Probing spin-flip scattering in ballistic nanosystems

Because spin-flip length is longer than the electron mean-free path in a metal, past studies of spin-flip scattering are limited to the diffusive regime. We propose to use a magnetic double barrier tunnel junction to study spin-flip scattering in the nanometer sized spacer layer near the ballistic limit. We extract the voltage and temperature dependence of the spin-flip conductance Gs in the spacer layer from magnetoresistance measurements. In addition to spin scattering information including the mean-free path (70 nm) and the spin-flip length (1.0-2.6 microm) at 4.2 K, this technique also yields information on the density of states and quantum well resonance in the spacer layer.     

Quadrupole spin-flip in elastic scattering of nucleons

We consider the contribution to the depolarization of elastically scattered nucleons which involves transfer of two units of angular momentum to the target nucleus. Our estimates for the depolarization approximate measured values for ⁹Be, ¹⁰B, and ²⁷Al.     

Small-angle neutron spin-flip scattering in ferromagnetic films

This paper reports on the results of reflectometric measurements of anisotropic (Co₆₇Fe₃₁V₂) and almost isotropic (Fe) films prepared by magnetron sputtering. Nonspecular reflections and the corresponding peaks of the intensities of refracted neutrons have been observed for the alloy samples in magnetic fields H ≤ 7 Oe applied in the film plane along the easy magnetization axis. For iron films, angular splitting of the reflected neutron beam becomes observable only at H > 100 Oe and increases with an increase in the magnetic field. A general scheme has been proposed for this small-angle scattering with allowance made for different variants of changes in the Zeeman energy of neutrons. This scheme has allowed us to identify the magnetic structures of Co-Fe films. The magnetization of 0.15-μm-thick films with uniaxial and unidirectional textures leads to the formation of unidirectional textures characterized by different intensity distributions, for which the qualitative differences are retained with an increase in the magnetic field from 7 to 800 Oe. It has been revealed that, for 2.5-μm-thick films with the initial unidirectional texture, the oppositely magnetized states are nonequivalent.     

一种研究自旋翻转散射效应的新方法

金属中自旋翻转散射长度远长于电子平均自由程，近来关于自旋翻转散射效应的研究主要集中于扩散区域．文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法．这种方法可以从磁电输运性质的测量，得出中间隔离层中的自旋翻转散射效应的温度和偏压关系，进一步可以得出诸如电子平均自由程和自旋翻转散射长度等自旋散射信息，以及中间层的态密度和量子阱信息．     

Quark loops and spin-flip effects in pomeron exchange

On the basis of QCD at large distances with taking account of some nonperturbative properties of the theory, the possibility of spin-flip effects in high energy hadron processes at fixed momenta transfer is investigated. It is shown that the diagrams with the quark loops in QCD at large distances may lead to the spin-flip amplitude growing ass fors→∞,t-fixed. The confirmation of this result is obtained by calculations of the nonleading contributions from quark loops int-channel exchange in QED up to the end. Physical mechaisms leading to that behavour of the spin-flip amplitude is discussed. So we conclude that the pomeron has a complicated spin structure.     

Parallel excitation pathways in ultrafast interferometric pump-probe correlation measurements of hot-electron lifetimes in metals

Hot electron (E-E_Fermi=0.75 to 1.55 eV) lifetimes for cesiated Cu(100) and Cu(111) surfaces are measured via interferometric time-resolved two-photon photoemission with a 19-fs intensity FWHM mode locked Ti:sapphire laser at 1.55 eV. The data are analyzed using the optical Bloch equations and a laser pulse characterized in situ via surface second-harmonic generation interferometric autocorrelation. It is found that the retrieved hot-electron lifetimes are unphysically fast, and have a strong dependence on the temperature of the sample and the polarization of the laser. A simple explanation for the data is that the measured signal consists of contributions from transitions through both virtual and real intermediate states. Received: 26 July 2000 / Accepted: 8 September 2000 / Published online: 12 October 2000     

Thermospin effects in a T-shaped spin valves with spin-flip scattering

With the help of the nonequilibrium Green's function technique, we theoretically analyze the thermospin property through a typical T-shaped spin valve with spin-flip scattering in the linear regime. The influences of spin-flip coefficient of interdot λ, spin-flip coefficient of intradot η and interdot hopping coefficient $t+{\delta }_{\sigma }\mathrm{\Delta }t$ on thermospin property are discussed. As interdot hopping coefficient t is equal to energy level ε, the spectrum of $G_s$ shows Fano-like effect with ε variation. Antiresonance position of $G_s$ is almost unchanged and its width becomes narrower with ε increasing. Spin thermopower $S_s$ is close to the maximum of the peak and charge thermopower $S_c$ is equal to zero for $t=\epsilon$. As a result, the pure spin thermopower $S_s$ can be obtained, which means that a pure spin current may be produced by a temperature gradient in our system. It is found that spin figure of merit $Z{T}_s$ can reach a considerable value by adjusting key parameters of the system, such as Δt, β, α, ?. The typical T-shaped spin valve can be treated as a stable thermospin battery which allows to convert the heat energy to spin voltage, thus produces the pure spin current in the device.     

Thermal spin-wave scattering in hot-electron magnetotransport across a spin valve

The role of thermal scattering in spin-dependent transport of hot electrons at 0.9 eV is studied using a spin-valve transistor with a soft Ni(80)Fe(20)/Au/Co base. Spin-dependent scattering makes the collected electron current depend sensitively on the magnetic state of the base. The magnetocurrent reaches 560% at 100 K, decays with increasing temperature, and a huge effect of 350% still remains at room temperature. The results demonstrate that thermal spin waves produce quasielastic spin-flip scattering of hot electrons, resulting in mixing of the two spin channels.     

Effect of spin-flip scattering on electrical transport in magnetic tunnel junctions

By means of the nonequilibrium Green function technique, the effect of spin-flip scatterings on the spin-dependent electrical transport in ferromagnet–insulator–ferromagnet (FM–I–FM) tunnel junctions is investigated. It is shown that Jullière's formula for the tunnel conductance must be modified when including the contribution from the spin-flip scatterings. It is found that the spin-flip scatterings could lead to an angular shift of the tunnel conductance, giving rise to the junction resistance not being the largest when the orientations of magnetizations in the two FM electrodes are antiparallel, which may offer an alternative explanation for such a phenomenon observed previously in experiments in some FM–I–FM junctions. The spin-flip assisted tunneling is also observed.     

Glauber exchange amplitudes for electron-helium scattering

An exact closed form expression is obtained for the Glauber-Bonham-Ochkur exchange amplitudes for the electron helium scattering. The results thus obtained are compared with the results from Ochkur approximation and are used further for obtaining closed form expressions for the differential and total exchange cross-sections for the elastic scattering of electrons from the ground state of helium atom.     

Theory of Raman scattering of light on spin-flip and electronic excitation in Europium chalcogenides

The inelastic scattering of light in magnetic semiconductors from the family of the Europium chalcogenides is discussed in relation with spin-orbit coupling and d-f exchange interaction. It is shown that the Raman processes connected with spin-flip and other electronic excitations can occur in the energy range of 0.1-0.5 eV. In this case and for the typical values of d-f exchange interaction and spin-orbit coupling parameter lying between 0.05 and 0.1 eV, the values of the differentional cross-sections are between 10^-9 - 10^-11 cm²sr^-1 sec. The selection rules for the polarization of the incident and scattered photons as well as the Raman tensors for the four allowed transitions are derived. The possibility of applying spin-flip Raman processes in magnetic semiconductors in the tuning of electromagnetic radiation in Raman lasers is analyzed briefly.     

On the interaction of stimulated spin-flip raman scattering and stimulated recombination radiation in InSb

We have studied the interaction of stimulated spin-flip Raman scattering and stimulated recombination radiation in n-InSb using a CW CO pump laser. A change in linewidth and output power of second Stokes spin-flip radiation is observed when the tuning curve of the first Stokes stimulated spin-flip radiation and the stimulated recombination radiation cross. The observations are explained using a simple rate equation model.     

Role of spin-flip transitions in the anomalous Hall effect of FePt alloy

We carry out ab?initio calculations which demonstrate the importance of the non-spin-conserving part of the spin-orbit interaction for the intrinsic anomalous Hall conductivity of ordered FePt alloys. The impact of this interaction is strongly reduced if Pt is replaced by the lighter isoelectronic element Pd. An analysis of the interband transitions responsible for the anomalous velocity reveals that spin-flip transitions occur not only at avoided band crossings near the Fermi level, but also between well-separated pairs of bands with similar dispersions. We also predict a strong anisotropy in the anomalous Hall conductivity of FePt caused entirely by low-frequency spin-flip transitions.     

Tensor exchange in meson-baryon scattering

Amplitudes for A₂ quantum number exchange in K^±N scattering are determined at p_L = 3, 4 and 6 GeV using new K^±N CEX differential cross-section data supplemented by sum rule estimates of polarizations. Amplitudes for ? quantum number exchange are calculated from πN scattering by SU(3) octet symmetry. This is justified by K^±N FESR, which furthermore are used to resolve ambiguities in the analysis. Comparison with other reactions involving charge and hyperchange exchange shows reasonable overall consistency between data, SU(3), and the tensor amplitudes. The phase of the A₂s-channel helicity flip amplitude is well described by a Regge pole term with trajectory displaced downwards relative to that appropriate for the ? flip amplitude. This is shown to be the main mechanism contributing to the difference between differential cross sections for the K^±N CEX processes, connected by line reversal. It is suggested that this mechanism may persist at higher energies. The A₂ non-flip amplitude does not have the standard peripheral form.     

Particle exchange in KN scattering

Particle exchange is shown to explain much of the physics of KN scattering at low energy. In particular K⁺p data is used to extract the coupling constants of the exchanged particles which are shown to be well determined.     

Exchange energy for conduction electrons in (ZnMn)Se derived from spin-flip Raman scattering and magnetization

Spin-flip Raman scattering, magnetization, and susceptibility data for Zn_0.97Mn_0.03Se are reported. The exchange energy N_oα = 243 ± 10 meV for the conduction electrons is obtained from an analysis of the Raman and magnetization data. At large magnetic fields (H > 60 kOe), the spin-flip energy ΔE saturates at 14 meV. At low fields ΔE does not extrapolate to zero as H → 0, which is characteristic of scattering from donor-bound electrons. The low temperature magnetization curves are fit to a modified Brillouin function. The fit gives $\text{x}\text{?}\text{/x}\text{= 0.67}$ as the fraction of active magnetic ions, and an effective temperature T_eff = T + T_o with T_o = 1.1 K. The magnetic susceptibility follows a Curie-Weiss law between T = 150 and 280 K with a Curie-Weiss temperature θ = ?33 K.