Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling

The paper reports on the barrier mid-wave infrared InAs/InAsSb (x_Sb = 0.4) type-II superlattice detector operating below thermoelectrical cooling. AlAsSb with Sb composition, x_Sb = 0.97; barrier doping, N_D < 2×10¹⁶ cm^?3 leading to valence band offset below 100 meV in relation to the active layer doping, N_D = 5×10¹⁵ cm^?3 was proved to be proper material not introducing extra barrier in valence band in the analyzed temperature range in XBn architectures. The detectivity of the simulated structure was assessed at the level of ～ 10¹¹ Jones at T ～ 100 K assuming absorber thickness, d = 3 μm. The detector’s architecture for high frequency response operation, τ_s = 420 ps (T ～ 77 K) was presented with a reduced active layer of d = 1 μm.     

Investigation of irradiated and annealed high-temperature superconducting films with the Umka nanotechnological complex

Superconducting YBa₂Cu₃O_{7 ? x} films were fabricated by dc magnetron sputtering. They were irradiated with 1.2-MeV He⁺ ions to doses of 4 × 10¹⁵, 8 × 10¹⁵, 16 × 10¹⁵, and 32 × 10¹⁵ cm^?2. The irradiated films were subjected to stepwise (30 min per step) vacuum annealing at 500, 600, 700, 800, and 900°C. After vacuum annealing, the samples irradiated to doses of 4 × 10¹⁵, 8 × 10¹⁵, and 16 × 10¹⁵ cm^?2 exhibited partial recovery of their critical temperature, whereas the sample with a dose of 32 × 10¹⁵ cm^?2 exhibited no signs of partial recovery of T _C. Investigation of the irradiated annealed samples with the Umka nanotechnological complex has revealed damaged surface regions extended to a relatively large (several tenths of a micrometer) depth.     

Nonlinear plasma spectroscopy of the hydrogen balmer-α line

The plasma line broadening of H_α fine-structure lines is investigated with Doppler-free saturation and polarization spectroscopy in He-H gas and are discharges at plasma densities of 10⁸ cm^?3 <N?1.4×10¹⁴ cm^?3. With a single-mode laser, the shift and broadening of four resolved H_α fs lines are measured in a low pressure discharge forN<10¹¹ cm^?3. With an intense, broadband multi-mode laser the plasma effects of H_α are investigated up toN=1.4×10¹⁴ cm^?3 in a hollow cathode are. Calculations in the classical phase shift and impact approximations can explain the experimental data and peculiarities of the low-density plasma effects and show that the ions are the dominant perturbers. Ion dynamical effects, perturber mass and temperature dependence, are observed and interpreted. Applications of the nonlinear techniques to other H and D lines, other atoms, and for H and D plasma diagnostics are discussed.     

Amorphous GaP produced by ion implantation

Two types of non-crystalline states (“disordered” and “amorphous”) of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the “disordered” state to the “amorphous” state was observed.The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV ? N⁺ ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity.The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose.The optical absorption coefficient α and electric conductivity σ of GaP crystals implanted with 200 keV?N⁺ ions of 1 × 10¹⁶ cm^?2 were expressed as αhν = C(hν ? E₀)ⁿ and log $\text{σ = A ? BT}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>4</mtext>}}$, respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order nor a short range order (“disordered state”).In the sample implanted at 1 × 10¹⁶ cm^?2, a structural phase-transition-like annealing stage was observed at around 400°C. That is, the optical absorption coefficient α abruptly fell off from 6 × 10⁴ to 7 × 10³ cm^?1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing.These facts lead us to believe that heavily implanted GaP, followed by annealing at around 400°C, is in the “amorphous” state, although as-implanted Gap is not in the “amorphous” state but in the “disordered” state.     

The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO2-Si substrates

Abstract

The annealing of bare thermal oxide on silicon at 400–500°C in a hydrogen bearing gas results in a reduced density of states N_ss at the substrate silicon/oxide interface. Treatments of this type have played a role in MOS processing schedules for several years. However, a similar approach applied to large areas (cm²) of poly-silicon coated oxide appears to be less effective in reducing N_ss. This may be due to the polysilicon acting as a partially impermeable barrier which tends to starve the substrate/oxide interface of hydrogen.

In the present work hydrogenation of 2-inch diameter, polysilicon coated wafers has been accomplished by hydrogen ion implantation. H2⁺ ions of 135 kV energy were implanted (to a dose of 10¹⁵ cm^?2) through a 7000 Å polysilicon coating into an underlying 1400 Å SiO₂ layer. The polysilicon was removed after 30-min anneals carried out in pure N₂ at 300, 400 or 500°C. Aluminium dots, 1 mm in diameter were then deposited on to the oxide and high frequency (1 MHz) and quasistatic C-V curves recorded for determinations of Nss. Control anneals on unimplanted material were carried out in pure N₂ and N₂-H₂ ambients. Control samples annealed in pure N₂ with their polysilicon coating intact had mid-gap N_ss values of not less than 4 × 10¹⁰ cm^?2 eV^?1. The corresponding value after N₂-H₂ anneals on polysilicon-free wafers was 3 × 10¹⁰. H₂ ⁺ implanted samples annealed in pure N₂ with their polysilicon intact had mid-gap N_ss values of 1 × 10¹⁰ cm^?2 eV^?1.

The effectiveness of ion beam hydrogenation may depend upon confinement of the associated displacement damage to the polysilicon. This allows the implanted hydrogen to be activated within the SiO₂ at temperatures similar to those employed for normal hydrogeneous gas annealing of the substrate silicon/oxide interface.     

LED-based Fourier-transform spectroscopy of H2 18O in the range 15000–15700 cm−1

The spectrum of H₂ ¹⁸O in the range 15000–15700 cm^?1 has been recorded for the first time on a Fourier-transform spectrometer using a high-brightness light-emitting diode as a radiation source. The measurements have been conducted at room temperature with a resolution of 0.05 cm^?1. A threshold sensitivity in absorption of 2 × 10^?7 cm^?1 has been achieved due to both the use of a light-emitting diode and optimization of the multipass cell with a base length of 60 cm, which ensured a 19.2-m length of the absorbing layer. A high signal-to-noise ratio (S/N = 2000–10000) made it possible to record about 670 water-vapor lines with intensities of 1.0 × 10^?26–2.2 × 10^–24 cm/mol at 296 K. The energies of 265 vibrational-rotational levels of the H₂ ¹⁸O molecule are determined and attributed to seven vibrational states, namely, (033), (113), (212), (231), (311), (330), and (410).     

Investigations on the effect of argon ion bombardment on the structural and optical properties of crystalline gallium antimonide

The effects of bombardment of 250 keV argon ions in n-type GaSb at fluences 2×10¹⁵ and 5×10¹⁵ ions cm^?2 were investigated by high-resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) and scanning electron microscopy (SEM). HRXRD studies revealed the presence of radiation-damaged layer (strained) peak in addition to the substrate peak. The variation in the lattice constant indicates the strain in the bombarded region. The out-of-plane (?_⊥) and in-plane strains (?_|) determined from the profiles of several symmetric and asymmetric Bragg reflections, respectively, were found to change with the ion fluence. Simulations of XRD patterns using dynamical theory of X-ray scattering (single-layer model) for the damaged layer yielded good fits to the recorded profiles. FTIR transmission studies showed that the optical density (α·d) of GaSb bombarded with different fluences increases near the band edge with increase in ion fluence, indicating the increase in the defect concentration. The density of the defects in the samples bombarded with different fluences was in the range of 3.20×10²¹–3.80×10²¹ cm^?3. The tailing energy estimated from the transmission spectra was found to change from 12.0 to 58.0 meV with increasing ion fluences, indicating the decrease of crystallinity at higher fluences. SEM micrographs showed the swelling of the bombarded surface of about 0.33 μm for the fluence of 2×10¹⁵ ions cm^?2, which increased to 0.57 μm for the fluence of 5×10¹⁵ ions cm^?2.     

Growth and spectroscopic studies of NaLa(MoO4)2:Tm3+ crystals: A new promising laser material

Single crystals of scheelite-like disordered double molybdate NaLa(MoO₄)₂ doped with thulium ions with dopant concentrations of 3.0 × 10¹⁹ and 1.2 × 10²⁰ cm^?3 are grown by the Czochralski method. Spectral and luminescent studies of crystals grown are performed in wavelength ranges of 800 nm (the transitions ³ H ₆?³ H ₄) and 2 μm (the transitions ³ H ₆?³ F ₄), including the measurements of the polarized absorption and luminescence spectra of these crystals and the decay kinetics of their excited states. A model that satisfactorily describes the decay kinetics of the luminescence from the ³ H ₄ level taking into account cross-relaxation interactions is proposed. The prospects for the use of these crystals as active media in two-micrometer solid-state lasers are discussed.     

High precision spectrum of N2O at 4.5 μm and determination of molecular constants for the ν3 and the (ν2 + ν3 − ν2) bands

A high precision wavenumber calibration has been achieved for the spectrum of N₂O at 4.5 μm. The values of the wavenumbers are reported for the (00°1-00°0) and for the (01¹1-01¹0) transitions. A new set of molecular constants is given for the upper and lower levels of these two transitions. In particular, the value of the H constant for the ground state (?2.02 ± 0.4) × 10^?13 cm^?1 determined in this work is significantly different from previous results.     

Einfluß der Bestrahlung mit hochenergetischen Sauerstoffionen auf die kritische Stromdichte supraleitender Nb3Sn-Schichten

Nb₃Sn diffusion layers were irradiated with 24 MeV oxygen ions at fluences from 3.2×10¹³ up to 1.6×10¹⁵ cm^?2. The enhancement of the superconducting critical current density Δj _c has been measured as a function of fluence and of the external magnetic fieldH _a(j _c⊥H _a). The thermal annealing treatment of the defects concerning thej _c and induced by irradiation, has been investigated in the temperature region from 200 to 800 °C. The results are compared with the measurements of irradiation of Nb₃Sn with protons and deuterons. The measured data are discussed in connection with size of defects, cluster distance, fluxline distance and pinning-force.     

Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

Optical spectra and electrical conductivity of silicon-doped epitaxial gallium nitride layers with uncompensated donor concentrations N _D — N _A up to 4.8 × 10¹⁹ cm^?3 at T ≈ 5 K have been studied. As follows from the current-voltage characteristics, at a doping level of ～3 × 10¹⁸ cm^?3 an impurity band is formed and an increase of donor concentration by one more order of magnitude leads to the merging of the impurity band with the conduction band. The transformation of exciton reflection spectra suggests that the formation of the impurity band triggers effective exciton screening at low temperatures. In a sample with N _D — N _A = 3.4 × 10¹⁸ cm^?3, luminescence spectra are still produced by radiation of free and bound excitons. In a sample with N _D — N _A = 4.8 × 10¹⁹ cm^?3, Coulomb interaction is already completely suppressed, with the luminescence spectrum consisting of bands deriving from impurity-band-valence band and conduction-band-valence band radiative transitions.     

Deep levels in gallium arsenide by capacitance methods

The three capacitance methods, i.e., TSCAP, PHCAP, and transient capacitance measurements, are applied to determine electronic properties of deep levels inn-GaAs. In the boat-grown wafer detected are the 0.30 eV electron trap withN _T =3.6×10¹⁶ cm^?3 andS _n =2.4×10^?15 cm², and the 0.75 eV electron trap withN _T =2.0×10¹⁶ cm^?3 andS _n =1.2×10^?14 cm². In the epitaxial wafer, the 0.45 eV hole trap is detected withN _T >1.5×10¹³ cm^?3 andS _p =1.4×10^?14 cm² as well as the 0.75 eV electron trap withN _T =2.4×10¹³ cm^?3.     

Growth of high quality non-linear optical crystal zinc germanium phosphide for Mid-infrared optical parametric oscillator

ZnGeP₂ single crystals were grown from Vertical Bridgman method. High-quality near-stoichiometric ZnGeP₂ single crystals were obtained in the diameter of 30 mm and length of 120 mm. The results showed that after thermal annealing of the crystals the optical absorption coefficient was below 0.03 cm^?1 at 2.05 μm, and ～0.02 cm^?1 at 3–8 μm. The low absorption loss ZnGeP₂ samples with dimension of 6 × 6 × 18 mm³ were cut from the annealed ingots for 3–5 μm optical parametric oscillation (OPO) experiments. For OPO experiment, we obtained up to 8.7 W output in the 3–5 μm wavelength range (with signal of 3.80 μm and idler of 4.45 μm, respectively) pumped by a 16.3 W 2.05 μm Tm,Ho:GdVO₄ laser at pulse repetition rate of 10 kHz, which corresponded to a conversion efficiency of 53.4% and slope efficiency of 64.8%, respectively.     

Formation of bubbles and blisters in hydrogen ion implanted polycrystalline tungsten

ABSTRACT

Tungsten (W) has been regarded as one of the most promising plasma facing materials (PFMs) in fusion reactors. The formation of bubbles and blisters during hydrogen (H) irradiation will affect the properties of W. The dependence of implantation conditions, such as fluence and energy, is therefore of great interest. In this work, polycrystalline tungsten samples were separated into two groups for study. The thick samples were implanted by 18?keV H₃⁺ ions to fluences of 1?×?10¹⁸, 1?×?10¹⁹ and 1?×?10²⁰ H⁺/cm², respectively. Another thick sample was also implanted by 80?keV H₂⁺ ions to a fluence of 2?×?10¹⁷ H⁺/cm² for comparison. Moreover, the thin samples were implanted by 18?keV H₃⁺ ions to fluences of 9.38?×?10¹⁶, 1.88?×?10¹⁷ and 5.63?×?10¹⁷ H⁺/cm², respectively. Focused ion beam (FIB) combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for micro-structure analysis, while time-of-flight ion mass spectrometry (ToF-SIMS) was used to characterize the H depth profile. It is indicated that bubbles and blisters could form successively with increasing H⁺ fluence. H bubbles are formed at a fluence of ～5.63?×?10¹⁷ H⁺/cm², and H blisters are formed at ～1?×?10¹⁹ H⁺/cm² for 18?keV H₃⁺ implantation. On the other hand, 80?keV H₂⁺ ions can create more trapping sites in a shallow projected range, and thus enhancing the blisters formation with a relatively lower fluence of 2?×?10^17?H⁺/cm². The crack-like microstructures beneath the blisters are also observed and prefer to form on the deep side of the implanted range.     

Ionization mechanisms of aluminum acceptor impurity in silicon

Processes of ionization of shallow acceptor centers (ACs) in silicon are studied. In crystalline silicon samples with phosphorus (1.6×10¹³, 2.7×10¹³, and 2.3×10¹⁵cm^?3) and boron (1.3×10¹⁵cm^?3) impurities, _μAl impurity atoms were produced by implantation of negative muons. It is found that thermal ionization is the main mechanism for ionizing the Al acceptor impurity in both p-type and n-type silicon with an impurity concentration of ?10¹⁵cm^?3 at T>45 K. The thermal ionization rate of Al ACs in Si varies from ～10⁵ to ～10⁶s^?1 in the temperature range 45–55 K.     

Enhancement of the superconducting critical temperature Tc of niobium by radiation damage

5 μm niobium foils were irradiated with 25 MeV oxygen ions at 20 K, 33 K and 145 K up to fluences of 1.3 × 10¹⁶cm^-2 corresponding to a damage rate decrease of 99%. T_c versusresistivity shows a minimum depending on the irradiation temperature. At high fluences and subsequent annealing T_c is enhanced compared to the unirradiated value and the transition is broadened by a factor of about 30.     

Chemisorption of H2 on W(100): Absolute sticking probability,coverage, and electron stimulated desorption

Measurements of both the absolute sticking probability near normal incidence and the coverage of H₂ adsorbed on W(100) at ~ 300K have been made using a precision gas dosing system; a known fraction of the molecules entering the vacuum chamber struck the sample crystal before reaching a mass spectrometer detector. The initial sticking probability S₀ for H₂/W(100) is 0.51 ± 0.03; the hydrogen coverage extrapolated to S = 0 is 2.0 × 10¹⁵ atoms cm^?2. The initial sticking probability S₀ for D₂/W(100) is 0.57 ± 0.03; the isotope effect for sticking probability is smaller than previously reported. Electron stimulated desorption (ESD) studies reveal that the low coverage β₂ hydrogen state on W(100) yields H⁺ ions upon bombardment by 100 eV electrons; the ion desorption cross section is ~ 1.8 × 10^?23 cm². The H⁺ ion cross section at saturation hydrogen coverage when the β₁ state is fully populated is ? 10^?25 cm². An isotope effect in electron stimulated desorption of H⁺ and D⁺ has been found. The H⁺ ion yield is ? 100 × greater than the D⁺ ion yield, in agreement with theory.     

Photoluminescent studies of the condensed phase in phosphorus-doped silicon

Photoluminescent studies give evidence for the existence of the electron—hole droplet in phosphorus-doped silicon in the impurity concentration range 9.0 × 10¹⁵cm^?3 ? N_D ? 4.3 × 10¹⁹cm^?3.     

The ground state of molecular hydrogen

The v = 0?0 quadrupole spectrum of H₂ has been recorded using a 0.005-cm^?1 resolution Fourier transform spectrometer. The rotational lines S(1) through S(5) are observable in the spectra, in the region 587 to 1447 cm^?1. The spectral position for S(0) was also obtained from its v = 1-0 ground-state combination difference. The high accuracy of the H₂ measurements has permitted a determination of four rotational constants. These are (in cm^?1) B₀ = 59.33455(6); D₀ = 0.045682(4); H₀ = 4.854(12) × 10^?5; L₀ = ?5.41(12) × 10^?8. The hydrogen line positions will facilitate studies of structure and dynamics in astrophysical objects exhibiting infrared H₂ spectra. The absolute accuracy of frequency calibration over wide spectral ranges was verified using 10-μm CO₂ and 3.39-μm CH₄ laser frequencies. Standard frequencies for 5-μm CO were found to be high by 12 MHz (3.9 × 10^?4 cm^?1).     

Some studies of BF2 and B+F implanted Silicon

Ion-implanted shallow junctions have been investigated using BE₂ (molecular ions) by the anodic oxidation method coupled with a four-point probe technique. BF₂ ions were implanted through screen oxide at doses of 3–5 × 10¹⁵ ions/cm² and energies of 25 and 45 keV which is equivalent to 5.6 keV and 10 keV of boron ions. The effect of energy, dose and annealing temperature on shallow junctions is presented in this paper. The shallow junctions in the range of 0.19 μm to 0.47 μm were fabricated.

The effect of fluorine on sheet resistivity of boron implanted silicon at various doses, treated with two-step and three-step annealing, is also presented for comparison in the paper.