纳米晶LaNiAl薄膜充氦技术研究（英文）

采用离子束辅助磁控溅射方法沉积出了纳米晶LaNiAl膜和纳米晶渗氦LaNiAl膜(膜厚约10μm),通过调节ArHe气氛的比例可控制纳米晶膜中的含氦量(He/LaNiAl的原子分数5.7%~13.8%),通过该方法引入到LaNiAl金属薄膜中的氦量远高于采用球磨法制备的纳米LaNiAl粉中的含氦量。研究结果表明:渗氦LaNiAl膜中的氦含量(原子分数)可达13.9%,氦在膜的深度方向分布均匀;热解析分析恒温条件下沉积的渗氦膜的起始释放温度为848K,最高释放温度为1407K,主释放峰为1080K,初步确定了氦主要是以团簇的形式存在于在纳米晶膜中。     

纳米晶钛膜中氦注入的保持剂量

在从室温到500℃的温度范围内，用卢瑟福质子背散射技术分别测量了不同能量、不同剂量注入的纳米晶钛膜中氦的浓度分布，不同温度时的保持剂量及其释放浓度.发现氦在这种纳米晶粒膜中其氦-钛原子浓度比达到41%—52%时能在室温到100℃的温度下长期稳定保持，若其原子浓度达52%—74%时也能在室温环境有效保持.文中对这种具有大的界面体积比的膜能有效保持氦这种惰性元素的可能机理从能量观点进行了初步探讨. 关键词： 离子注入 纳米晶粒钛膜 氦 保持剂量     

晶粒尺寸对掺氦纳米多晶铁机械性能影响的分子动力学模拟研究

采用分子动力学方法研究了晶粒尺寸对掺氦纳米多晶铁机械性能的影响.在拉伸形变过程中,纳米多晶铁将产生裂纹与晶格畸变,通过模拟XRD谱探索二者之间的联系.拉伸模拟结果显示,由于晶界氦原子的引入,峰值应力将显著减小.另外,在拉伸模拟中观察到,沿晶裂纹的产生与长大随着晶界氦原子的引入而增强.研究结果表明,晶界氦原子能够促进沿晶...     

堆垛层错和温度对纳米多晶镁变形机理的影响

本文采用分子动力学模拟方法研究了在拉伸载荷下,堆垛层错和温度对纳米多晶镁力学性能的影响,在模拟中,采用嵌入原子势描述镁原子之间的相互作用．计算结果表明：在纳米晶粒中引入堆垛层错能明显增强纳米多晶镁的屈服应力,但堆垛层错对纳米多晶镁杨氏模量的影响很小;温度为300．0K时,孪晶在晶粒交界附近形成,孪晶随着拉伸应变的增加而逐渐生长．当拉伸应变达到0．087时,一种基面与X—Y面成大约35°角且内部包含堆垛层错的新晶粒成核并快速增长．也就是说,孪晶和新晶粒的形成和繁殖是含堆垛层错的纳米多晶镁在300．0K温度下的主要变形机理．模拟结果也显示,当温度为10．0K时,位错的成核和滑移是含堆垛层错的纳米多晶镁拉伸变形的主要形式．     

离子注入金红石单晶生成的金属Ni纳米晶的磁学性能研究

研究了能量为64keV、注量1×1017cm-2的Ni离子注入金红石TiO2单晶制备的植入金属纳米晶的微观结构和磁学性能。注入层的结构和磁学性能采用透射电子显微分析（TEM）和超导量子干涉磁强计（SQUID）进行分析。结果表明，金红石单晶中有尺寸为3～18nm的金属Ni纳米晶生成，注入区域基体明显非晶化。10K温度下金属Ni纳米晶的矫顽力约为16.8kA·m-1，比Ni块材的矫顽力大。样品的零场冷却/有场冷却（ZFC/FC）曲线表明，金属Ni纳米晶的截止温度约为85K。     

温度对fcc铁中氦行为的影响研究

温度对fcc铁中的氦行为具有重要的影响,编写了居于fcc晶格的面向对象动力学蒙特卡罗程序（Object Kinetic Monte Carlo）,采用该程序结合分子动力学（MD）方法对fcc铁中的氦行为进行多尺度模拟,研究了温度对fcc铁中氦行为的影响,给出了不同温度退火过程中氦行为的原子细节。模拟结果表明引入一定量的非热平衡空位可以使模拟结果与文献实验结果有非常好的吻合;室温至1073K,温度对氦行为影响可以分为四个阶段：第一阶段,298-473K,正电子长寿命随退火温度增加略有减少,这主要由于非热平衡空位浓度降低;第二阶段,473-673K,正电子长寿命随退火温度增加而增加,主要由于晶粒内平均氦泡尺寸增加;第三阶段,673-873K,正电子长寿命随退火温度增加而迅速减少,主要是由于氦泡的平均尺寸减小和晶粒内的空位浓度降低;第四阶段,873-1073K,正电子长寿命随退火温度增加而迅速增加,与晶粒内氦泡的平均尺寸变大,且空位浓度随温度的增加而指数增加有关。     

单轴应力场下钨中氦扩散行为的分子动力学模拟研究

本文采用分子动力学方法研究了沿<100>及<111>晶向的单轴应变对钨中单个氦原子扩散的影响。结果表明,应变会使得金属钨材料发生相变,且引起相变的临界应变随温度升高而减小。相变起始的应变在达到抗拉强度的应变附近。计算结果表明,拉应变使得单个氦原子在钨中的扩散系数发生骤降,在不同应变下扩散系数变化平缓。沿<100>晶向氦扩散系数随应变的增大而线性减小,而<111>晶向则出现了震荡变化趋势。研究结果表明,沿<100>晶向应变达到+0.15%时阿纽列斯方程不再适用,而沿<111>晶向应变大+5%阿纽列斯方程仍然适用;沿<111>晶向随应变增加氦扩散激活能减小,说明应变使得单个氦原子在钨中迁移性增强。     

铒、钪膜中离子注入氦的热解析行为

采用热解析法初步研究了铒、钪膜中离子注入氦的热解析行为。研究结果表明:同种元素铒中离子注入氦的热释放峰位相同,但膜的致密性将影响氦的释放量,结构疏松的膜中存在的孔洞是氦的快速释放通道;在相同注入剂量和能量条件下,铒、钪膜中注入氦的热释放峰位不同,这可能与氦在铒、钪膜中的深度分布及膜的致密性有关,利用质子增强背散射法测量出能量为60 keV的4He+在铒、钪膜中的注入深度分别为210,308 nm。     

直流磁控溅射沉积含He钛膜的研究

研究了用He/Ar混合溅射气体的直流磁控溅射制备钛膜中，He的掺入现象.分析结果表明，大量的He原子（He/Ti原子比高达56%）被均匀地引入到Ti膜中，其He含量可由混合溅射气体的He分量精确控制.通过调节溅射参数，可实现样品中He的低损伤引入.研究还发现，溅射沉积的含氦Ti膜具有较高的He成泡剂量和高的固He能力，这可能是溅射沉积形成了纳米晶Ti膜所致.纳米晶Ti膜较粗晶材料具有很高浓度的He捕陷中心，使He泡密度增大而泡尺寸减小.随He引入量的增加，Ti膜的晶粒尺寸减小，He引起的晶体点阵参数和X射线衍射峰宽度增大，晶体的无序程度增加.Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%)incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage(or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retain He in sputtering Ti films is much higher than that in the coarse grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With the increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase.     

离子注入金红石单晶生成的金属Ni纳米晶的磁学性能研究

 研究了能量为64keV、注量1×10¹⁷cm^-2的Ni离子注入金红石TiO₂单晶制备的植入金属纳米晶的微观结构和磁学性能。注入层的结构和磁学性能采用透射电子显微分析（TEM）和超导量子干涉磁强计（SQUID）进行分析。结果表明，金红石单晶中有尺寸为3～18nm的金属Ni纳米晶生成，注入区域基体明显非晶化。10K温度下金属Ni纳米晶的矫顽力约为16.8kA·m^-1，比Ni块材的矫顽力大。样品的零场冷却/有场冷却（ZFC/FC）曲线表明，金属Ni纳米晶的截止温度约为85K。     

Discovery of dumbbell-shaped Cs*Hen exciplexes in solid 4He

We have observed several new spectral features in the fluorescence of cesium atoms implanted in the hcp phase of solid helium following laser excitation to the 62P states. Based on calculations of the emission spectra using semiempirical Cs-He pair potentials the newly discovered lines can be assigned to the decay of specific Cs*Hen exciplexes: an apple-shaped Cs(APi3/2)He2 and a dumbbell-shaped Cs(APi1/2)Hen exciplex with a well-defined number n of bound helium atoms. While the former has been observed in other environments, it was commonly believed that exciplexes with n>2 might not exist. The calculations suggest Cs(APi1/2)He7 to be the most probable candidate for that exciplex, in which the helium atoms are arranged on a ring around the waist of the dumbbell-shaped electronic density distribution of the cesium atom.     

Motion of a helium atom through a comparable-diameter channel in the Frenkel-Kontorova model

The motion of a helium atom through a channel with a diameter comparable to the diameter of this atom is investigated. Such channels are observed in materials of the quartz type. The inclusion of the local law of momentum conservation in the analysis of the interaction between the He atom and the atoms forming the channel wall makes it possible to reduce the problem to one-dimensional motion similar to the motion of a dislocation in the Frenkel-Kontorova model. In the model proposed here, the activation energy of the complex formed by the He atom and the displacements of atoms of the channel wall is calculated. The obtained energy is expressed in terms of the shear modulus of the material forming the channel and the helium atom polarizability, which depends on the state of the helium atom.     

10-2～105 Pa气压范围的氦等离子体光谱分析

采用三种实验装置(介质阻挡放电装置、空心阴极放电装置和彭宁放电装置)分别测量了不同压强范围内氦等离子体的发射光谱.通过对氦等离子体发射光谱的分析,已观察到一个共同的特点,就是在三种放电条件下产生的氦等离子体中31P1→21S0的谱线强度总是最强,可以推测亚稳态氦原子的含量相当显著,但不同的装置也有不同的特点,介质阻挡放电装置能够产生准辉光放电,谱线中氦原子的谱线强度很低,而空心阴极放电与彭宁放电装置能够产生稳定均匀的等离子体,且发射足够强的光辐射.我们已对所拍摄的光谱的谱线都进行了辨认,所有结果表明原子发射光谱分析法是研究不同条件下氦等离子体状态的一种十分有效的手段.     

从大气压到超低气压范围的氦等离子体发射光谱的基本特性

采用三种实验装置(介质阻挡放电装置、空心阴极放电装置和彭宁放电装置)分别测量了不同压强范围内氦等离子体的发射光谱。通过对氦等离子体发射光谱的分析,已观察到一个共同的特点,就是在三种放电条件下产生的氦等离子体中31P1→21S0的谱线强度总是最强,可以推测亚稳态氦原子的含量相当显著,但不同的装置也有不同的特点,介质阻挡放电装置能够产生准辉光放电,谱线中氦原子的谱线强度很低,而空心阴极放电与彭宁放电装置能够产生稳定均匀的等离子体,且发射足够强的光辐射。我们已对所拍摄的光谱的谱线都进行了辨认,所有结果表明原子发射光谱分析法是研究不同条件下氦等离子体状态的一种十分有效的手段。     

Measurement of a long electronic spin relaxation time of cesium atoms in superfluid helium

The longitudinal electronic spin relaxation time of Cs atoms optically polarized in superfluid helium (He II, 1.5 K) has been measured with special care to cope with a serious decrease in the number of Cs atoms in the observation region. This decrease, mainly caused by helium convection in introducing the atoms into He II by laser sputtering, was significantly reduced using a new atom implantation method. Combined with a careful correction for the number of atoms, we have determined the relaxation time to be 2.24(19) s or longer, roughly twice as long as that in solid He.     

Simultaneous magneto-optical trapping of a boson-fermion mixture of metastable helium atoms

We simultaneously confine fermionic metastable 3He atoms and bosonic metastable 4He atoms in a magneto-optical trap. The trapped clouds, containing up to 1.5 x 10(8) atoms of each isotope, are characterized by measuring ions and metastable helium atoms escaping from the trap. Optical pumping of 3He atoms to a nontrapped hyperfine state is investigated and it is shown that large atom numbers can be confined without additional repumping lasers. Unique possibilities for quantum degeneracy experiments with mixtures of spin-polarized metastable 3He and 4He atoms are indicated.     

Formation of K*He exciplexes on the surface of helium nanodroplets studied in real time

Superfluid helium nanodroplets are doped with potassium atoms to form complexes with the alkali atom residing on the surface of the droplets. Dispersed laser-induced fluorescence spectra of such systems already revealed the formation of M(*)He ( M = Na,K) exciplexes upon electronic excitation [Reho et al., Faraday Discuss. 108, 161 (1997)]. By means of femtosecond pump-probe spectroscopy, this formation process now is followed in real time. We find K(*)He(n = 1) to be formed within 180 fs. Furthermore, the existence of exciplexes with n>1 is quantified suggesting that the first ring around the potassium atom contains four helium atoms.     

Metastable helium atom stimulated desorption of H+ Ion

H+ desorption induced by the impact of metastable helium atoms has been found for H(2)O/Na/Ni(110) coadsorption systems. The measurements were carried out using a time-of-flight technique and a pulsed-discharge type metastable helium atom ( He(*)) source. It is concluded that the H+ desorption by He(*) is induced by a hole created on the valence levels via the Auger deexcitation of He(*). The H+ desorption by He(*) may be understood within the framework of the Menzel-Gomer-Readhead model.     

Vacancy trapping and helium decoration in Sb ion-implanted tungsten studied by Mössbauer spectroscopy

Mössbauer effect measurements have been performed using sources of¹¹⁹Sb implanted in W without and with post-implanted helium. Each of the sources was subjected to an isochronal annealing sequence in order to study vacancy trapping, helium decoration and recovery of damage. Four sites have been identified for Sb implanted in tungsten; one of these corresponds with substitutional Sb atoms, two others are assigned to Sb atoms associated with vacancies, while the last one can be either vacancy or impurity associated. The development of site occupation as a function of annealing temperature is in accordance with the one-interstitial model. Injection of 2·10¹⁶ He/cm² leads to nucleation of helium bubbles. Helium atoms that are released from these bubbles at about 1300 K are retrapped by Sb atoms to form new bubbles.