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1.
Diode-pumped continuous-wave Nd:LuVO4 laser operating at 916 nm 总被引:1,自引:0,他引:1
We realized an efficient diode-pumped Nd:LuVO4 continuous-wave (CW) laser operating at 916 nm. Laser experiments with 0.5 at. % Nd-doped Nd:LuVO4 crystals of various lengths and cutting directions were also investigated. The maximum output power of 930 mW was obtained with a slope efficiency of 27.2% and an optical conversion efficiency of 20.8% at the absorbed pump power of 4.5 W. The laser experiment shows that Nd:LuVO4 crystal can be used for an efficient diode-pumped laser system. 相似文献
2.
Sun HD Valentine GJ Macaluso R Calvez S Burns D Dawson MD Jouhti T Pessa M 《Optics letters》2002,27(23):2124-2126
A novel low-loss, single-step-growth 1.3-microm GaInNAs saturable Bragg reflector mode-locking element has been developed. Combined radial thickness and postgrowth annealing control have permitted a tuning range of 46 nm for passive mode locking to be demonstrated from one wafer. With this structure, stabilized mode locking was obtained from quasi-cw diode-pumped Nd:YLF and Nd:YALO lasers operating at 1314 and 1342 nm, respectively, with average on-time output powers of as much as 20 W and pulse durations as low as 22 ps. 相似文献
3.
LI Ping WANG Qingpu ZHANG Xinyu ZHAO Shenzi GAO Da LIU Xunmin SUN Lianke ZHANG Shaojun HUANG Bobiao LIN Benfu ZHANG Fanwen 《中国光学快报(英文版)》2000,9(2)
It is investigated the properties of a diode-pumped Nd: Sr5 ( PO4 )3F laser that is passively Q-switched by a thin, single crystal GaAs wafer. The short high-peak-power pulses of the laser have been obtained. The pulse energies, pulse widths and pulse repetition rates for different conditions have been measured and the experimental results show that GaAs is an excellent passive Q-switch of the diode-pumped Nd: Sr5(PO4)3F lasers. 相似文献
4.
Rui-Hua Wang Xiu-Wei Fan Hai-Xia Wang Hai-Tao Huang Li Zhu Jing-Liang He 《Laser Physics》2009,19(9):1882-1885
The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO4 laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average
output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about
160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present
LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete
pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence,
modulation depth, recovery time and damage threshold in semiconductors. 相似文献
5.
1 IntroductionQ- switching Of diode-pumped lasers iS an effective technique because they provideshort duration optical pulses required for laser ranging, nonlinear studies, medidne andother important applications[1--#]. It is obvious that the replacement of an organic dyewith a solid-state one makeS a laser more convenient tO use. Semiconductor materialsare attractive for saturable absorber because Of the large optical nonlinearities that can beobtained, particularly in quantum--well .t..t..… 相似文献
6.
S. P. Ng D. Y. Tang J. Kong L. J. Qin X. L. Meng Z. J. Xiong 《Applied physics. B, Lasers and optics》2005,80(4-5):475-477
We report a diode-pumped Nd:Gd0.64Y0.36VO4 laser passively mode locked by using a GaAs saturable absorber mirror. Both the Q-switched and continuous-wave (CW) mode locking were experimentally realized. The CW mode-locked pulses have a pulse width of about 8.8 ps at a repetition rate of 161.3 MHz. Limited by the available pump power, a maximum output power of 2.47 W was obtained for the CW mode-locked pulses with a slope efficiency of about 26.6%. 相似文献
7.
L. J. Qin D. Y. Tang G. Q. Xie H. Luo C. M. Dong Z. T. Jia X. T. Tao 《Laser Physics》2008,18(6):719-721
We have experimentally studied the passive Q-switching performance of a diode-pumped Nd-doped gadolinium gallium garnet (Nd:GGG) laser with a GaAs saturable absorber. Stable Q-switched pulses as short as 9 ns with a repetition rate of 196.1 kHz have been obtained with an appropriately coated GaAs wafer used as the output coupler. At 12.44 W of the absorbed pump power, an average output power of 1.03 W has been obtained and the corresponding pulse energy and peak power are 5.25 μJ and 0.58 kW, respectively. 相似文献
8.
We report on a diode end-pumped passively mode-locked Nd:GdVO4 laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO4 laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi. 相似文献
9.
Different techniques to control the pulse duration of a diode-pumped passively Q-switched intracavity frequency-doubled laser are studied, which shows that varying the pump beam radius in the gain medium and mode-spot sizes on a saturable absorber are two efficient ways to control the pulse duration. The output pulse durations obtained from a diode-pumped passively Q-switched Nd:GdVO4/KTP laser with a GaAs wafer can be controlled in a wide range over 100 ns, which indicates a simple way of controlling the pulse duration of the intracavity frequency-doubled passively Q-switched laser. 相似文献
10.
11.
Continuous-wave passive mode locking of a diode-pumped Nd:KGd(WO(4))(2) laser is demonstrated. The use of a saturable Bragg reflector as the mode-locking element permits the generation of 6.3-ps pulses, assuming a sech(2) pulse shape. An output power of 1 W was obtained, which corresponds to a slope efficiency of 34.5%. 相似文献
12.
We propose a diode end-pumped passively mode-locked Nd: Gd0.42 Y0.58 VO4 (Nd: GdYVO4) laser at 1064nm using a GaAs absorber grown at low temperature as the output coupler.Stable continuous-wave (CW) mode locking with a 5.1-ps pulse duration at a repetition rate of 113MHz is obtained.The maximum average output power is 2.29W at the incident pump power of 12W with the slope efficiency of about 24.8%. 相似文献
13.
Self-starting mode locking of a Nd:glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs 总被引:5,自引:0,他引:5
Leitner M Glas P Sandrock T Wrage M Apostolopoulos G Riedel A Kostial H Herfort J Friedland KJ Däweritz L 《Optics letters》1999,24(22):1567-1569
We present a diode-pumped Nd:glass fiber laser, emitting at 1060 nm, that is passively mode locked by fast nonlinear loss in low-temperature-grown GaAs (LT-GaAs). This new mode-locking mechanism is based on intensity-dependent defocusing in LT-GaAs that occurs after nonresonant generation of free carriers by two-photon absorption. Mode locking is self-starting and produces pulses as short as 4.1 ps. 相似文献
14.
We present the operation of a diode-pumped high-power electro-optically Q-switched 4 W Nd:LuAG laser operating at 1064 nm. At an absorbed optical power of 20 W, the laser described provides a maximum output of 3.5 W average power at a repetition rate of 50 Hz. The output varies up to a factor of 1.3% for about 1 h operation with a peak power of 280 kW, with the laser beam quality in the TEM00 mode. 相似文献
15.
16.
A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained. 相似文献
17.
用脉冲激光二极管阵列(LDA)作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As+注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60%的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95%以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论. 相似文献
18.
Received August 11, 2003 We report continuous-wave and actively Q-switched laser performance achieved with Nd:LuVO4 crystal for the 4F(3/2) --> 4I(1/2) transition (corresponding wavelength of 1065.8 nm) under high-power diode pumping. Continuous-wave output power of 12.55 W is obtained with an optical conversion efficiency of 50.2%. In actively Q-switched operation the average output power reaches 5.42 W at a pulse repetition frequency of 40 kHz with 18 W of pump power incident upon the crystal, yielding an optical conversion efficiency of 30.1%. The pulse energy and peak power reach 138 microJ and 16.2 kW, respectively, at a pulse repetition frequency of 25 kHz under a pump power of 14.2 W; the pulse duration is 8.5 ns. 相似文献
19.
用离子注入的半绝缘GaAs晶片作为吸收体和输出镜,在双包层掺镱光纤激光器上实现了调Q锁模. 离子注入的能量为400keV的As+离子,注入剂量为1016/cm2,然后在600℃下退火20min. 当抽运功率为5W时, 脉冲平均输出功率为200mW, 调Q包络重复频率为50kHz, 半高宽为4μs,锁模脉冲重复频率为15MHz.
关键词:
离子注入GaAs
掺镱光纤激光器
被动调Q锁模 相似文献
20.
Liu YH Xie ZD Pan SD Lv XJ Yuan Y Hu XP Lu J Zhao LN Chen CD Zhao G Zhu SN 《Optics letters》2011,36(5):698-700
In this Letter, we demonstrate a nonlinear-mirror (NLM) mode-locked diode-pumped solid-state Nd:YVO4 laser operating at 1342?nm, in which the NLM comprises a periodically poled LiNbO3 crystal and a dichroic mirror. The self-starting threshold for cw mode locking is 1.5?W, which is significantly lower than that of saturable absorber mode locking. An average power of 1.52?W at 1342?nm is obtained under diode pump power of 10?W at 808?nm, with the slope efficiency being up to 16.8%. The pulse width and the repetition rate of the mode-locked laser output are about 9.5?ps and 101?MHz, respectively. 相似文献