溶胶-凝胶法制备GaInP/GaAs/Ge三结太阳能电池梯度折射率减反膜

为了减少太阳能电池表面反射,提高多结太阳能电池效率,针对GaInP/GaAs/Ge三结太阳能电池和AM0光谱,设计了折射率梯度排列的四层减反膜系结构.利用溶胶-凝胶技术,通过对材料折射率的定向调节,制备了折射率梯度排列的TiO_2/ZrO_2/酸性SiO_2/碱性SiO_2四层减反膜.实验结果表明,镀膜后的三结太阳能电池在300~1 700 nm波长范围内的加权平均反射率由原先的28.58%降低至4.86%,最高反射率由46.35%降低至15.45%.     

折射率随膜层厚度而变化的非均匀干涉膜层

具有折射率梯度的光学玻璃表面上的非均匀透明膜,可用于干涉镀层的消色差。关于非均匀膜的问题,有许多理论性的文献都已基本上阐述过。当基底与膜层间的界面上第一层有非均匀的折射率时,双层透光膜层上具有低剩余反射的光谱区扩大,这样,实际上要使用非均匀膜。具有高折射率的材料要求透光以及折射率有大的差别,要降低两胶合零件界面的反射时,采用具有折率梯度的镀层。现在已研究出在真空中,用蒸发法改变折射率给定形状的镀层工艺。本文介绍具有非均匀膜的玻璃表面光谱反射的计算,非均匀膜的折射率按接近玻璃     

质子辐照下Mo/Si多层膜反射镜的微观结构状态

利用透射电子显微镜对质子辐照前后空间太阳望远镜Mo/Si多层膜的微观结构进行了表征, 并对其辐照前后反射率的变化进行了测量.研究表明, Mo/Si多层膜经质子辐照后形成了一些缺陷结构,局部区域Mo/Si的周期性遭到破坏, Mo层与Si层的宽度发生了变化,多层膜层与层之间的界面也比辐照前更为粗糙,部分层状结构由于质子辐照发生了明显的扭曲和折断等现象;此外,质子辐照导致了Mo/Si多层膜反射率的下降,这些微观缺陷的形成是光学性能降低的直接诱因. 关键词： 空间太阳望远镜 Mo/Si多层膜 微观结构 反射率     

磁控溅射制备横向梯度分布的Mo/Si周期多层膜

 采用磁控溅射方法在Si基板上镀制了横向梯度分布的Mo/Si周期多层膜。以X射线掠入射反射测量了横向梯度多层膜的膜系结构,在基板65 mm长度范围内,多层膜周期从8.21 nm线性减小到6.57 nm,周期梯度为0.03 nm/mm。国家同步辐射实验室反射率计的反射率测试结果表明：该横向梯度分布周期多层膜上不同位置,能反射在13.3~15.9 nm波段范围内不同波长的极紫外光,反射率为60%~65%。     

非尖锐界面多层膜对软X光衍射研究

本文研究超薄膜情况下,提出一个新物理模型,研究膜系内密度呈周期性连续变化时X射线正入射衍射强度理论计算,并由此得到水窗波段超薄膜设计参数,与用光学常数得到的参数非常一致。理论上推出一个质量密度呈余弦变化的多层膜仍然有高的软X光反射率。     

入射光单色性与界面粗糙度对多层膜反射性能的不同影响

多层膜界面粗糙度、入射光单色性对软X射线多层膜实际反射率均有影响。利用数学卷积积分,理论上推导出一个在入射光不同单色性下精确计算多层膜反射率的公式。利用给出的理论计算公式,简要分析了入射光不同单色性、不同界面粗糙度对Mo/Si多层膜反射率的影响。理论分析发现这两种因素对Mo/Si多层膜反射率影响完全不同:入射光低的单色性不但极大降低Mo/Si多层膜峰值反射率,而且使反射曲线的半峰全宽增加;而界面粗糙度是降低Mo/Si多层膜反射曲线上各点对应值,基本不改变Mo/Si反射曲线的半峰全宽,不改变反射曲线的形状。说明这两个因素在软X射线的长波段对多层膜反射性能的影响不同。     

磁控溅射法制备极紫外6.8～11.0nm波段Mo/B_4C横向梯度多层膜（英文）

用直流磁控溅射法结合掩模板控制膜厚的方法在Si衬底上制备了工作于6.8～11.0nm波段的[Mo/B_4C]60横向梯度多层膜。利用X射线掠入射反射测试以及同步辐射反射率测试对梯度多层膜的结构及性能进行了测试。X射线掠入射反射测试结果表明,多层膜周期厚度沿着长轴方向从4.39nm逐渐增加到7.82nm,周期厚度平均梯度为0.054nm/mm。对横向梯度多层膜沿长轴方向每隔5mm进行了一次同步辐射反射率测试,结果显示,横向梯度多层膜在45°入射角下的反射率约为10%,反射峰的半高全宽介于0.13nm到0.31nm之间。     

软X射线Mo/Si多层膜反射率拟合分析

由于多层膜的表界面粗糙度和材料之间的相互扩散等因素，导致多层膜的实际反射率小于理论计算的反射率，因此，多层膜结构参量的确定对镀膜工艺参量的标定具有重要意义。由于描述单个非理想粗糙界面散射的Stearns法适用于软X射线短波段区域，采用它的数学模型来描述软X射线多层膜的粗糙度，利用最小二乘法曲线拟合法对同步辐射测得的Mo／Si多层膜的反射率曲线进行拟合，得到了非常好的拟合结果，从而确定了多层膜结构参量，同时分析了多层膜周期厚度，厚度比率，界面宽度以及仪器光谱分辨率对多层膜反射特性的影响，这些工作都为镀膜工艺改进提供了一定的理论依据。     

余弦高斯光束在梯度折射率介质中的传输特性

 为了研究光束在梯度折射率介质中的传输规律,利用广义惠更斯-菲涅耳衍射积分法,推导出余弦高斯光束在梯度折射率介质中传输的解析表达式,对余弦高斯光束在梯度折射率介质中的传输特性进行了分析,并进一步讨论了介质梯度折射率系数和调制参数对传输特性的影响。结果表明,余弦高斯光束在梯度折射率介质中传输时,轴上光强分布呈现周期性变化,横向光强分布受梯度折射率系数和调制参数影响较大。余弦高斯光束传输时具有不稳定性,通过适当调节参数,可在空间某位置实现余弦高斯光束的整形。     

磁控溅射法制备极紫外6.8~11.0 nm波段Mo/B4C横向梯度多层膜

用直流磁控溅射法结合掩模板控制膜厚的方法在Si衬底上制备了工作于6.8~11.0 nm波段的[Mo/B₄C]₆₀横向梯度多层膜。利用X射线掠入射反射测试以及同步辐射反射率测试对梯度多层膜的结构及性能进行了测试。X射线掠入射反射测试结果表明,多层膜周期厚度沿着长轴方向从4.39 nm逐渐增加到7.82 nm,周期厚度平均梯度为0.054 nm/mm。对横向梯度多层膜沿长轴方向每隔5 mm进行了一次同步辐射反射率测试,结果显示,横向梯度多层膜在45°入射角下的反射率约为10%,反射峰的半高全宽介于0.13 nm到0.31 nm之间。     

Interface roughness, surface roughness and soft X-ray reflectivity of Mo/Si multilayers with different layer number

A series of Mo/Si multilayers with the same periodic length and different periodic number were prepared by magnetron sputtering, whose top layers were respectively Mo layer and Si layer. Periodic length and interface roughness of Mo/Si multilayers were determined by small angle X-ray diffraction (SAXRD).Surface roughness change curve of Mo/Si multilayer with increasing layer number was studied by atomic force microscope (AFM). Soft X-ray reflectivity of Mo/Si multilayers was measured in National Synchrotron Radiation Laboratory (NSRL). Theoretical and experimental results show that the soft X-ray reflectivity of Mo/Si multilayer is mainly determined by periodic number and interface roughness, surface roughness has little effect on reflectivity.     

Langmuir-Blodgett Films with Bilayer Alternation of Hemicyanine Dye and Cadmium Stearate

Multilayers consisting of bilayer alternation of hemicyanine dye and cadmium stearate have been prepared by the Langmuir-Blodgett technique. x-ray diffraction and optical absorption spectra are used to characterize their periodic structures and optical properties. The results show that a well ordered supperlattic is produced and the hemicyanine dye is in non-aggregated formation in the alternating multilayers.     

Influence of interface roughness on reflectivity of tungsten/boron-carbide multilayers with variable bi-layer number by X-ray reflection and diffuse scattering

Infuence of interface roughness on the reflectivity of Tungsten/boron-carbide （W/B4C） multilayers varying with bi-layer number, N, is investigated. For W/B4C multilayers with the same design period thickness of 2.5 nm, a real-structure model is used to calculate the variation of reflectivities with N = 50, 100, 150, and 200, respectively. Then, these multilayers are fabricated by a direct current （DC） magnetron sputtering system. Their reflectivity and scattering intensity are measured by an X-ray diffractometer （XRD） working at Cu Kα line. The X-ray reflectivity measurement indicates that the reflectivity is a function of its bi-layer number. The X-ray scattering measured results show that the interface roughness of W/B4C multilayers increases slightly from layer to layer during multilayer growing. The variation of the reflectivity and interface roughness with bi-layer number is accurately explained by the presented realstructure model.     

Development of Al-based multilayer optics for EUV

We report on the development of multilayer optics for the extreme ultra-violet (EUV) range. The optical performance of Al-based multilayer mirrors is discussed with regard to promising reflectivity and selectivity characteristics and the problems of the interfacial roughness for this type of multilayers. We demonstrate a possibility to reduce the average roughness by introducing additional metal layer (W or Mo) rather than depositing a buffer layer at each interface. We have prepared and tested Al/SiC, Al/W/SiC and Al/Mo/SiC multilayers of various periods for the spectral range from 15 to 40 nm, which is the range of increasing interest for high-order harmonic generation, synchrotron radiation and astrophysics. The structure of the three-component systems has been optimized in order to obtain the best reflectivity for each wavelength within the spectral range. We have shown that introduction of refractory metal in Al-based periodic stack can improve the optical performance of multilayer reflecting coatings designed for the EUV applications.     

Mo/Si软X射线多层膜的界面粗糙度研究

 用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo/Si多层膜系列, 利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo/Si多层膜的新鲜表面近似等同于同一多层膜的内界面，通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加，Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小，多层膜的峰值反射率先增加后减小。     

Studies of thin smectic C films by X-ray reflectivity

The smectic order in thin and ultra thin films (150–600Å) of the chiral ferroelectric liquid crystal mixture ZLI-3654 is studied using the X-ray reflectivity technique. The spin cast films on various substrates (float glass, Si wafer, polymer coated glass, etc.) order spontaneously with smectic layering parallel to the substrate surface. A simple model which assumes a sinusoidal density modulation can describe well the experimental reflectivity profiles. The X-ray reflectivity provides a method to evaluate the phases of the structure factor. We demonstrate, for the first time, that is possible to extract the molecular tilt angle, , in ferroelectric liquid crystals from X-ray reflectivity measurements of ultra thin films. The temperature dependence of the tilt angle in the smectic C^* phase are almost independent of the film thickness (down to 200 Å) and are similar to those in the bulk.     

基于遗传算法的30.4 nm多层膜设计

阐述了用遗传算法设计周期和非周期多层膜的原理和实现过程,完成了30.4 nm Mg/SiC周期和非周期多层膜设计,研究了遗传算法中不同种群数和多层膜膜厚取值范围对优化结果的影响.计算发现,种群数的恰当选取是使算法快速达到或逼近最优解的前提,膜厚取值范围的合理选择是提高算法效率的关键.设计得到入射角10°的周期多层膜和15°~22°范围内的宽角多层膜在波长30.4 nm处的反射率依次为56.57%与39.96±0.29%,5°入射的双功能多层膜在波长30.4 nm和58.4 nm处的反射率分别为54.1%和0.1%.结果表明遗传算法也是一种很好的多层膜设计方法.     

Thermal cycles, interface chemistry and optical performance of Mg/SiC multilayers

The interplay between optical performance and the thermally activated interface chemistry of periodic Mg/SiC multilayers designed for application at 30.4 nm are investigated by optical (hard X-ray, soft X-ray and ultraviolet ranges, i.e. from 0.154 to 30.4 nm) reflectivity and X-ray emission spectroscopy. The multilayers are prepared by magnetron sputtering and then annealed up to a temperature of 500 °C. Two clear changes take place in the multilayer upon annealing. At first, between 200 and 300 °C a strong decrease of the reflectivity is observed, due to the development of interfacial roughness following the crystallization of the Mg layers. No interfacial compound is detected. Then, between 350 and 400 °C there is formation of the Mg₂Si magnesium silicide at the interfaces following the reaction between the Mg and SiC layers. This also leads to the almost total loss of reflectivity of the multilayer. Thus, this kind of multilayer is thermally stable only for application requiring no heating above 200 °C.     

Interface characteristics of Mo/Si and B4C/Mo/Si multilayers using non-destructive X-ray techniques

A methodology combining non-destructive X-ray techniques is proposed to study the interfacial zones of periodic multilayers. The used X-ray techniques are X-ray emission spectroscopy induced by electrons and X-ray reflectivity in the hard and soft X-ray ranges. The first technique evidences the presence of compounds at the interfaces and gives an estimation of the thickness of the interfacial zone. These informations are used to constrain the fit of the X-ray reflectivity curves that enables to determine the thickness and roughness of the various layers of the stacks. The results are validated in the soft X-ray range where the reflectivity curves are very sensitive to the chemical state of the elements present in the stack. The methodology is applied to characterize Mo/Si (1-4 nm/2 nm) and B₄C/Mo/Si (1 nm/2 nm/2 nm) multilayers. It is shown that the two interfacial zones of the Mo/Si multilayers are composed of the silicides MoSi₂ and Mo₅Si₃. It is found that the interface thickness is about to be 0.4-0.8 nm depending on the samples. The molybdenum silicides are also evidenced at the interfaces of the B₄C/Mo/Si multilayers. However, their interface thickness is 0.2 nm thinner than that of the same stack without the B₄C layers, these layers being at the Mo-on-Si side or at the Si-on-Mo side. Thus, the B₄C layers do not stop but only reduce the interdiffusion between the Mo and Si layers.