SnO2 thin films doped indium prepared by the sol–gel method: structure, electrical and photoluminescence properties

This paper reports on the preparation, characterization, electrical and optical properties of tin oxide (SnO₂) thin films doped indium prepared by the sol–gel method and deposited on glass substrates with dip coating technique. X-ray diffraction patterns showed an increase in the crystallinity of the films with increase in annealing temperatures. Atomic force microscopy analyses revealed an increase of grain growth with raise in annealing temperature. The film surface revealed positive skewness and kurtosis values less than 3 which make them favorable for OLEDs applications. The lowest resistivity (about 10^?7) was obtained for the ITO films annealed at 500 °C. These films acquire n-type conductivity due to the non-stoichiometric in the films like (interstitial tin atoms) and also due to low indium doping concentration. The optical properties of the films have been studied from transmission spectra. An average transmittance of >80 % in ultraviolet–visible region was observed for all the films. Optical band gap energy (E _gap) of ITO films was found to vary in the range of 3.69–3.81 eV with the increase in annealing temperature. This slight shift of E _gap to higher photon energies could be related to the crystalline nature of the films associated with the decrease in the defect concentration caused by annealing. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in annealing temperature. The high temperature annealing would be expected to decrease the density of defects, improve the crystal orientation and reduce the traps for non-radiative transition and also increase the oxidation processes.     

Photocatalytic action of ZnO thin films prepared by the sol–gel method

Nanostructured ZnO thin films were deposited on glass by the dip-coating sol–gel method. The films exhibited pronounced activity to destroy malachite green in water both under UV-light illumination and in the dark.     

Deposition of silica thin films formed by sol–gel method

Deposition of silica thin films on silicon wafer was investigated by in situ mass measurements with a microbalance configured for dip coating. Mass change was recorded with respect to deposition time when the substrate was fully immersed in the silica sol. Mass gain during deposition was higher than predicted from monolayer coverage of silica nano particles. This implied that deposition was facilitated by gelling of the nanoparticles on the substrate. The rate of deposition was enhanced by increasing the particle concentration in the sol and by decreasing the particle size from 12 to 5 nm. Increasing the salt concentration of the silica sol at constant pH enhanced the deposition of the silica particles. Reducing the pH of the sol from 10 to 6 decreased the deposition rate due to aggregation of the primary silica particles.     

Optical and structural properties of aluminium oxide thin films prepared by a non-aqueous sol–gel technique

Clear aluminium oxide sols without precipitation were synthesized via a non-aqueous sol–gel technique using three different alcohols (ethanol, isopropanol and n-butyl alcohol) as solvent, aluminium sec-butoxide as a precursor and acetyl acetone as a chelating agent. Although all sols could be successfully used to prepare thin films, the most stable one was prepared with n-butyl alcohol. Highly transparent, homogenous and amorphous aluminium oxide thin films were obtained on Si substrates after a heat treatment at 500 °C. X-Ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FT-IR) spectroscopy revealed all films were hydroxide free. The optical and structural properties of the films were particularly investigated. Any significant difference except from thickness on the film properties was not observed by changing the alcohol. Refractive index was used as an indication of the porosity of the films and ranged from 1.54 to 1.60.     

Improvement of electrical properties of sol–gel derived ZnO:Ga films by infrared heating method

In this study, we investigated the influences of gallium concentration and a rapid thermal annealing process on the electrical and optical properties of ZnO:Ga (GZO) films prepared by sol–gel method. Experimental data indicated that the preferential growth directions of ZnO crystallites were the (002) and (103) axes. This phenomenon implied that the nucleation and growth behaviors of ZnO crystallites were changed by the infrared heating procedure and monoethanolamine. Furthermore, since the deposited sol films were heated simultaneously, evenly, and rapidly, dopant material Ga got the opportunity to replace Zn instead of forming oxides embedded in grain boundary areas. Thus, carrier concentration of the GZO films can be considerably enhanced while the mobility of the GZO films was not apparently affected in our experiments. It was also found that the carrier concentration was not sensitive to Ga/Zn ratio even though higher Ga concentration led to lower mobility. The best sample with a resistivity of 2.20 × 10⁻³ Ω cm and a transmittance of over 80% in visible region was achieved with 1.0 at.% Ga.     

Synthesis and characterization of tellurium-doped CdO nanoparticles thin films by sol–gel method

In this work, tellurium (Te) doped CdO nanoparticles thin films with different Te concentrations (1, 3, 5, 7 and 10 %) were prepared by sol–gel method. The effects of Te doping on the structural, morphological and optical properties of the CdO thin films were systematically studied. From X-ray diffraction spectra, it has seen that all of thin films were formed polycrystalline and cubic structure having (111), (200) and (311) orientations. The structure of CdO thin films with Te-dopant was formed the unstable CdTeO₃ monoclinic structure crystal plane ( $ {\bar{\text{1}}\text{22}} $ 1 ¯ 22 ), however, the intensity of this unstable peak of the crystalline phase decreased with the increase of Te-doping ratio. The strain in the structure is also studied by using Williamson-Hall method. From FE-SEM images, it has seen that particles have homogeneously distributed and well hold onto the substrate surface. Additionally, grain size increases from 27 to 121 nm with the increase of Te-doping ratio. Optical results indicate that 1 % Te-doped CdO thin film has the maximum transmittance of about 87 %, and the values of optical energy band gap increases from 2.50 to 2.64 eV with the increase of Te-doping ratio. These results make Te-doped CdO thin films an attractive candidate for thin film material applications.     

Influence of the spin acceleration time on the properties of ZnO:Ga thin films deposited by sol–gel method

Journal of Sol-Gel Science and Technology - A detailed study of the structural, morphological, optical, and electrical properties of the spin-coated Ga-doped ZnO (GZO) films in which these...     

Influence of oxygen atmosphere on the photoluminescence properties of sol–gel derived ZrO2 thin films

Homogeneous and transparent ZrO₂ thin films were prepared by sol?Cgel dip coating method. The prepared ZrO₂ thin films were annealed in air and O₂ atmosphere at 500, 700 and 900?°C for 1, 5 and 10?h. X-Ray diffraction (XRD) pattern showed the formation of tetragonal phase with a change of stress in the films. Scanning electron microscope (SEM) revealed the nucleation and particle growth on the films. An average transmittance of >80?% (in UV?CVis region) was observed for all samples. The refractive index and direct energy band gap were found to vary as functions of annealing atmosphere, temperature and time. Photoluminescence (PL) revealed an intense emission peak at 379?nm weak emission peaks at 294, 586 and 754?nm. An enhancement of PL intensity was observed in films annealed in O₂ atmosphere. This is due to reconstruction of zirconium nanocrystals interfaces, which help passivate the non-radiative defects. At 900?°C, oxygen atoms react with Zr easily at the interface and destroy the interface states acting as emission centres and quench the PL intensity of the film. The enhancement of the luminescence properties of ZrO₂ by the passivation of non radiative defects presents in the films make it suitable for gas sensors development, tuneable lasers and compact disc (CD) read-heads.     

Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

The effects of Tb substitution on the structural and electrical properties of ferroelectric Bi₄Ti₃O₁₂ (BTO) thin films grown on Pt/TiO₂/SiO₂/Si substrates by a sol–gel process have been reported. X-ray diffraction indicated A-site Tb substitutions did not change the polycrystalline bi-layered Aurivillius structure of the BTO, but a lattice distortion was observed. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current density decreased from 10^?2 to 10^?4 A/cm² with the increase of x under 150 kV/cm. The remnant polarization (2P _r ) and dielectric constant (ε _r) increase firstly and then decreases with the increase of the Tb content. We observed a substantial increase in the remnant polarization (2P _r ) with Tb substitution and obtained a maximum value of~60 μC/cm² at an applied electric field of 500 kV/cm for x = 0.4. Moreover, this BTT-0.4 capacitor did not show fatigue behaviors after 1.0 × 10¹⁰ switching cycles, suggesting an anti-fatigue character.     

Preparation and properties of VO2 thin films by a novel sol–gel process

Vanadium dioxide (VO₂) thin films were fabricated using a simple and novel sol–gel process in which V₂O₅ was used as the vanadium source; oxalic acid was used as the reducing agent; and polyvinyl alcohol was used as the film former to control the viscosity of the VO₂ precursor solution and bond vanadium ions. The microstructure and surface morphology of VO₂ films were studied by X-ray diffraction and scanning electron microscopy, respectively. The results showed that using polyvinyl alcohol forms porous nanostructure of VO₂ films with a uniform grain size of ~25 nm. The measured optical reflectance shows well-defined phase transition as observed by an increase of reflectance upon heating above the transition temperature from ~11 to ~30 % at 1,100 nm. Upon cooling, the expected hysteresis is observed.     

Co-doped ZnO nanoparticles synthesized by an adapted sol–gel method: effects on the structural,optical, photocatalytic and antibacterial properties

Pure and Co-doped ZnO nanoparticles were synthesized with different cobalt levels (1–10 mol%) via adapted sol–gel method using water as solvent and characterized by X-ray diffraction, transmission electron microscopy, Raman spectroscopy and photoacoustic absorption spectroscopy. The results showed that all the samples have hexagonal wurtzite structure, with no evidence of any secondary phases until 10 mol% of the dopant. The average crystallite size of the samples was in the range of 25–50 nm, do not showing significant differences with the increase of the dopant level. However, the band gap energy of the nanoparticles decreases from 2.98 eV (pure ZnO) to 1.95 eV (10 mol% of Co). The photocatalytic activity of the samples was evaluated on the removal of methylene blue under visible light irradiation, which revealed an efficiency reduction by Co-doping ZnO. The antibacterial property was carried out indicating activity of the prepared samples against gram-positive bacteria.     

Structure and magnetic properties of La0.67Sr0.33MnO3 thin films prepared by sol–gel method

La_1?xSr_xMnO₃ (x = 0.33) (LSMO) thin films have been fabricated successfully by sol–gel method on two different types of substrates, Si (111) and SrTiO₃ (STO) (001). Microstructure and magnetic properties of LSMO thin films have been investigated. The X-ray diffraction studies of the films confirm the pure phase of the LSMO thin films. In contrast with LSMO thin films on Si substrate, the performances of LSMO on STO substrate are superior both from structural and magnetic properties. For the samples deposited on STO substrate, highly preferred orientation as well as less strain and grain defects was found; in other aspect, the magnetization, the residual and saturation moment value, tended greater while a decreased coercive field required merely (saturation moment value was about five times and coercive field was only about 13 % of those on Si substrate). The Curie temperature of LSMO thin films on Si and STO substrates is estimated to be about 349.7 and 359 K, respectively.     

The morphologies and optoelectronic properties of delafossite CuFeO2 thin films prepared by PEG assisted sol–gel method

Single phase delafossite CuFeO₂ thin films were synthesized by a simple sol–gel method. The influence of polyethylene glycol (PEG) on the morphology and optoelectronic properties of the films was studied by addition of 1.0 g PEG in 10 ml precursor solution. The crystal sizes of the derived CuFeO₂ films with and without addition of PEG were 49 nm, but the sample with addition of PEG (labeled as CFO-PEG) showed weaker c-axis orientation growth. The sample without addition of PEG (labeled as CFO) showed a compact surface without detectable pores and had a thickness around 50 nm. However, the sample CFO-PEG exhibited a porous surface with worm-like grains in nanometric scale and had a thickness around 310 nm. Enhanced absorbance in UV–vis region was observed for the sample CFO-PEG which might ascribe to both the thickness and porous surface. The optical direct bandgaps at near-UV were estimated to be ~3.0 and 3.38 eV for the sample CFO-PEG and CFO, respectively. Though the porous surface of CFO-PEG has improved the absorbance in UV–vis region, the resistivity has also been increased due to the homogeneous distribution of interspaces between the worm-like grains, which makes the incident photon to current efficiency of CFO-PEG lower than that of CFO.