量子阱级联激光器

介绍了一种新型的工作于４．２５μｍ的半导体激光器－量子阱级联激光器，这种新型激光器是单极性的，它发光仅依赖于电子而并非正负两种电荷，介绍了这种激光器的结构，工作原理和激光特性。     

多量子阱半导体激光器的交叉增益调制波长转换特性

实验利用光注入多量子陆半导体激光器产生的载流子消耗和带间载流子吸收产生的交叉增益调制效,实现波长转换,转换光的光强变化幅度与偏置电流有关。通过调节偏置电流的大小,能使转换光与注入信号光在同向和反向间进行切换。     

InGaAsSb/AlGaAsSb长波长多量子阱激光器有源区的优化设计

系统地研究了波长为2.7μm的InGaAsSb/AlGaAsSb多量子阱激光器中有源区的优化设计.分别用含应变势的6带KP模型和抛物带模型计算价带和导带的能带结构,并得到薛定谔方程和泊松方程的自洽解,由此计算量子阱在载流子注入时的增益谱.研究表明制约量子阱增益的主要因素不是跃迁矩阵元,而是粒子数反转程度,尤其是空穴填充HH1子带的概率.增加压应变或减小阱宽都会提高量子阱增益.前者降低了价带HH1子带空穴的平面内有效质量;后者拉大了价带子带间距,尽管它同时略微增加了空穴有效质量.这两种因素都导致价带顶空穴态     

适用于量子阱激光器的速率方程

首次在理论上用量子阱激光器增益与载流子密度的对数关系替代了原有速率方程中的线性关系，得到了改进了速率方程，分析了稳态和调制特性，从理论上得到了获得最低阈值的最佳阱数和最大调制带宽的最佳腔长。     

量子阱微腔环型半导体激光器

报道了用纳米制作技术,实现了InGaAs/InGaAsP环型微腔激光器.激光器的直径为3μm～20μm,环的宽度为0.4μm～3μm,环的厚度为190nm.其激射峰值波长为1403nm.     

808nm无铝大功率量子阱激光器

报导了用低压(LP)-MOCVD方法研制出808nm无铝InGaAsP/InGaP/GaAs单量子阱分别限制异质结构大功率激光器(SCHSQW),器件外微分量子效率为65%,阈值电流密度400A/cm2,特征温度120℃,对于100μm条宽、1000μm腔长宽接触激光器,室温连续输出光功率达1瓦以上,并讨论了无铝大功率激光器的阈值、光谱等特性.     

量子阱半导体激光器阈值的理论分析

分析了单量子阱(SQW)、多量子阱(MQW)和分别限制异质结构量子阱(SCH-SQW)半导体激光器的阈值.求出了表示光增益随注入载流子密度变化的方程.利用这个结果,得到了上述三种量子阱半导体激光器的阈值电流密度的表达式.     

用直接模拟法分析量子阱半导体激光器瞬态响应

根据光增益与载流子密度的对数关系 ,通过适应于多量子阱激光器的速率方程的直接模拟分析 ,得到了注入电流、阱数和腔长对多量子阱激光器的激射阈值、开关延迟时间、弛豫振荡频率和光输出等参量之间的依赖关系 .运用相图确立了在瞬态过程中 ,载流子数密度和光子数密度之间的转化过程 .从而为改善量子阱激光器的高频调制特性以及优化设计器件结构参数提供了理论依据     

量子阱半导体激光器的光束质量

本文给出了一种非截取地收集非傍轴激光束,并把它变换成傍轴光束的方法,将之运用到量子阱半导体激光器的实验中发现了一些重要的现象.经过测量和计算得到它垂直于结方向的等效光束质量原子M_y²明显小于1,根据该结果对半导体激光器的设计和使用提出了建议.     

用直接模拟法分析量子阱半导体激光器瞬态响应

根据光增益与载流子密度的对数关系,通过适应于多量子阱激光器的速率方程的直接模拟分析,得到了注入电流、阱数和腔长对多量子阱激光器的激射阈值、开关延迟时间、弛豫振荡频率和光输出等参量之间的依赖关系.运用相图确立了在瞬态过程中,载流子数密度和光子数密度之间的转化过程.从而为改善量子阱激光器的高频调制特性以及优化设计器件结构参数提供了理论依据.     

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.     

808nmInGaAsP／InGaP／GaAs激光器列阵

研制出３０个单元的ＩｎＧＡａＳｐ／ＩｎＧａＰ／ＧａＡｓ分别限制双异质结单量子阱激光器列阵,器件外微分量子效率达７８％,发向波长８０８ｎｍ,准连续输出的光功率达２７Ｗ。     

半导体带间级联激光器研究进展

半导体带间级联量子阱是实现3~5μm波段中红外激光器的重要前沿,其在半导体光电器件技术、气体检测、医学医疗以及自由空间光通信等诸多领域具有重要科学意义和应用价值。半导体带间级联量子阱发光机理是以二类量子阱中的电子与空穴的带间辐射复合发光为主导,再通过电子注入区与空穴注入区形成级联放大,实现多个量子阱周期内电子与空穴的重复利用。本文综述了半导体带间级联激光器从提出能带结构、外延材料到器件制备技术的发展历程,剖析了器件结构各功能区基本概念和工作原理,介绍了器件结构设计与制备工艺技术难点的里程碑突破,详细解释了载流子再平衡、分别限制层等设计,最后展望了半导体带间级联激光器的发展方向和趋势。     

固定波长应变量子阱的设计与比较

针对ｌｎＧａＡｓＰ材料，我们比较了不同应变与阱宽组合的固定波长应变量子阱特性压应变下量子阱的应变量越大，阱宽越窄，其能带结构越理想张应变下主要由于电子与轻空穴的偶极矩阵元比电子与重空穴的大，以及其较大的态密度，使得张应变量子阱的微分增益比压应变和匹配量子阱的大得多如果固定的张应变量只能使第一子带为ＬＨ，第二子带为ＨＨ，则存在一个最优的阱宽，阱宽太小不能消除ＬＨＩ与ＨＨ２的耦合，阱宽太大又会带来ＬＨ３与ＨＨ２的耦合，同样会有不利影响     

Carrier Dynamics in Quantum Well Lasers

A fully microscopic theory is used to perform an analysis of carrier–carrier and carrier-LO phonon scattering in semiconductor quantum wells, focussing on the high-density case relevant for laser structures. A large variance of scattering times is observed depending on the material parameters, apparently contradicting popular belief in some cases. For instance, carrier–carrier scattering may slow down when the carrier density is increased. Electron-hole scattering times are found to be on the same order of magnitude as carrier-phonon scattering, making the introduction of a separate electron and hole temperature necessary. Heating by optical pumping is investigated and plasma cooling is shown to be possible by optical pumping of the laser structure.     

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.     

Effect of strain on multisubband electron transport in GaAs/InxGa1-xAs coupled quantum well structures

We analyze the strain induced changes in the low temperature multisubband electron mobility mediated through the intersubband interactions in a pseudomorphic GaAs/In_xGa_1−xAs coupled double quantum well structure. We consider the non-phonon scattering mechanisms and study the effect of strain on them. We show that strain reduces the mobility due to ionized impurity (imp-) scattering μ^imp but enhances the mobility due to interface roughness (IR-) scattering μ^IR. For alloy disorder (AL-) scattering as long as the lowest subband is occupied, the effect of strain enhances the mobility μ^AL. However, once the second subband is occupied, there is almost no change, rather decrease in μ^AL for larger well widths. It is gratifying to note that for single subband occupancy, the effect of strain enhances the total mobility μ. On the other hand, for double subband occupancy, initially there is almost no change, but with increase in well width the total mobility reduces. We vary the In composition x from 0.15 to 0.2 and 0.25 and the barrier width between the two wells to analyze their effects on the mobility which shows interesting results. Our study of multisubband mobility can be utilized for the low temperature device applications.     

位移辐射效应对量子阱激光器性能的影响

使用加速器对量子阱半导体激光器进行了总通量1×10¹⁶cm^-2的电子辐照实验.辐射实验结果表明,在辐射环境下激光器的输出功率下降、阈值电流增加.从理论上分析了位移效应对量子阱激光器的影响,并推导了电子通量与相对阈值电流变化、相对输出功率变化的函数关系式.该公式的计算结果与实验测试结果符合很好,有效地反映了电子辐照环境下激光器的性能变化趋势.该公式可用于预测激光器在辐射环境下的性能变化,有着较大实际应用价值.