硅光电池实验设计

采用开放式的实验平台设计了硅光电池系列实验,测量了硅光电池在全暗和光照下的伏安特性,开路电压、短路电流和输出电压与光照强度的关系,以及短路电流和开路电压与温度的依赖关系.实验内容包含电学和光度学知识,学生可以掌握硅光电池的工作原理和基本特性.     

Cr掺杂以及Mo和Cr双掺Mn4Si7的第一性原理计算

采用基于密度泛函理论中第一性原理的赝势平面波法,分别对本征Mn4Si7、Cr掺杂Mn4Si7以及Cr和Mo双掺Mn4Si7的电子结构及光学性质进行了计算和分析。计算结果表明本征Mn4Si7禁带宽度为Eg=0.813 eV,Cr掺杂Mn4Si7禁带宽度为Eg=0.730 eV,Cr和Mo双掺Mn4Si7禁带宽度为Eg=0.620 eV,均为间接带隙半导体、p型掺杂。此外,在低能区掺杂体系的介电函数、折射率、消光系数、吸收系数以及光电导率均强于本征Mn4Si7,表明Cr掺杂Mn4Si7以及Cr和Mo双掺Mn4Si7有运用于红外光电子器件的巨大潜力。     

太阳能电池基本特性测定实验

对传统的“太阳能电池伏安特性测量”实验进行改进，利用光功率测定仪和滤色片，定量分析在不同光强照射下以及在不同截止波长的光照射下，太阳能电池特性参量的变化规律，并测量了半导体材料的禁带宽度．     

半导体物理效应及其应用讲座第四讲光吸收跃迁效应与半导体红外探测器的应用发展

光吸收跃迁效应是半导体光电探测器的基本物理过程.文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展.讨论窄禁带半导体带间光吸收跃迁的理论和实验.文章还介绍了本征光吸收系数的表达式及其在材料表征和确定器件截止波长方面的应用,以及它在解释近年来发现的HgCdTe光电二极管电致负荧光现象方面的应用.     

结构参数对p-i-n结构InGaN太阳能电池性能的影响及机理

研究了器件结构参数对p-i-n结构InGaN单结太阳能电池性能的影响及物理机制. 模拟结果发现: 随着InGaN禁带宽度的增加, InGaN电池的短路电流减小, 但同时开路电压增加, 当InGaN层的禁带宽度为1.5 eV左右时, 同质p-i-n结InGaN电池的效率最高, 并计算了不同厚度的i层对InGaN电池效率的影响. 进一步的计算表明, 适当采用带宽更大的p-InGaN层形成异质p-i-n结InGaN电池可以获得更高效率, 但是p-InGaN层带宽过大也会导致电池的效率急剧下降. 研究还发现, 采用禁带宽度更大的n-InGaN层可以形成背电场, 从而增加p-i-n结InGaN太阳电池的效率. 研究结果表明, 适当选择p-InGaN和n-InGaN禁带宽度形成异质p-i-n结可以提高InGaN太阳能电池效率.     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO2的晶胞参数,能带结构和电子态密度.结果显示萤石TiO2属于间接带隙半导体材料,其间接禁带宽度(Γ→X)Eg为2.07 eV,比常见的金红石和锐钛矿TiO2的禁带宽度窄.为了更清楚地了解萤石的光学性质,利用Kramers-Kronig色散关系,分别对萤石和金红石TiO2的复介电常数、吸收率等参数进行了计算,并将二者结果做了比较.其中萤石TiO2的静介电常数为8.31.金红石TiO2的静介电常数表现为各向异性ε1xy(0)=6.01和ε1z(0)=7.07,该计算结果与实验值一致.吸收光谱的对比结果显示萤石结构在51nm和153 nm处增加了新的吸收峰,并且吸收光谱范围已扩大到了可见光区.     

太阳能电池特性的自动测量

利用C8051F020单片机实现了对光电池的开路电压、短路电流、串联内阻、最佳负载、最佳输出功率等重要参数的自动测量和数据处理,并在液晶屏上自动显示相应的曲线.结合实际应用的情况,还测量了串联光电池和并联光电池的参数.     

用电流补偿法光电池的光照特性

采用电流补偿线路来实现测量电路电阻力零的短路条件，准确地测出不同光照下的光电池的短路电池。     

用变温霍尔效应估测锑化铟的禁带宽度

通过变温霍尔效应实验获得锑化铟的霍尔系数随温度变化的数据,根据半导体的霍尔系数随温度的变化规律,计算出禁带宽度,并且着重讨论禁带宽度的两种求法,比较了两种方法的计算精度.     

点缺陷对单层MoS_2电子结构及光学性质的影响研究

采用基于第一性原理的贋势平面波方法,对不同类型点缺陷单层Mo S2电子结构、能带结构、态密度和光学性质进行计算.计算结果表明:单层Mo S2属于直接带隙半导体,禁带宽度为1.749e V,Mo空位缺陷V-Mo的存在使得单层Mo S2转化为间接带隙Eg=0.660e V的p型半导体,S空位缺陷V-S使得Mo S2带隙变窄为Eg=0.985e V半导体,S原子替换Mo原子S-Mo反位缺陷的存在使得Mo S2转化为带隙Eg=0.374e V半导体;Mo原子替换S原子Mo-S反位缺陷形成Eg=0.118e V直接带隙半导体.费米能级附近的电子态密度主要由Mo的4d态和s的3p态电子贡献.光学性质计算表明:空位缺陷对Mo S2的光学性质影响最为显著,可以增大Mo S2的静态介电常数、折射率n0和反射率,降低吸收系数和能量损失.     

Pulsed CO2 laser-driven production of ultrafine silicon,silicon carbide,silicon nitride and silicon oxynitride powders

Summary Ultrafine Si, Si₃N₄, SiC and silicon oxynitride powders have been produced by irradiating gas-phase reactants by means of a CO₂ laser. The mechanism of SiH₄ CO₂ laser-induced absorption and dissociation is discussed on the basis of the results of the spectral and time-resolved measurement of fragment chemiluminescence. The role played by the SiH₂ radical in the powder formation is investigated. The quality of Si, Si₃N₄, SiC and silicon oxynitride powders is checked by means of several off-line diagnostics (IR spectroscopy, X-ray diffraction at wide and small angle, BET analysis). The possibility of controlling powder stoichiometry and doping from the gas-phase reactant concentration is discussed.     

Paramagnetic defects in silicon/silicon dioxide systems

Paramagnetic defect centers in Si/SiO₂ systems have been observed by direct ESR, optically-induced ESR, and NMR relaxation of liquids at the outer oxide surface. In general, all the defects reported elsewhere were confirmed, but with some significant discrepancies in character. The P_B center was observable even at room temperature. The P_C center was found to exist much deeper in the silicon than previously determined, and it is tentatively identified to be neutral iron. Surface liquid relaxation is very strong on oxidized crushed silicon, is not dependent on liquid composition, and suggests a strong wide-line spin center in the outer oxide surface. The optically activated spin center created by HF/HNO₃ etches was found not to involve H₂O or OH functionalities, and appears to be a nitrogenous radical. The optical defect center lies within the silicon, and its presence warrants caution in use of HNO₃-based etches in wafer processing. Oxides prepared at elevated pressures show fewer P_A and P_C defects than those produced by conventional processing, which indicates potential merit in pressure oxidation methods.     

Metastability of amorphous silicon from silicon network rebonding

We propose a network rebonding model for light-induced metastability in amorphous silicon, involving bonding rearrangements of silicon and hydrogen atoms. Nonradiative recombination breaks weak silicon bonds and generates dangling bond-floating bond pairs, with very low activation energies. The transient floating bonds annihilate, generating local hydrogen motion. Charged defects are also found. Support for these processes is found with tight-binding molecular dynamics simulations. The model accounts for major experimental features of the Staebler-Wronski effect including electron-spin resonance data, the t(1/3) kinetics of defect formation, two types of metastable dangling bonds, and hysteretic annealing.     

Excimer-laser-induced micropatterning of silicon dioxide on silicon substrates

Highly resolved micropatterns induced on SiO₂-coated Si sample surfaces have been investigated using a KrF excimer laser (λ: 248 nm and τ: 23 ns). Uniform micropatterns were observed to form in the oxide layer after laser-induced melting of interfaces. The pattern size can be controlled either by the laser parameters or even by the oxide layer thickness. SEM analysis identified that the micropatterns were virtually initiated at the molten interface and the oxide layer followed the interface patterning to change its profile. Simulation of laser interaction with double-layered structures indicated that the oxide layer could melt or be ablated due to interface superheating when it was deposited on a highly absorbing Si substrate. IR analysis has demonstrated that the structural properties of the SiO₂ layer undergo no appreciable changes after laser radiation. This process provides a possible basis for its application in micropatterning of transparent materials using excimer lasers. Received: 4 September 2000 / Accepted: 13 September 2000 / Published online: 30 November 2000     

Secondary ion emission from silicon and silicon oxide

The emission of Si⁺, Si²⁺, Si³⁺, Si₂⁺, SiO⁺ and B⁺ from boron doped silicon has been studied at oxygen partial pressures between 2 × 10^?10 and 2 × 10^?5 Torr. Sputtering was done with 2 to 15 keV argon ions at current densities between 3 and $\text{40}\text{μ}\text{A}\text{cm}{}^2$. The relative importance of the different ionization processes could be deduced from a detailed study of the yield variation at varying bombardment conditions. Comparison with secondary ion emission from silicon dioxide allows a rough determination of the composition of oxygen saturated silicon surfaces.     

Cathodoluminescence from nanocrystalline silicon films and porous silicon

Received: 4 May 1998 / Accepted: 30 October 1998     

Mechanism of silicon epitaxy on porous silicon layers

The mechanism of silicon epitaxy on porous Si(111) layers is investigated by the Monte Carlo method. The Gilmer model of adatom diffusion extended to the case of arbitrary surface morphology is used. Vacancies and pendants of atoms are allowed in the generalized model, the activation energy of a diffusion hop depends on the state of the neighboring positions in the first and second coordination spheres, and neighbors located outside the growing elementary layer are also taken into account. It is shown that in this model epitaxy occurs by the formation of metastable nucleation centers at the edges of pores, followed by growth of the nucleation centers along the perimeter and the formation of a thin, continuous pendant layer. Three-dimensional images of surface layers at different stages of epitaxy were obtained. The dependence of the kinetics of the epitaxy process on the amount of deposited silicon is determined for different substrate porosities. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 7, 512–517 (10 April 1998)     

Hydrogen implantation and diffusion in silicon and silicon dioxide

Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the¹⁵N technique and by SIMS. Whereas hydrogen implanted at a fluence of 10¹⁵ ions/cm² shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions.Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H₂ transformation of the hydrogen bonding.     

Low-porosity porous silicon nanostructures on monocrystalline silicon solar cells

In this work we present a study of low-porosity porous silicon (PS) nanostructures stain etched on monocrystalline silicon solar cells. The PS layers reduce the reflectance, improve the diffusion of dopants by rapid thermal processes, and increase the homogeneity of the sheet resistance. Some samples were subjected to chemical oxidation in HNO₃ to reduce the porosity of the surface layer. After the diffusion process, deposition of a SiN_x antireflection layer, and screen printing of the samples, an efficiency of 15.5% is obtained for low-porosity PS solar cells, compared with an efficiency of 10.0% for standard PS cells and 14.9% for the reference Cz cells.     

Analysis of thin thermal silicon nitride films on silicon

We have investigated the chemical and electrical properties of very thin (<32 Å thick) silicon nitride films grown by rapid thermal nitridation of silicon. These films were of interest as a possible means of tailoring the barrier heights of silicon Schottky barrier diodes. Auger and XPS analysis showed that the level of oxygen contamination in the films was very low ([N]/[N]+[O]) =0.85 to 0.95). The oxygen is located primarily at the surface and interface of the films. Metal-nitride-silicon devices were characterized by I-V and C-V techniques. These measurements indicated an increase in barrier heights to p-type substrates and a decrease in barrier heights to n-type substrates compared to values measured in the absence of the nitride layers. The magnitude of the change in barrier height increases with increasing nitride thickness. The barrier height can be varied reproducibly over a wide range. For molybdenum on p-type, this range is greater than half the bandgap. For titanium and molybdenum on p-type diodes, barrier heights higher than 1.0 V can be achieved. These measurements could be explained by a reduction in the density of silicon interface states with increasing nitride thickness or by the presence of positive fixed charge in the nitride layer.