Methods for increasing the efficiency of nonlinear optical interactions in nanostructured semiconductors

Methods for increasing the efficiency of the optical second-and third-harmonic generation in gallium phosphide and silicon nanostructures formed by electrochemical etching of crystalline semiconductors are discussed. The efficiency of nonlinear optical interactions can be increased by using phase matching in anisotropic nanostructured semiconductors that exhibit form birefringence or by increasing the local field, as in scattering in macroporous semiconductors. The efficiencies of third-harmonic generation in porous silicon and of second-harmonic generation in porous gallium phosphide are found to increase by more than an order of magnitude.     

Efficient second-harmonic generation by scattering from porous gallium phosphide

We experimentally study second-harmonic generation by femtosecond Cr: forsterite-laser radiation scattered on the surface of porous gallium phosphide with characteristic pore sizes and distances between the pores comparable with the second-harmonic wavelength. The intensity of the second-harmonic signal from samples with initial crystallographic surface orientations (110) and (111) is more than an order of magnitude higher than the intensity of the second harmonic generated in reflection from single-crystal gallium phosphide. The efficiency of second-harmonic generation by macroporous gallium phosphide substantially increases as the pump wave-length becomes shorter. The influence of light localization and scattering effects on the enhancement of second-harmonic generation and polarization properties of the second-harmonic is discussed.     

Far-infrared study of impurity local modes in gallium-doped PbTe

We present far-infrared reflection spectra and results of galvanomagnetic measurements of PbTe single crystals doped with gallium between 10 and 300 K. The analysis of the far-infrared reflection spectra was made by a fitting procedure based on the model of coupled oscillators. Together with the strong plasmon–phonon coupling we obtain three local modes of gallium at about 122, 166 and 192 cm⁻¹. The position of these modes depends of impurity center charge, and their intensity depends of temperature and of gallium concentration. Persistent photoconductivity effect was registered in the sample with 0.4 at.% Ga by galvanomagnetic and far-infrared measurements.     

Spatial extent of random laser modes

We have experimentally studied the distribution of the spatial extent of modes and the crossover from essentially single-mode to distinctly multimode behavior inside a porous gallium phosphide random laser. This system serves as a paragon for random lasers due to its exemplary high index contrast. In the multimode regime, we observed mode competition. We have measured the distribution of spectral mode spacings in our emission spectra and found level repulsion that is well described by the Gaussian orthogonal ensemble of random-matrix theory.     

Disorder-correlated enhancement of second-harmonic generation in strongly photonic porous gallium phosphide

We report an order of magnitude enhancement of second-harmonic generation (SHG) from porous gallium phosphide relative to SHG in crystalline gallium phosphide. Optical heterodyning measurements of photon free-path length reveal a correlation between SHG enhancement and disorder of the porous material.     

Study of lattice vibrational modes in CuGaS2 by using fourier transform spectroscopy

The lattice dynamics of a single crystal of CuGaS₂, grown by iodine transport technique, have been studied by using far IR absorption spectroscopy. All the absorption maxima caused by the phonon excitation are compared with the lattice vibrational modes obtained by Raman spectroscopy and by IR reflection techniques. An absorption maximum located at 175 cm^?1 cannot be explained with the help of phonon excitation; however this peak can be attributed to the defect frequency originating from the replacement of gallium atom by sulphur in the v₁₇ mode of vibration. The frequency of this defect-induced vibrational mode is calculated by taking a modified molecular model approach, and is found to be 166.9 cm^?1, which is in reasonably good agreement with the experimentally observed value of 175 cm^?1.     

Electronic states and vibration spectra of CdTe/ZnTe quantum dot superlattices

Electronic and vibrational states in CdTe/ZnTe quantum dot superlattices are studied using optical spectroscopy techniques (photoluminescence in a wide temperature range, IR reflection, and Raman scattering). The effect of the ZnTe barrier layer thickness on the luminescence spectra of the structures is discussed. The luminescence from electronically coupled islands is assumed to be due to spatially indirect excitons because of the specific features of the CdTe/ZnTe heterostructure band structure. A combination of quantum-dot vibrational modes, which has not been observed earlier, is detected in the Raman spectra. Analysis of the lattice IR reflection spectra shows that, in the case of large barrier thicknesses between the quantum-dot planes, elastic stresses are concentrated in the Zn_1?xCd_xTe layers, whereas in structures with lower barrier thicknesses the elastic-strain distribution exhibits a more complicated pattern.     

Dynamically phase-matched terahertz generation

We present the generation of intense terahertz pulses by optical rectification of 780 nm pulses in a large area gallium phosphide crystal. The velocity mismatch between optical and terahertz pulses thereby limits the bandwidth of the terahertz pulses. We show that this limitation can be overcome by a dynamic modification of the refractive index of the gallium phosphide crystal through generation of hot phonons. This is confirmed by excellent agreement between experimental results and model calculations.     

Electrical and optical properties of gallium phosphide films

The electrical and optical properties of gallium phosphide films, prepared by the explosive evaporation and three-temperature methods, are studied. It is shown that film properties are strongly dependent on method of preparation and substrate temperature. Gallium phosphide films prepared by explosive evaporation having perfect structure possess the best electrical and optical properties.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 6, pp. 54–58, June, 1971.     

Raman scattering from surface optical phonon mode in gallium phosphide nanomaterials

The Raman scattering from gallium phosphide (GaP) nanoparticles (~53 nm) and nanosolids has been investigated. By means of Lorentzian fitting of the Raman scattering spectra, a surface optical phonon (SO) peak located between the transverse optical (TO) phonon and longitudinal optical (LO) phonon frequencies became observable. It has been proved by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) that a core-shell heterostructure is characteristic of the structure of GaP nanoparticles. According to electromagnetic theory, the SO frequency of the piezoelectric/semiconductor heterostructural nanomaterials was calculated.     

Spectroscopy of phonon and vibronic states of YbAl3(BO3)4 single crystal

The polarized Raman and reflection spectra of a single crystal YbAl₃(BO₃)₄ at room temperature were studied. Raman active vibrational modes A ₁, E _TO, and E _LO are identified. In the Raman spectrum, we detected an intense line at a frequency of 1018 cm⁻¹, which refers to internal vibrations of the BO₃ group and is known to be promising for use in amplifiers based on stimulated Raman scattering. From the simulation of reflection spectra by the method of dispersion analysis the frequencies of A ₂ vibrational modes were determined. Intense bands observed in the low-temperature transmission spectra in the range of f-f transitions in the Yb³⁺ ion are attributed to electron-phonon transitions. The Raman lines are compared with electron-phonon lines in the transmission spectrum.     

Infrared reflectivity and Raman scattering of lithium oxide single crystals

Infrared reflection and Raman spectra of single crystals of lithium oxide have been measured at room temperature. The reflection spectra have been analyzed by means of a fit with a classical dispersion formula. The result gives the frequencies of the fundamental transverse and longitudinal optical modes as 425 and 737 cm^?1, respectively. The frequency of the Raman active fundamental mode is also established at 523 cm^?1. From these frequencies an effective charge of lithium ion and effective force constants are obtained on the basis of lattice dynamical models.     

Das Schwingungsspektrum des monoklinen CaSO4·2H2O

The relations between the imaginary part of the optical dielectric tensor in molecular crystals and transitions active in absorption, derived in a preceding paper [1], are experimentally verified by investigating the vibrational spectrum of monoclinic crystals of gypsum. Reflection spectra of precisely oriented crystal sections were recorded using polarized light between 10 000 cm^?1 and 300 cm^?1 at room temperature and at about 15°K. The eigenfrequencies of polar vibrations and the direction and magnitude of transition moments in the crystal are derived from these spectra. These results definitely support the assumption, that the bands observed between 500 cm^?1 and 300 cm^?1 are caused by hindered rotations of the water molecules. The temperature dependence of the spectra of these molecules in the region of the two stretching modes indicates mixing of these states as a result of the crystalline field. Besides this, mechanisms are discussed, which lead to the decay of excited vibrational modes and thus give rise to the observed temperature dependence of the bandwidths.     

低温相偏硼酸钡晶体的红外反射光谱

本文报道了新型非线性材料——低温相偏硼酸钡晶体在室温下两种不同偏振成份的红外反射光谱(100—4000cm^-1波段),得到了200cm^-1以上频率范围内振动模的横模和纵模频率。利用“层状分子性结构”模型,参照喇曼光谱实验结果,对该晶体内振动模的归属给出了分析指认。 关键词：     

Simulation of kinetics of water temperature-programmed desorption from n-GaAs(100) and n-GaP(100) semiconductor surfaces

The energy spectra of adsorption centers on the n-GaAs(100) and n-GaP(100) surfaces are studied using temperature-programmed desorption of water. The desorption spectra are analyzed in terms of the model of discrete adsorption centers, which assumes the presence of a loosely bound precursor state. The values of frequency factors and activation energies of desorption are in good agreement with the frequency of electronic transitions and energies of surface electronic states in gallium arsenide and gallium phosphide. It is concluded that the water desorption kinetics is limited by slow electronic processes on the surface of the semiconductors.     

Optical Analysis of Nanocrystalline ZnO Films Coated on Porous Silicon by Radio Frequency (RF) Magnetron Sputtering

Zinc oxide thin films have been deposited onto porous silicon (PSi) substrates at high growth rates by radio frequency (RF) sputtering using a ZnO target. The advantages of the porous Si template are economical and it provides a rigid structural material. Porous silicon is applied as an intermediate layer between silicon and ZnO films and it contributed a large area composed of an array of voids. The nanoporous silicon samples were adapted by photo electrochemical (PEC) etching technique on n-type silicon wafer with (111) and (100) orientation. Micro-Raman and photoluminescence (PL) spectroscopy are powerful and non-destructive optical tools to study vibrational and optical properties of ZnO nanostructures. Both the Raman and PL measurements were also operated at room temperature. Micro-Raman results showed that the A₁(LO) of hexagonal ZnO/Si(111) and ZnO/Si(100) have been observed at around 522 and 530 cm^–1, re- spectively. PL spectra peaks are distinctly apparent at 366 and 368 cm^–1 for ZnO film grown on porous Si(111) and Si(100) substrates, respectively. The peak luminescence energy in nanocrystalline ZnO on porous silicon is blue-shifted with regard to that in bulk ZnO (381 nm). The Raman and PL spectra pointed to oxygen vacancies or Zn interstitials which are responsible for the green emission in the nanocrystalline ZnO.     

Characterization of porous polar semiconductors by their optical spectra in the region of phonon and plasmon-phonon excitations

Optical properties of porous A ³ B ⁵ semiconductors (GaAs, InP, and GaP) in the far-infrared region, in particular, the specular reflection and attenuated total reflection, including the excitation regime of surface polaritons, are considered. Considering a porous material as a composite, we performed calculations in the context of the effective medium model using two modifications of it, Maxwell-Garnett and Bruggeman, which correspond to two different topologies of the composite material—matrix and statistical. The effect of porosity of the material and of such parameters as doping, anisotropy, and penetration depth of an electromagnetic wave to a porous material on optical spectra is analyzed. In addition, some experimental data are presented and the adequacy of the performed numerical simulation is demonstrated.     

Stress, strain, and NMR

Experimental and ab initio results that demonstrate the effect of stress on the nuclear magnetic resonance spectra of materials are shown. The design of a cell that generates uniaxial compressive stress is presented, and results on gallium phosphide and lead nitrate single crystals that illustrate the observable results of the stress are shown. Tensors that relate stress and strain to changes in the chemical shielding tensors and the electric field gradient tensors are defined formally. The elements of these tensors are then computed by a density functional theory approach that makes use of planewaves and pseudopotentials. The experimental results are interpreted with the aid of the calculations. Extensions to spinning samples and to the interpretation of optical phenomena in materials are discussed.     

Raman scattering studies on manganese ion-implanted GaN

This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm^-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm^-1 and 660 cm^-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm^-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 °C and 1050 °C on Mn implanted GaN epilayers. The behaviour of peak-shape change and full width at half maximum (FWHM) of the A₁(LO) (733 cm^-1) and E^H₂ (566 cm^-1) Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.     

Compact and cost-effective scheme for THz generation via optical rectification in GaP and GaAs using novel fs laser oscillators

We demonstrate a compact and cost-effective setup to generate broadband THz radiation. As pump source we use a diode-pumped solid-state femtosecond oscillator or a femtosecond fiber laser system, partially in combination with an optical parametric oscillator. For the THz generation we utilize optical rectification in gallium phosphide (GaP) and gallium arsenide (GaAs). The THz power is on the order of 1 μW and we demonstrate imaging and spectral measurements with this setup.