基于渐进圆锥天线的ns前沿电磁脉冲电场传感器

为了对ns级上升沿的电磁脉冲电场进行测量,研制了一种基于D-dot渐进圆锥天线的电场传感器。设计采用单极子渐进圆锥天线作为电场传感器的接收天线,并通过建模仿真验证了该天线的性能;通过电光转换模块将天线感应的电信号转换为光强度信号并通过光纤传输;利用软件积分对传感器测得的电场微分信号进行处理;通过测试试验验证了传感器的性能。研究表明,所研制的电场传感器能够测量上升沿大于1.5 ns的脉冲电场,具有体积小、线性度高的优点。     

基于FPGA的电磁脉冲电场测量系统

为了测量纳秒级前沿的电磁脉冲电场,研制了一种基于现场可编程门阵列（FPGA）的宽频带电磁脉冲电场测量系统,该系统采用单极子天线作为电场探头的接收天线,高速AD采集调理电路输出的电压信号,由FPGA接收AD采样的数据并保存至DDR2和FLASH存储器中;分析了系统的整体方案;对系统的信号调理、采集的触发方式、FPGA控制以及干扰屏蔽等关键技术进行了重点分析;通过电场探头、电磁脉冲模拟器、PTEM暗室、衰减器以及示波器进行了性能和功能验证实验;利用软件将电场探头和示波器测得的信号进行处理和对比;实验表明,所研制的电场探头可以测量前沿大于2.5 ns、电场强度为0~50 kV/m的脉冲电场,系统线性度好,体积小,抗干扰性能好,测量准确性高。     

车载单极天线的电磁脉冲响应特性

针对车载系统中使用广泛的短波/超短波单极天线,利用CST仿真分析了高空核电磁脉冲对单极天线的耦合响应特性。计算了天线端接的50 Ω负载对电磁脉冲的时频域感应电压信号,研究了电压信号随不同的脉冲入射角、不同车顶面积以及天线不同位置的变化规律。仿真结果表明：馈电点响应电压峰值随着入射脉冲电场矢量与水平夹角的增大而增大,随着车顶对入射脉冲的有效反射面积增大而增大。仿真结果对车辆天线布局方案的定制及天线系统电磁脉冲防护器件的选择具有重要的指导意义。     

基于TEM喇叭的电磁脉冲辐射天线优化设计

针对TEM喇叭天线终端反射大、低频辐射效率低的问题,对其进行了仿真优化设计。采用时域分析方法,分析了端部加载电阻与背部加载电阻的低频补偿方法,对TEM喇叭天线的尺寸、极板顶角等结构参数进行了优化,采用末端卷边结构,提升了辐射场的峰值场强与脉宽。根据仿真优化结果,研制了长度2.5 m、天线极板间张角45°、天线极板顶角45°的TEM喇叭天线,通过实测验证了仿真结果。结果表明,加载电阻可以有效降低反射,背部加载电阻方式的峰值场强和脉宽比端部加载电阻高,且采用4个电阻并联加载的效果较好;适当增加天线长度、极板顶角以及极板间夹角可以提高天线辐射性能。该研究结果为TEM喇叭天线在辐射式核电磁脉冲试验系统的应用提供了参考。     

快上升前沿电磁脉冲与目标腔体的孔腔共振效应研究

利用时域有限差分方法（FD-TD Method)研究了快上升前沿电磁脉冲（FREMP）对目标腔体的孔腔共振效应。研究表明：由于FREMP的高频分量丰富,使得FREMP更容易通过目标腔体上的孔缝,与目标腔体发生孔腔共振。由于孔缝的对外辐射,振荡幅度将逐渐减弱。     

导体板上单极天线对电磁脉冲响应特性的矩量法分析

 针对应用广泛的单极天线,基于矩量法分析了天线对高空电磁脉冲和高功率微波、超宽带非核电磁脉冲的响应,计算了三类电磁脉冲通过天线耦合产生感应电流频谱响应和时域瞬态响应,窄带脉冲的响应曲线与入射脉冲有较大相似性,电流响应峰值依次为100,60和10.3 A,对现有大功率限幅器的功率容限提出了更高的要求。     

快上升前沿电磁脉冲与目标腔体的孔腔共振效应研究

 利用时域有限差分方法（FD-TD Method)研究了快上升前沿电磁脉冲（FREMP）对目标腔体的孔腔共振效应。研究表明：由于FREMP的高频分量丰富,使得FREMP更容易通过目标腔体上的孔缝,与目标腔体发生孔腔共振。由于孔缝的对外辐射,振荡幅度将逐渐减弱。     

装有电路板孔阵矩形腔对快上升前沿电磁脉冲的屏蔽效能

介绍了快上升前沿电磁脉冲的特性,用传输线法分析了孔阵矩形腔屏蔽效能的基本原理。将基本公式作进一步修正,使其能计算矩形腔内装有印刷电路板（PCB）的情形。对修正的传输线模型计算公式进行了扩展,使之能计算任意极化方向时的情况。计算和仿真结果表明: 当频率低于主谐振频率时,测量点离孔阵越近,屏蔽效能越差,同时低频段的屏蔽效能比高频段的要好;孔阵的屏蔽效能比相同面积单孔的要好;装有PCB腔体的屏蔽效能比空腔的要好,这在谐振区域内尤为突出;PCB板尺寸越大,屏蔽效能越好;屏蔽效能随极化角度的递增而增加;屏蔽体越小,屏蔽效果越好。     

导体板上单极天线对电磁脉冲响应特性的矩量法分析

针对应用广泛的单极天线,基于矩量法分析了天线对高空电磁脉冲和高功率微波、超宽带非核电磁脉冲的响应,计算了三类电磁脉冲通过天线耦合产生感应电流频谱响应和时域瞬态响应,窄带脉冲的响应曲线与入射脉冲有较大相似性,电流响应峰值依次为100,60和10.3 A,对现有大功率限幅器的功率容限提出了更高的要求。     

装有电路板孔阵矩形腔对快上升前沿电磁脉冲的屏蔽效能

 介绍了快上升前沿电磁脉冲的特性,用传输线法分析了孔阵矩形腔屏蔽效能的基本原理。将基本公式作进一步修正,使其能计算矩形腔内装有印刷电路板（PCB）的情形。对修正的传输线模型计算公式进行了扩展,使之能计算任意极化方向时的情况。计算和仿真结果表明: 当频率低于主谐振频率时,测量点离孔阵越近,屏蔽效能越差,同时低频段的屏蔽效能比高频段的要好;孔阵的屏蔽效能比相同面积单孔的要好;装有PCB腔体的屏蔽效能比空腔的要好,这在谐振区域内尤为突出;PCB板尺寸越大,屏蔽效能越好;屏蔽效能随极化角度的递增而增加;屏蔽体越小,屏蔽效果越好。     

Effect of the rise time of the remagnetizing pulse on the nanosecond remagnetization of permalloy films

A study was made of the effect of the rise time of the remagnetizing pulse on the nanosecond-remagnetization signals of permalloy films, on the average-magnetization trajectory, and on the effective damping parameter. These effects intensify with increasing coercive force of the films.Translated from Izvestiya Vysshikh Uchenbykh Zavedenii Fizika, No. 2, pp. 7–10, February, 1971.     

基于远场时间反演的亚波长天线阵列研究

基于远场时间反演, 从信号处理角度对亚波长阵列的超分辨率聚焦特性进行了理论分析. 提出了一种新型的微结构刻蚀亚波长阵列, 通过时间反演聚焦实验表明, 该阵列具有远场超分辨聚焦特性, 各单元间信道相互独立. 将这种亚波长阵列应用在时间反演镜天线上, 通过实验验证了可以获得更好的超分辨率聚焦效果. 所提出的亚波长天线阵列对多天线超宽带无线通信具有潜在的应用价值. 关键词： 时间反演 亚波长 天线阵列 超分辨率     

快前沿纳秒高压脉冲源的开发及实验研究

 针对国际电工委员会1996年制定的IEC61000-2-9和美国国防部1999年修定的MIL-STD-461E标准提出的高空核爆电磁脉冲波形，研制了一台新型纳秒高压脉冲源。其产生的双指数波脉冲前沿小于3ns，脉宽58ns，幅度可达4kV，此外还可产生前沿小于2ns、幅度最高为4kV的脉冲方波；两种脉冲均可实现单次和间歇可调输出。介绍了脉冲源的电路设计和调试结果，通过实验对比了MIL-STD-461E与MIL-STD-461D两种双指数波形条件下某测控系统模块的干扰耦合效应。     

铌酸锂光学电场传感器温度稳定性改善研究

铌酸锂晶体材料具有较高的电光系数和稳定的物理、化学性质,广泛应用在各种电场传感器中。但是,铌酸锂晶体折射率对温度较为敏感,在使用最大电光效应方向时,由于自然双折射的存在,晶体工作点随温度漂移,一方面导致传感器无法稳定工作,另一方面也影响了传感器的灵敏度和动态范围。为了消除这一影响,探头中将使用长度相等、主轴正交的两块铌酸锂晶体,一块作为传感晶体,一块作为补偿晶体。由于补偿晶体的存在,传感器的自然双折射得到很大程度的抑制,温度稳定性也得到了改善。经实验对比,补偿之后的传感器工作状态稳定性比未补偿的传感器得到大幅提升。     

Development of fluorescent FeIII sensor based on chalcone

In this paper, 4-dimethylamino 2,5-dihydroxy chalcone (DMADHC), which exhibits excited state intramolecular charge transfer (ICT) characteristics, was synthesized and characterized. A sensitive optochemical sensor for Fe³⁺ ion was developed using DMADHC as fluorescence receptor. The fluorescence of DMADHC was gradually quenched with the addition of Fe³⁺ ion, which attributed to the formation of 1:1 complex between DMADHC and Fe³⁺ ion. The sensor exhibited excellent selectivity for Fe³⁺ ion over a large number of cation ions such as alkali, alkaline earth and transitional metal ions with a linear range of 3.984×10⁻⁷-1.135×10⁻⁵ and a limit of detection of 8.223×10⁻⁸ mol/L. On this basis, the sensor was preliminary applied to the determination of the content of iron ions in multi-vitamin tablet with satisfied results and the recoveries were in the 95-100% interval, and precision (n=5) was better than 5%.     

Effect of insulating films on the current of an electron beam from gas-filled diodes exposed to voltage pulses with a nanosecond rise time

The parameters of subnanosecond electron beams generated in gas-filled diodes are studied. When the voltage pulse rise time is short (≈1 ns or less) and the electron beam is extracted from the diode through insulating films, the amplitude of the signal measured at the collector depends not on the electron beam current but on the electromagnetic radiation arising in the diode and the capacitive current from the collector. If the electron beam is extracted through thin metallic foils and fine metallic grids, the FWHM of the runaway electron pulsed beam is ≈0.1 ns and its amplitude reaches several hundreds of amperes.     

Development of afterglow time test system for nanosecond fluorescent screen of low-level-light image intensifier北大核心CSCD

The time characteristics of fluorescent screen is one of the important parameters to evaluate the performance of image intensifier. At present, there is no measurement method for the afterglow time of nanosecond fluorescent screen of low-level-light image intensifier. Based on the traditional test scheme of image intensifier afterglow time, a afterglow time test system for nanosecond fluorescent screen was developed. This system used a high-speed signal generator with the sampling rate of 250 MHz to complete the excitation of the laser diode light pulse, and a photomultiplier tube was used with the descending time of 0.57 ns to complete the photoelectric conversion of the fluorescent screen light signal. The weak photocurrent signal of μA magnitude was amplified and converted to a single-terminal differential circuit to complete the AD conversion in AD9684. Then the digital luminance information of the fluorescent screen was stored in the double data rate SDRAM (DDR) unit after field programmable gate array (FPGA), and the host computer sent instructions to read the DDR memory. The USB3.0 high-speed transmission protocol was used to transmit data to the host computer. In the data processing, the Kalman filtering and fast finding falling edge algorithm were used to realize the accurate measurement of noise filtering from collected data and afterglow time. The test results show that the proposed afterglow time test system for nanosecond fluorescent screen can effectively test the image intensifier with ultrafast optical characteristics. The afterglow test results of P47 phosphor reaches 118.094 4 ns, and the repeatability reaches 2.08%. © 2022 Editorial office of Journal of Applied Optics. All rights reserved.