激光波长及脉宽对光学材料抗损伤性能的影响

 基于能带理论,利用激光与光学材料相互作用的理论模型,研究了激光辐照下材料导带自由电子数密度的变化,讨论了材料损伤阈值与激光波长、脉冲宽度、材料禁带宽度之间的关系,数值分析了激光波长和脉冲宽度对损伤阈值的影响。结果表明:当脉宽小于1 ps时,材料损伤阈值随脉宽增大而减小;当脉宽大于1 ps时,材料损伤阈值随脉宽增大而增大;激光波长为10 fs~10 ns,损伤阈值随着波长的减小而减小。     

材料表面缺陷对激光热损伤的影响

建立了激光辐照下光学表面典型锥状缺陷的热损伤分析模型,基于有限差分方法计算了典型缺陷附近的调制光场和温度场分布,得出了缺陷对材料热损伤阈值的影响规律。结果表明,热损伤阈值与入射激光的波长呈正相关,与缺陷的尺寸呈负相关。同一波长激光辐照的情况下,材料表面有1个缺陷存在时,热损伤首先发生在缺陷处,而当多个缺陷存在时,热损伤首先发生在2个缺陷的中间区域,并且多个缺陷要比单个缺陷更易造成损伤;对于不同波长的辐照激光来说,波长为800nm的激光要比波长为1064nm的激光更容易使材料产生损伤。     

脉宽对中红外激光带内损伤HgCdTe材料的影响

研究了脉宽对于中红外脉冲激光带内损伤碲镉汞（HgCdTe）材料阈值的影响,使用一维自洽模型对激光辐照HgCdTe材料程中的载流子数密度,载流子对数目流,载流子对能流,载流子温度和材料晶格温度等相关参数进行仿真计算。仿真结果表明,波长2.85 μm,脉宽30 ps～10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值为200～500 mJ/cm2。其中,300 ps～3 ns脉冲激光的损伤阈值相近,均为200 mJ/cm2且低于其他脉宽激光的损伤阈值。搭建实验光路并进行相关实验验证仿真模型的正确性。实验发现,波长2.85 μm、脉宽300 ps的单脉冲激光带内辐照HgCdTe材料的损伤阈值在200 mJ/cm2左右。相同条件下,10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值约474 mJ/cm2。百皮秒脉冲激光对HgCdTe材料的损伤过程结合了热击穿和光学击穿效应,其独特的毁伤机理加剧了材料的损伤。     

高温合金不同脉宽超快激光作用下多脉冲去除阈值

实验研究了激光脉冲宽度和脉冲个数对镍基高温合金材料去除阈值的影响,分别在290 fs,1 ps和7 ps脉宽的激光下,使用1,10,50,100,300,500和1000个不同能量的激光脉冲辐照高温合金样品表面。实验结果表明,烧蚀坑尺寸会随脉冲数的增加而增加,而脉冲宽度的增加会加大脉冲个数对烧蚀坑直径的影响。通过烧蚀坑直径的平方值与激光脉冲能量之间存在的对数关系,得到了不同脉冲宽度下镍基高温合金的多脉冲材料阈值。3种不同脉宽下的高温合金多脉冲去除阈值都存在显著的累积效应。根据去除阈值计算得到290 fs,1 ps和7 ps脉宽下的累积效应系数分别为0.88,0.86和0.78。     

激光诱导薄膜等离子体点燃时间及其影响因素

将波长为1064nm的纳秒Nd∶YAG脉冲激光聚焦在单层Al膜上,诱导其产生等离子体闪光,模拟计算了等离子体闪光的点燃时间(t_m),分别得到了t_m与激光波长、入射激光能量、聚焦光斑半径、脉宽等激光作用参数的关系曲线,研究分析了薄膜材料、薄膜表面杂质和缺陷对t_m大小的影响。结果表明,激光聚焦光斑和脉宽越大,t_m就越大;激光波长和入射激光能量越大,t_m越小;薄膜材料电离能越小,t_m越小;薄膜表面存在杂质和缺陷时,t_m变小。这些结果对关于激光维持燃烧波和爆轰波的产生机制的研究提供了一定的参考。     

不同脉冲宽度355 nm波长激光诱导DKDP晶体损伤特性

研究了用于三倍混频的Ⅱ类DKDP晶体在35 ps,850 ps和7.6 ns三种不同脉宽355 nm波长激光作用下的损伤特性。实验对比分析了损伤阈值、概率和损伤针点形貌、尺寸和密度,并根据损伤阈值及概率得到前驱体阈值及密度。结果表明,前驱体的激光能量吸收量与脉宽线性相关。35 ps激光作用下DKDP有一种前驱体吸收激光能量形成熔融状损伤针点。850 ps激光作用下有两种前驱体吸收激光能量并产生力学破坏形成中心熔融四周断裂的损伤针点。7.6 ns激光作用下只有一种前驱体吸收激光能量,并且形成的损伤针点与850 ps对应的损伤针点有相同特征。     

三种不同波长的激光对熔石英损伤行为的对比研究

利用SAGA激光器,输出脉宽为7．2ns、波长分别为1064nm、532nm、355nm的基频光和倍频光,对相同类型的5块石英基片用R：1的方法分别测量了其损伤阂值,对比不同波长激光对石英材料的损伤行为差异。得出其损伤阈值在三种不同波长激光作用下分别为：46．78J／cm^2、13．4J／cm^2、9．28J／cm^2;并利用尼康E600W光学显微镜对三种不同波长激光造成的损伤形貌进行了观察,结合当前光学材料的损伤机理,对比得出倍频激光对石英基片的损伤破坏能力远大于基频光,且对石英材料的损伤机理主要表现为多光子吸收导致的雪崩电离破坏,而基频光的损伤多为表面缺陷及杂质引起的热破坏的结论。     

激光大气击穿阈值的数值分析

 针对大气中飞行器的等离子体隐身问题,数值计算了ns量级强激光击穿大气的阈值,讨论了一些相关条件对阈值的影响。结果表明：对于ns量级的入射激光,波长越长,大气的击穿阈值越小;气压越大,击穿阈值也越小;气体中存在的初始电子对不易产生光电离的长波长入射激光的击穿阈值,有明显的减少作用,但对短波长入射激光的击穿阈值几乎没有影响;脉宽越宽,激光辐照的时间越长,大气击穿的阈值越小。     

划痕缺陷对熔融石英光诱导损伤特性的影响分析

激光辐照光学材料时,经后表面反射的部分光束与入射光束干涉,在材料内部形成驻波场.若材料表面存在缺陷,缺陷会对入射光进行调制,导致材料内驻波场分布不再均匀,局部区域光强增大.为分析光学材料的场损伤特性,建立了一个划痕缺陷影响下的光学材料损伤分析模型.从电子增值理论出发,分析了划痕数量及其所在位置对材料驻波场和损伤特性的影响,并针对熔融石英材料进行了具体计算.结果表明,在入射光场不变的前提下,随着划痕数量增加,对光场的调制作用增强,材料内部驻波场的最大场强增大,熔融石英损伤阈值降低.相对亚表面和后表面划痕缺陷而言,材料上表面的缺陷对光场具有最大的调制作用,因此更容易导致材料损伤.     

150fs～10ps脉宽下熔石英激光损伤的仿真与分析

基于约化电子数密度增长速率方程,建立了熔石英导带电子数密度随脉冲持续时间变化的模型。利用电子数临界密度这一概念,得到了150fs~10ps脉宽下,熔石英激光损伤阈值范围。分析表明,5~10ps,雪崩电离仍然起主要作用,而光致电离提供的初始电子使雪崩电离不再依赖材料原有的初始电子;当脉宽减小到约为4ps时,光致电离与雪崩电离作用相等;之后,光致电离起主要作用。通过仿真出的损伤阈值拟合,得到了该脉宽区间下新的脉宽定律:熔石英的损伤阈值正比于脉宽的0.38次方;考虑温度对熔石英损伤阈值的影响,熔石英的损伤阈值正比于脉宽的0.34次方。     

45°高反膜中节瘤缺陷的电场增强效应及损伤特性

研究设计和制备了中心波长为1064 nm的45°多层膜反射镜,通过数值仿真结合实验,对薄膜中节瘤缺陷引起的电场增强效应及其对薄膜抗激光损伤性能的影响进行了研究。结果表明:当1064 nm激光从右至左45°斜入射时,电场增强效应主要出现在节瘤缺陷的表层及其左侧轮廓中部,电场增强效应随节瘤缺陷尺寸增大而增强。实验上,在清洁的基板表面喷布单分散SiO2微球作为人工节瘤种子,采用电子束蒸发制备法完成多层全反膜的制备,采用R-on-1方式对薄膜样品进行激光损伤测试。结果表明,薄膜的损伤阈值随着节瘤缺陷尺寸增加而减小。通过综合分析电场增强效应、薄膜损伤测试结果及损伤形貌特征得出,薄膜损伤阈值降低是由于节瘤缺陷和薄膜中微缺陷共同作用的结果。     

Incubation effect and its influence on laser patterning of ITO thin film

Results are presented on the surface damage thresholds of ITO thin films induced by single- and multi-pulse laser irradiation at a pulse duration of 10 ps and a wavelength of 1064 nm. For multi-pulse ablation the incubation effect results in a reduction of the damage threshold, especially apparent at low pulse numbers and very small film thicknesses. The incubation effect attributes to the accumulation of defect sites and/or the storage of thermal stress-strain energy induced by the incident laser pulses. An incubation coefficient of S=0.82 has been obtained which is independent on the film thickness in the range of 10–100 nm. In practical applications, the incubation effect determines the laser patterning structure of ITO films while increasing the pulse overlapping rate. The width of the patterned line can be predicted by the proposed model involving the laser fluence, the overlapping rate and the incubation coefficient.     

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO₂ interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.     

Near-field optical properties of wide bandwidth metal multi-layer dielectric gratings for pulse compressor

Metal multi-layer dielectric gratings (MMDG) for pulse compressors in high-energy laser systems should provide broad bandwidth as well as high laser-induced damage thresholds. The non-uniform optical near-field distribution of MMDG is an important factor that limits damage resistant capabilities. MMDG for pulse compressors operating at 800 nm with a corrugated SiO₂ layer are designed by using a genetic algorithm and the Fourier mode method. The diffraction efficiency, bandwidth, and near-field distribution of the MMDG are theoretically investigated. For the single dielectric match layer grating, the bandwidth is 140 nm, if the thickness and refractive index of the match layer are changed, the maximum electric field in the grating ridge, match layer, and metal layer of the grating increases with the decrease in grating diffraction efficiency. For the multi-dielectric match layer grating, the bandwidth and the maximum electric field in the metal layer decrease with the increase in high- and low-index material pairs, and the maximum electric field in the grating ridge and match layer initially decreases and then increases. Over a wide wavelength range, the maximum electric field in the grating ridge, match layer, and metal layer is minimal near the central wavelength. Moreover, MMDG should be used at larger incident angles while keeping enough bandwidth to reduce the electric field in the grating.     

Evolution of ion-irradiated point defect concentration by cluster dynamics simulation

The relationship between ions irradiation and the induced microstructures(point defects, dislocations, clusters, etc.)could be better analyzed and explained by simulation. The mean field rate theory and cluster dynamics are used to simulate the effect of implanted Fe on the point defects concentration quantitatively. It is found that the depth distribution of point defect concentration is relatively gentle than that of damage calculated by SRIM software. Specifically, the damage rate and point defect concentration increase by 1.5 times and 0.6 times from depth of 120 nm to 825 nm, respectively. With the consideration of implanted Fe ions, which effectively act as interstitial atoms at the depth of high ion implantation rate, the vacancy concentration C_v decreases significantly after reaching the peak value, while the interstitial atom concentration C_i increases significantly after decline of the previous stage. At the peak depth of ion implantation, C_v dropped by 86%, and C_i increased by 6.2 times. Therefore, the implanted ions should be considered into the point defects concentration under high dose of heavy ion irradiation, which may help predict the concentration distribution of defect clusters, further analyzing the evolution behavior of solute precipitation.     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps,波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法,实验测量了激发空气电离所需的阈值激光强度.结果表明,当激光脉冲宽度从50fs增加到22ps时,阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²;I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p 关键词： 飞秒激光 阈值 多光子电离 碰撞电离     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps，波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法，实验测量了激发空气电离所需的阈值激光强度.结果表明，当激光脉冲宽度从50fs增加到22ps时，阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²；I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p     

KDP晶体的杂质与光学性能分析

 测量常规方法与快速方法生长的非线性光学KDP晶体紫外及近红外波段透射光谱性能,并测定了晶体不同生长区域杂质的含量,通过对实验结果的分析比较讨论了影响晶体紫外透过性能的因素;采用多脉冲平均方式测量了不同方法生长晶体在1 064nm及532 nm皮秒激光脉冲作用下的晶体损伤阈值,晶体的体吸收系数与晶体抗损伤能力的对应关系表明晶体内部的杂质与缺陷存在着明显的光吸收, 从而降低了晶体对高能量脉冲的负载能力。