DEA(TCNQ)2与TEA(TCNQ)2单晶上的STM热化学烧孔性能比较

利用STM隧道电流焦耳热诱导分解气化的热化学烧孔方法,对两种存储材料DEA(TCNQ)2和TEA(TCNQ)2的存储性能作了比较,DEA(TCNQ)2可以得到更高的存储密度、更大的信息孔深/孔径比,有更大的写入阈值电压.由此说明通过对存储材料的设计可以对存储系统的性能进行优化.     

电荷转移复合分子晶体TMPD·(TCNQ)2的电子能带结构及其与NMP·TCNQ和TTF·TCNQ的比较

本文对电荷转移复合分子晶体TMPD·(TCNQ)_2的电子能带进行了计算。在计算中将TMPD及TCNQ分别作为准一维分子柱来处理。所用计算方法为EHMO/LCAO-MO-CO方法。计算结果再次证实我们在前文给出的规律, 即分子晶体能带的位置由其孤立分子相应分子轨道能级的位置决定, 而能带宽度由相邻分子的相应分子轨道间的相互作用决定。本文还对该晶体的能带结构及其与室温电导率的关系进行了讨论, 并与NMP·TCNQ 和TTF·TCNQ晶体的进行比较。     

电荷转移复合分子晶体TMPD·(TCNQ)_2的电子能带结构及其与NMP·TCNQ和TTF·TCNQ的比较

本文对电荷转移复合分子晶体 TMPD·(TCNQ)_2 的电子能带进行了计算。在计算中将 TMPD 及 TCNQ 分别作为准一维分子柱来处理。所用计算方法为 EHMO/LCAO-MO-CO 方法。计算结果再次证实我们在前文给出的规律,即分子晶体能带的位置由其孤立分子相应分子轨道能级的位置决定,而能带宽度由相邻分子的相应分子轨道间的相互作用决定。本文还对该晶体的能带结构及其与室温电导率的关系进行了讨论,并与 NMP·TCNQ 和 TTF·TCNQ 晶体的进行比较。     

分子导体:[NCBzPy][TCNQ]2和[FBzPy][TCNQ]2的合成及光谱研究

合成了两种新的取代苄基吡啶盐[NCBzPy]Cl(1)和[FBzPy]cl(2),1(或2)与LiTCNQ,TCNQ进一步反应生成[NCBzPy][TCNQ]2(3){或[FBzPy][TCNQ]2(4)}。IR研究表明：TCNQ盐中存在TCNQ^o和TCNQ^-,并形成了一维TCNQ分子柱,且TCNQ^o和TCNQ^-之间存在相互作用,有部分电荷发生转移。     

DPA(TCNQ)2的烧孔阈值电压对脉宽的依赖关系

合成了一种新的二元电荷转移复合物DPA(TCNQ)2（二丙胺-7,7,8,8-四氰基对亚甲基苯醌)，并得到了其单晶ab面的STM高分辨图像，表面晶格常数与体相晶格常数的XRD数据完全一致.用STM成功地写入了5×5的信息点阵，并在5.1 μm×5.1 μm的面积上写入更大规模的信息点阵，写入的可靠性和稳定性都很高.实验发现，烧孔阈值电压强烈依赖于脉宽,这一现象不支持场致蒸发的机理.理论分析表明，它支持热化学烧孔的机理.     

The Photovoltage-gas Sensitive Properties of 7,7,8,8-Tetracyanoquinodimethane(TCNQ)

In this paper, surface photovoltage technique (SPV) was applied to the study of photovoltaic and gas sensitive properties of TCNQ polycrystal. It was found that SPV shows two peaks at 390 nm(P1) and 480 nm (P2) in the ultraviolet-visible range. And they are opposite in phase. The results of gaseous adsorption confirm that P, shows the acceptor characteristics, while PI shows that of donor. During adsorption, donor gas interacts with conjugated II * orbital, acceptor gas with the terminal group C=N .     

Ag(TCNQ)准一维微米结构的制备及表征

利用溶液化学反应法制备了准一维结构的金属有机配合物Ag(TCNQ). X射线衍射(XRD)表明，所制备的Ag(TCNQ)为晶态结构;扫描电子显微镜(SEM)的观察证明，Ag(TCNQ)为准一维的微米管或线；Raman 测试结果表明，单根的Ag(TCNQ)形成时,Ag原子与TCNQ分子之间发生了电荷转移.对样品的制备工艺,即 Ag膜厚度和浸入溶液的反应时间对生成Ag(TCNQ)晶体形貌的影响进行了研究.结果表明，Ag膜越薄，生长出的晶体越稀疏;Ag膜与TCNQ乙腈溶液的反应时间影响其形貌的变化.反应历经三个阶段,晶体形成和长大阶段、反应完全阶段及溶解阶段.     

{[Ag2 (μ-dppm)2 (μ-TCNQ)2](TCNQ)}, a charge transfer compound derived from a donor with a metal–metal bond

Reaction of AgNO3, dppm (bis(diphenylphosphino)methane), and TCNQ in molar ratio of 1 : 1 : 1 produced an acceptor–donor silver compound {[Ag₂(dppm)₂ (µ-TCNQ)₂](TCNQ)}, 1. In the structure, determined by X-ray crystallography, two silver atoms are triply-bridged by two dppm ligands and metal–metal bond to form a dimer; the distance between two Ag is 3.1753(8) Å. Compound 1 was studied by IR and UV/Vis/NIR spectroscopy, exhibiting an intervalence transfer transition at λ = 1286 nm, and also is photoluminescent (λ_max = 537 and 654 nm) at room temperature.     

THE CRYSTAL STRUCTURE OF TETRATHIOPHENE TCNQ COMPLEX

<正> C28H16N4S4 Mr=534.7 triclinic Pl, a=7.8941(15)A, b=8.8833(11)A, c=10.3229(12)A; α=109.712(10)°, β=109.125(13)°, r=97.946(13)°, V=618.21(18) A3, Z=1; μ(MoKα)=3.93 cm-1, F(000)=273.95, room temperature, final R=0.085 for 1123 independent reflections. In the title complex the planes tetra-thiophene and TCNQ are face to face mixed and packed along c axis to form one dimensional column.     

高导电性ML(TCNQ)_n(n=2,3)盐的磁性研究

测定了高导电性ML(TCNQ)n盐的ESR谱和变温磁化率数据,结果表明,在某些ML(TCNQ)_3中存在电子由[ML]~(2+)至(TCNQ)_8~(2-)的转移,使之成为n-型半导体。     

离子对化合物[(IBz)_2Im](TCNQ)的合成与结构表征(英文)

A novel compound [(IBz)2Im](TCNQ) [(IBz)2Im=1,3-bis(4-iodobenzyl) imidazole cation, TCNQ-=7,7,8,8-tetracyanoquinodimethanide anion] was synthesized by the reaction of [(IBz)2Im]Br and LiTCNQ in CH3OH and its structure was determined by single-crystal X-ray diffraction. The crystal belongs to monoclinic, space group P21/c with a=1.147 35(18) nm, b=2.028 1(3) nm, c=1.264 1(2) nm, β=104.73(0)°, V=2.666(65) nm3, Z=4, C29H19I2N6, Mr= 705.30, Dc=1.757 g·cm-3, R1=0.053 2 and wR2=0.111 2. The structure analysis shows that the anions are stacked into column with isolated π-dimers, and there is one type of TCNQ entries (TCNQ-), in agreement with the IR spectra analysis of the compound. The most prominent structural features are the completely segregated stacking columns of the TCNQ-anions and [(IBz)2Im]+ cations. CCDC: 759523.     

THE CRYSTAL STRUCTURE OF BITHIOPHENE TCNQ COMPLEX

<正> C20H10N4S2, Mr=370.5, triclinic Pl, a=6.734(5), b=7.801(5), c=8.964(5) A; α=98.62(5)°, β=99.23(5)°, r=103.03(5)°, V=444.7(5)A3. Z=l; μ(MoKα) =2.96cm-1, F(000)=189.96, room temperature. Final R=0.0798 for 968reflections. The planar bithiophene and TCNQ of the title complex are face to face mixed and stacked along the a axis.     

(TCNQ)22-基氢键分子磁体表现出非常强的反铁磁偶合作用

合成并表征了一种新的离子对化合物[4-NH2-Py][TCNQ](其中4-NH2-Py+是4-氨基吡啶阳离子,TCNQ-为7,7,8,8-四氰基对苯二醌二甲烷自由基阴离子)。在该离子对化合物晶体中,2个TCNQ-离子形成了面对面堆积的二聚体;阴离子中的氰基分别和阳离子上的氨基、吡啶质子化氮原子之间存在非常强的分子间氢键。通过氢键作用,相邻的TCNQ-二聚体被阳离子连成三维氢键网络。变温磁化率测量表明,在2～400 K温度范围内,该离子对化合物表现为抗磁性。在密度泛函理论框架下,用对称性破损方法计算了化合物晶体中π二聚体内以及通过氢键连接的相邻的TCNQ-离子之间的磁交换常数,发现π二聚体内存在非常强的反铁磁交换作用,与之相比,通过氢键连接的TCNQ-离子之间的磁交换作用可以忽略。π二聚体内强反铁磁交换作用(J/kB≈1805 K)导致了该化合物基本表现为抗磁性。     

ELECTRONIC ENERGY BAND STRUCTURE OF MOLECULAR CRYSTALS MCI·(TCNQ)_2 AND ITS RELATIONSHIP WITH THE ELECTRICAL CONDUCTION

The structure of electronic energy bands, electric charge distribution and the amount of charge transfer of molecular crystals 1-MCI·(TCNQ)_2 (Ⅰ) and 2-MCI· (TCNQ)_2 (Ⅱ) have been studied. The results are: (ⅰ) The dominant contributions to the electrical conductivities for crystals Ⅰ and Ⅱ are from TCNQ molecular columns, and the charge carriers are electrons. (ⅱ) The electrical conduction is mainly due to the hopping of charge carriers between the seats of lattice. (ⅲ) The considerable difference of the electrical conductivities between crystals Ⅰ and Ⅱ is due to the differences between (a) the concentrations of charge carriers n_(AⅠ)~C= 0.9988-|e|/cell and n_(AⅡ)~C=0.0340-|e|/cell; (b) the widths of the energy bands △E_(AⅠ)~(LU)=0.88 eV and △E_(AⅡ)~LU=0.040 eV; (c) the first derivative of E with respect to k, (dE/dk)_(K_FAⅠ)~(LU)=0.27 eV· and (dE/dk)_(K_FAⅡ)~LU=0.0048 eV·; and (d) the difference of energy barriers for the hopping of charge carriers ∈_Ⅱ-∈Ⅰ=2.5-8.8 kJ/mol.     

MCI·(TCNQ)_2电荷转移复合物分子晶体的电子能带结构及其与导电性能关系的研究

本文对1-MCI·(TCNQ)_2(Ⅰ)及2-MCI·(TCNQ)_2(Ⅱ)两种电荷转移复合物分子晶体的电子能带、电荷分布及电荷转移量进行了研究,指出:(1)晶体中TCNQ分子柱对导电起主要作用,载流子是电子。(2)导电主要是采取载流子在格点间跳跃(hopping)的方式进行。(3)晶体(Ⅰ),(Ⅱ)电导率的显著差别是由于载流子浓度,n_(AⅠ)~c=0.9988-|e|/cell,n_(AⅡ)=0.0340-|e|/cell;能带宽度△E(?)=0.088eV,△E(?)=0.040eV;(dE/dk)(?)=0.27eV·(?),(dE/dk)(?)=0.0048eV·(?)以及载流子在格点间跳跃的势垒E_(11)-E_1=2.5-8.8 kJ/mol等显著差别所致。     

Ag/TCNQ薄膜中的传质行为研究

采用真空蒸发的方法在玻璃基板上交替蒸发Ag和TCNQ(四氰基对醌二甲烷), 形成不同厚度的双层膜, 经Ag的固体化学扩散与TCNQ反应, 形成金属有机络合物. 利用透射光谱作为表征, 研究了Ag的传质规律, 给出了60~110 ℃温度下的恒温传质系数k和对应的激活能, 并对传质机制进行了探讨.     

Charge transfer adducts of metal complexes of π-donor ligands with I2 and TCNQ

Copper(II) and nickel(II) biguanides and O-alkyl-1-amidinourea can act as donors for the formation of charge transfer (CT) adducts with I₂ and tetracyanoquinodimethane (TNCQ) as acceptors. Iodine adducts are characterized both in solid and solution states whereas TCNQ adducts obtain only in solution. Appearance of a broad band at 355 nm for iodine adducts and at 335 nm for TNCQ adducts and shifting of i.r. frequencies support the formation of donor acceptor associates. Elemental analysis establishes 1:1 stoichiometry of the solid adducts. The K and ε values determined by modified Benesi—Hildebrand, Scott and Rose—Drago equations are found to be of the order of 10⁴ and 10³ respectively at 298 K in methanol. The solvent effect on the K values is discussed in terms of coupled solute-solute and solute-solvent equilibria.     

Interplay between crystal and magnetic structure of the anion-radical salt (N-Me-2,6-di-Me–Py)(TCNQ)2 (Py is pyridine)

Genuine organic anion-radical salt (N-Me-2,6-di-Me–Py)(TCNQ)₂ with pyridine-based cation was synthesized and its crystal structure was resolved. The DC magnetic susceptibility was measured in temperature range from 2 K to 300 K in magnetic fields 10 mT, 100 mT and 1 T. Zero field cooling (ZFC) and field cooling (FC) modes were used. The results were studied in terms of one-dimensional magnetic models and we have found that the most suitable of them is an antiferromagnetic linear Heisenberg S = 1/2 system with small amount of free spins. An additional peak observed at low temperatures can be explained by an interchain coupling between free chain-end spins.     

TCNQ光电压气敏特性的量子化学研究

7,7,8,8-四氰基对苯醌二甲烷(TCNQ)的CT复合物是良好的导电材料,具有许多超常的特性,我们曾用表面光电压技术(SPV)首次观察到TCNQ多晶内部既有施主基团又有受主基团,TCNQ与探针分子(CO,O_2,No_2)作用,其光电压谱发生2类不同的变化。为从理论上阐明产生不同光电压谱的原因,本文用CNDO法研究了TCNQ的电子结构及其与探针分子的相互作用,讨论了气敏特性与机理。     

真空沉积TCNQ薄膜的手性分形结构

分形是非线性科学中的一个重要分支,自１９７３年Ｍａｎｄｅｌｂｒｏｔ提出分形这一概念以来［１］,关于分形的实验和理论研究日益受到人们的重视［２,３］．自发现７,７,８,８ 四氰基对苯醌二甲烷（ＴＣＮＱ）与某些电子给体的复合物薄膜具有独特的电学特性［４,５］,至今人们对ＴＣＮＱ类薄膜器件进行了广泛的研究［６ -１０］．Ｇａｏ等［１１,１２］ 最早报导了真空离子团束 (ＩＣＢ)沉积的Ｃ６０ ＴＣＮＱ复合薄膜有独特的“海马”分形结构．由于ＩＣＢ沉积技术中的粒子有一定的荷电几率,而外加电场又会影响薄膜生长初期的分…