Boundary conformal field theory and tunneling of edge quasiparticles in non-Abelian topological states

We explain how (perturbed) boundary conformal field theory allows us to understand the tunneling of edge quasiparticles in non-Abelian topological states. The coupling between a bulk non-Abelian quasiparticle and the edge is due to resonant tunneling to a zero mode on the quasiparticle, which causes the zero mode to hybridize with the edge. This can be reformulated as the flow from one conformally invariant boundary condition to another in an associated critical statistical mechanical model. Tunneling from one edge to another at a point contact can split the system in two, either partially or completely. This can be reformulated in the critical statistical mechanical model as the flow from one type of defect line to another. We illustrate these two phenomena in detail in the context of the ν=5/2 quantum Hall state and the critical Ising model. We briefly discuss the case of Fibonacci anyons and conclude by explaining the general formulation and its physical interpretation.     

Quantum anomalous Hall effect and related topological electronic states

Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically doped topological insulator (TI) completed a quantum Hall trio—quantum Hall effect (QHE), quantum spin Hall effect (QSHE), and quantum anomalous Hall effect (QAHE). On the theoretical front, it was understood that the intrinsic AHE is related to Berry curvature and U(1) gauge field in momentum space. This understanding established connection between the QAHE and the topological properties of electronic structures characterized by the Chern number. With the time-reversal symmetry (TRS) broken by magnetization, a QAHE system carries dissipationless charge current at edges, similar to the QHE where an external magnetic field is necessary. The QAHE and corresponding Chern insulators are also closely related to other topological electronic states, such as TIs and topological semimetals, which have been extensively studied recently and have been known to exist in various compounds. First-principles electronic structure calculations play important roles not only for the understanding of fundamental physics in this field, but also towards the prediction and realization of realistic compounds. In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants will be given with focus on the QAHE and Chern insulators. We will introduce the Wilson loop method and the band inversion mechanism for the selection and design of topological materials, and discuss the predictive power of first-principles calculations. Finally, remaining issues, challenges and possible applications for future investigations in the field will be addressed.     

Gauge potential formulations of the spin Hall effect in graphene

Two different gauge potential methods are engaged to calculate explicitly the spin Hall conductivity in graphene. The graphene Hamiltonian with spin-orbit interaction is expressed in terms of kinematic momenta by introducing a gauge potential. A formulation of the spin Hall conductivity is established by requiring that the time evolution of this kinematic momentum vector vanishes. We then calculated the conductivity employing the Berry gauge fields. We show that both of the gauge fields can be deduced from the pure gauge field arising from the Foldy-Wouthuysen transformations.     

Valley Hall effect and Nernst effect in strain engineered graphene

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.     

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.     

Transverse electric field-induced quantum valley Hall effects in zigzag-edge graphene nanoribbons

We have investigated gapless edge states in zigzag-edge graphene nanoribbons under a transverse electric field across the opposite edges by using a tight-binding model and the density functional theory calculations. The tight-binding model predicted that a quantum valley Hall effect occurs at the vacuum-nanoribbon interface under a transverse electric field and, in the presence of edge potentials with opposite signs on opposite edges, an additional quantum valley Hall effect occurs under a much lower field. Dangling bonds inevitable at the edges of real nanoribbons, functional groups terminating the edge dangling bonds, and spin polarizations at the edges result in the edge potentials. The density functional theory calculations confirmed that asymmetric edge terminations, such as one having hydrogen at an edge and fluorine at the other edge, lead to the quantum valley Hall effect even in the absence of a transverse electric field. The electric field-induced half-metallicity in the antiferromagnetic phase, which has been intensively investigated in the last decade, was revealed to originate from a half-metallic quantum valley Hall effect.     

从分数量子霍尔效应到拓扑量子计算*

分数量子霍尔效应系统是奇异的量子液体,其中的准粒子激发可以带分数电荷,甚至具有非阿贝尔的统计性质。理论研究表明,这些准粒子可以用来实现在硬件上可容错的量子计算,即拓扑量子计算。文章在介绍分数量子霍尔效应及其在拓扑量子计算中的潜在应用基础上,重点回顾了近五年来对填充因子为5/2的分数量子霍尔态中非阿贝尔准粒子的实验探测和部分相关理论诠释。     

The stability of the fractional quantum Hall effect in topological insulators

With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some experiments have reported intra-Landau level structure that is suggestive of fractional quantum Hall effect. This paper discusses the feasibility of fractional quantum Hall effect from a theoretical perspective, and argues that while this effect should occur, ideally, in the n=0 and |n|=1 Landau levels, it is ruled out in higher |n| Landau levels. Unlike graphene, the fractional quantum Hall effect in topological insulators is predicted to show an interesting asymmetry between n=1 and n=−1 Landau levels due to spin-orbit coupling.     

The topological structure of the integral quantum Hall effect in magnetic semiconductor-superconductor hybrids

An unconventional integer quantum Hall regime was found in magnetic semiconductor-superconductor hybrids. By making use of the decomposition of the gauge potential on a U(1) principal fibre bundle over k-space, we study the topological structure of the integral Hall conductance. It is labeled by the Hopf index β and the Brouwer degree η. The Hall conductance topological current and its evolution is discussed.     

Bulk and edge properties of the Chern-Simons Ginzburg-Landau theory for the fractional quantum Hall effect

The Chern-Simons Ginzburg-Landau theory for the fractional quantum Hall effect is studied in the presence of a confining potential We review the bulk properties of the model and discuss how the plateau formation emerges without any impurity potential. The effect is related to changes, by accumulation of charge, at the edge when the chemical potential is changed. Fluctuations about the ground state are examined and an expression is found for the velocity of the massless edge mode in terms of the confining potential. The effect of including spin is examined for the case when the system is fully polarized in the bulk. In general a spin texture may appear at the edge, and we examine this effect in the case of a small spin-down component. The low-frequency edge modes are examined and a third-order equation is found for velocities which indicates the presence of three different modes. The discussions are illustrated by numerical studies of the ground states, both for the one- and two-component cases.     

Edge state propagation direction in the fractional quantum Hall regime: multi-terminal magnetocapacitance experiment

The propagation direction of fractional quantum Hall effect (FQHE) edge states has been investigated experimentally via the symmetry properties of the multi-terminal capacitances of a two-dimensional electron gas. Although strong asymmetries with respect to zero magnetic field appear, no asymmetries with respect to even denominator Landau level filling factor ν are seen. This indicates that current-carrying FQHE edge states propagate in the same direction as integer QHE edge states. In addition, anomalous capacitance features, indicative of enhanced bulk conduction, are observed at and .     

Modular invariant partition functions in the quantum Hall effect

We study the partition function for the low-energy edge excitations of the incompressible electron fluid. On an annular geometry, these excitations have opposite chiralities on the two edges; thus, the partition function takes the standard form of rational conformal field theories. In particular, it is invariant under modular transformations of the toroidal geometry made by the angular variable and the compact Euclidean time. The Jain series of plateaus have been described by two types of edge theories: the minimal models of the W_1+∞ algebra of quantum area-preserving diffeomorphisms, and their non-minimal version, the theories with affine algebra. We find modular invariant partition functions for the latter models. Moreover, we relate the Wen topological order to the modular transformations and the Verlinde fusion algebra. We find new, non-diagonal modular invariants which describe edge theories with extended symmetry algebra; their Hall conductivities match the experimental values beyond the Jain series.     

Spin polarization of two-dimensional electron system in different Laughlin states and around filling factor

The spin configuration of the ground state of a two-dimensional electron system is investigated for different FQHE states from an analysis of circular polarization of time-resolved luminescence. The method clearly distinguishes between fully spin polarized, partially spin polarized and spin unpolarized FQHE ground states. We demonstrate that FQHE states which are spin unpolarized or partially polarized at low magnetic fields become fully spin polarized at high fields. Temperature dependence of the spin polarization reveals a nonmonotonic behavior at . At and the electron system is found to be fully spin polarized. This result does not indicate the existence of any skyrmionic excitations in high magnetic field limit. However, at the observed spin depolarization of electron system at and becomes broader for lower magnetic fields, so that full spin polarization remains only in a small vicinity of . Such a behavior could be considered as a precursor of skirmionic depolarization, which would dominate for smaller ratios between Zeeman and Coulomb energies.We demonstrate that the spin polarization of 2D-electron system at and can be strongly affected by hyperfine interaction between electrons and optically spin-oriented nuclears. This result is due to the fact that hyperfine interaction can both enhance and suppress effective Zeeman splitting in fixed external magnetic field.     

Spin Chern numbers and time-reversal-symmetry-broken quantum spin Hall effect

The quantum spin Hall （QSH） effect is considered to be unstable to perturbations violating the time-reversal （TR） symmetry. We review some recent developments in the search of the QSH effect in the absence of the TR symmetry. The possibility to realize a robust QSH effect by artificial removal of the TR symmetry of the edge states is explored. As a useful tool to characterize topological phases without the TR symmetry, the spin-Chern number theory is introduced.     

Current distribution in the integer quantum Hall effect: The role of bulk states

The role of bulk and edge currents in a two-dimensional electron gas under the conditions of the integer quantum Hall effect (IQHE) was studied by means of an inductive coupling to Hall bar geometry. From this study we conclude that the extended states at the bulk of the sample below the Fermi energy are capable of carrying a substantial amount of Hall current. For Hall bar geometry sample with a back gate we demonstrated that injected current can be pushed from one edge to another by reversing the direction of the external magnetic field.     

On the photon-drag effect of photocurrent of surface states of topological insulators

The photocurrent of surface states of topological insulator due to photon-drag effect is computed, being based on pure Dirac model of surface states. The scattering by disorder is taken into account to provide a relaxation mechanism for the photocurrent. The Keldysh–Schwinger formalism has been employed for the systematic calculation of photocurrent. The helicity dependent photocurrent of sizable magnitude transverse to the in-plane photon momentum is found, which is consistent with experimental data. Other helicity independent photocurrents with various polarization states are also calculated.     

Quark confinement and the fractional quantum Hall effect

Working in the physics of Wilson factor and Aharonov-Bohm effect,we find in the fluxtubequark system the topology of a baryon consisting of three heavy flavor quarks resembles that of the fractional quantum Hall effect(FQHE)in condensed matter.This similarity yields the result that the constituent quarks of baryon have the"filling factor"1/3.thus the previous conjecture that quark confinement is a correlation effect is confirmed.Moreover,by deriving a Hamiltonian of the system analogous to that of FQHE,we predict an energy gap for the ground state of a heavy three-quark system.     

Electron–hole states in the fractional quantum Hall regime probed by photoluminescence

The electron–hole states in the fractional quantum Hall regime is investigated with a back-gated undoped quantum well by photoluminesccence in magnetic fields. The evolution of the photoluminescence spectra is discussed depending on the electron density. We find anomalies of the photoluminescence at the integer as well as the fractional filling factors.