共查询到15条相似文献,搜索用时 12 毫秒
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T-ZnO晶须化学镀铜复合粉体的制备及其电磁性能的研究 总被引:11,自引:0,他引:11
采用化学镀的方法制备了Cu包覆四脚状氧化锌晶须(T-ZnO晶须)的复合粉体.使用X射线衍射分析仪(XRD)进行了物象分析,扫描电镜(SEM)观察了粉体的形貌.运用能谱仪(EDS)进行了成份分析.结果表明,晶须为纯氧化锌,晶体结构为六方晶系纤锌矿结构,镀层为纯铜. SEM观察晶须外观形貌为四脚状结构.同时使用波导法对T-ZnO晶须和化学镀铜得到的Cu/T-ZnO晶须复合粉体进行了电磁参数的测量.微波电磁性能试验表明,化学镀后晶须的微波吸收性能明显增加,在频率为13 GHz处反射率可达-12 dB左右,而且最大吸收峰的频率随铜析出量的不同而发生改变,这样有利于实现吸收频带的展宽. 相似文献
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化学镀铜过程混合电位本质的研究 总被引:5,自引:0,他引:5
现场测量了铜基和陶瓷基化学镀铜过程混合电位-时间曲线(Emix-t),成功地检测到了化学镀诱发过程.考察了添加剂和络合剂的浓度以及pH值对Emix-t曲线的影响,结合阴、阳极极化曲线及双电层理论对各种影响因素进行了讨论.新生铜活化的铜基化学镀铜的诱发过程是一个缓慢激活过程,所对应的Emix-t曲线是一个稍微倾斜的台阶,这不同于钯活化的基体的诱发过程.通过对不同活化工艺的Emix-t曲线的比较,发现较高的活化温度能明显减少活化时间,而且还可加速诱发过程,从而提高化学沉积铜的速度. 相似文献
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以硼氢化钠为还原剂化学镀镍的电化学研究 总被引:1,自引:0,他引:1
采用线性电位扫描伏安法研究了以硼氢化钠为还原剂的化学镀镍体系, 考查了镀液组成及工艺条件对化学镀镍硼阴、阳极过程的影响, 结果表明: 乙酸镍和硼氢化钠含量的提高分别促进了Ni2+的还原反应和BH4-的氧化反应; 乙二胺、氢氧化钠以及添加剂硫脲、糖精钠对阴、阳极反应均有不同程度的抑制作用, 同时添加剂中的硫元素加速了镍的氧化; 升高温度有利于阴、阳极反应的进行. 相似文献
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A new method is described for the electroless deposition of copper onto glass.Commercially available glass slide was modified with γ-aminopropyltrimethoxysilane to form self-assembled monolayer (SAM) on it .Then it was dipped directly into PdCl2 solution instead of the conventional SnCl2 sensitization followed by PdCl2 activation.Experimental results showed that the Pd^2 ions from PdCl2 solution were coordinated to the amino groups on the glass surface resulting in the formation of N-Pd complex.In an electroless copper bath containin a formaldehyde reducing agent,the N-Pd complexes were reduced to Pd^0 atoms,which then acted as catalysts and initiated the deposition of copper metal.Although the copper deposition rate on SAM-modified glass was slow at the beginning,it reached to that of conventional method in about 5min. 相似文献
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利用循环伏安法和红外漫反射光谱法研究化学镀镍过程中丙酸的作用机理. 不同丙酸浓度下的循环伏安曲线表明,丙酸能同时促进Ni2+的还原和H2PO-2的氧化.根据丙酸分别与NaH2PO2和NiSO4共存时镍基体上吸附物的红外漫反射光谱变化,推断丙酸是通过与NaH2PO2和Ni2+形成表面络合物来促进化学沉积的. 丙酸能与NaH2PO2形成分子间氢键,促使P-H键断裂并生成·PHO-2中间物,从而提高H2PO-2的氧化速度; 同时,丙酸以其-OCO-官能团与Ni2+生成桥式配合物,有利于加速Ni2+的沉积. H2PO-2氧化速度的提高有助于磷的沉积,从而增大了化学镀层中的磷含量. 相似文献
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聚合物网络分散液晶复合膜的制备与性能研究 总被引:1,自引:0,他引:1
报道了一种新型树脂基的聚合物网络分散晶复合膜材料。研究了基体材料的组成,液晶种类,液晶含量,聚合温度,紫外光强度及聚合时间等聚合物网络分散液晶复合膜性能的影响。扫描电子显微镜观测,发现这种材料是由两个连相互穿构成了属于聚合物球型。 相似文献
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Gui‐Rong Zhang Sascha‐Dominic Straub Liu‐Liu Shen Yannick Hermans Patrick Schmatz Andreas M. Reichert Jan P. Hofmann Ioannis Katsounaros Bastian J. M. Etzold 《Angewandte Chemie (International ed. in English)》2020,59(41):18095-18102
The key to fully leveraging the potential of the electrochemical CO2 reduction reaction (CO2RR) to achieve a sustainable solar‐power‐based economy is the development of high‐performance electrocatalysts. The development process relies heavily on trial and error methods due to poor mechanistic understanding of the reaction. Demonstrated here is that ionic liquids (ILs) can be employed as a chemical trapping agent to probe CO2RR mechanistic pathways. This method is implemented by introducing a small amount of an IL ([BMIm][NTf2]) to a copper foam catalyst, on which a wide range of CO2RR products, including formate, CO, alcohols, and hydrocarbons, can be produced. The IL can selectively suppress the formation of ethylene, ethanol and n‐propanol while having little impact on others. Thus, reaction networks leading to various products can be disentangled. The results shed new light on the mechanistic understanding of the CO2RR, and provide guidelines for modulating the CO2RR properties. Chemical trapping using an IL adds to the toolbox to deduce the mechanistic understanding of electrocatalysis and could be applied to other reactions as well. 相似文献
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Electroless Deposition of Copper on Poly(tetrafluoroethylene) Films Modified by Plasma-Induced Surface Grafting of Poly(4-vinylpyridine) 总被引:1,自引:0,他引:1
Argon plasma-pretreated poly(tetrafluoroethylene) (PTFE) films were solution coated with a thin layer of poly(4-vinyl pyridine) (P4VP). Subsequent exposure of the films to argon plasma resulted in the grafting of P4VP on the PTFE films. Electroless plating of copper could be carried out effectively on the P4VP-grafted PTFE (P4VP-g-PTFE) surface after PdCl2 activation and in the absence of SnCl2 sensitization (the Sn-free process). The catalytic processes of the electroless plating of copper in the presence and absence of sensitization by SnCl2 were also compared. The effect of glow discharge conditions on the P4VP concentration and the adhesion strength of the electrolessly deposited copper was investigated. The T-peel adhesion strength of the electrolessly deposited copper with the graft-modified PTFE film was improved in the absence of SnCl2 sensitization and could reach about 3 N/cm. PdCl2 activation and electroless deposition of copper could not be carried out on the pristine or the Ar plasma-treated PTFE surface in the absence of prior sensitization by SnCl2. X-ray photoelectron spectroscopic (XPS) analysis revealed that the electrolessly deposited copper delaminated from the P4VP-g-PTFE film by cohesive failure inside the PTFE film. 相似文献