Magnetic properties in the series TlV5−yMyS8 (M = Ti,V, Cr,Mn, Fe; O ≤y ≤ 1)

Single phased ternary vanadium sulfides with various 3d transition metal substitutes were prepared by thermal treatment and characterized by X-ray diffraction. Magnetic susceptibility measurements on the homogeneous powders reveal that itinerant and localized magnetism in all samples co-exists, due to the inequivalent vanadium sites in the structure. While the substitution of V with Ti to Mn has only a small effect on the magnetic properties, the substitution with Fe brings out a localized magnetic moment. The behaviour of the series will be discussed.     

The influence of 3d transition metal substitution on the magnetic properties of MnGaGe

A study has been made of the effect of 3d transition element substitution on the magnetic moment and Curie temperature of MnGaGe. Substitution of 3d elements with atomic number less than Mn (i.e. Ti, V, or Cr) cause relatively small changes in magnetic properties, whereas substitution of Fe, Co, Ni and Cu cause a large reduction in moment and Curie temperature, e.g. substitution of 5 at.% Fe for Mn causes the moment to decrease by 30 per cent. The moment and ferromagnetism of MnGaGe are described in terms of a band model involving both strongly correlated and intinerant 3d electrons. The effect of 3d element substitution may be qualitatively understood in terms of this model.     

YBa2(Cu0.95M0.05)3O7-δ的代换效应及其中子衍射研究

X射线衍射实验表明YBa₂(Cu_0.95M_0.05)₃O_7-δ(M=Ti,V,Cr,Mn,Fe,Co,Ni,Cu和Zn)均为单相结构。Fe,Co,Ni和Zn对Cu的替代使超导临界温度T_c显著下降,而同样含量的Ti,V,Cr,Mn对Cu的替代并未对超导性能产生显著影响。并利用中子衍射分析了Ti,Mn,Fe和Co对Cu原子的取代,发现代换原子对Cu的两个晶位各自存在不同的择优占据 关键词：     

非晶态Fe86M4Zr10合金的磁性和电性

本文研究了非晶态Fe₈₆M₄Zr₁₀(M=V,Cr,Mn,Fe,CO,Ni,Cu,B,Si)合金的基本磁性和低温电性,讨论了不同元素M的掺杂对FeZr合金居里温度和磁矩的影响,并用相干交换散射模型解释了样品在居里温度附近出现的电阻率极小。 关键词：     

Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

The electronic structures of titanium dioxide (TiO₂) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO₂ is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the O p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t_2g state of the dopant plays a significant role in the photoresponse of TiO₂ under visible light irradiation.     

Magnetic ordering in digital alloys of group-IV semiconductors with 3<Emphasis Type="Italic">d</Emphasis>-transition metals

The ab initio investigation of the magnetic ordering in digital alloys consisting of monolayers of 3d-transition metals Ti, V, Cr, Mn, Fe, Co, and Ni introduced into the Si, Ge, and Si_0.5Ge_0.5 semiconductor hosts is reported. The calculations of the parameters of the exchange interactions and total-energy calculations indicate that the ferromagnetic order appears only in the manganese monolayers, whereas the antiferromagnetic order is more probable in V, Cr, and Fe monolayers, and Ti, Co, and Ni monolayers are nonmagnetic. The stability of the ferromagnetic phase in digital alloys containing manganese monolayers has been analyzed using the calculations of magnon spectra.     

Modulation of magnetic properties of bilayer SnSe with transition-metals doping in the interlayer

We investigate the spin-polarized electronic and magnetic properties of bilayer SnSe with transition-metal (TM) atoms doped in the interlayer by using a first-principles method. It shows that Ni dopant cannot induce the magnetism in the doped SnSe sheet, while the ground state of V, Cr, Mn, Fe and Co doped systems are magnetic and the magnetic moment mainly originates from 3d TM atom. Two types of factors, which reduce the magnetic moment of TM atoms doped in bilayer SnSe, are identified as spin-up channel of the 3d orbital loses electrons to SnSe sheet and spin-down channel of the 3d orbital gains electrons from 4s orbital. The spin polarization is found to be 100% at Fermi level for the Mn and Co atoms doped system, while the Ni-doped system is still a semiconductor with a gap of 0.26 eV. These results are potentially useful for development of spintronic devices.     

非晶态合金FeTmB的磁矩和居里温度

本文系统地报道单辊液淬方法制备FeTmB(Tm=Ti,V,Cr,Mn,Zr,Nb,Mo,Ta,W)非晶态合金的磁性,讨论了3d,4d,5d元素的加入对非晶态FeB合金的磁矩和居里温度的影响。实验结果表明在非晶态FeTmB合金系中Fe原子磁矩都在2.0μ_B左右。Tm原子在非晶态Fe基合金中比在相应的晶态合金中显示更强的局域特性。Tm原子的磁矩与元素的外层电子数有关,IVB(Ti),VB(V),VIB(Cr),VIIB(Mn)族原子的磁矩分别约为4,5,4,3μ_B,Tm的磁矩与铁原子磁矩反平行耦合。合金磁矩随Tm含量的变化率dμ/dx与混合模型的计算值相符合。用虚拟束缚态讨论,得到IVB(Ti),VB(V)族元素的虚拟束缚态在费密面以上,VIB(Cr),VIIB(Mn)族元素的虚拟束缚态与费密面交迭。 关键词：     

Limits of solubility,magnetic properties and electron concentration in Fe3-xTxSi system

The role of the outer electrons on the limits of solubility and bulk magnetic properties of the system Fe_3-xT_xSi (T - Ti, V, Cr, Mn, Co, Ni) is investigated. A correlation with the magnetic and structural behavior of Fe_1-cSi_c and Fe_1-cAl_c alloys is demonstrated.     

The effect of 3d-transition metal solutes on the ferrimagnetism of Fe7Se8

The effect of 3d-transition metal solutes on the magnetization of Fe₇Se₈ has been investigated by studying two series of alloys with constant solute concentrations of 3 and 10 at%, respectively. Small additions of Ti and V were sufficient to reduce the magnetization by one order of magnitude, whereas Ni slightly increased the magnetization. The changes due to the presence of Cr, Mn and Co were less noticeable. In certain cases the thermal treatment turned out to be a decisive factor in determining the type of magnetism. Alloys with Cr quenched from 1070 K were clearly antiferromagnetic. Quenched samples containing ten percent Ti were paramagnetic following a Curie-Weiss type law, but slow cooling from 1070 K reestablished the ferrimagnetic state. Order-disorder phenomena were assumed to be responsible for the changes due to the thermal treatment.     

Magnetic properties of intercalation compounds MxTiS2 (M = 3d transition metal)

Magnetization measurements have been made on 3d transition-metal intercalation compounds of M_xTiS₂ (M = V, Cr, Mn, Fe, Co and Ni; 0 ⩽ x ⩽ 1) at 4.2, 77 and 300 K in static fields up to 20 kOe and in pulsed fields up to 160 kOe. The ac magnetic susceptibility measurements in dc fields have also been made for Fe_xTiS₂. We have identified various types of magnetic phases in M_xTiS₂, such as paramagnetic, spin-glass, cluster-glass or mictomagnetic, and ferromagnetic ones, depending on the kind of guest 3d metals and their concentrations. Magnetic properties of these materials can be understood in terms of an itinerant or band picture rather than a localized or rigid band model.     

Band structure calculations for Heusler phase Co2YBi and half-Heusler phase CoYBi (Y=Mn, Cr)

We have studied the electron structure and magnetic properties of Heusler phase Co₂YBi and half-Heusler phase CoYBi (Y=Mn, Cr) by using the full-potential linearized-augmented plane-wave (FLAPW) method. Co₂MnBi and Co₂CrBi are predicted to be half-metallic magnetism with a total magnetic moment of 6 and 5 μ_B, respectively, well consistent with the Slater-Pauling rule. We also predict CoMnBi to be half-metallic magnetism with a slight compression. The gap origin for Co₂MnBi and Co₂CrBi is due to the 3d electron splitting of Mn (Cr) and Co atoms, and the gap width depends on Co electron splitting. The atom coordination surroundings have a great influence on the electron structure, and consequently the Y site in the X₂YZ structure has a more remarkable electron splitting than the X site due to the more symmetric surroundings. The investigation regarding the lattice constant dependence of magnetic moment shows that the Co magnetic moment exhibits an opposite behavior with the change of the lattice constant for Heusler and half-Heusler alloys, consequently leading to the different variation trends for total magnetic moment. The variation of total and atom magnetic moment versus lattice constant can be explained by the extent of 3d electron splitting and localization of Mn (Cr) and Co atoms for both the series of alloys.     

Structural, electronic and magnetic properties of Mn, Co, Ni in Gen for (n=1-13)

The structural, electronic and magnetic properties of TMGe_n (TM=Mn, Co, Ni; n=1-13) have been investigated using spin polarized density functional theory. The transition metal (TM) atom prefers to occupy surface positions for n<9 and endohedral positions for n≥9. The critical size of the cluster to form endohedral complexes is at n=9, 10 and 11 for Mn, Co and Ni respectively. The binding energy of TMGe_n clusters increases with increase in cluster size. The Ni doped Ge_n clusters have shown higher stability as compared to Mn and Co doped Ge_n clusters. The HOMO-LUMO gap for spin up and down electronic states of Ge_n clusters is found to change significantly on TM doping. The magnetic moment in TMGe_n is introduced due to the presence of TM. The magnetic moment is mainly localized at the TM site and neighbouring Ge atoms. The magnetic moment is quenched in NiGe_n clusters for all n except for n=2, 4 and 8.     

Crystal and magnetic structure of the CoMn1−xTixSi system

The magnetic and crystallographic nature of the compounds CoMn_1?xTi_xSi (0?x?0.5) is studied by X-ray, neutron diffraction and magnetometric measurements. It is shown that the solid solutions arise for 0?x?0.5, with the crystal structure of the NiTiSi type. All compounds are antiferromagnets. The magnetic moment localized on Mn and Co atoms forms a double spiral in both sites. The dilution of the Mn sublattice by Ti atoms change only slightly the magnetic properties - Néel temperature and parameters of magnetic structure.     

Dual nature of electron spin resonance in YbCo2Zn20 intermetallic compound

In single crystals of YbCo₂Zn₂₀ intermetallic compound, two coexisting types of electron spin resonance signals related to the localized magnetic moments of cobalt and to itinerant electrons have been observed in the 4.2–300 K temperature range. It is shown that the relative contribution of itinerant electrons to the total magnetization does not exceed 9%. We argue that the electron dynamics in YbCo₂Zn₂₀ and YbCuAl heavy fermion systems is determined by the effects produced by the magnetic subsystem of the localized 3d-electrons. We also discuss general aspects of the electron spin resonance spectroscopy in underdoped ytterbium-based intermetallics and the spectral manifestations of the interplay between the efficiency of the hybridization of f-electrons with the electrons filling outer atomic shells, crystal field effects, and the effects related to the proximity to the quantum critical point.     

Antiferromagnetism of the α-Mn system

The variation of the Néel temperature (T_N) of antiferromagnetic alloys of Mn with 3-d elements has been studied by electrical resistivity measurements. Binary Mn-rich alloys Fe, Co, Ni, Ti, Rh, Os, Ir, and Ru were investigated. The results show a strong and systematic dependence on the number of d-electrons of the impurity element. Elements with more d electrons than Mn raise T_N, while those with fewer d electrons depress T_N. The change of T_N per atomic percent impurity also exhibits a striking, non-monotonic dependence on the impurity used. The dependence shows inversion symmetry with impurities around Mn.To further elucidate the properties of the Mn-rich antiferromagnetic system, a study was made of ternary Mn-rich alloys in the MnFeCr, MnCoNi, and MnVTi systems. The results from the MnFeCr system are consistent with the rigid-band model, the average number of d-electrons per atom being of primary importance determiningh the antiferromagnetism in this system.Our goal in these studies has been to provide a firm experimental data baseupon which future theoretical work can be built. A more detailed understanding of the very intriguing α-Mn magnetic system now awaits further theoretical investigation.     

Low temperature specific heat and magnetization of (Fe1-xTx)Be2

Low temperature specific heat and magnetization results on (Fe_1-xT_x)Be₂ with T= V, Cr, Mn, Co and Ni are presented. The interpretation of these results is based on the virtual bound states concept.     

Features of hydrogen interaction in the Pd-based alloys with 3d transition metals

The effect of an alloying metal and its magnetic state on the hydrogen absorption energy has been investigated in the Pd-based alloys Pd₃Me with 3d transition metals (Me = Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) using calculations from first principles. The full-potential and linearly augmented plane wave (FP LAPW) method has been used in the local density approximation (LDA) for the exchange-correlation potential in the framework of the density functional theory (DFT). It has been found that the hydrogen solubility in an alloy increases if the centers of mass of s and d metal bands and s hydrogen band shift strongly toward the Fermi level. The changes in properties of hydrogen absorption as a function of its position in a crystal lattice structure and magnetic state of an alloy have been analyzed.     

TM掺杂的Ⅲ-Ⅴ族稀磁半导体电磁性质的第一原理计算

使用基于自旋局域密度泛函理论的第一性原理方法对3d过渡金属(TM=V，Cr，Mn，Fe，Co和Ni)掺杂的Ⅲ-Ⅴ族半导体(GaAs和GaP)的电磁性质进行了计算.结果发现：用V，Cr和Mn掺杂时体系将出现铁磁状态，而Fe掺杂时将出现反铁磁状态，Co和Ni掺杂时，其磁性则不稳定.其中，Cr掺杂的GaAs和GaP将可能是具有较高居里温度的稀磁半导体(DMS).在这些DMS系统中，V离子的磁矩大于理论期待值，Fe，Co和Ni离子的磁矩小于理论期待值，Cr和Mn离子的磁矩与期待值的差距取决于晶体的对称性以及磁性离子的能带分布.此外，使用Si和Mn共同对Ⅲ-Ⅴ族半导体进行掺杂，将有利于DMS表现为铁磁状态，并可以使体系的T_C进一步提高. 关键词： 稀磁半导体 过渡金属 掺杂 共掺杂     

Vanadium-doped MgAl2O4 crystals as white light source

Spinel MgAl₂O₄ crystals doped with transition metals show charge-transfer transitions for Ti:MgAl₂O₄ on one hand and multiplet transitions of (3d)-electrons for Mn:, Fe:, and Co:MgAl₂O₄ on the other hand. We will show that optical responses of V:MgAl₂O₄ are closer to those of Ti:MgAl₂O₄ and also that white emission spectrum is observed. The microscopic process of the white emission is also proposed.