Luminescence centers in thin films of lead and bismuth tungstates

Luminescence spectra of thin films of PbWO₄ and Bi₂WO₆ are invesigated. The Alentsev-Fock method is used to separate the spectra into elementary components. The emission bands with maxima at 2.8 eV in PbWO₄ and at 2.93 eV in Bi₂WO₆ luminescence spectra are interpreted as the emission of self-localized Frenkel excitons. The bands with maxima at 2.35 and 1.75 eV in PbWO₄ and at 2.35 and 1.9 eV in Bi₂WO₆ are related to oxygen vacancies. L’vov State University, 50, Dragomanov St., L'vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 143–145, January–February, 1998.     

Luminescence centers in Sc2O3

Sc₂O₃ luminescence spectra are studied. The spectra are separated into elementary bands by the Alentsev–Fock method. It is established that the luminescence spectra consist of a number of overlapping bands with maxima at 3.5; 3.05; 2.65; 2.35, and 2.05 eV. The band at 3.5 eV is interpreted as emission of self-localized excitons, and the other bands, as defect-center recombination. L’vov State University, 50, Dragomanov St., L’vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 6, pp. 776–778, November–December, 1997.     

Luminescence centers in thin films of yttrium oxide and yttrium-aluminum garnet activated with bismuth

Luminescence spectra and photoluminescence excitation spectra of Y₂O₃:Bi and Y₃Al₅O₁₂:Bi thin films were investigated. Luminescence was stimulated by the emission from two types of centers that were associated with the substitution of Bi³⁺ for Y³⁺ in sites of the crystal lattice of Y₂O₃ (Y₃Al₅O₁₂) with point symmetries C₂ and C_3i (D₂ and C_3i). The emission of Bi³⁺ in the site with point symmetry C_3i causes blue luminescence in both Y₂O₃:Bi and Y₃Al₅O₁₂:Bi films with maxima at 3.03 eV and 3.15 eV, respectively, that is related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry C₂ gives green luminescence in Y₂O₃:Bi with the maximum at 2.40 eV that is also related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry D₂ leads to ultraviolet luminescence in Y₃Al₅O₁₂:Bi with the maximum at 3.75 eV that corresponds to the ³P₁-¹S₀ transition. The red luminescence band with the maximum at 1.85 eV in Y₂O₃:Bi is due to the presence of structural defects. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 202–207, March–April, 2008.     

Luminescence centers in silicate and germanate glasses activated by bismuth

Concentration series of silicate and germanate glasses activated by bismuth are studied. It is shown that luminescence in the IR region is controlled by several active centers related to bismuth. Based on a comparison of spectroscopic characteristics of the studied glasses with the data previously obtained for chloride glass, the observed centers were identified as Bi⁺, Bi ₂ ⁴⁺ , and Bi ₅ ³⁺ in germanate glass and Bi⁺, Bi ₂ ⁴⁺ in silicate glass.     

Luminescence centers in ceramics of yttrium, scandium, and bismuth oxytungstates

An investigation is made of the luminescence spectra of Me₂WO₆ ceramics (Me=Y, Sc, Bi). The spectra were decomposed into elementary components by the Alentsev—Fock method. Radiation hands with a maximum at 3.02 eV in the Y₂WO₆ luminescence spectrum, at 2.8 eV in the ScWO₆ spectrum, and at 2.93 eV in the Bi₂WO₆ spectrum are assigned to the light emission of self-localized Frenkel excitons. The bands with maxima at 2.25 and 1.75 eV in the Y₂WO₆ spectrum, at 2.36 and 1.9 eV in the Sc₂WO₆ spectrum, and at 2.35 and 1.9 eV in the Bi₂WO₆ spectrum are related to oxygen vacancies. Translated from Zhurnal Prikladnoi Spektroskopii, Vol 67, No. 2, pp. 273–275, March–April, 2000.     

Thermally stimulated luminescence of bismuth germanate ceramics with the benitoite,eulitine, and sillenite structures

Thermally stimulated luminescence (TSL) of Bi₂Ge₃O₉, Bi₄Ge₃O₁₂, and Bi₁₂GeO₂₀ and the primary components Bi₂O₃ and GeO₂ was studied under x-ray excitation. Thermal activation energies and frequency factors of trapping centers in the studied ceramics were determined. The relationships of TSL bands of the studied ceramics with maxima at 141–145 and 166–170 K and damage to the Ge sublattice and of TSL bands with maxima at 104–110 and 180–190 K and recombination processes in the Bi sublattice were demonstrated. Recombination processes causing luminescence upon nonequilibrium charge carrier release from trapping centers occur in structural complexes of similar configuration that contain the Bi ion in a nearest environment of O atoms. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 359–364, May–June, 2008.     

Influence of Oxygen Vacancies on the Luminescence Spectra of Y2O3 Thin Films

Luminescence spectra of Y₂O₃ thin films annealed in air and in vacuum are investigated. It is established that the presence of oxygen vacancies leads to a decrease in the intensity of the luminescence band with a maximum at 3.4 eV (related to emission of selflocalized Frenkel excitons describing the excited state of a molecular ion (YO₆)^9–) and of the luminescence band with a maximum at 2.9 eV (related to the anion sublattice). It is revealed that the oxygen vacancies also lead to a decrease in the luminescence intensity in the 2.60, 2.35, 2.10. 1.90, and 1.70 eV bands that are related to radiative recombination in the donor–acceptor Y³⁺–O^2– pairs. The donor–acceptor distances are calculated.     

Luminescence centers in bismuth-containing oxytungstate ceramics

We have studied the photoexcitation and luminescence spectra of Bi₂WO₆, Y₂WO₆ and Y₂WO₆:Bi ceramics. We used the Alentsev-Fock method to decompose the spectra into elementary components. The emission bands with maximum at 2.93 eV in the luminescence spectrum of Bi₂WO₆, 3.02 eV in the luminescence spectrum of Y₂WO₆, and 2.95 eV in the luminescence spectrum of Y₂WO₆:Bi are assigned to luminescence of self-localized Frenkel excitons. The bands with maxima at 2.35 eV and 1.90 eV in the spectrum of Bi₂WO₆, 2.25 eV and 1.75 eV in the spectrum of Y₂WO₆, and 2.35 eV and 1.85 eV in the spectrum of Y₂WO₆:Bi are connected with oxygen vacancies. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 688–691, September–October, 2007.     

Vibrational spectra of a single crystal of lead germanate and the effect of RS amplification on its surface

For single crystal wafers of lead germanate cut perpendicularly to the C-axis an investigation has been made of IR transmission and RS spectra atλ _exc =632.8, 514.5, and 488 nm in the spectral range of 400–1800 cm⁻¹. An interpretation of the spectra recorded is suggested. In the RS spectra specific features of line intensity distributions are detected. The dependences of the intensity distribution in the peculiarities detected on the excitation wavelength and the angle of incidence of exciting radiation and transmission of the reflected exciting laser beam relative to the optical axis of illumination of the spectrometer inlet slit are investigated. The reason for the occurrence of these specific features is suggested: the interference of RS radiation and exciting laser radiation diffracted on the non-working narrow sides of the diffraction gratings of the spectrometer. The possibilities of amplifying the spectral lines in the RS spectra by imposing diffracted one-mode exciting radiation on them are discussed. Translated from zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 2, pp. 220–226, March–April, 1999.     

Thermally stimulated luminescence of yttrium oxide in a transparent dielectric medium

The thermally stimulated luminescence of Y₂O₃ in contact with a dielectric is investigated. The measurements were carried out in an atmosphere of dry air, in glycerol, ethylene glycol, and water. Shifting of the spectrum of thermally stimulated luminescence and decrease in the luminescence intensity with an increase in the dielectric constant of the medium were revealed. A discussion of the results is presented. I. I. Mechnikov Odessa State University, 2, Dvoryanskaya St., Odessa, 270026, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 462–463, May–June, 1998.     

Luminescence of Thin Bismuth Germanate Films Having the Structure of Eulitine and Benitoite

The luminescence and luminescence excitation spectra of thin films of Bi₄Ge₃O₁₂ and Bi₂Ge₃O₉ were investigated. The spectra were decomposed into elementary components by the Alentsev-Fok method. It has been established that the luminescence spectra of thin Bi₄Ge₃O₁₂ and Bi₂Ge₃O₉ films have a similar structure and that each contains three luminescence bands with maxima at 2.70, 2.40, and 2.05 eV and at 2.73, 2.40, and 1.95 eV, respectively. Comparison of the results obtained with the well-known results of investigation of the luminescence of Bi₁₂GeO₂₀ and Bi₂O₃ suggests that the luminescence in the compounds considered is caused by the radiation processes that proceed in structural complexes of similar configuration that contain the bismuth ion in the nearest oxygen environment. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 3, pp. 377–380, May–June, 2005.     

Luminescence study of alumina nanopowders prepared by various methods

Mixed nanopowders of transition alumina prepared by combustion synthesis and phase pure ultra-porous α-alumina by oxidation method were investigated using low temperature time-resolved cathodoluminescence and photoluminescence spectroscopy under VUV-XUV excitation. In all samples along with the 7.6 eV emission of self-trapped excitons of α-alumina, luminescence bands due to F, F⁺ centres with maxima at 3 and 3.8 eV and other UV–visible luminescence bands of intrinsic and extrinsic origin with varying intensity depending on sample preparation method and thermal treatment were studied. In alumina nanopowders the excitonic excitation peak at ∼9.1 eV near fundamental absorption edge is shifted to the higher energies by 0.15 eV in comparison with the same feature in single crystals. The nanostructure of alumina is responsible for this shift.     

Luminescence of color centers formed in alkali-earth-doped yttrium orthoaluminate crystals

Alkali-earth-doped yttrium orthoaluminate crystals grown in a reducing atmosphere are found to show bright photoluminescence (PL) in visible wavelength regions under the excitation by UV light source. From the results of transmission, PL, PL excitation and time-resolved PL spectra for the samples with different types and concentrations of dopants and the comparison to the results for the samples grown under different conditions, the origin of principal emission is determined to be color centers stabilized by heterovalent ions. The observed fast lifetime and high quantum yield of the luminescence can be explained by dipole-allowed transition between the levels localized in a vacancy. Comparing the effects on the optical properties from several types of dopant ions and taking influence from the UV irradiation into account, a model for the structure of emission centers is proposed.     

X-Ray Luminescence of Defects in Spinel Single Crystals

The flareup of x-ray luminescence in spinel single crystals (MgAl₂O₄) depending on the time of x-ray irradiation and the decay of fluorescence depending on the time elapsed after the termination of irradiation have been investigated. These dependences were measured at different powers of the irradiation dose (power of the x-ray tube) and at different temperatures of the samples. The experimental results suggest the existence of large-size complexes of defects, which include antisite defects and impurity ions, the exchange of charge carriers between which during and after irradiation leads to luminescence of the impurity ions. Transfer of charge carriers between isolated elements of the pairs of antisite defects (not interacting with the impurity ions) leads to the formation of a competing channel of recombination luminescence in the UV region of the spectra. The decay of fluorescence attributable to transitions in the Mn²⁺ and Cr³⁺ ions depending on the time elapsed after the termination of x-ray irradiation points to the existence of various combinations of antisite defects in the surroundings of these ions.     

Luminescence excitation spectra and characteristics of luminescence centers with overlapping absorption bands

For an ensemble of different types of luminescence centers with overlapping absorption bands, with no restrictions on the optical densities, we have obtained relations describing the luminescence excitation spectra for each type of center. We consider transformations of the relations in some limiting cases. We suggest a procedure for using the equations obtained to determine the characteristics of the luminescence centers. Some of these procedures have been experimentally implemented in study of intrinsic radiation color centers in lithium fluoride crystals. We have determined the ratios of the luminescence quantum yields for F₂ and F₃⁺ color centers, and we have observed that a major role is played by nonradiative transitions in deactivation of the first excited singlet state of F₃⁺ centers. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 365–371, May–June, 2008.     

共掺Na~ 的Yb~(3 )∶CaF_2晶体的荧光分析与低阈值激光运转

基于975nm激发的室温下荧光光谱测量,系统地研究了在新型钠、镱共掺的氟化钙晶体中钠离子的作用机理,分析了掺钠离子浓度与激光阈值的关系,获得了具有最低激光阈值的掺杂浓度优化配比.激光实验表明对于2%Yb3 离子浓度的氟化钙,掺入3%的钠离子能够获得最低阈值的激光运转,这与理论和荧光分析完全一致.     

Luminescence centers in cubic boron nitride

Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385–400 nm and 365–395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300–350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 2, pp. 241–246, March–April, 2007.     

GaN薄膜的蓝光和红光发射机理研究

由于生长工艺的不完善,非掺杂GaN薄膜中通常存在未知的杂质和缺陷,产生与这些未知杂质和缺陷能级相关的发光。报道了非掺杂GaN薄膜的692nm红色发光．并研究了非掺杂GaN薄膜的蓝、红色发光的发射机理;利用作者提出的吸收归一化光致发光激发光谱,直接测量出了非掺杂GaN薄膜的蓝、红色发光的初始态能级,确定蓝色发光为施主-价带跃迁复合,而红色发光为施主-受主跃迁复合;给出了黄、蓝、红光的发射模型。所取得的结果对于确定未知杂质和缺陷的种类具有重要的参考价值。     

一种钌配合物与DNA相互作用发光增强的超快过程研究

采用时间分辩激光光谱技术,研究了一种钌配合物[Ru(dmb)2(mitatp)]2 发光增强的超快过程。采用比较方法测量了[Ru(dmb)2(mitatp)]2 和[Ru(dmb)2(mitatp)]2 /DNA复合物的瞬态发光弛豫过程。[Ru(dmb)2(mitatp)]2 和[Ru(dmb)2(mitatp)]2 /DNA复合物的发光均来源于[Ru(dmb)2(mitatp)]2 中的电荷转移单态和三重态到基态的辐射跃迁。通过钌配合物与DNA的相互作用,[Ru(dmb)2(mitatp)]2 的荧光寿命由339 ns延长至589 ns;磷光寿命由16μs延长至21μs,总的发光强度增强了约1个数量级。分析表明,[Ru(dmb)2(mitatp)]2 发光寿命和发光强度的增加可能来源于[Ru(dmb)2(mitatp)]2 与DNA之间的电荷转移态的形成,它导致[Ru(dmb)2(mitatp)]2 的最低激发单态和三重态到基态的无辐射概率的减小,增强了[Ru(dmb)2(mitatp)]2 发光效率。