Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide

The Hall effect, the electric conductivity, and the photoluminescence spectra of electron irradiated (E=1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2) nuclear-transmutation-doped n-GaAs crystals and crystals of n-GaAs doped by the standard metallurgical method were investigated. The energy spectrum of the radiation-induced defects, determined from the Hall effect and DLTS spectra [E1–E5 traps with ionization energy 0.08, 0.14, 0.31, 0.71, and 0.9 eV, respectively (from the bottom of the C band)], is the same in nuclear-transmutation-doped and standard GaAs and satisfactorily describes the experimental dependence n(D). The rate of introduction of traps E1, E2 decreases as n₀ increases (from 1.3 cm^–1 in GaAs with n₀ — 10¹⁷ cm^–3 to 0.7 cm^–1 in GaAs with n₀ 10¹⁸ cm^–3). The rate of removal of charge carriers () increases as n₀ increases, irrespective of the method of growth and doping of GaAs. The isovalent impurity In in nuclear-transmutation-doped gallium arsenide with N_In 10¹⁸ cm^–3 decreases .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 45–51, April, 1991.     

Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

We report structural and optical properties of In_0.5Ga_0.5As/GaAs quantum dots (QDs) in a 100 Å-thick In_0.1Ga_0.9As well grown by repeated depositions of InAs/GaAs short-period superlattices with atomic force microscope, transmission electron microscope (TEM) and photoluminescence (PL) measurement. The QDs in an InGaAs well grown at 510 °C were studied as a function of n repeated deposition of 1 monolayer thick InAs and 1 monolayer thick GaAs for n=5–10. The heights, widths and densities of dots are in the range of 6–22.0 nm, 40–85 nm, and 1.6–1.1×10¹⁰/cm², respectively, as n changes from 5 to 10 with strong alignment along [1 −1 0] direction. Flat and pan-cake-like shape of the QDs in a well is found in TEM images. The bottoms of the QDs are located lower than the center of the InGaAs well. This reveals that there was intermixing—interdiffusion—of group III materials between the InGaAs QD and the InGaAs well during growth. All reported dots show strong 300 K-PL spectrum, and 1.276 μm (FWHM: 32.3 meV) of 300 K-PL peak was obtained in case of 7 periods of the QDs in a well, which is useful for the application to optical communications.     

Far infrared surface electromagnetic waves propagation on A3B5 semiconductors

The real and imaginary parts of surface electromagnetic waves (SEW) refraction index n_ef in n-type InSb, GaAs and InP have been measured in FIR region (=85–142 cm^–1). The n_ef measurements allowed to determine plasma frequency _p and plasmon damping . The obtained nonlinear SEW propagation distance L dependence on Te impurity concentration in GaAs (N=10¹⁷–10¹⁹ cm^–3) was explained taking into account the conduction band nonparabolity as well as the presence of isostructural phase transition at N=2×10¹⁰ cm^–3.     

XeCl-laser-generated ablation products from a nitrogen-rich polymer studied by laser-ionization mass spectrometry

Laser-ionization time-of-flight mass spectrometry has been used to probe laser-ablation products from a nitrogen-rich polymer at a wavelength of 308 nm. The ablation products at a laser fluence of 150 mJ/cm² showed, similar to 532 nm ablation studied previously [18], two strong peaks due to neutral species that were assigned to C⁺ and CN⁺, as well as several weak peaks that were assigned to CH⁺, HCN⁺, HCNH⁺, H_nN–CN⁺ (n=1–3), and H₂N–C=N–CN⁺ or H₂N–C=N–CN⁺. The ablation products at 870 mJ/cm² revealed, in addition to a broad signal due to ionic products generated directly by the ablation laser, several peaks due to neutral products that were assigned to C⁺, C ₂ ⁺ , C ₃ ⁺ , CN⁺, HCN⁺, HCNH⁺, and NCCN⁺. The most probable flight velocities for major neutral products are 5.7×10⁴ cm/s at 150 mJ/cm² and 2.3–2.7×10⁴ cm/s at 870 mJ/cm². The results at a laser fluence of 150 mJ/cm² support the finding that the translational energy of the tragments has importance for the collision-induced product generation in the laser plume, as suggested earlier [18]. Furthermore, the product generation at 870 mJ/cm² is interpreted by the ejection of small neutral and ionic fragments, and subsequent reactions among the fragments.     

Effect of electron irradiation on the properties of germanium-doped gallium arsenide

The Hall effect, electrical conductivity (77–370 K), and photoluminescence spectra (77 K) are studied in single-crystals of nuclearly doped GaAs (NDG) and GaAs doped with Ge by the metallurgical method after irradiation by electrons (E= 1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2). Initial electron concentrations were n= 1.7·10¹⁷ cm^–3 and n₀=2.6·10¹⁷ cm^–3 respectively. In the GaAs doped during crystal growth by the Czochralski method the degree of compensation related to the amphoteric impurity Ge is higher (K=0.8) than in the NDG (K=0.4) for identical initial electron concentration. It was established that the rate of charge carrier removal in GaAs is lower than in NDG, while radiation defects are more thermostable in NDG. The energy spectrum of radiation defects and radiating recombination centers, and the basic steps in reestablishment of electrophysical and optical properties in GaAs and NDG are similar, i.e., they do not depend on the method of germanium doping.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 82–86, April, 1991.     

Electrophysical properties of heat-treated gallium arsenide

The electrical conductivity, Hall effect, ionization energy, and defect concentration of GaAs samples subjected to various forms of heat treatment were studied. The original material comprised single crystals grown by the Bridgman and Czochralski methods with electron concentrations of 2·10¹⁵–7·10¹⁷ cm^–3. The ionization energy and defect concentration were calculated with an electronic computer. The thermal conversion of GaAs was attributed to traces of copper, lattice defects, and residual impurities. The mobility varied in a complicated manner with the temperature of heat treatment in GaAs samples retaining their original n-type conductivity.Translated from Izvestiya VU Z, Fizika, No. 3, pp. 69–76, March, 1973.     

Photo production of surface recombination centers in gallium arsenide

The near band edge photoluminescence (–870 nm) at 300 K of semi-insulating and p-type GaAs, a potentially useful tool for GaAs wafer mapping, decreases with time under illumination from the 514 nm line of an Ar⁺ laser. The photoluminescence bleaching has been studied by optical and photo Hall-effect techniques. It recovers only partially on a time scale of days and does not show a distinct intensity threshold behavior. From lifetime measurements and experiments on samples covered with epitaxial layers of GaAs _x P_1–x or Si₃N₄ it is concluded that creation of surface recombination centers causes the PL bleaching.     

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×10¹⁰ cm⁻² was observed by atomic force microscopy before the capping process. The influences of GaAs, In_0.53Ga_0.47As, and InP capping layers (5–10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.     

Infrared absorption spectra for B- and P-alloyeda-Si: Effects of annealing

The effects of isochronal annealing on the infrared and far-infrared spectra of very heavily B- and P-dopeda-Si(H) are reported. Upon annealing, the B-H stretching mode evolves into two bands centered at 2475 and 2370cm^–1. The broad band of the heavily B-doped samples between 600 and 900cm_-1 is resolved into three peaks or absorption shoulders located at 830, 725, and 630cm_-1. The 640cm_-1 band of the heavily P-doped samples splits into two peaks centered at 630 and 670cm_-1. The assignment of the above peaks is discussed. The intrinsic infrared absorption due to the Si lattice modes changes only little as a result of the annealing. These changes are a measure of the H-induced ir activity of the Si-Si bands.     

Diffusion of deuterium in GaAs from a molecular gas source

It is shown for the first time that deuterium can diffuse into GaAs from a gaseous source. Experiments performed at 500° C show two-component diffusion profiles with diffusion coefficients in the range 10^–15–4×10^-1cm²s^–1 depending on the conductivity type of the samples. These diffusion coefficients are considerably lower than those determined after RF plasma hydrogenation. Such a slow diffusion process is related to the reaction of molecular deuterium with the sample surface leading to the dissociation of the deuterium molecules.     

Heavy carbon doping of AlAs by elemental-source molecular beam epitaxy

Heavily carbon-doped AlAs films with free-hole concentrations in excess of 10¹⁹ cm^–3 have been grown by conventional molecular beam epitaxy using elemental sources. The hole concentration in AlAs:C saturates at 6×10¹⁹ cm^–3 without any detectable deterioration of the smooth surface morphology and of the structural properties. At very high carbon concentrations the lattice contraction due to the smaller covalent radius of carbon leads to an in-plane lattice constant of the AlAs:C films which is even smaller than that of the GaAs substrate. The high freehole concentration and the tunability of the lattice constant are important for application in p-type GaAs/AlAs Bragg reflectors in surface emitting lasers having a low series resistance and a significantly reduced lattice mismatch.     

Photoluminescence as a tool for the study of the electronic surface properties of gallium arsenide

Electronic surface parameters of GaAs have been determined from a qualitative and quantitative analysis of the relative photoluminescence intensity at 300 K. Characteristics of etched (100) surfaces ofn- andp-type liquid phase epitaxial GaAs have been found to be governed by negative surface charges. A density of charged surface states of about 10¹² cm⁻² and a band bending of 0.59 eV have been found forn-type material with an electron concentration of 1.1×10¹⁷ cm⁻³. Forp-type samples with hole densities ranging from 6×10¹⁵ to 4.3×10¹⁸ cm⁻³ the estimated density of negatively charged surface states was below 2×10¹¹ cm⁻², and the band bending was not more than a few kT.     

Ohmic contact and space-charge-limited current in molybdenum oxide modified devices

The effect of indium-tin oxide (ITO) surface treatment on hole injection of devices with molybdenum oxide (MoO₃) as a buffer layer on ITO was studied. The Ohmic contact is formed at the metal/organic interface due to high work function of MoO₃. Hence, the current is due to space charge limited when ITO is positively biased. The hole mobility of N, N′-bis-(1-napthyl)-N, N′-diphenyl-1, 1′biphenyl-4, 4′-diamine (NPB) at various thicknesses (100–400 nm) has been estimated by using space-charge-limited current measurements. The hole mobility of NPB, 1.09×10⁻⁵ cm²/V s at 100 nm is smaller than the value of 1.52×10⁻⁴ cm²/V s at 400 nm at 0.8 MV/cm, which is caused by the interfacial trap states restricted by the surface interaction. The mobility is hardly changed with NPB thickness for the effect of interfacial trap states on mobility which can be negligible when the thickness is more than 300 nm.     

Physical properties of GaAs on glass

Physical properties of GaAs layers grown by molecular beam epitaxy on glass substrates are investigated by Raman light scattering, Photothermal Deflection Spectroscopy (PDS), optical absorption and Scanning Electron Microscopy (SEM) measurements. The results indicate that the layers are polycrystalline and strain-free. Raman spectra exhibit GaAs-TO and LO modes at 260 and 283 cm^–1, respectively. The peaks are shifted by about 10 cm^–1 with respect to bulk GaAs which we attribute to local heating effects induced by laser excitation. The phonon lines are strong and have a bandwidth of about 5 to 8 cm^-1 indicating a good crystalline quality. However, neither photoluminescence nor the Hall effect could be observed that is suggestive of the presence of a large number of electronic defects. SEM micrographs taken from the surface and the interface exhibit a granular structure with the polycrystal sizes of well under 1 m. PDS results show about 10¹⁸ cm^–3 defects and some disorder at the band gap.     

Photoluminescence studies of confined states in AlGaAs/GaAs asymmetric quantum well

In the recombination spectra of AlGaAs/GaAs heterostructures, a peculiar and asymmetric photoluminescence (PL) band F has previously been reported [Aloulou et al., Mater. Sci. Eng. B 96 (2002) 14] to be due to recombinations of confined electrons from the two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs interface in asymmetric quantum well (AQW). Detailed experiments are reported here on GaAs/Al_0.31Ga_0.69As/GaAs:δSi/Al_0.31Ga_0.69As/GaAs samples with different spacer layer thicknesses. We show that the band F is the superposition of two PL bands F′ and F″ associated, respectively, to AQW and a symmetric quantum well (SQW). In the low excitation regime, the F′ band present a blue shift (4.4 meV) followed by important red shift (16.5 meV) when increasing optical excitation intensity. The blue shift in energy is interpreted in terms of optical control of the 2DEG density in the AQW while the red shift is due to the narrowing of the band gaps caused by the local heating of the sample and band bending modification for relatively high-optical excitation intensity. Calculation performed using self-consistent resolution of the coupled Schrödinger–Poisson equations are included to support the interpretation of the experimental data.     

Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing

This work reports on InAs/GaAs quantum dots (QDs) intermixing, induced by phosphorous ion implantation and subsequent rapid thermal annealing. The implantation process was carried out at room temperature at various doses (5×¹⁰¹⁰-¹⁰¹⁴ ions/cm²), where the ions were accelerated at 50 keV. To promote the atomic intermixing, implanted samples are subjected to rapid thermal annealing at 675 °C for 30 s. Low temperature photoluminescence (PL) measurements are carried out to investigate the influence of the interdiffusion process on the optical and electronic properties of the QDs. PL emission energy; linewidth and integrated intensity are found to exhibit a drastic dependence on the ion implantation doses. The band gap tuning limit has been achieved for an implantation dose of 5×¹⁰¹³ ions/cm². However, our measurement reveals that the accumulated defects for implantation doses higher than ¹⁰¹² ions/cm² drive the system towards the degradation of the QDs structure's quality.     

Enhancement of the electron mobility with infrared photoexcitation in Si: Te at low temperatures

Hall measurements on Te-doped silicon (N _Te 10¹⁶ cm^–3) have been performed in the temperature range between 10 K and 300 K with infrared photoexcitation of electrons into the conduction band. The samples exhibit electron Hall mobilities which are increased by approximately 50% compared to measurements in the dark. The increased electron mobility can be correlated with an increased electron population of shallow donor levels by photoexcitation. Coulomb scattering due to charged shallow donor centers is converted into less efficient dipole scattering (Te-acceptor pairs) by the light-induced redistribution of electrons.     

Intersubband absorption in highly photoexcited semiconductor quantum wells

Transient mid infrared (MIR) absorption spectroscopy is used to investigate transitions between higher electronic subbands in semiconductor quantum well (QW) structures after interband photoexcitation with intense picosecond pulses in the visible spectral range. Our investigation focuses on the e₂–e₃ intersubband transition in an asymmetric undoped GaAs/AlGaAs QW structure. At an injected nonequilibrium carrier density of 1×10¹³ cm⁻²/QW, an e₂–e₃ absorption band at 99 meV with a spectral width of 5 meV is found. For a higher density studied, 3×10¹³ cm⁻²/QW, the band is broadened and blueshifted by 30 meV. Intersubband absorption signals are distinguished from free-carrier absorption signals in the MIR by their characteristic time behavior.     

Heavy doping with Sn of GaAs layers grown by molecular beam epitaxy for non-alloyed ohmic contacts

High Sn-doping of molecular beam epitaxy (MBE) grown GaAs layers for non-alloyed ohmic contacts is presented. The highly doped layers were studied by van der Pauw-Hall measurements, Raman spectroscopy, low-temperature photoluminescence and scanning electron microscope. The highest free electron concentration of 8×10¹⁸ cm^–3 and the lowest resistivity of 8× ×10^–4 cm were achieved. Doping limit of Sn in GaAs is discussed. Using the heavily Sn-doped GaAs layers and the in situ Sn deposition the non-alloyed ohmic contacts with specific contact resistance of 8×10^–5 cm² and highly linearI–V characteristics were obtained.This results were presented at the symposium Molecular Beam Epitaxy, Frankfurt/Oder, GDR, March 23–27, 1987.     

Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires

We report on structural and electrical properties of GaAs nanowires (NWs) grown by molecular beam epitaxy (MBE) on GaAs and SiO₂ substrates using Au as growth catalyst. Au–Ga particles are observed on the top of the NWs by transmission electron microscopy (TEM). In most of the observed cases, individual particles contain two Au–Ga compositions, in particular orthorhombic AuGa and β′ hexagonal Au₇Ga₂. The wires grown on GaAs are regularly shaped and tidily oriented on both (1 0 0) and (1 1 1)B substrates. TEM also reveals that the NWs have a wurtzite lattice structure. Electrical transport measurements indicate that nominally undoped NWs are weakly n-type while both Be- and Si-doped wires show p-type behaviour. The effect of the lattice structure on impurity incorporation is briefly discussed.