LEED,AES and work function measurements on clean and cesium covered polar faces of GaP

After argon bombardment and annealing both the (111) and (1̄1̄1̄) faces of GaP show a (1 × 1) LEED pattern. The stabilization of the polar termination is probably obtained by charging of surface states. Measurements of the work function, the Auger spectrum and the LEED pattern during cesium deposition at room temperature suggest disordered cesium adsorption limited to a monolayer.     

Composition,structure, surface states,and O2 sticking coefficient for differently prepared GaAs(1̄1̄1̄)As surfaces

The polar GaAs(1̄1̄1̄)As surface can be prepared in three stable and ordered states: two by molecular beam epitaxy (MBE), namely the As-stabilized and the Ga-stabilized states and one simply by ion bombardment and annealing at 770 K. The respective LEED structures are $\text{(2 × 2), (}\text{19}\text{×}\text{19}\text{)}\text{R}\text{23.4°}$, and (1 × 1) with a diffuse faint (3 × 3) superstructure. Auger measurements and the comparison with the stoichiometric cleaved (110) surface show that there are different As concentrations in the first atomic layer associated with each of these three surfaces. Whereas about 10 to 15% of the first As layer appears to be missing on the (2 × 2) surface, about 50% is missing on the $\text{19}$ surface. On the (1 × 1) surface the first As layer is removed completely. The intensity of emission from the surface sensitive states between 1 and 4 eV below the valence band edge, as seen by angular resolved UPS, roughly corresponds to the amount of As at the surface thus confirming their interpretation as As-derived surface states. The inital sticking coefficent for oxygen depends strongly on the surface structure: ～10^?8 for the (2 × 2), ～10^?7 for the $\text{19}$, and ～10^?4 for the (1 × 1) surface. The sticking coefficient does not depend on the surface concentration of As but rather on the degree of saturation of dangling bonds on Ga atoms.     

A comparative analysis of electron spectroscopy and first-principles studies on Cu(Pd) adsorption on MgO

Ultrathin MgO films were grown on a W(1 1 0) substrate while metastable impact electron (MIES) and photoelectron (UPS) spectra were measured in situ; apart from the valence band emission, no additional spectral features were detected. The oxide surface was exposed to metal atoms (Cu, Pd) at RT. A comparison with the DOS extracted from first-principles DFT calculations shows that the metal-induced intensity developing above the top of the O 2p valence band in the UP spectra under Cu(Pd) exposure is caused by Cu 3d (Pd 4d) emission. The emission seen in the MIES spectra is attributed to the ionization of Cu 3d and 4s states of adsorbed neutral Cu atoms in an Auger process, Auger neutralization, involving two electrons from the surface, at least one of them from the metal adsorbate. The shape of the MIES spectra suggests metallic island growth even at the lowest studied exposures, which is supported by the first-principles calculations.     

Stoichiometric and oxygen deficient MoO3(010) surfaces

The (010) surface of single crystal MoO₃ has been prepared and examined using LEED, XPS, UPS, and ELS. Three methods yield the stoichiometric surface: scraping in UHV and annealing, ion etching followed by reoxidation (770 K, 10² Pa O₂), or oxygen treatment to remove carbon contamination. LEED shows the surface periodicity is the same as that of the bulk (010). The MoO₃ valence band is 7 eV wide with density of states maxima at 1.5, 3.6, and 5.6 eV below the top of the valence band. Heating MoO₃ in vacuum reduces the surface region. XPS indicates the O/Mo atomic ratio decreases to 2.85 ± 0.12 on heating to 600 K. Ar ion bombardment disorders the surface and reduces the surface O/Mo atomic ratio to 1.6. Annealing of reduced surfaces at > 770 K incompletely reoxidizes them by diffusion of oxygen from the bulk. UPS of reduced and annealed MoO₃ exhibits two new emission features in the bandgap at 0.9 and 2.0 eV above the top of the valence band. These features originate from Mo derived states of a defect involving two or more Mo atoms, such as crystallographic shear planes. Because of the insulating nature of MoO₃, surface charging and electron beam induced damage were substantial hindrances to electron spectroscopic examination.     

GaAs(100)表面(4×1)结构的UPS研究

用偏振的紫外光源测量了GaAs(100)表面(4×1)结构的UPS谱,从清洁表面和吸附氧以后UPS的差谱中辨别出了在价带顶以下2eV以内的表面态峰,根据用偏振光所得到的谱和跃迁选择定则的讨论,认为表面态包含了三个峰,价带顶以下0.5eV处有一个对应于表面Ga原子桥键态的峰,在0.7eV处有对应于表面As原子桥键态的峰,而在1.3eV处的峰则同表面原子的悬键态相联系。 关键词：     

PES study of amorphous alloy Fe40Ni40P20

The electron structure of amorphous Fe₄₀NI₄₀P₂₀ has been investigated before and after annealing by XPS and UPS (HeI, HeII). It is shown that the spectra of UPS were modified obviously by various degree of annealing. Composition and chemical states of the components on the surface of the sample are also presented and the effect of structural ordering on the density of states (DOS) of the valence band is discussed.     

Low energy electron diffraction and electron spectroscopy studies of the clean (110) and (100) titanium dioxide (rutile) crystal surfaces

Low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), electron energy loss (ELS) and ultraviolet photoemission spectroscopies (UPS) were used to study the structures, compositions and electron state distributions of clean single crystal faces of titanium dioxide (rutile). LEED showed that both the (110) and (100) surfaces are stable, the latter giving rise to three distinct surface structures, viz. (1 × 3), (1 × 5) and (1 × 7) that were obtained by annealing an argon ion-bombarded (100) surface at ~600,800 and 1200° C respectively. AES showed the decrease of the $\text{O(510 eV)}\text{Ti(380 eV)}$ peak ratio from ~1.7 to ~1.3 in going from the (1 × 3) to the (1 × 7) surface structure. Electron energy loss spectra obtained from the (110) and (100)?(1 × 3) surfaces are similar, with surface-sensitive transitions at 8.2, 5.2 and 2.4 eV. The energy loss spectrum from an argon or oxygen ion bombarded surface is dominated by the transition at 1.6 eV. UPS indicated that the initial state for this ELS transition is peaked at ?0.6 eV (referred to the Fermi level E_F in the photoemission spectrum, and that the 2.4 eV surface-sensitive ELS transition probably arises from the band of occupied states between the bulk valence band maximum to the Fermi level. High energy electron beams (1.6 keV 20 μA) used in AES were found to disorder clean and initially well-ordered TiO₂ surfaces. Argon ion bombardment of clean ordered TiO₂ (110) and (100)?(1 × 3) surfaces caused the work function and surface band bending to decrease by almost 1 eV and such decrease is explained as due to the loss of oxygen from the surface.     

氧在GaP(111)上的初级吸附阶段

采用多种表面分析手段,系统地研究了氧在GaP(111)上的吸附,发现氧的初级吸附在1×10⁴L时就已饱和,获得了有关这一阶段表面电子结构的变化、表面能带弯曲、化学吸附反应等方面的信息,发现这一吸附阶段与表面缺陷有关,适当地加热处理则可能将缺陷和氧一同去除,因此这有可能成为一种有效的、去除缺陷的表面工程手段。 关键词：     

射频磁控溅射法制备ZnO薄膜的发光特性

利用射频磁控溅射法在硅衬底上制备出具有（002）择优取向的氧化锌薄膜，用波长为300nm的光激发，观察到在446nm处有一强的光致发光峰，它来自于氧空位浅施主能级上的电子到价带上的跃迁。并讨论了发光峰与氧压的关系以及退火对它的影响，且给出了解释。     

X-ray photoelectron spectroscopy study of sputter-annealed Ni2.1Mn0.9Ga surface

The modifications in surface composition of Ni_2.1Mn_0.9Ga ferromagnetic shape memory alloy have been investigated using X-ray photoelectron spectroscopy (XPS) under various sputtering and annealing conditions. XPS core-level spectra show that sputtering makes the surface Ni rich. However, by annealing, the Mn content at the surface increases and at about 390 °C the bulk composition is restored. The valence band spectra show evidence of Ni related extra states for the sputtered surface, which decrease with annealing. This behavior is in agreement with the change in surface composition derived from the core-level spectra.     

Electronic surface properties of uhv-cleaved III–V compounds

Combined CPD and photoemission measurements were performed on uhv-cleaved surfaces of the III–V compounds InAs, GaSb, GaAs and GaP with moderate p-type and n-type dopings. Except for n-type GaP these materials show practically no band bending. N-type GaP exhibits surface Fermi level stabilization at 0.55 eV below the conduction band edge. This is ascribed to an intrinsic empty surface state band in the forbidden zone. On the basis of our experiments together with available data from literature we propose an empirical model for the (110) plane of III–V compounds containing In or Ga as metal and Sb, As or P as non-metal atoms from which the lower edge of the empty surface state band can be predicted. The model indicates that for any of these compounds except for GaP no empty surface state band exist in the band gap on the (110) surface.     

Na and K on Al(100) studied by low-energy electron diffraction and high-resolution core-level spectroscopy

The temperature effects on sub-monolayers of V deposited at the TiO₂(001) surface have been studied by ultraviolet and X-ray photoelectron spectroscopies, UPS and XPS, from 300 up to 623 K.

V coverages, Θ_v, between 0.2 and 0.7 monolayers (ML) were deposited by an e-beam evaporator at 300 K. The V 2p_3/2 core line region exhibits two well-defined components whose relative intensity depends on Θ_v. These two components, assigned to different oxidation states of V, are correlated with two features, with a dominant V 3d character, detected within the TiO₂(001) band gap of the UPS valence band spectra.

UPS and XPS measurements performed after in-situ thermal treatments show unambiguous and reproducible changes of these spectral components. After annealing at 623 K only the higher binding energy component is present in the V 2p_3/2 spectra; the Ti 2_p core lines recover the typical symmetry of the clean and stoichiometric TiO₂(001) surface and the higher binding energy feature only is detected in the TiO₂ band gap. These data suggest that, within the volume probed by XPS and UPS, Ti ions have a mainly d⁰ configuration, while V has a single and stable open-shell configuration, as revealed by the significant intensity detected within the TiO₂ band gap. These annealing-induced changes are due, as suggested by the O 1s/Ti 2p core line intensity trend, to an oxygen diffusion from the TiO₂ bulk to the surface. Finally, a detailed analysis of the data indicates that different V/TiO₂(001) interfaces exhibit different behaviours after annealing treatments, depending on Θ_v. For Θ_v = 0.7 ML, V interdiffuses into the TiO₂ sub-surface layers, whereas for Θ_v = 0.2 ML it remains at the surface. This finding is consistent with a rearrangement of V atoms. which under annealing occupy first the energetically most favorable surface sites (Θ_v = 0.2 ML) before interdiffusing into the TiO₂ lattice (Θ_v = 0.7 ML).     

Valence band studies of clean and oxygen exposed GaAs(100) surfaces

We found, by correlating band bending, ultraviolet photoemission spectroscopy, and partial yield spectroscopy measurements, that Fermi level pinning at midgap of n-type GaAs(110) is caused by extrinsic states. The exact nature of these states is not yet clear, but the surfaces with Fermi level pinning were strained as evidence by a smeared valence band emission. This smearing was removed by as little as one oxygen per 10⁴ to 10⁵ surface atoms. This implies that the oxygen has very long range effects in causing spontanesous but small rearrangement of the surface lattice and removing surface strains. When about 5% of a monolayer of oxygen is adsorbed, a major change in the electronic structure takes place. Again, the oxygen coverage is very small, which suggests long range effects now leading to a fairly large rearrrangement of the surface lattice. Finally, from comparing the oxygen induced emission for exposures greater than 10⁷ L O₂, with the spectra from gas photoemission measurements on molecular oxygen, we suggest that the oxygen is chemisorbed as a molecule on the (110) surface of GaAs.     

Synthesis and characterization of binary and ternary III–V quantum dots

Quantum dots of InP, GaP, GaInP₂, and GaAs with diameters ranging from 20–80 Å can be synthesized as well-crystallized nanoparticles with bulk zinc blende structure. The synthesis is achieved by heating appropriate organometallic precursors with stabilizers in high boiling solvents for several days to produce QDs, which can then be dissolved in nonpolar organic solvents to form transparent colloidal QD dispersions. The high sample quality of the InP and Gap QDs results in excitonic features in the absorption spectra; excitonic features could not be observed for GaAs or GaInP₂ QDs. The GaP and GaInP₂ QD colloids exhibit very intense (quantum yields of 15–25%) visible photoluminescence at room temperature. The photoluminescence for InP QDs preparations show two emission bands: one band is in the visible at the band edge of the QD, and a second band appears above 800 nm. The near-IR PL is attributed to deep traps, presumably phosphorus vacancies on the QD surface. This band can be removed after controlled addition of etchant; subsequently, very intense band-edge emission (quantum yield 30%), which is tunable with particle size, is obtained. The QDs were characterized by TEM, SAXS, AFM, powder X-ray diffraction, steady-state optical absorption and photoluminescence spectroscopy, ps to ns transient photoluminescence spectroscopy, and fs to ps pump-probe absorption (i.e., hole-burning) spectroscopy.     

Role of surface antisite defects in the formation of heterojunctions

Fermi level pinning positions were measured for Si overlayers on cleaved, n-type GaAs and GaP substrates. The observed positions are 0.73 ± 0.1 eV and 0.98 ± 0.1 eV above the top of the substrate valence band. Theoretical calculations of the surface antisite acceptor levels predict the same chemical trend on going from GaAs to GaP. This agreement and other arguments suggest an important role for surface defects in the formation of semiconductor heterojunctions.     

On the initial phase of native oxide formation on Si〈1 1 1〉

An Auger Electron Spectroscopy study of the initial phase of native oxide formation on Si〈1 1 1〉 is reported. Observed Auger peaks for low levels of oxygen exposure are explained in terms of a model of monoatomic and peroxyl surface bonding and the position of associated bands deduced with respect to the SiO₂ valence band edge. For high levels of oxygen exposure, only monatomic bonding is found whilst the full SiO₂ valence band structure appears.     

Deposition and properties of B-N codoped p-type ZnO thin films by RF magnetron sputtering

B-N codoped p-type ZnO thin films have been realized by radio frequency (rf) magnetron sputtering using a mixture of argon and oxygen as sputtering gas. Types of conduction and electrical properties in codoped ZnO films were found to be dependent on oxygen partial pressure ratios in the sputtering gas mixture. When oxygen partial pressure ratio was 70%, the codoped ZnO film showed p-type conduction and had the best electrical properties. Additionally, the p-ZnO/n-Si heterojunction showed a clear p-n diode characteristic. XRD results indicate that the B-N codoped ZnO film prepared in 70% oxygen partial pressure ratio has high crystal quality with (0 0 2) preferential orientation. Meanwhile, the B-N codoped ZnO film has high optical quality and displays the stronger near band edge (NBE) emission in the temperature-dependent photoluminescence spectrum, the acceptor energy level was estimated to be located at 125 meV above the valence band.     

Obtaining density of states information from self-deconvolution of Auger band-type spectra

A systematic revision of the techniques to isolate Auger peaks in experimental spectra obtained with LEED/AES analyzers has been carried out: Background subtraction, deconvolution with the elastic peak and inversion of self-convolution. New techniques have been devised and applied to the Auger spectra of graphite, aluminum, magnesium, magnesium oxide and silicon. Self-deconvolution of these spectra leads to a transition density function that has been compared with the density of states of the valence band near the surface, as given by other competitive techniques (XPS, UPS, XES) and by theory. This comparison shows that in those meterials, Auger electron spectroscopy (AES) is a sensitive probe of the electron environment of surface atoms.     

A trend in the energy distributions of Ga dangling-orbital surface states on GaP,GaAs and GaSb (110)

Relaxed (110) surfaces of GaP, GaAs, and GaSb are studied by cluster calculations. Strongly localized surface states near the band gap are presented. It is shown that Ga dangling-orbital surface states can occur within the band gap as a result of a strong decrease in the anti-bonding character of surface Ga orbitals. A trend in the bond length on going from GaSb to GaP explains experimental data. Surface states associated with the group-V atoms are also described.     

SiO2 and Al2O3 valence band density of states from self-deconvolution of L23VV Auger spectrum

The self-deconvolution of L₂₃VV Auger spectra of SiO₂ and Al₂O₃ has been carried out. The transition density functions obtained are compared with the local density of states (LDOS) of the valence band near the surface, as given by other techniques (XPS, UPS, XES) and also by theory. A fair agreement in the number and peak positions of valence band is produced. These compounds with MgO constitute an oxide series of increasing ionicity and the effects of initial hole localization in the transition density function are discussed.