Luminescence properties of Cu‐ion‐implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 × 10¹⁴ ions/cm²) were implanted at room temperature in nondoped and Mg‐doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 nm in CVD‐ZnO and at 450 nm in Mg‐doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low‐concentration region of CVD‐ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 × 10¹⁹ ions/cm³ in CVD‐ZnO and 5.6 × 10¹⁸ ions/cm³ in MZO thin films. Copyright © 2005 John Wiley & Sons, Ltd.     

Plasma chemical vapor deposition of TiN

Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater than 2000 kg/mm² (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness, and microstructures has been studied.     

Synthetic and Structural Studies of Ethyl Zinc β-Amidoenoates and β-Ketoiminates

A set of heteroleptic ethyl zinc β-amidoenoates (1, 2) and β-ketoiminates (3) of the form [LZnEt]₂ with varying steric bulk have been synthesised via the reaction of diethylzinc with β-aminoenoate ligands HL¹ and HL² and β-ketoimine HL³. These complexes have been characterised via ¹H and ¹³C NMR, mass spectrometry and single-crystal X-ray diffraction, which unambiguously determined all three structures as dimeric species in the solid state. We observe the unusual dimerisation of 1 and 2 through coordination of the central zinc atom to the methine carbon of the second monomer, which gives these complexes high reactivity. The thermal properties of complex 3 are explored via thermal gravimetric analysis (TGA), to investigate their potential as single-source precursors to zinc oxide, which shows that 3 has a significantly lower decomposition temperature as compared to its bis-ligated counterpart [Zn(L³)₂], which gives 3 promise as a single-source precursor to zinc oxide.     

硅纳米线的化学气相沉积法合成

硅纳米线是近十几年来在纳米科学与技术领域快速发展的一种重要材料．通过精细的结构设计与材料合成,硅纳米线在生物传感、锂离子电池、太阳能电池和光电化学等领域展示出良好的应用前景．化学气相沉积（CVD）法是一大类重要的自下而上合成硅纳米线方法．本文简介了CVD法合成硅纳米线的主要进展,包括具有单一结构和复合结构的硅纳米线的合成．其中,单一结构的硅纳米包括本征（无掺杂）、掺杂和超长的硅纳米线;复合结构的硅纳米线包括轴向异质结、径向异质结、转折结构和树枝状结构的硅纳米线．     

Modeling of the elementary gas-phase reaction during chemical vapor deposition of silicon carbide from CH3SiCl3/H2

We established a gas-phase, elementary reaction model for chemical vapor deposition of silicon carbide from methyltrichlorosilane (MTS) and H₂, based on the model developed at Iowa State University (ISU). The ISU model did not reproduce our experimental results, decomposition behavior of MTS in the gas phase in an environment with H₂. Therefore, we made several modifications to the ISU model. Of the reactions included in existing models, 236 were lacking in the ISU model, and thus were added to the model. In addition, we modified the rate constants of the unimolecular reactions and the recombination reactions, which were treated as a high-pressure limit in the ISU model, into pressure-dependent rate expressions based on the previous reports (to yield the ISU+ model), for example, H₂(+M) → H + H(+M), but decomposition behavior remained poorly reproducible. To incorporate the pressure dependencies of unimolecular decomposition rate constants, and to increase the accuracies of these constants, we recalculated the rate constants of five unimolecular decomposition reactions of MTS using the Rice-Ramsperger-Kassel-Marcus method at the CBS-QB3 level. These chemistries were added to the ISU+ model to yield the UT2014 model. The UT2014 model reproduced overall MTS decomposition. From the results of our model, we confirmed that MTS mainly decomposes into CH₃ and SiCl₃ at the temperature around 1000°C as reported in the several studies.     

Deposition of copper‐doped iron sulfide (CuxFe1−xS) thin films using aerosol‐assisted chemical vapor deposition technique

Copper‐doped iron sulfide (Cu_xFe_1?xS, x = 0.010–0.180) thin films were deposited using a single‐source precursor, Cu(LH)₂Cl₂ (LH = monoacetylferrocene thiosemicarbazone), by aerosol‐assisted chemical vapor deposition technique. The Cu‐doped FeS thin films were deposited at different substrate temperatures, i.e. 250, 300, 350, 400 and 450 °C. The deposited thin films were characterized by X‐ray diffraction (XRD) patterns, Raman spectra, scanning electron microscopy, energy dispersive X‐ray analysis (EDX) and atomic force microscopy. XRD studies of Cu‐doped FeS thin films at all the temperatures revealed formation of single‐phase FeS structure. With increasing substrate temperature from 250 to 450 °C, there was change in morphology from wafer‐like to cylindrical plate‐like. EDX analysis showed that the doping percentage of copper increased as the substrate temperature increased from 250 to 450 °C. Raman data supports the doping of copper in FeS films. Copyright © 2010 John Wiley & Sons, Ltd.     

Atmospheric pressure chemical vapor deposition: an alternative route to large-scale MoS2 and WS2 inorganic fullerene-like nanostructures and nanoflowers

Large-scale MoS2 and WS2 inorganic fullerene-like (IF) nanostructures (onionlike nanoparticles, nanotubes) and elegant three-dimensional nanoflowers (NF) have been selectively prepared through an atmospheric pressure chemical vapor deposition (APCVD) process with the reaction of chlorides and sulfur. The morphologies were controlled by adjusting the deposition position, the deposition temperature, and the flux of the carrier gas. All of the nanostructures have been characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). A reaction mechanism is proposed based on the experimental results. The surface area of MoS2 IF nanoparticles and the field-emission effect of as-prepared WS2 nanoflowers is reported.     

Effects of FeCl3 as oxidizing agent on the conduction mechanisms in polypyrrole (PPy)/pc–ZnO hybrid heterojunctions grown by oxidative chemical vapor deposition

P‐type polypyrrole (PPy) films are deposited on glass and on n‐type polycrystalline ZnO (pc–ZnO) substrates by oxidative chemical vapor deposition under three different amounts of FeCl₃ used as oxidizing agents to form hybrid heterojunctions. Their microstructure, morphology, and electrical characteristics are studied. Particularly, current–voltage characteristics of the PPy/pc–ZnO heterojunctions are analyzed by defining an electrical equivalent circuit. The extracted parameters, together with the estimated heterojunction barrier height and the HOMO energy level of the PPy, indicate that a thermionic emission of holes at the heterojunction determines the saturation current of the diode at low voltage. For larger FeCl₃ amounts, the diode ideality factor increases indicating an increment of recombination by tunneling of charge carriers occurring at the heterojunction. This is attributed to a narrowing of the space charge region due to an increment of the number of charge carriers with a growing amount of FeCl₃. At high voltages, the PPy thickness influences the ohmic and space–charge limited current mechanisms at the bulk region. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1537–1544     

Magnetic property and structural study of nickel supported on reduced graphene oxide prepared by chemical vapor deposition

Nickel supported on reduced graphene oxide was synthesized by chemical vapor deposition technique. The crystal structure and magnetic properties of the prepared sample were studied by means of Raman spectrometry, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), inductively coupled plasma optical emission spectrometry (ICP-OES), and vibrating sample magnetometry (VSM). The result of Raman spectroscopy revealed the structure of few-layer graphene as the support for Ni nanoparticles. XP spectrum confirmed the presence of metallic Ni on the a few-layer graphene surface. TE micrograph showed that the nickel nanoparticles were sphere shaped and the mean particle size is about 20 nm deposited on the reduced graphene oxide. The magnetic study showed the ferromagnetic behavior of 3.2 wt% nickel over reduced graphene oxide at room temperature.     

Opening the Pandora's jar of molecule‐to‐material conversion in chemical vapor deposition: Insights from theory

First‐principles modeling can be a powerful tool for the understanding and optimization of bottom‐up processes for nanomaterials fabrication, such as chemical vapor deposition (CVD), a key technology for the development of advanced systems and devices. Molecule‐to‐material conversion by CVD involves complex chemical phenomena, which are often obscure and still largely unexplored. A proper modeling would require high level of accuracy, large sized models and should include both temperature effects and statistical sampling of reactive events. By presenting a few selected examples, this perspective surveys such problems and discusses currently available approaches for their solution. Possible strategies for future advances in the field are also highlighted. © 2013 Wiley Periodicals, Inc.     

Chemical vapor deposition of metal borides: 6. The formation of neodymium boride thin film materials from polyhedral boron clusters and metal halides by chemical vapor deposition

The chemical vapor deposition (CVD) of crystalline thin films of neodymium hexaboride (NdB₆) was achieved using either nido ‐pentaborane(9) or nido ‐decaborane(14) with neodymium(III) chloride on different substrates. The highly crystalline NdB₆ films were formed at relatively moderate temperatures (835 °C, ca. 1 µm/h) and were characterized by scanning electron microscopy, X‐ray emission spectroscopy, X‐ray diffraction and glow discharge mass spectrometry. The NdB₆ polycrystalline films were found to be pure and uniform in composition in the bulk material. Depositions using CoCl₂, NdCl₃ and B₅H₉ as the CVD precursors resulted in the formation of a mixture of NdB₆ and CoB phases, rather than the ternary phase. Copyright © 2008 John Wiley & Sons, Ltd.     

Effects of temperature on the properties of TiO2 photocatalysts prepared by the chemical vapor deposition (CVD) method

In this study, a TiO₂ film was prepared in an annular reactor by the chemical vapor deposition (CVD) method. Results indicated that anatase crystals were formed, except for at a deposition temperature of 200°C without calcination. At a calcination temperature of 850°C, anatase crystal was the major species formed with a small amount of rutile crystals. After conducting a photocatalytic reaction of toluene, the best activity was found with a preparation temperature of 350°C for the deposition, and 550°C for calcination.     

Organometallic chemical vapor deposition using allyl precursors

Homoleptic allyl derivatives of many Main-Group and transition metals, M(C₃H₅)_n, are readily available through one-pot syntheses using metal halides and allyl Grignard reagents or by alkylation of alkali-metal salts. The relatively low molecular weight of a C₃H₅ ligand contributes to high vapor pressures whilst the stability of the allyl radical is predicted to reduce decomposition temperatures. These compounds represent a class of volatile precursors for organometallic chemical vapor deposition (OMCVD) of thin films. Film growth studies using iridium, molybdenum, palladium, platinum, rhodium, selenium, tellurium and tungsten compounds are reviewed and the relationships between pyrolysis pathways and film purity are discussed.     

Synthesis of electro‐active membranes by chemical vapor deposition (CVD) process

In the past two decades, many research is being carried out on coating of textile membranes with conductive polymers. In order to functionalize the textile membranes, coating of different intrinsically conductive polymers can be applied on these membranes through appropriate coating techniques like electrochemical polymerization, wet chemical oxidation and chemical vapor deposition (CVD). Noticeably, CVD process is one of the most suitable and environment friendly technique. In this research, microporous polyester and polytetrafluoroethylene (PTFE) membranes were coated with conductive poly(3,4‐ethylenedioxythiophene) (PEDOT) by CVD process in the presence of ferric(III)chloride (FeCl₃) used as an oxidant. Polymerization of PEDOT on the surface of membranes and pore size was examined by optical microscope and scanning electron microscopy (SEM). Structural analysis investigated with ATR‐FTIR, which revealed the successful deposition of PEDOT on membranes without damaging their parent structures. The amount of PEDOT in PEDOT‐coated polyester and PTFE membranes was explored with the help of thermogravimeteric analysis. Electrical resistance values of PEDOT‐coated membranes were measured by two probe method. The effect of different electrolyte solutions such as, distilled H₂O, Na₂SO₄, HCl, and H₂SO₄ on electrical properties of produced conductive membranes was investigated after dipping for certain period of time. It was found that membranes dipped in H₂SO₄ show very low electrical resistance values, i.e. 0.85 kΩ for polyester membrane and 1.17 kΩ for PTFE membrane. The obtained PEDOT‐coated electro‐active membranes may find their possible utility in fuel cells, enzymatic fuel cells, and antistatic air filter applications. Copyright © 2014 John Wiley & Sons, Ltd.