Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.     

Effect of Different Substrate Temperature on Phosphorus-Doped ZnO Thin Films Prepared by PLD on Sapphire Substrates

Phosphorus-doped ZnO （ZnO：P） thin films are deposited on a c-plane sapphire in oxygen at 350℃, 450℃, 550℃ and 650℃, respectively, by pulsed laser deposition （PLD）, then all the ZnO：P samples are annealed at 650℃ in oxygen with a pressure of 1 × 10^5 Pa. X-ray diffraction measurements indicate that the crystalline quality of the ZnO：P thin films is improved with the increasing substrate temperature from 350℃ to 550℃. With a further increase of the deposition temperature, the crystalline quality of the ZnO：P sample is degraded. The measurements of low-temperature photoluminescence spectra demonstrate that the samples deposited at the substrate temperatures of 350℃ and 450℃ show a strong acceptor-bound exciton （A^0X） emission. The electrical properties of ZnO：P films strongly depend on the deposition temperature. The ZnO：P samples deposited at 350℃ and 450℃ exhibit p-type conductivity. The p-type ZnO：P film deposited at 450℃ shows a resistivity of 1.846Ω·cm and a relatively high hole concentration of 5.100 × 10^17 cm^-3 at room temperature.     

Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates

Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.     

Characterization of Undoped and Cu-Doped ZnO Thin Films Deposited on Glass Substrates by Spray Pyrolysis

Undoped and copper doped zinc oxide （ZnO） thin films have been prepared on glass substrates by spray pyrolysis technique. The films were doped with copper using the direct method by addition of a copper salt （CuCl2） in the spray solution of ZnO. Variation of structural, electrical, optical and thermoluminescence （TL） properties with doping concentrations is investigated in detail.     

Structure distortion,optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl 3 to SbCl 3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550°C for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10 8 , 3.26×10 8 , 5.23×10 8 , and 6.97×10 8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.     

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

The N-Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N-monodoped ZnO films, and the NAg codoped low-resistivity p-type ZnO films with the resistivity of 1.05 Ω·cm, relatively high carrier concentration of 5.43×10^17 cm^-3, and Hall mobility of 10.09 cm^2 V^-1s^-1 are obtained under optimized conditions. This achievement confirms that p- type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.     

Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared by MOCVD

Reproducible p-type phosphorus-doped ZnO （p-ZnO：P） films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole concentration of 9.02 × 10^17 cm ^-3, a mobifity of 1.05 cm^2 /Vs, and a resistivity of 6.6 Ω.cm. Obvious acceptorbound-exciton-related emission and P-induced zinc vacancy （Vzn） emission are observed by low-temperature photoluminescence spectra of the films, and the acceptor binding energy is estimated to be about 125meV. The local chemical bonding environments of the phosphorus atoms in the ZnO are also identified by x-ray photoelectron spectra. Our results show direct experimental evidence that Pzn-2Vzn shallow acceptor complex most likely contributes to the p-type conductivity of ZnO：P films.     

The effect of composition on structural and electronic properties in polycrystalline CuGaSe2 thin film

Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope （XRD） and x-ray fluorescence （XRF）. A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope （SEM） for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass （AM）1.5 spectrum for 100mW/cm^2 at room temperature （aperture area, 0.24cm^2）. The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.     

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so--gel spin coating

ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl₃ to SbCl₃ at 1:2, are prepared by a sol--gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10⁸, 3.26×10⁸, 5.23×10⁸, and 6.97×10⁸ Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.     

Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity

A Van der Pauw Hall measurement is performed on the intended doped ZnO films （Na doped ZnO） grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples （annealing temperature 900℃） show ambiguous carrier conductivity type （n- and p-type） in the automatic Van der Pauw Hall measurement. A similar result has been observed in Li doped ZnO and in as-doped ZnO films by other groups before. However, by tracing the Hall voltage in the Van der Pauw Hall measurement, it is found that this alternative appearance of both n- and p-type conductivity is not intrinsic behavior of the intended doped ZnO films, but is due to the persistent photoconductivity effect in ZnO. The persistent photoconductivity effect would strongly affect the accurate determination of the carrier conductivity type of a highly resistive intended doped ZnO sample.     

Photo-thermal Shot Noise in End Mirrors of LIGO due to Correlation of Power Fluctuation

The effect of input power fluctuation on photo-thermal shot noise in the end mirrors of a laser interferometer gravitational-wave observatory （LIGO） is analysed according to the statistical optics, which is a supplement of Braginsky＇s research. The laser light folding in LIGO increases a correlation of input power fluctuation in the photo-thermal shot noise. This part of noise has spectral density proportional to -2 in low frequency bands, and -4 in high frequency bands. It is not a white noise and may affect the processing about data of interferometers. To obtain an advanced LIGO, photo-thermal shot noise in end mirrors due to correlation of input power fluctuation is up to Braginsky＇s photo-thermal noise in the frequency range 1-100 Hz.     

Macro-Behaviour of Agents＇ Opinion under Influence of an External Field

We propose a model to study the evolution of opinion under the influence of all external field on small world network. The maero-behaviour of agents＇ opinion and the relative change rate as time elapses are studied. The external field is found to play an important role in making the opinion s（t） balance or increase, and without the influence of the external field, the relative change rate γ（t） shows nonlinear increasing behaviour as time runs. What is more, this nonlinear increasing behaviour is independent of the initial condition, the strength of the external field and the time that we cancel the external field. The results may reflect some phenomena in our society, such as the function of the macro-control in China or the mass media in our society.     

Fisher Information of Wavefunctions： Classical and Quantum

A parametric quantum mechanical wavefunction naturally induces parametric probability distributions by taking absolute square, and we can consider its classical Fisher information. On the other hand, it also induces parametric rank-one projections which may be viewed as density operators, and we can talk about its quantum Fisher information. Among many versions of quantum Fisher information, there are two prominent ones. The first, defined via a quantum score function, was introduced by Helstrom in 1967 and is well known. The second, defined via the square root of the density operator, has its origin in the skew information introduced by Wigner and Yanase in 1963 and remains relatively unnoticed. This study is devoted to investigating the relationships between the classical Fisher information and these two versions of quantum Fisher information for wavefunctions. It is shown that the two versions of quantum Fisher information differ by a factor 2 and that they dominate the classical Fisher information. The non-coincidence of these two versions of quantum Fisher information may be interpreted as a manifestation of quantum discord. We further calculate the difference between the Helstrom quantum Fisher information and the classical Fisher information, and show that it is precisely the instantaneous phase fluctuation of the wavefunctions.     

Instability of Solution of Phase Retrieval in Direct Diffraction Phase-Contrast Imaging with Partially Coherent X-Ray Source

The theoretical model of direct diffraction phase-contrast imaging with partially coherent x-ray source is expressed by an operator of multiple integral. It is presented that the integral operator is linear. The problem of its phase retrieval is described by solving an operator equation of multiple integral. It is demonstrated that the solution of the phase retrieval is unstable. The numerical simulation is performed and the result validates that the solution of the phase retrieval is unstable.     

Chemical Potential Dependence of Two-Quark Condensates

By adopting the background field method, the response of the dressed quark propagator to the presence of finite chemical potential is analysed up to the second order. From this, we obtain a model-independent formula for the chemical potential dependence （up to the second order） of the in-medium two-quark condensate and show by both Lorentz covariance arguments and explicit calculations that the O（μ） contribution to the in-medium two-quark condensate vanishes identically.     

The Genesis of Physics at the Hebrew University of Jerusalem

The creation of a good physics department in the newly established Hebrew University in Jerusalem (opened in 1925) was an important goal for Chaim Weizmann, President of the Zionist Organization and founder of the University (and chemist, by profession). A. H. Fraenkel, the mathematician, and L. S. Ornstein, the physicist from Utrecht, invested a lot of effort in achieving this goal. Albert Einstein was consulted on an almost day-to-day basis. Serious attempts were made to bring a first-rate theoretician to Jerusalem. After 1933, the chances for getting such a physicist were actually very good. George Placzek worked in Jerusalem during the academic year 1934–1935. Felix Bloch, Eugene Wigner, and Fritz London were offered positions as theoretical physicists in Jerusalem and considered the offers favorably. The discussions and correspondence with these great physicists are illuminating. Budget limitations, the problem of the teaching language (Hebrew) and the seclusion of Jerusalem from science centers in Europe or the United States undermined all these efforts. A solution was found when Giulio Racah from Italy finally was appointed.     

Exact Timing of Returned Molecular Wavepacket

An ionizing wavepacket of electron will re-visit its parent molecular ion during photoionization by strong laser field. This scenario is associated with physical concepts such as molecular re-scattering/collision, interference, diffraction, molecular clock, and generation of XUV light via high-order harmonic generation. On the workbench of a reduced dimensionality model of molecular hydrogen ions irradiated by laser pulse of 0.01-10.0 a.u. intensities, one-cycle pulsewidth, and 800nm wavelength, by deploying a momentum operator on the time-dependent wavefunction of an ionizing wavepacket, we can determine, in a precise manner, the exact time instant for the re-visiting electron to come back to the cation position. The time value is 57.6% of an optical cycle of the exciting laser pulse. This result may be useful in attosecond pump-probe experiments or molecular clock applications.     

The effect of Ehrlich-Schwoebel step-edge barrier on the formation of self-organized Si nanodots by ion-sputter erosion

The ion flux dependence of the self-organized Si nanodots induced by 1.5 keV Ar⁺ ion sputter erosion has been studied. It shows that for the regime with ion flux >∼280 μA/cm², the currently adopted Bradley-Harper (BH) model, which is incorporated in a dynamic continuum equation holds valid. However, for ion flux <∼280 μA/cm², the measured dot size and surface roughness deviate drastically from the BH model. To interpret the data for this lower ion flux regime, the effect of the Ehrlich-Schwoebel (ES) step-edge barrier was introduced into the continuum equation. A consistency between the calculated and the experimental results was reached, furthermore, a reasonable trend was found, that is, the effective ES diffusion decreases steadily with the increasing ion flux, and at ∼280 μA/cm², it became negligibly small.     

Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.