单发大口径光束下介质膜损伤阈值测试

针对传统的激光诱导损伤阈值测试中存在的耗时问题,提出了一种利用单发次、大口径光束的介质膜损伤阈值的快速测定方法。该方法以图像处理为基础,通过坐标变换和栅格压缩,建立了样品辐照区域内损伤分布与光斑强度分布之间的精确对应关系。基于对大口径光斑辐照区域内损伤信息的快速提取和统计方法,通过单次激光辐照,获取了待测区域的损伤阈值。根据此方法搭建了单发大口径光束损伤阈值测试平台,并对HfO2/SiO2高反射膜损伤阈值进行了单发次测定的验证。     

基于飞秒激光微加工的介质膜损伤修复研究

针对波长1053 nm, 0°高反介质膜元件, 采用有限时域差分法, 模拟分析了损伤修复点边缘与法线的夹角对膜层内电场强度分布的影响, 该角度越小, 修复点的损伤阈值越高. 通过优化飞秒激光微加工过程中的焦斑尺寸、脉冲能量、扫描步长和扫描次数等参数, 获得了夹角为25°、深度为14 μm的修复点. 该修复点典型的损伤阈值为21 J/cm², 是修复前的2.3倍, 50个修复点的测试结果表明该修复参数具有非常好的可重复性. 修复点的测试结果还验证了修复点边缘与法线的夹角大小与其损伤阈值的关系, 45°的电场强度最大值约为25°的2.5倍, 而45°的损伤阈值约为25°的1/2, 模拟和实验结果一致性较好. 同时, 实验验证了微加工的激光脉宽对修复点损伤阈值的影响, 在只改变脉宽的情况下, 脉宽越长, 损伤阈值越低.     

高精度损伤阈值测量中测试口径效应研究

随着光学元件损伤阈值测试研究工作的深入开展,有效、准确地测量和描绘它们的激光损伤阈值需要考虑多个因素。从不同口径的测试光束入手,采用R∶ 1测试方式,运用R∶ 1平均阈值的新概念,讨论了相同样品用不同测试口径测试其损伤阈值时,所得测试结果与测试口径的关系。研究表明,随着测试口径的增大,相同样品的损伤阈值逐渐减小,当测试口径增大到一定值时,损伤阈值趋于稳定。     

电场的增强作用对介质膜光栅损伤形貌的影响

研究了电场在介质膜光栅结构中的增强效应对其抗激光损伤阈值的影响.使用傅里叶模式方法计算了电场在介质膜光栅浮雕结构内的分布.数值分析表明：电场在介质膜光栅中增强的最大值为入射光的2倍,其最大的位置出现在相对于入射光对面的光栅槽侧壁。实验测试介质膜光栅样品在1 064 nm和12 ns, 51.2°和TE偏振光入射时,其抗激光损伤阈值为6.61 J/cm2.对损伤形貌进行扫描电镜精确分析,发现介质膜光栅的初始损伤产生于电场在介质膜光栅内增强最大的位置处.     

高精度损伤阈值测量中测试口径效应研究

 随着光学元件损伤阈值测试研究工作的深入开展，有效、准确地测量和描绘它们的激光损伤阈值需要考虑多个因素。从不同口径的测试光束入手，采用R∶ 1测试方式，运用R∶ 1平均阈值的新概念，讨论了相同样品用不同测试口径测试其损伤阈值时，所得测试结果与测试口径的关系。研究表明，随着测试口径的增大，相同样品的损伤阈值逐渐减小，当测试口径增大到一定值时，损伤阈值趋于稳定。     

提高多层介质膜脉宽压缩光栅阈值的清洗方法

采用HPM溶液（盐酸、双氧水和去离子水的混合液）结合氧等离子体对多层介质膜脉宽压缩光栅进行清洗研究。用X射线光电子能谱检测光栅表面的元素成分及其原子含量的变化。实验结果表明,氧等离子体处理能有效去除光栅表面残留光刻胶和碳氟化合物; 再经HPM溶液清洗,反应离子束刻蚀和氧等离子体处理过程产生的金属污染物被进一步去除。经过上述清洗工艺处理后,光栅一级衍射效率仍保持在95%以上,光栅表面激光诱导损伤阈值达到1.6 J/cm2 (1053 nm, 10 ps)。实验结果说明了氧等离子体和HPM溶液相结合能有效清洗多层介质膜脉宽压缩光栅,并显著提高光栅损伤阈值。     

大口径衍射光栅10 ps激光损伤阈值测量（英）

在采用啁啾脉冲放大技术的高功率短脉冲激光装置中,终端衍射光栅的损伤阈值是限制装置输出能力的瓶颈之一。提出了测量大口径光栅损伤阈值的方法。该方法通过在线监测采集大口径光斑的同发近场光强分布情况和相应的光栅损伤图像,并经过一系列后期图像数据处理,建立起能量与损伤点的对应关系,经过一个测试光斑便可获得所有通量下的光栅损伤特性。该测量方法对光斑均匀性没有硬性要求,为损伤测量装置中难以解决的光斑均匀性问题提出了新的应对思路和方法。     

大口径衍射光栅10 ps激光损伤阈值测量（英）

在采用啁啾脉冲放大技术的高功率短脉冲激光装置中,终端衍射光栅的损伤阈值是限制装置输出能力的瓶颈之一。提出了测量大口径光栅损伤阈值的方法。该方法通过在线监测采集大口径光斑的同发近场光强分布情况和相应的光栅损伤图像,并经过一系列后期图像数据处理,建立起能量与损伤点的对应关系,经过一个测试光斑便可获得所有通量下的光栅损伤特性。该测量方法对光斑均匀性没有硬性要求,为损伤测量装置中难以解决的光斑均匀性问题提出了新的应对思路和方法。     

基于多层介质膜光栅的谱合成系统光束特性分析

针对多层介质膜光栅在光束谱合成系统中的应用, 利用光线追迹方法, 建立了基于多层介质膜光栅的谱合成系统光传输模型. 多层介质膜光栅引入的相位调制包括浮雕表面上光程差与浮雕结构光程差两部分, 且受到光栅槽深、占空比和光束入射角等因素的影响. 利用衍射积分方法和光束非相干叠加原理, 计算模拟了基于多层介质膜光栅的谱合成系统的合成光束光强分布. 在此基础上, 利用强度二阶矩方法分析了合成光束的光束质量, 并讨论了多层介质膜光栅的槽深、占空比和制作误差等因素对合成光束特性的影响. 结果表明: 改变多层介质膜光栅的槽深和占空比以及中心光束入射角会影响合成光束能量, 但不会影响合成光束的光束质量, 合成光束的光束质量始终保持与单个子光束的光束质量相当; 多层介质膜光栅的制作误差对合成光束的光束质量和能量均存在明显影响.     

高损伤阈值三倍频分离膜

 设计了Nd：YAG激光用三倍频分离膜,膜层材料为SiO₂和HfO₂。经过优化,膜系在355 nm处的反射率在99%以上,在532 nm和1 064 nm处透射率也在99%以上。采用电子束蒸发技术,在熔融石英基底上制备了样品,经测量,制备的分离膜光学性能与设计值接近。分离膜在355 nm激光辐照下的损伤阈值为5.1 J/cm²,并用微分干涉显微镜表征了薄膜损伤形貌。     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.     

Design of optical system for flattop beam shaper based on the measurement of laser induced damage threshold of thin films

To solve the problem of large error when measure the laser induced damage threshold of thin films in the case of Gaussian distribution beam induced damage thin films, optical system of flattop beam shaper which is capable of redistributing a beam with a Gaussian profile to a flattop profile was designed with optical design software ZEMAX. The Fermi-Dirac beam model was chosen as the distribution function of the flattop beam in this paper, the mapping formula of the input Gaussian beam and the output flattop beam was establish, the surface coefficient of aspheric was given. The energy conversion efficiency was 95.33% and the flattened degree was 93.66% in this design. The accuracy of measurement has been improved when measure the laser induced damage threshold of thin films by the flattop beam.     

Pulsed top-hat beam thermal-lens measurement for ultraviolet dielectric coatings

A mode-mismatched surface thermal-lens technique with pulsed top-hat beam excitation and a near-field detection scheme are developed to measure in situ the thermoelastic response of ultraviolet dielectric coatings to excimer-laser (193- or 248-nm) irradiation. The thermal-lens technique is demonstrated to be not only convenient for accurate determination of the laser-induced damage threshold (LIDT) but also sensitive to measurement of the thermoelastic response of dielectric coatings irradiated with fluence far below the LIDT, and hence is shown to be appropriate for time-resolved predamage investigation. A minimum detectable surface displacement of approximately 0.002 nm is achieved with a simple experimental configuration. Nonlinear absorption as well as the nonlinear effect in laser conditioning of a LaF(3)/MgF (2) highly reflective dielectric coating are observed for what is believed to be the first time.     

紫外超短脉冲激光的单次测量

利用瞬态光栅衍射法研制了一台单次频率分辨光学开关激光参数测量仪,可以对脉宽范围在10 ps以内的紫外超短脉冲激光进行单次测量。利用该仪器对重复频率为10 Hz的放电泵浦和单次运行的电子束泵浦KrF准分子激光器的输出脉冲分别进行了单次测量,结果表明：对于放电泵浦,当系统工作在零啁啾附近时,脉冲波形和光谱分布较规则,相位分布起伏较小,当系统偏离零啁啾状态时,脉冲波形和光谱分布不再规则,并且相位分布为抛物线结构;对于单次运行的电子束泵浦,脉冲波形具有多峰结构,光谱具有复杂的调制,脉宽约为2 ps,带宽约为1.3 nm,相位分布为抛物线结构。     

紫外超短脉冲激光的单次测量

 利用瞬态光栅衍射法研制了一台单次频率分辨光学开关激光参数测量仪,可以对脉宽范围在10 ps以内的紫外超短脉冲激光进行单次测量。利用该仪器对重复频率为10 Hz的放电泵浦和单次运行的电子束泵浦KrF准分子激光器的输出脉冲分别进行了单次测量,结果表明：对于放电泵浦,当系统工作在零啁啾附近时,脉冲波形和光谱分布较规则,相位分布起伏较小,当系统偏离零啁啾状态时,脉冲波形和光谱分布不再规则,并且相位分布为抛物线结构;对于单次运行的电子束泵浦,脉冲波形具有多峰结构,光谱具有复杂的调制,脉宽约为2 ps,带宽约为1.3 nm,相位分布为抛物线结构。     

Single-shot measurement of free-electron laser polarization at SDUV-FEL

In this paper, a division-of-amplitude photopolarimeter(DOAP) for measuring the polarization state of a free-electron laser(FEL) pulse is described. The incident FEL beam is divided into four separate beams, and four Stokes parameters can be measured in a single-shot. In the crossed-planar undulators experiment at the Shanghai deep ultraviolet FEL test facility, this DOAP instrument constructed in house responsed accurately and timely while the polarization-state of fully coherent FEL pulses were switched, which is helpful for confirming the crossed-planar undulators technique for short-wavelength FELs.     

Single-shot ablation threshold of chromium using UV femtosecond laser pulses

Single-shot ablation threshold for thin chromium film was studied using 266 nm, femtosecond laser pulses. Chromium is a useful material in the nanotechnology industry and information on ablation threshold using UV femtosecond pulses would help in precise micromachining of the material. The ablation threshold was determined by measuring the ablation crater diameters as a function of incident laser pulse energy. Absorption of 266 nm light on the chromium film was also measured under our experimental conditions, and the absorbed energy single-shot ablation threshold fluence was \(46 \pm 5\)  mJ/cm². The experimental ablation threshold fluence value was compared to time-dependent heat flow calculations based on the two temperature model for ultrafast laser pulses. The model predicts a value of 31.6 mJ/cm² which is qualitatively consistent with the experimentally obtained value, given the simplicity of the model.     

力学边界对透射型光学元件激光破坏阈值的影响

建立了激光与透射型光学元件相互作用的热弹性力学模型,解析求解了自由、固定以及一种人为边界条件下光学元件热-力学响应的定解问题。研究发现,不同的边界条件对破坏阈值有很大的影响。针对光学元件中热应力的演变情形,设计了一种“最佳”边界,消除了激光作用过程中产生的拉应力,从而使破坏阈值在理论上达到最大值。