多层超薄薄膜介质光热辐射的三维理论研究

在柱坐标系下，以热传导方程及边界条件为基础，通过Hankel变换及逆变换，得到多层热单介质膜中的温度场.以特殊参数为例，对膜层为三层时的特殊情况进行讨论，得知对于高热 扩散率的薄膜材料，纵向和横向的热导率比值越大，相位的变化也越大.低热扩散率薄膜材 料，不同的纵向和横向的热导率比对光热信号的影响很小.同时，光吸收系数越小，频率变 化对相位影响越明显. 关键词： 多层 热单介质膜 温度场     

面内场对三类硬磁畴的影响

采用直流偏场整形的方法,研究了面内场对石榴石磁泡薄膜中三类硬磁畴的影响.得到面内场作用下三类硬磁畴畴壁中垂直布洛赫线(VBL)是逐步解体的,而且三类硬磁畴具有相同的临界面内场范围［H¹_ip,H²_ip］,其中H¹_ip是硬磁畴中VBL开始丢失时的临界面内场,H²_ip是VBL完全丢失 关键词： 硬磁畴 整形 垂直布洛赫线     

Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

脉冲偏场作用下石榴石磁泡薄膜中布洛赫线的形成

实验研究了石榴石磁泡薄膜中不同脉冲宽度下产生的硬磁畴的动态特性.结果表明：由零偏场下产生的枝状畴收缩而成的哑铃畴均逆时针转动,与产生枝状畴时所用的脉冲偏场的脉冲宽度无关.而固定直流偏场下由软畴段硬化而成的哑铃畴的转动状态,则与所用的硬化脉冲偏场的脉冲宽度有关.低脉冲宽度下硬化成的哑铃畴均逆时针转动,随硬化脉冲宽度的升高,出现混合转动向顺时针转动的过渡.由此揭示了直流偏场和脉冲偏场在石榴石磁泡薄膜中形成正、负垂直布洛赫线的作用. 关键词： 磁畴 磁泡 垂直布洛赫线     

Mo覆盖层对MgO/CoFeB/Mo结构磁各向异性的影响

研究了Mo覆盖层厚度对MgO/CoFeB结构磁各向异性的影响. 研究发现, 加平行磁场生长出来的MgO/CoFeB/Mo样品表现为面内各向异性, 并且随着CoFeB的厚度减小, 面内各向异性逐渐减弱; 在CoFeB厚度减小到1.1 nm时, 仍可以保持面内各向异性, 垂直方向的外加饱和场逐渐减少; 厚度在0.9 nm及以下的情况下, 面内各向异性消失. 改变Mo覆盖层厚度, 当t_Mo= 1.6 nm时, 垂直方向的饱和场最小. 当生长过程的磁场变为垂直磁场时, 不同厚度的Mo覆盖层对MgO/CoFeB 的磁各向异性影响不同. Mo厚度在1 nm及以下时MgO/CoFeB/Mo样品表现为面内各向异性, Mo覆盖层厚度在1.2和5 nm之间时样品出现了垂直磁各向异性; 并且垂直方向的矫顽力也发生了变化, Mo覆盖层厚度为1.4 nm时样品的磁滞损耗会大一些.     

光波经多层介质膜反射的时延表达式

 利用基于多光束干涉原理的等效腔模型导出了多层介质膜的反射系数的递推式，在此基础上证明了在中心频率附近，复反射系数可表示为中心频率处的反射系数与相位因子的积，进而导出了相位角的函数和反射时延的表达式。     

光波经多层介质膜反射的时延表达式

利用基于多光束干涉原理的等效腔模型导出了多层介质膜的反射系数的递推式,在此基础上证明了在中心频率附近,复反射系数可表示为中心频率处的反射系数与相位因子的积,进而导出了相位角的函数和反射时延的表达式。     

MgO/Pt界面对增强Co/Ni多层膜垂直磁各向异性及热稳定性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层和MgO/Pt双底层的Co/Ni多层膜样品, 通过反常霍尔效应研究了不同MgO厚度和退火温度对样品垂直磁各向异性(perpendicular magnetic anisotropy, PMA)的影响. 随着底层中MgO厚度的逐渐增加, 样品的矫顽力也随之增强, 霍尔电阻变化不大; 对样品进行退火处理后发现, 单纯Pt底层的Co/Ni多层膜随着退火温度的升高, 霍尔电阻逐渐降低, 矫顽力则迅速降低, 热稳定性较差; 而当MgO/Pt双底层的样品在200 ℃退火后矫顽力大幅增加, 霍尔电阻略微有所减小, 更高的退火温度使得Co和Ni合金化, 导致多层膜的PMA特征减弱.     

适用于WDM中高质量多层介质膜的设计和生长

我们利用有效反射率方法,研究了多层半导体介质膜的光传输特性,然后设计并生长了TiO2 ZrO2和SiO2组成的多层介质膜。测试结果表明45度入射时,滤长为0．85微米的大部分光被反向,而1．31微米波长的光能够透射,可以被应用在波分复用中。     

HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀

多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求,首先利用考夫曼型离子束刻蚀机开展了HfO₂顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF₃混合气体作为工作气体进行离子束刻蚀实验,获得了优化的离子源工作参数. 结果表明,与纯Ar离子束刻蚀相比,Ar和CHF₃混合气体离子束刻蚀时的HfO₂/光刻胶的选择比大. HfO₂的离子束刻蚀过程中再沉积效应明显,导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性,及时清洗离子源和更换灯丝,可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO₂顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致,为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考. 关键词： 光栅 多层介质膜 离子束刻蚀     

Micromagnetic simulation of ferromagnetic resonance of perpendicular granular media: Influence of the intergranular exchange on the Landau-Lifshitz-Gilbert damping constant

A micromagnetic approach was used to simulate ferromagnetic resonance frequency (FMR) profiles of perpendicular granular CoCrPt-oxide thin films. From the obtained FMR line-width we computed the effective damping constant. The influence of the intergranular exchange on the effective damping was investigated, showing an increase in the damping constant with increase in intergranular exchange coupling. Moreover, the effective damping constant increases with decrease in mesh size of the model, and eventually saturates for mesh sizes of about 1 nm. These dependencies are explained in terms of different modes that can be excited in the granular medium due to interactions between the individual spins.     

Low moment SUL effects on write performances in a trailing shielded pole PMR head

As the magnetic moment of soft under layer (SUL) decreases, the magnetic saturation during the write process becomes severe. It induces some partial erasures in the media write pattern and results in poor write performance such as an output roll-off and signal-to-noise ratio degradation. This erasure is due to the head field longitudinal component at the write gap after the transition writing in the trailing shielded pole perpendicular recording head. In case the SUL has low magnetic moment and high write current is inputted, erasure bubble appears next to the write bubble because the head field perpendicular component switches from positive to negative in the polarity. But the erasure appears even without the negative perpendicular field, and the longitudinal head field of the write gap is dominant for the erasure.     

Influence of strong magnetic field on β decay in the crusts of neutron stars

βdecay in the strong magnetic field of the crusts of neutron stars is analysed by an improved method. The reactions ⁶⁷ Ni(β^-)⁶⁷ Cu and ⁶² Mn\beta ^-62 Fe are investigated as examples. The results show that a weak magnetic field has little effect on βdecay but a strong magnetic field (B>10¹²G) increases β decay rates obviously. The conclusion derived may be crucial to the research of late evolution of neutron stars and nucleosynthesis in r-process.     

单光子时间测量中的本底研究

讨论了单光子时间测量中的本底来源和时间分布, 通过加符合门的方法, 有效地抑止了偶然符合本底, 消除了辐射在光电倍增管光阴极窗上产生的切伦科夫本底.     

Influence of super-strong magnetic field on the electron chemical potential and β decay in the stellar surroundings

In this paper, considering the quantum effect of electrons in a super-strong magnetic field, the influence of a super-strong magnetic field on the chemical potential of a non-zero temperature electron is analyzed, the rates of β decay under the super-strong magnetic field are studied, and then we compare them with the case without a magnetic field. Here, the nucleus ^63Co is investigated in detail as an example. The results show that a magnetic field that is less than 1010 T has little effect on the electron chemical potential and β decay rates, but the super-strong magnetic field that is greater than 1010 T depresses the electron chemical potential and improves the β decay rates clearly.     

电子垂直入射电离氦原子碰撞机理的理论研究

用3C模型和修正后的3C模型在低能、两个出射电子等能分享几何条件下,对电子垂直入射碰撞电离氦原子的三重微分散射截面进行了理论计算,并把计算结果与实验测量结果进行了比较,系统研究了(e,2e)反应中各种屏蔽效应对氦原子三重微分散射截面的影响,同时对截面中形成各峰的碰撞机理做了详细的探讨.研究结果表明:在入射能较低时,各种屏蔽效应对氦原子的三重微分散射截面幅度以及角分布均存在一定影响,并且形成各峰的碰撞机理直接影响截面的变化规律.     

二维随机介质中的能量分布和频谱特性

研究了二维随机介质中能量的空间分布和一些特定区域的频谱特性.结果显示介质中能量呈局域化分布,其分布与介质中颗粒的随机分布有关,还与激发光的波长有密切的关系,介质中能量聚集的区域和介质的准封闭区域有一定关系但并非一一对应.所考察的各准封闭区域的频谱均随时间变化,在同一激发光的激励下各准封闭区域的频谱均不相同,而同一区域在不同的激发光的激励下频谱也不相同.当激发波长与准封闭区域的结构参数偏差较大时,频谱中谱峰会出现此消彼涨的模式竞争现象,而且能量衰减得较快;而当激发波长与该结构参数较接近时,相应的频谱中存在一 关键词： 激光物理 有限时域差分法 局域化 频谱特性     

Influence of exchange coupling on current-driven domain wall motion in a nanowire

In this study, the effect of exchange stiffness constant on current-driven domain wall motion in nanowires with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) has been investigated using micromagnetic simulation. The critical current density in a nanowire with IMA decreases as the exchange stiffness constant decreases because the domain wall width at the upper edge of the nanowire narrows according to the decrease of the exchange stiffness constant. On the other hand, the critical current density in a nanowire with PMA slightly decreases contrary to that of IMA although the domain wall width reasonably decreases as the exchange stiffness constant decreases. The slight reduction rate of the critical current density is due to the increase of the effective hard-axis anisotropy of PMA nanowire.     

Influences of control coherence and decay coherence on optical bistability in a semiconductor quantum well

We discuss the influences of two different types of mechanisms of quantum coherence on optical bistability in a semiconductor quantum well structure.In the first mechanism,only quantum coherence induced by the resonant coupling of a strong control laser is considered.In the second mechanism,the decay coherence is taken into account under the condition where the control field is weak.In two different cases,optical bistability can be obtained through choosing appropriate physical parameters.Our studies show quantum coherence makes the optical nonlinear effect of the system become stronger,which takes an important role in the process of generating optical bistability.A semiconductor quantum well with flexibility and easy integration in design could potentially be exploited in real solid-state devices.     

Influence of Si^4＋ substitution on the temperature-dependent characteristics of YaAl5O12：Ce

A series of aAl5O12：Ce （YAG：Ce） phosphors doped with different Si4＋ concentrations is prepared by solid-state reaction. The temperature dependent characteristics of luminescent spectrum and decay time of Ce3＋ are investigated. With Si4＋ doped, the emission spectrum shows a blue shift clue to a decrease of the splitting of 5d levels of Ce3＋ ion. The thermal stability is greatly improved by adding Si4＋ because the activation energy AE increases from 0.1836 eV to 0.2401 eV. The study of the decay times against temperature for various doping concentrations of Si4＋ shows that the calculated nonradiative decay rate is affected by Si4＋ substitution. The results are explained by the configurational coordinate diagram.