operated at 2117.9 nm with output power 9.12 W. The optical-to-optical conversion efficiency is 60.4% and slope efficiency is 71.2%. The Ho:YAP output wavelength is centered at 2117.9 nm with bandwidth of about 1 nm. The beam quality factor is M ² ∼ 1.29 measured by the traveling knife-edge method.     

All-solid-state CW Nd:GdVO<Subscript>4</Subscript>-LBO red laser under direct 912 nm pumping

We report a red laser at 670.5 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1341 nm Nd:GdVO₄ laser under in-band diode pumping at 912 nm. An LBO crystal, cut for critical type I phase matching is used for second harmonic generation of the laser. At an incident pump power of 8.9 W, as high as 347 mW of CW output power at 670.5 nm is achieved. The fluctuation of the red output power was better than 3.7% in the given 30 min, and the beam quality factor M ² is 1.65.     

Research of Tm (5.5 at %), Ho (0.55 at %):GdVO<Subscript>4</Subscript> laser pumped by diode laser at 800 nm

In this paper, we report a Tm (5.5 at %), Ho (0.55 at %):GdVO₄ laser pumped by diode laser at 800 nm. To our best knowledge, it is the first time that the use of Tm (5.5 at %), Ho (0.55 at %):GdVO₄ crystal among the similar experiments. We observed the influences of LD working temperature i.e. pump wavelength to 2 μm laser conversion efficiency. In the conditions of the continuous wave and 10 kHz acousto-optic Q-switch, high efficiency output of 2.05 μm laser was obtained. With the maximum pump power of 34.6, 13.9, and 13.6 W at 2.05 μm laser output was achieved respectively. Single laser pulse width was 25.6 ns in 10 kHz acousto-optic Q-switched condition.     

High efficiency 2.05-μm CW and AO Q-switched operation of diode end-pumped Tm,Ho:GdVO4 laser

The continuous-wave (CW) and acoustooptically (AO) Q-switched operation of a Tm (4 at %), Ho (0.4 at %):GdVO₄ laser at a 2.05-μm wavelength were reported in this paper. The Tm,Ho:GdVO₄ crystal was cooled by liquid nitrogen and end pumped by a 29.8-W fiber-coupled laser diode at 801 nm. A conversion efficiency of 41% and a slope efficiency of 46% were acquired with a continuous-wave output power of 12.2 W. An average power of 11.6 W was obtained at a pulse repetition frequency (PRF) of 10 kHz, corresponding to an optical-to-optical conversion efficiency of 38.9% and a slope efficiency of 41.4%. The energy per pulse of 1.8 mJ in 14 ns was achieved at 5 kHz with a peak power of 130 kW.     

Amplification of a <Emphasis Type="Italic">Q</Emphasis>-Switched Ho:GdVO<Subscript>4</Subscript> Oscillator in Thulium-Doped Large-Mode-Area Fiber

We report a high peak power, narrow linewidth, stable pulsed Ho:GdVO₄ amplifier based on thuliumdoped fiber, which produces 6.65 W average output power at 2,048 nm and 56.8 kW peak power with 11.7 ns pulse width at 10 kHz repetition rate. We use a simple Q-switched Ho:GdVO₄ laser as a seed laser and a thulium-doped fiber pumped by a 792 nm laser diode as an amplifier. The fiber amplifier provided 6.5 dB gain to the input signal. The spectral linewidth of the Ho:GdVO₄ amplifier remains < 0.5 nm with an M² beam quality of 1.36.     

Efficient CW Nd:GdVO<Subscript>4</Subscript>-BiBO deep-blue laser at 456 nm under direct 888 nm diode laser pumping

We report an efficient laser emission on the 912 nm ⁴ F _3/2 to ⁴ I _9/2 transition in Nd:GdVO₄ under the pump with diode lasers at 888 nm. Continuous wave (CW) 4.91 W output power at 912 nm is obtained under 18.3 W of incident pump power; the slope efficiency with respect to the incident pump power was 57.5%. Moreover, intracavity frequency doubling with BiB₃O₆ (BiBO) nonlinear crystal yielded 1.33 W of deep-blue light at 456 nm.     

Thermal focal length measurement of an LD-end-pumped Tm,Ho:GdVO4 laser

The thermal focal length of a Tm,Ho:GdVO₄ crystal was measured in this paper. The pump laser was 25.73 W, and the thermal focal length was 692.6 mm; based on the thermal focal length of a Tm,Ho:GdVO₄ crystal, a single end-pump continuous wave (CW) operation of Tm,Ho:GdVO₄ laser was designed to demonstrate the effect of thermal focal length, and a 0.26-W output power was high in considering the thermal focal length than in unconsidering the thermal focal length with a 26.1-W pump power.     

All solid-state CW Nd:GdVO<Subscript>4</Subscript>-GdCOB laser at 670 nm

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An GdCa₄O(BO₃)₃ (GdCOB) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.2 W, as high as 1.32 W of continuous wave (CW) output power at 670 nm is achieved with 15-mm-long GdCOB. The optical-to-optical conversion efficiency is up to 7.3%, and the fluctuation of the red output power was better than 3.5% in the given 30 min.     

High-power,high-quality ZGP OPO pumped by a Tm,Ho:GdVO<Subscript>4</Subscript> laser

We report a ZGP OPO system capable of producing >6 W at a signal wavelength of 3.80 μm and an idler wavelength of 4.45 μm. The pumping source is the Tm,Ho:GdVO₄ laser operated at 2.049 μm with an M ² of 1.07. The ZGP OPO generated a total combined output power of 6.1 W at signal wavelength and idler wavelength under pumping power of 18.3 W, and an M ² of 1.7 for OPO output was obtained.     

8.30 μm singly resonant ZnGeP2 optical parametric oscillators pumped by a Tm,Ho:GdVO4 laser

A single resonator 8.30 μm ZnGeP₂ (ZGP) optical parametric oscillators (OPO) was reported in the paper. The OPO was pumped by a 10.2-W Tm,Ho:GdVO₄ laser at 8 kHz in a Q-switch mode, a 170-mW idler was obtained at 8.30 μm, and the output power of the idler and signal wave was 1.0 W, corresponding to an optical-optical conversion efficiency of 10.3% and a slope efficiency of 20.9%. Tm,Ho:GdVO₄ laser was pumped by a 30-W fiber-coupled laser diode (LD) at the center wavelength of 801 nm. The output wavelength of Tm,Ho:GdVO₄ laser was at 2.05 μm, and the energy per pulse of 1.28 mJ in 18 ns was achieved at 8 kHz with the peak power of 71.1 kW.     

High-power and efficiency continuous-wave operation of <Emphasis Type="Italic">a</Emphasis>-cut Ho:YAP laser at room temperature

We report the continuous-wave (CW) operation of a room-temperature a-cut Ho:YAP laser resonantly end-pumped by a diode-pumped Tm:YLF laser at 1.91 μm. A maximum CW output power of 14.6 W at 2118.7 nm for a-oriented Ho:YAP was obtained, corresponding to the slope efficiency of 69.35% and optical-to-optical conversion efficiency of 63.04% with respect to absorbed pump power. The laser operated at a single mode (TEM₀₀) with the beam quality factor of M ² ∼ 1.51.     

A comparative study on diode-pumped single-frequency Tm:YAG and Tm:GdVO<Subscript>4</Subscript> lasers

In this paper, we present experimental results concerning on the laser characteristics of Tm:YAG laser and Tm: GdVO₄ laser. At room temperature, the maximum output power of Tm:YAG laser and Tm:GdVO₄ laser is 210 and 145 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:GdVO₄ laser, Tm:YAG laser can operate on single frequency with high power easily. As much as 60 mW of 2013.9 nm single-longitudinal-mode (SLM) laser was achieved for Tm:YAG laser. For Tm:GdVO₄ laser 51 mW of 1919.7 nm SLM laser was achieved. The SLM Tm:YAG laser is better for using as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Diode-pumped Tm:GdVO<Subscript>4</Subscript> lasers with double etalons

Diode end-pumped single-frequency Tm:GdVO₄ laser at room temperature was reported. The maximal output power of single-frequency is as high as 51 mW by using two uncoated fused YAG etalons, which are respectively 0.05 mm thick and 1 mm thick. We obtained the single frequency Tm:GdVO₄ laser at 1919.7 nm. The slope efficiency is 1.4%. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Dual-Wavelength and Passively Q-Switched Nd :GdVO4 Lasers Operated at 1.34 μm Under 880 nm Diode Pumping

We report continuous-wave (CW) and passively Q-switched Nd :GdVO₄ lasers on ⁴F_3/2 → ⁴I_13/2 transition directly pumped by an 880 nm diode laser. A widely investigated Nd :GdVO₄ laser at about 1341 nm is operated with a maximum output power of 5.23 W and a slope efficiency of about 30.6%. Using an etalon for wavelength selection, we realize laser emission at about 1344 nm, for the first time to our knowledge, in a Nd :GdVO₄ laser, with a maximum output power of 4.19 W and a slope efficiency of 20.1%. Moreover, we achieve simultaneous dual-wavelength lasing at 1341 and 1344 nm with a maximum output power of 2.27 W and a slope efficiency of 13.5%, respectively. Using V³⁺ :YAG as a saturable absorber, stable Q switching is obtained at about 1341 nm with a maximum average output power of 1.15 W. The pulse width is 52.8 ns at a repetition rate of 279.8 kHz.

     

Q-switched Ho:YAlO<Subscript>3</Subscript> laser pumped by Tm:YLF laser at room temperature

A Q-switched high efficient Ho:YAlO₃ (Ho:YAP) laser pumped by a diode-pumped Tm:YLF laser at room-temperature is realized. The maximum output energy reaches 1.58 mJ under the repetition frequency of 5 kHz, when the incident pump power is 15.6 W. The pulse width is 22 ns. The wavelength is 2118 nm when the transmission of output coupler is 30%. The beam quality factor is M ² ∼ 1.39 measured by the traveling knife-edge method.     

490-nm generation by sum-frequency mixing of diode pumped Nd:GdVO<Subscript>4</Subscript>-Nd:YLF lasers

We report a continuous-wave (CW) blue laser emission by sum-frequency mixing in Nd:GdVO₄ and Nd:YLF crystals. Using type-I critical phase-matching (CPM) LBO crystal, a blue laser at 490 nm is obtained by 1063 and 908 nm intracavity sum-frequency mixing. The maximum laser output power of 118 mW is obtained when an incident pump laser of 18.2 W is used. At the output power level of 118 mW, the output stability is better than 4.2%.