共查询到20条相似文献,搜索用时 15 毫秒
1.
I. Marozau A. Shkabko G. Dinescu M. Döbeli T. Lippert D. Logvinovich M. Mallepell A. Weidenkaff A. Wokaun 《Applied Physics A: Materials Science & Processing》2008,93(3):721-727
Perovskite-type nitrogen substituted SrTiO3 thin films were deposited with a one-step process by RF-plasma assisted pulsed laser deposition from a SrTiO3 target using a N2 plasma, while deposition with a NH3 plasma yields films with almost no incorporated nitrogen. The deposited films exhibit a cubic perovskite-type crystal structure and reveal oriented growth on MgO(100) substrates. The unit cell parameters of the studied N-doped SrTiO3 films range within 3.905<a<3.918 Å, which is slightly larger than for SrTiO3 (a=3.905 Å). The nitrogen content in the deposited films varies from 0.2 to 0.7 atom%. The amount of incorporated nitrogen in the films decreases with increasing RF-power, while the N2 flow rate does not have any pronounced influence on the N content. Nitrogen incorporation results in an increased optical absorption at 400–600 nm, which is associated with N(2p) energy states that have a higher energy level than the valence band in strontium titanate. The optical band gap energies in the studied N-doped SrTiO3 films are at 3.2–3.3 eV, which is very similar to that of pure strontium titanate (~3.2 eV). Films deposited with NH3 for the RF-plasma exhibit a lower degree of crystallinity and reveal almost no nitrogen incorporation into the crystal lattice. 相似文献
2.
Martin Pavlišta Martin Hrdlička Petr Němec Jan Přikryl Miloslav Frumar 《Applied Physics A: Materials Science & Processing》2008,93(3):617-620
Amorphous chalcogenide thin films were prepared from As2Se3, As3Se2 and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined
using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on
the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results
were compared with experimental data. 相似文献
3.
S. Heiroth Th. Lippert A. Wokaun M. Döbeli 《Applied Physics A: Materials Science & Processing》2008,93(3):639-643
Yttria-stabilized zirconia (YSZ) is the most common solid electrolyte material used e.g. in ceramic fuel cells. Thin films
of YSZ were deposited on c-cut sapphire single crystals by pulsed laser deposition using a KrF excimer laser focused on a polycrystalline 8 mol% Y2O3-stabilized ZrO2 target. Depending on the substrate temperature and the oxygen background pressure during deposition, different microstructures
are obtained. XRD and high-resolution SEM revealed the formation of dense amorphous films at room temperature. At 600°C preferentially
(111) oriented polycrystalline films consisting of densely agglomerated nm-sized grains of the cubic phase resulted. Grain
size and surface roughness could be controlled by varying the oxygen background pressure. RBS and PIXE evidenced congruent
transfer only for a low number of pulses, indicating a dynamical change of the target stoichiometry during laser irradiation.
The in-plane ionic conductivity of the as-deposited crystalline films was comparable to bulk YSZ. The conductivity of initially
amorphous YSZ passes a maximum during the crystallization process. However, the relative changes remain small, i.e. no significant
enhancement of ionic conductivity related to the formation of a nanocrystalline microstructure is found. 相似文献
4.
Michael J. Aziz 《Applied Physics A: Materials Science & Processing》2008,92(3):579-587
This paper reviews our recent studies of the fundamentals of growth morphology evolution in Pulsed Laser Deposition in two
prototypical growth modes: metal-on-insulator island growth and semiconductor homoepitaxy. By comparing morphology evolution
for pulsed laser deposition and thermal deposition in the same dual-use chamber under identical thermal, background, and surface
preparation conditions, and varying the kinetic energy by varying the laser fluence or using an inert background gas, we have
isolated the effect of kinetic energy from that of flux pulsing in determining the differences between morphology evolution
in these growth methods. In each growth mode analytical growth models and Kinetic Monte Carlo simulations for thermal deposition,
modified to include kinetic energy effects, are successful at explaining much of what we observe experimentally. 相似文献
5.
A. Sikora A. Berkesse O. Bourgeois J.-L. Garden C. Guerret-Piécourt A.-S. Loir F. Garrelie C. Donnet 《Applied Physics A: Materials Science & Processing》2009,94(1):105-109
We report on electrical measurements and structural characterization performed on boron-doped diamond-like carbon thin films
deposited by femtosecond pulsed laser deposition. The resistance has been measured between 77 and 300 K using four probe technique
on platinum contacts for different boron doping. Different behaviours of the resistance versus temperature have been evidenced
between pure DLC and boron-doped DLC. The a-C:B thin film resistances exhibit Mott variable range hopping signature with temperature.
Potential applications of DLC thin films to highly sensitive resistive thermometry is going to be discussed. 相似文献
6.
D. Valerini A. P. Caricato M. Lomascolo F. Romano A. Taurino T. Tunno M. Martino 《Applied Physics A: Materials Science & Processing》2008,93(3):729-733
We report the use of PLD to grow different ZnO nanostructures. Very different film morphologies have been observed using different
laser wavelengths to ablate the target. The influence of substrate temperature and oxygen background pressure on the film
morphology has been investigated too. Smooth and rough films, hexagonal pyramids and columns have been obtained by using a
KrF excimer laser (248 nm) for the target ablation, while hexagonal hierarchical structures and pencils have been obtained
by using ArF (193 nm). Photoluminescence and X-ray diffraction measurements revealed the good quality of the samples, in particular
of those deposited using the ArF laser beam. 相似文献
7.
L. Egerhazi Zs. Geretovszky T. Szorenyi 《Applied Physics A: Materials Science & Processing》2008,93(3):789-793
Since the advent of pulsed laser deposition (PLD), several different target-substrate arrangements have been proposed. Besides
the most common on-axis PLD, several off-axis geometries were studied, mainly to protect the substrate from the agglomerated
species (clusters, droplets, particulates) of the plasma plume, which are detrimental to the homogeneity of films. Recently
we introduced a novel geometry, termed inverse pulsed laser deposition (IPLD), in which the substrate is placed parallel to
and slightly above the target plane. In this paper we summarize our results on this new geometry, and show how it can extend
the perspectives of pulsed laser deposition, e.g., by improving the surface morphology of the films. Effects of ambient pressure
are presented and exemplified on metallic and compound IPLD films, including Ti, CN
x
, and Ti-oxides. AFM topographic images are used to prove that under optimized conditions IPLD is capable of growing compact
and smooth films that are superior to PLD ones. A special—but easy-to-implement—IPLD arrangement is also introduced that considerably
improves the homogeneity of IPLD films. In this geometry, the properties (e.g., deposition rate and roughness) of the films
grown in the 1–25 Pa pressure domain are examined. 相似文献
8.
Tatsunori Sakano Hiroki Fukuoka Yoshihiro Yata Toshiharu Saiki Minoru Obara 《Applied Physics A: Materials Science & Processing》2008,93(3):697-703
We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were
grown by pulsed laser deposition (PLD) method. The as-grown films were annealed for one hour under atmospheric pressure air.
ZnO morphologies after annealing were investigated and the post-annealed ZnO films grown at T
g
=700oC have very smooth surfaces and the rms with roughness is about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted
between ZnO epilayer and GaN/sapphire substrates. It is confirmed by AFM that growth temperature of 700oC helps the films grow in step-flow growth mode. It is observed by cathode luminescence spectrum that the ZnO film grown at
700oC has very low visible luminescence, indicating the decrease of the deep level defects. It is also revealed by Hall measurements
that carrier concentration is decreased by increasing the growth temperatures. It is suggested that low temperature buffer
layer growth and post-annealing technique can be used to fabricate ZnO hetero-epitaxy. 相似文献
9.
L. Escobar-Alarcón A. Arrieta E. Camps S. Romero M. Fernandez E. Haro-Poniatowski 《Applied Physics A: Materials Science & Processing》2008,93(3):605-609
The plasma produced by the ablation of a high purity Al2O3 target, using the fundamental line (1064 nm) of a Nd:YAG laser, was characterized. The laser fluence was varied in order
to study its effect on the characteristics of the produced plasma as well as on the properties of the material deposited.
Optical emission spectroscopy (OES) was used to determine the type of excited species present in the plasma. The mean kinetic
energy of the ions and the maximum plasma density were determined from the time of flight (TOF) curves, obtained with a planar
Langmuir probe. The obtained results reveal that the fast peak in the probe curve could be attributed to Al III, while the
slow peak corresponds to the Al II. Aluminum oxide thin films were then deposited under the same conditions of the diagnosed
plasma, in an attempt to correlate the plasma parameters with the properties of the deposited material. It was found that
when Al II ion energies are lower than 461.0 eV the films deposited have structural characteristics similar to that of α-Al2O3, whereas at ion energies greater than 461.0 eV amorphous material was obtained. 相似文献
10.
TiO2 films were prepared by pulsed laser deposition using a metallic Ti target in an O2 gas ambient. The microstructure along with optical and photocatalytic properties of the deposited films were systematically
studied by changing the deposition parameters and substrates. It was found that TiO2 films having nearly pure anatase phase grew effectively in O2 atmosphere. When the films were fabricated at a substrate temperature of 400°C, their phase structures were greatly affected
by the O2 gas pressure, and nearly pure anatase phase with typical (101) and (004) peaks can be obtained under an O2 pressure of 15 Pa. For the deposition at 700°C, the crystal structure of the TiO2 films exhibited a strong anatase (004) peak and was inert to the oxygen pressures. Two modes, namely a substrate-temperature-controlled
mode and an oxygen-pressure-controlled mode, were considered for the growth of the anatase TiO2 films under different substrate temperatures. In addition, the optical and photocatalytic properties were found to be sensitive
to both the microstructure and grain size of the TiO2 films. 相似文献
11.
F. Di Fonzo D. Tonini A. Li Bassi C. S. Casari M. G. Beghi C. E. Bottani D. Gastaldi P. Vena R. Contro 《Applied Physics A: Materials Science & Processing》2008,93(3):765-769
Alumina is technologically exploited in several forms, ranging from compact hard films as protective coatings to open microstructures
of high specific area as supports for catalysts. Currently, various production processes are used to deposit the different
forms. PLD has the potential of obtaining not only the different forms, but also a continuous modulation of properties, by
tuning of the process parameters. This work investigates the relationship between the process parameters and the resulting
film morphology, structure and properties for PLD performed with an alumina target in a background oxygen atmosphere. Three
distinct growth regimes are found, leading, respectively, to compact homogeneous films, columnar structures and open microstructures.
These structures are quantitatively characterized, and the ranges of the process parameters corresponding to the three regimes
are identified. An empirical scaling law is proposed, which can be exploited as a guide for the design of growth processes
aimed at obtaining specific film properties. 相似文献
12.
Satoshi Kurumi Yohei Shimizu Shotaro Kobayashi Kouichi Takase Kaoru Suzuki 《Applied Physics A: Materials Science & Processing》2008,93(3):741-743
We have attempted to control the photoluminescence spectrum of transparent p-type semiconductor (LaO)CuS to check possibilities of phosphor application using non-stoichiometric thin films prepared by
pulse laser deposition method. Two kinds of samples are examined, one is the samples that contain the excess S and the other
is the excess Cu. All samples are a single phase without impurities, regardless of heavily doping. Lattice constants for all
samples don’t depend on the concentration of excess atoms. Perhaps, this is due to the nature of the layered materials. Introduction
of excess atoms leads to change the photoluminescence spectra. The excess S and Cu have much effect on the red and the blue
luminescence bands, respectively. We have succeeded in the tuning luminescence band of photoluminescence spectra. 相似文献
13.
Malgorzata Walczak Mohamed Oujja José Francisco Marco Mikel Sanz Marta Castillejo 《Applied Physics A: Materials Science & Processing》2008,93(3):735-740
Promising applications of TiO2 nanostructures include the development of optical devices, sensors, photocatalysts and self-cleaning coatings. In view of
their importance, research on the synthesis of nanosized TiO2 is a particularly active field. In this work we report on the investigation of the effect of laser irradiation wavelength
(Q-switched Nd:YAG laser at 532, 355 and 266 nm), the temperature of the substrate and the atmosphere of deposition (vacuum,
Ar and O2) that are suitable for obtaining nanostructured deposits from TiO2 sintered targets. The ablation plume emission is characterized with spectral and temporal resolution by optical emission
spectroscopy (OES), while the surface morphology and chemical states of the material deposited on a Si (100) substrate are
examined by environmental scanning electron microscopy (ESEM) and atomic force microscopy (AFM) and by X-ray photoelectron
spectroscopy (XPS), respectively. Deposits with nanostructured morphology with grain size down to 40 nm and keeping the stoichiometry
of the targets were obtained at high temperature, while the highest concentration of particulates was observed at the longest
laser wavelength of 532 nm on a substrate heated up to 650°C. In situ characterization of the ablation plume, carried out
by OES, indicated the presence of emissions assigned to Ti I, Ti II and O I. 相似文献
14.
A. A. Morozov Z. Geretovszky L. Égerházi T. Szörényi 《Applied Physics A: Materials Science & Processing》2008,93(3):691-696
A simple analytical model for inverse pulsed laser deposition is proposed. In the model the motion of the evaporated material
is assumed to emerge as from a point source located above the surface of evaporation at some distance. The obtained thickness
profiles of inverse deposited films agree well with those calculated by the test particle Monte Carlo method. The proposed
approach has been applied for analysis of experimental data on inverse pulsed laser deposition of graphite in nitrogen atmosphere
with nanosecond pulses of laser fluences between 1 and 7 J/cm2. The model describes well the thickness profiles and pressure dependence of film growth rate for inverse deposition. 相似文献
15.
Enrique Camps L. Escobar-Alarcón V. H. Castrejón-Sánchez P. Tolentino-Eslava 《Applied Physics A: Materials Science & Processing》2008,93(3):759-763
Amorphous carbon thin films were deposited by laser ablation of a graphite target, using the fundamental line of a 5 ns Nd:YAG
laser. Deposition was carried out as a function of the plasma parameters (mean kinetic ion energy and plasma density), determined
by means of a planar probe. In the selected working regimes the optical emission from the plasma is mainly due to atomic species,
namely C+ (426.5 nm); however, there is also emission from other atomic species and molecular carbon. The hardness and resistivity
could be varied in the range between 10 and 25 GPa, and 108 and 1011 Ω cm, respectively. The maximum values were obtained at a 200 eV ion energy and 6×1013 cm−3 plasma density, where the maximum quantity of C–C sp3 bonds was formed, as confirmed by Raman spectroscopy. 相似文献
16.
H. Minami D. Manage Y.Y. Tsui R. Fedosejevs M. Malac R. Egerton 《Applied Physics A: Materials Science & Processing》2001,73(5):531-534
We have compared the quality of carbon films deposited with magnetically guided pulsed laser deposition (MGPLD) and conventional
pulsed laser deposition (PLD). In MGPLD, a curved magnetic field is used to guide the plasma but not the neutral species to
the substrate to deposit the films while, in conventional PLD, the film is deposited with a mixture of ions, neutral species
and clusters. A KrF laser pulse (248 nm) was focused to intensities of 10 GW/cm2 on a carbon source target and a magnetic field strength of 0.3 T was used to steer the plasma around a curved arc to the
deposition substrate. Electron energy loss spectroscopy was used in order to measure the fraction of sp3 bonding in the films produced. It is shown that the sp3 fraction, and hence the diamond-like character of the films, increased when deposited only with the pure ion component by
MGPLD compared with films produced by the conventional PLD technique. The dependence of film quality on the laser intensity
is also discussed.
Received: 7 December 2000 / Accepted: 20 August 2001 / Published online: 2 October 2001 相似文献
17.
J. Cifre J. Bertomeu J. Puigdollers M. C. Polo J. Andreu A. Lloret 《Applied Physics A: Materials Science & Processing》1994,59(6):645-651
Silicon films were deposited at moderate substrate temperatures (280–500° C) from pure silane and a silane-hydrogen mixture (10% SiH4, 90% H2) in a hotwire CVD reactor. The morphology, structure and composition of the samples were studied with scanning electron microscopy, transmission electron microscopy, transmission electron diffraction, X-ray diffraction, Raman spectroscopy and secondary ion mass spectrometry. The sample deposited at 500° C with pure silane has an amorphous structure, whereas the samples obtained from silane diluted in hydrogen have a polycrystalline structure, even that grown at the lowest temperature (280° C). Polycrystalline samples have a columnar structure with 0.3–1 m crystallite sizes with preferential orientation in [220] direction. Deposition rates depend on the filament-substrate distance and range from 9.5 to 37 Å/s for the polycrystalline samples. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising. Moreover, it is expected to be easily scaled up for applications to large-area optoelectronic devices and to photovoltaic solar cells. 相似文献
18.
The deposition rates of permalloy and Ag are monitored during pulsed laser deposition in different inert gas atmospheres.
Under ultrahigh vacuum conditions, resputtering from the film surface occurs due to the presence of energetic particles in
the plasma plume. With increasing gas pressure, a reduction of the particle energy is accompanied with a decrease of resputtering
and a rise in the deposition rate for materials with high sputtering yield. In contrast, at higher gas pressures, scattering
of ablated material out of the deposition path between target and substrate is observed, leading to a decrease in the deposition
rate. While in the case of Xe and Ar these processes strongly overlap, they are best separated in He. A He pressure of about
0.4 mbar should be used to reduce the kinetic energy of the deposited particles, to reach the maximum deposition rate and
to avoid implantation of the particles. This is helpful for the preparation of stoichiometric metallic alloy films and multilayers
with sharp interfaces.
Received: 27 March 2002 / Accepted: 3 April 2002 / Published online: 5 July 2002 相似文献
19.
Shoubin Xue Xing Zhang Ru Huang Huizhao Zhuang 《Applied Physics A: Materials Science & Processing》2009,94(2):287-291
ZnO thin films were first prepared on Si(111) substrates using a radio frequency magnetron sputtering system. Then the as-grown
ZnO films were annealed in oxygen ambient at temperatures of 700, 800, 900, and 1000°C , respectively. The morphologies of
ZnO films were studied by an atom force microscope (AFM). Subsequently, GaN epilayers about 500 nm thick were deposited on
the ZnO buffer layers. The GaN/ZnO films were annealed in NH3 ambient at 900°C. The microstructure, morphology and optical properties of GaN films were studied by x-ray diffraction (XRD),
AFM, scanning electron microscopy (SEM) and photoluminescence (PL). The results are shown, their properties having been investigated
particularly as a function of the ZnO layers. For better growth of the GaN films, the optimal annealing temperature of the
ZnO buffer layers was 900°C. 相似文献
20.
Mingsong Wang Xiaonong Cheng Juan Yang 《Applied Physics A: Materials Science & Processing》2009,96(3):783-787
ZnO thin films were prepared by RF magnetron sputtering. The photoluminescence dependence on the growth ambient and annealing
temperatures and the atmosphere has been studied. Visible photoluminescence with blue, green, orange, and red emission bands
has been demonstrated by controlling the preparation conditions. Complete suppression of the visible emission bands was also
realized by annealing the O2-ambient-grown samples in N2 atmosphere at higher temperatures, which indicated the preparation of ZnO thin films with high optical quality. 相似文献