Diode-end-pumped passively mode-locked Nd:LuVO4 laser with a semiconductor saturable-absorber mirror

A diode pumped passively mode-locked Nd:LuVO₄ laser with a semiconductor saturable-absorber mirror (SESAM) is demonstrated. The mode-locked pulses have a pulse duration of about 8.8 ps and a repetition rate of 157 MHz. Under an absorbed pump power of 12 W a maximum output power of 3.71 W is obtained, which gives an optical conversion efficiency of 31%. Our results show that Nd:LuVO₄ is a promising gain medium for the high power mode-locked solid-state lasers.     

Passively mode-locked 914-nm Nd:YVO4 laser

We demonstrate what is to our knowledge the first mode-locked Nd:YVO4 laser operating on the 4F3/2-4I9/2 transition at 914 nm. Using a semiconductor saturable-absorber mirror for passive mode locking, we have obtained 3-ps pulses at a repetition rate of 233.8 MHz. The laser is based on a standard delta cavity and is pumped by a Ti:sapphire laser. We obtained an average output power of 42 mW through one mirror and an accumulated output power of approximately 150 mW (through all cavity mirrors) at a pump power of 1.4 W.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mirror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power of 1.1 W was obtained with the slope efficiency of 18.1%.     

Passively mode-locked Nd：GdVO4 laser at 912nm

This paper demonstrates the passively mode-locked Nd：GdVO4 laser operating on the ^4F3/2-^4I9/2 transition at 912 nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave modelocked 912nm laser was achieved with a repetition rate of 176 MHz. At the incident pump power of 17.7W, 22.6mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3%.     

半导体可饱和吸收镜锁模的钒酸盐混晶Nd:Gd0.1Y0.9VO4激光器

采用Nd∶Gd_0.1Y_0.9VO₄晶体作为增益介质和Z形腔结构,分析比较了腔内加入自行设计的镀和不镀高反膜的半导体可饱和吸收镜（SESAM）对激光锁模的影响.在腔内加入镀膜SESAM后,激光锁模阈值由1.69W下降为1.45W,并且锁模更稳定.在2W抽运功率下,在1064nm中心波长处获得了双端250mW的连续锁模输出,光光转换效率为12.5%,重复频率为142.25MHz. 关键词： 0.1Y_0.9VO₄激光器')" href="#">Nd∶Gd_0.1Y_0.9VO₄激光器 半导体可饱和吸收镜 连续锁模     

Passively mode-locked high-power Nd:YAG lasers. with multiple laser heads

We discuss power scaling of passively mode-locked lasers using multiple laser heads in the resonator. We experimentally compared two different approaches for the cavity design, both using three side-pumped Nd:YAG laser heads. We obtained a record-high average output power of up to 27 W with close to diffraction-limited beam quality, a pulse duration of 19 ps, a pulse energy of 0.5 7J, and 23 kW peak power. Single-pass second-harmonic generation in a 10-mm-long LBO crystal yields 16.2 W of 532-nm radiation.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

LD泵浦Nd∶LuVO4/Cr4+∶YAG被动调Q激光器

采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体，利用Cr4+∶YAG晶体作为可饱和吸收元件，实现了1.06 μm激光的被动调Q运转.在泵浦功率为19.1 W时，获得最高平均输出功率为4.58 W，脉冲宽度为84 ns，单脉冲能量为36.6 μJ以及峰值功率为436.2 W的激光脉冲.     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

Optimization of diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO4 laser with a GaAs saturable absorber

By considering the single-photon absorption (SPA) and two-photon absorption (TPA) processes in the GaAs saturable absorber, the coupled rate equations for a diode-pumped passively Q-switched and mode-locked (QML) laser with GaAs coupler under Gaussian approximation are given. The key parameters of an optimally coupled passively QML laser can be obtained by numerically solving these equations. These key parameters include the parameters of the gain medium, the saturable absorber and the resonator, which can maximize the pulse energy of singly Q-switched envelope. Sample calculations for a diode-pumped passively Q-switched mode-locked c-cut Nd:GdVO₄ laser with a GaAs saturable absorber are presented to demonstrate the optimal method applicable.     

Passively mode-locked Raman laser

We report on the observation of a mode-locked laser generated with a crystalline whispering gallery mode resonator pumped with a continuous wave laser. Optical pumping of the resonator generates an optical frequency comb with phase locked components at the Raman offset of the resonator host material. Phase locking of the modes is confirmed via measurement of the radio-frequency beat note produced by the comb on a fast photodiode. Neither the conventional Kerr comb nor hyperparametric oscillation is observed when the comb is present. We present a theoretical explanation of the effect.     

Diode-pumped Q-switched and mode-locked Nd:LuVO4/KTP green laser with AO and Cr4+:YAG saturable absorber

A diode-pumped Q-switched and mode-locked (QML) Nd:LuVO₄/KTP green laser with acousto-optic modulator (AOM) and Cr⁴⁺:YAG saturable absorber is presented. By inserting an AOM into the laser cavity, the stability of the QML green laser pulse with AO and Cr⁴⁺:YAG is improved, the modulation depth is increased and the pulse width of Q-switched pulse envelope is significantly compressed in comparison with that of the singly passively QML green laser with Cr⁴⁺:YAG. The experimental results show that the peak power of the doubly QML green laser pulse is much higher than that of the singly passively QML green laser pulse.     

Diode-pumped continuous-wave Nd:LuVO4 laser operating at 916 nm

We realized an efficient diode-pumped Nd:LuVO4 continuous-wave (CW) laser operating at 916 nm. Laser experiments with 0.5 at. % Nd-doped Nd:LuVO4 crystals of various lengths and cutting directions were also investigated. The maximum output power of 930 mW was obtained with a slope efficiency of 27.2% and an optical conversion efficiency of 20.8% at the absorbed pump power of 4.5 W. The laser experiment shows that Nd:LuVO4 crystal can be used for an efficient diode-pumped laser system.     

Passively Q-switched laser performance of a composite Nd:YVO_{4}/Nd:YVO_{4}/Nd:YVO_{4} crystal with GaAs saturable absorber

By using GaAs wafer as the saturable absorber, the laser-diode pumped passively Q-switched composite Nd:YVO \(_{4}\) laser has been successfully demonstrated. For this passively Q-switched operation, the average output power obtained is as high as 846 mW at the incident pump power of 5.31 W, while the pulse duration is as short as 14.5 ns. The largest single-pulse energy of 2.49 \(\upmu \) J and the highest peak power of 166 W are obtained. The GaAs saturable absorber with thickness of 400 \(\upmu \) m has shown more excellent laser performance comparing with 700 \(\upmu \) m thick GaAs.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

Passively Q-switched and mode-locked laser performance of the mixed crystals with GaAs saturable absorber

By using the mixed crystals Nd:Lu_0.33Y_0.37Gd_0.3VO₄, Nd:Lu_0.5Y_0.5VO₄ and Nd:Lu_0.15Y_0.85VO₄ as laser media, the LD pumped passively Q-switched and mode-locked (QML) lasers with GaAs saturable absorber are realized. The average output power, the pulse width and the repetition rates have been measured and compared. The experimental results show that the passively Q-switched and mode-locked Nd:Lu_0.33Y_0.37Gd_0.3VO₄ laser can generate shorter pulse width with higher peak power due to broader fluorescence line-width. By considering the Gaussian distribution of the intracavity photon density and the influence of the continuous pump rate, the coupled rate equations for QML lasers with GaAs saturable absorber are given. The theoretical solutions of the equations are in agreement with the experimental results.     

GaAs被动调Q Nd:YAG激光器激光特性的研究

报道了用半导体材料 Ga As实现氙灯抽运 Nd:YAG激光器的被动调 Q运转 ,测量了激光器的阈值、脉冲宽度和输出能量。从 Ga As的能级结构出发 ,理论上研究了 Ga As材料的饱和吸收原理 ,建立了调 Q激光器速率方程并给出了数值解 ,对理论结果与实验结果进行了比较和讨论。     

Continuous-wave and pulsed laser performance of Nd:LuVO4 crystal

Received August 11, 2003 We report continuous-wave and actively Q-switched laser performance achieved with Nd:LuVO4 crystal for the 4F(3/2) --> 4I(1/2) transition (corresponding wavelength of 1065.8 nm) under high-power diode pumping. Continuous-wave output power of 12.55 W is obtained with an optical conversion efficiency of 50.2%. In actively Q-switched operation the average output power reaches 5.42 W at a pulse repetition frequency of 40 kHz with 18 W of pump power incident upon the crystal, yielding an optical conversion efficiency of 30.1%. The pulse energy and peak power reach 138 microJ and 16.2 kW, respectively, at a pulse repetition frequency of 25 kHz under a pump power of 14.2 W; the pulse duration is 8.5 ns.     

High-power diode-pumped Q-switched and mode-locked Nd:YVO(4) laser with a Cr(4+):YAG saturable absorber

We demonstrate a high-power passively Q -switched and mode-locked Nd:YVO(4) laser with a Cr(4+):YAG saturable absorber. 2.7 W of average power with an 18-kHz Q -switched repetition rate was generated at a 12.5-W pump power. The peak power of a single pulse near the maximum of the Q -switched envelope was greater than 100 kW.