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本文讨论了非晶态Nd_xT_(1-x)(T=Fe,Co,Ni)薄膜为滋结构,以及在低温下磁化强度随温度变化的反常特性,在20K附近观测到磁化强度有陡降现象,并且在较大的成份范围内所对应的温度基本不变,我们认为,在这类非晶态合金中,当Nd含量超过一定值后,其磁中性态(通称基态)可能同时是散反铁磁性和散铁磁性的共存态,在20K附近的磁化强度发生陡降,是散反铁磁性←→顺磁性相转变的反映,这两种磁结构共存的临界成份相应约为:Nd-Fe情况x≥0.45;Nd-Co,x≥0.20;Nd-Ni,x≥0.08。 相似文献
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本文报道,通过对Y1-xCaxBa2Cu3-xMxO7-δ(M=Fe,Ni)体系样品的晶体结构、氧含量、正常态电阻率与温度的关系,以及超导转变温度等测量,并与YBa2Cu3-xMxO7-δ(M=Fe,Ni)体系进行比较,发现Y1-xCaxBa2Cu3-xFexO7-δ体系的Tc显著地高于相应x值的YBa2Cu3-xFexO7-δ体系,而Y1-xCaxBa2Cu3-xNixO7-δ体系则相反,Tc低于仅Ni替代的体系,表明Ca和Fe同时替代时两者引起的载流子浓度(nH)变化相互补偿,抑制了仅Fe替代时引起的nH和Tc急剧下降;而作Ca和Ni同时替代时主要的不是两者引起载流子浓度变化的相互补偿,Ca和Ni替代效应之间的关联较弱。作者认为,对Y1-xCaxBa2Cu3-xFexO7-δ体系属于CuO2平面外的元素替代,这时载流子浓度是决定Tc的主要因素;而对Y1-xCaxBa2Cu3-xNixO7-δ体系,由于Ni2+离子主要占据Cu(Ⅱ)位,它导致磁拆对效应,Ni2+离子的拆对效应是引起Tc下降的直接原因。关键词: 相似文献
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利用x射线衍射和磁测量研究了不同稳定元素Co以及Ti,V和Cr替代对Nd3Fe29-x-yCoxMy(M=Ti,V,Cr)化合物结构和磁性的影响.研究发现:每一个稳定元素都有一替代量极限,在此极限以内所有化合物均为Nd3(Fe,Ti)29型结构,A2/m空间群.不同稳定元素的溶解极限不同.Co的替代量与稳定元素有关,当以Cr作为稳定元素时,Cr的替代量随着Co含量的提高而提高关键词:3(Fe')\" href=\"#\">Nd3(FeCo29')\" href=\"#\">M)29结构磁性 相似文献
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For spin reorientation (SRT), the applications of sintering NdFeB permanent magnets are limited at low temperature. The sintering PrFeB permanent magnet (PM) presents no SRT and shows excellent magnetic properties at low temperature. The magnetic properties of bulk polycrystalline sintering Prl-xNdxFeB (x = 0 and 0.8 correspond to P42H and N50M respectively) are studied in this paper. The results show that magnetic properties and stability of N50M are better than those of 42H at room temperature. With the decrease of temperature, the parameters ofBr, Hcb, and Hci of P42H present a nearly linear increasing trend; Br and Hcb of N50M first increase and then decline, Hci presents an increasing trend. At 77 K, Br, Hci, and Jr of P42H are increased by 18.7%, 308%, and 17.1% respectively over than those at 300 K; at 120 K, Br, Hci, and Jr of N50M are increased by about 16.19%, 245%, and 12.6% respectively over than those at 300 K. The magnetic properties of P42H are better than those of N50M at low temperature. The sintering PrFeB is the preferred PM in various low-temperature devices. 相似文献