Laser radiation tunable within the range of 4.35–5.45 <Emphasis Type="Italic">μ</Emphasis>m in a ZnTe crystal doped with Fe<Superscript>2+</Superscript> ions

We realized laser generation on a Fe²⁺:ZnTe crystal for first time. The crystal was pumped at room temperature by 40 ns pulses of an Er:YAG laser operating at a wavelength of 2.94 μm in the Q-switching mode. The output energy of the Fe²⁺:ZnTe laser was 0.18 mJ at a slope efficiency of 2.4% with respect to absorbed pumping energy. We achieved tuning of the Fe²⁺:ZnTe laser generation wavelength within the range of 4.35–5.45 μm using a prism-dispersion cavity.     

2.2 μm InGaAsSb/AlGaAsSb laser diode under continuous wave operating at room temperature

2.2 μm InGaAsSb/AlGaAsSb Sb-based type-I laser diodes (LDs) were fabricated, with cavity lengths of 1000 μm and stripe width of 150 μm. The high output performance was achieved with the threshold current density of the device is as low as 187 A/cm², slope efficiency of 0.2 W/A, and vertical and parallel divergent angles ϑ_⊥ = 42° and ϑ_| = 10°, respectively. The continuous wave operating up to 320 mW at room temperature (RT) were achieved.     

CW laser performance of Yb and Er,Yb doped tungstates

 Room temperature cw laser action of Yb³⁺-doped KY(WO₄)₂ and KGd(WO₄)₂ crystals at 1.025 μm and Er, Yb : KY(WO₄)₂ at 1.54 μm has been demonstrated under pumping by both Ti-sapphire laser and InGaAs laser diodes. A slope efficiency of Yb-lasers up to 78% has been obtained. Received: 19 June 1996     

Accumulation features and TL of TLD-500 detectors in a wide temperature range at pulsed and continuous high-dose irradiation

The results of a comparative research of thermoluminescence (TL) of TLD-500 detectors based on anion-defective corundum irradiated with continuous and pulsed X-ray and pulsed electron beams in a range of doses of 0.3 ÷ 10⁷ Gy, dose rates of 0.02–2.6·10¹¹ Gy/s, and in a temperature range of 300–950 K are presented. It is found that, in contrast to continuous irradiation, upon pulsed irradiation with a duration of 10 ns and dose rate of P_P ≥ 5·10⁶ Gy/s, the first linear region of dose dependences for TL peaks at 450, 580 and 830 K is, instead of saturation, followed by a second one with a smaller slope at doses near 2, 200 and 10³ Gy. Moreover, the slope of the second region increases with growing P_P. It was also found that dose dependence for the peak at 830 K in the area of the first linear region at 10–10³ Gy remains invariable at P_P ≤ 10¹⁰ Gy/s. It is shown that the upper limit of doses registered by TLD-500 detectors can be increased to 2·10³ and 6·10⁶ Gy for continuous and pulsed irradiation, respectively. New broadband UV luminescence with a maximum hν = 4.1 eV and half width H = 0.85 eV was registered within the TL peak spectrum at 830 K. Besides, the optical depletion spectrum in which a single band with hν = 5.2 eV and H = 1.6 eV is observed was investigated for a trap causing a peak at 830 K.     

Improvement of performance characteristics of deep violet InGaN DQW lasers using a strip DQW active region

The effect of the laser ridge width on the performance characteristics of deep violet In_0.082Ga_0.918N/GaN double quantum well (DQW) laser diodes (LDs) has been numerically investigated. Simulation results indicated that threshold current of LDs is decreased and slope efficiency and differential quantum efficiency (DQE) are increased by decreasing ridge width, whereas output power is decreased. The results also showed that a decrease of more than 1 μm in the ridge width reduces the threshold current, whereas the slope efficiency, output power, and DQE are decreased. A new DQW LD structure with a strip active region has been proposed to obtain a lower current threshold and higher output power, slope efficiency, and DQE. The results showed the InGaN DQW LD with a strip DQW active region has the highest output power, slope efficiency, and DQE; it also has a lower threshold current compared with that of the original LD. The comparative study conducted for the LDs with output emission wavelengths of 390, 414 and 436 nm has also confirmed the enhancement in LD performance using the strip DQW active region structure.     

Low energy ion beams by laser interaction

We developed an ion accelerator with a double accelerating gap system supplied by two power generators of different polarity. The ions were generated by laser ion source technique. The laser plasma induced by an excimer KrF laser, freely expanded before the action of accelerating fields. After the first gap action, the ions were again accelerated by a second gap. The total acceleration can imprint a maximum ion energy up to 160 keV per charge state. We analysed the extracted charge from a Cu target as a function of the accelerating voltage at laser energy of 9, 11 and 17 mJ deposited on a spot of 0.005 cm². The peak of current density was 3.9 and 5.3 mA for the lower and medium laser energy at 60 kV. At the highest laser energy, the maximum output current was 11.7 mA with an accelerating voltage of 50 kV. The maximum ion dose was estimated to be 10¹² ions/cm². Under the condition of 60 kV accelerating voltage and 5.3 mA output current the normalized emittance of the beam measured by pepper pot method was 0.22 π mm mrad.     

Spodumene and garnet luminescence excited by subnanosecond electron beams

Pulsed cathodoluminescence of spodumene and yttrium-aluminum garnet crystals activated by Mn²⁺ and Nd³⁺ ions, respectively, is investigated. The luminescence was excited upon crystal irradiation by electron beams with current densities of 35 and 100 A/cm² and average electron energy of ∼ 50 keV for 0.1, 0.25, and 0.65 ns. It is demonstrated that the electron beam duration decreased to several tenth of a nanosecond does not lead to essential changes of the mechanisms of pulsed cathodoluminescence excitation and character of its spectrum, but in this case, the intensity of luminescence of the hole centers increases compared with the intracenter luminescence.     

Modeling laser irradiation conditions for mucosal tissues in antimicrobial photodynamic therapy

We use computer modeling to analzye empirically selected conditions for antimicrobial photodynamic therapy of mucosal tissues. We calculate the optical and thermal fields for experimental conditions for low-intensity (cold) laser irradiation used in treatment of lesions in mucosal tissues stained by methylene blue: λ = 670 nm, power density 150–300 mW/cm², doses 9–18 J/cm²; λ = 632.8 nm, 15 mW/cm², dose 4.5 J/cm². For numerical estimates, we used the optical characteristics of methylene blue and three layers of mucosal tissues at the laser radiation wavelengths, and also the thermal characteristics of the tissues. The experimental conditions were optimized using the ratio of the tissue penetration depth for the absorbed optical energy and the penetration depth of methylene blue into the lesion, while maintaining safe tissue heating temperatures.     

Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers

The effect of the indium (In) composition of In_xGa_1−xN (GaN) waveguide layers on the performance of deep violet In_0.082Ga_0.918N/GaN double quantum well (DQW) laser diodes (LDs) emitting at 390 nm output emission wavelength has been numerically investigated. Simulation results indicated that by increasing In composition of the In_xGa_1−xN waveguide layers, the threshold current decreases, the slope efficiency, and differential quantum efficiency (DQE) increase, whereas the output power decreases. The increase in the In composition of the InGaN waveguide layers increases the refractive index and consequently increases the optical confinement factor (OCF) which result in the increase in the slope efficiency and DQE and the decrease in the threshold current. The decreasing movement of electron and hole carriers from the bulk waveguide layers to the active regions also causes to decrease the output power. A new LD structure with InGaN/GaN superlattice (SL) waveguide layers has been proposed to exploit the increased OCF of InGaN waveguide structures, and the enhanced electron and hole mobilities and the tunneling effect of the periodic structure of the SL structures. The results also showed that the use of InGaN/GaN SL waveguide structures effectively improves the output power, slope efficiency and DQE and decreases the threshold current of the LD compared with (In)GaN bulk waveguide structure.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

High-power diode-pumped Tm:YLF laser

A high-power, continuous-wave 3.5% Tm³⁺ doped LiYF₄ (Tm:YLF) laser has been developed. Using two Tm:YLF rods in a single cavity, 55 W of laser output at 1910 nm was obtained with a slope efficiency of 49%. The M² factor was found to be <3. With a single Tm:YLF rod, a maximum laser power of 30 W was obtained with a slope efficiency of 50%. The laser was tuned to the peak absorption wavelength of Ho:YAG of 1907.5 nm by an intracavity quartz etalon with an output power loss < 1 W. PACS 42.55.-f; 42.55.Xi; 42.60.Pk     

A comparison of resonantly pumped Ho:YLF and Ho:LLF lasers in CW and Q-switched operation under identical pump conditions

Singly 0.5 at.% Ho doped crystals of YLiF₄ (YLF) and LuLiF₄ (LLF) are studied under identical pump conditions in continuous-wave (CW) and Q-switched operation. Longitudinal end-pumped CW laser performance shows Ho:LLF to have a slightly lower threshold and a slightly higher slope efficiency with respect to absorbed pump power than Ho:YLF. Both lasers were operated on π-polarization. At a cavity output coupling of 20% and a crystal length of 30 mm, the Ho:LLF (Ho:YLF) laser yielded 18.8 W (18 W) of CW output at a wavelength of 2067.8 nm (2064.0 nm) for 41.4 W (42.2 W) of absorbed pump power with a slope efficiency of 67.1% (65.6%) and an optical-to-optical efficiency of 45.4% (42.6%) with respect to absorbed pump power. With the same output coupling and a crystal length of 40 mm, the Ho:LLF (Ho:YLF) laser yielded 20.5 W (18.1 W) of CW output at a wavelength of 2067.7 nm (2064.3 nm) for 51.5 W (50.0 W) of absorbed pump power with a slope efficiency of 58.4% (55.4%) and an optical-to-optical efficiency of 39.8 (36.1%) with respect to absorbed pump power. The influence of the temperature of the cooling mount on CW laser performance was studied and showed very similar results for both laser materials. At full pump power, a slope of −155 mW/°C (−149 mW/°C) was observed for the Ho:LLF (Ho:YLF) laser with a crystal length of 30 mm. In Q-switched operation, the Ho:LLF (Ho:YLF) laser produced 37 mJ (38.5 mJ) at a repetition rate of 100 Hz with a pulse duration of 38 ns (35 ns) at a wavelength of 2053.1 nm (2050.2 nm) with a slope efficiency of 30.3% (31%) and an optical-to-optical efficiency of 14.2% (13.9%) with respect to absorbed pump power. The beam quality was nearly diffraction limited (M ²<1.1).     

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron–hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10–15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.     

Intracavity frequency-doubled diode-pumped Nd : LaSc3(BO3)4 lasers

 An intracavity frequency-doubled 10%Nd : LaSc₃(BO₃)₄ (Nd : LSB) laser was investigated in different resonator configurations and in different operation modes under continuous wave (cw) and quasi-cw laser-diode pumping. With a Cr⁴⁺ : YAG passive modulator and a KTP crystal the second-harmonic output power at 531 nm amounted to 190 mW in Q-switched TEM₀₀ mode at 750 mW of pump power. In a sandwich resonator, when all the optical elements were in direct contact with each other, 0.8 W of green output power was obtained in cw mode under 2.7 W of pump power with a slope efficiency of 44%. In the same setup under fiber-coupled diode-laser array pumping (5.6 W of incident power), 1.2 W of green output power was achieved in cw mode and 1.4 W in quasi-cw mode. Received: 30 April 1996/Revised version: 1 July 1996     

Atomic force microscopy, Raman spectroscopy and nonlinear absorption properties of femtosecond laser irradiated CR-39

Investigations have been performed to explore ultrashort laser irradiation effects on the surface topography as well as structural and nonlinear absorption properties of a polymer CR-39. For this purpose, a CR-39 target was exposed in air to 25 fs, 800 nm Ti:sapphire laser radiation at fluences ranging from 0.25 J cm⁻² to 3.6 J cm⁻². The surface features, structural changes and nonlinear absorption were explored by AFM, Raman Spectroscopy and a Z-scan technique, respectively. Several topographical structures like bumps, explosions and nano cavities have been observed on the irradiated surface. Raman spectroscopy reveals changes in the fundamental structure of the polymer after the irradiation. Nonlinear absorption data contained by the Z-scan technique predict the dominance of three-photon absorption in case of pristine CR-39. Furthermore, nonlinear absorption (three or two photon) increases with increasing laser fluences and is well correlated with surface and structural changes revealed by AFM and Raman spectroscopy.     

Diode-pumped monolithic Er3+:Yb3+:YAl3(BO3)4 micro-laser at 1.6 μm

Efficient eye-safe 1.6 μm monolithic laser was realized in a c-cut, 0.7-mm-thick Er³⁺:Yb³⁺:YAl₃(BO₃)₄ microchip end-pumped by a quasi-continuous-wave 970 nm diode laser. At incident pump peak power of 20.4 W, a maximum output peak power of 2.6 W with a slope efficiency of 19% was obtained when the waist radius of pump laser beam was 220 μm. The spectra and profiles of output beam of the Er³⁺:Yb³⁺:YAl₃(BO₃)₄ monolithic laser were measured. The influences of the waist radius of pump laser beam on the slope efficiency and threshold of the monolithic laser were also investigated.     

Modeling and analysis of birefringence in magneto-optical thin film made by SiO2/ZrO2 doped with ferrite of cobalt

We report the device characteristics of the metal–dielectric high-reflectivity (HR) coated 1.55 μm laterally coupled distributed feedback (DFB) laser with metal surface gratings by using holographic lithography. The HR coating films are composed of Au/Ti/SiO₂. It provides a variety of advantages compared to the uncoated DFB laser on the same processed wafer while there is no degradation on current–voltage characteristics. For 3 μm wide and 300 μm long HR coated DFB laser, it exhibits a maximum output power of ∼17 mW and a threshold current of 14.2 mA at 20°C under continuous-wave mode. It is clear that the threshold current and slope efficiency are improved by 36% and 96%, respectively, due to the reduction of mirror loss. The metal–dielectric HR coating on one facet of DFB laser is found to have significantly increased characteristic temperature (i.e., T ₀∼88 K). Furthermore, the stable single-mode operation with an increased single-mode suppression ratio was achieved.     

Continuous-wave high power laser operation and tunability of Yb:LaSc3(BO3)4 in thin disk configuration

We report power scaling of the Yb³⁺:LaSc₃(BO₃)₄ (Yb:LSB) laser material in thin disk configuration. Employing a 300-μm thick Yb(25 at. %):LSB crystal, the continuous-wave output power around 1.0 μm wavelength reaches 40 W for 95 W of pump power at 974 nm; the overall optical-to-optical efficiency and the slope efficiency are 0.43 and 0.48, respectively. Preliminary experiments show continuous tuning of the laser output between 991 nm and 1085 nm. PACS 42.55.Xi; 42.60.Fc; 42.55.Rz     

805-nm diode-pumped continuous-wave 2-µm laser performance of Tm3+:BaGd2(MoO4)4 cleavage plate

End-pumped by a single-stripe 805-nm diode laser, a maximum continuous-wave output power of 290 mW with slope efficiency of 42% and 90 mW with slope efficiency of 44% around 2 μm were achieved in a 1.6-mm-thickness, unprocessed 7.2 at.% Tm³⁺:BaGd₂(MoO₄)₄ cleavage plate in a hemispherical and plano–plano cavities, respectively, when the absorbed pump power was 830 mW. The dependence of the polarization of output laser on the output coupler transmission was investigated. The influence of upconversion on the laser performance was analyzed. The results show that the unprocessed Tm³⁺:BaGd₂(MoO₄)₄ cleavage plate is a promising 2-μm laser gain medium pumped by diode laser around 808 nm.     

High-power resonantly diode-pumped CW Er<Superscript>3+</Superscript>:YAG laser

Using high-spatial and -spectral brightness laser diodes, a resonantly pumped high-power continuous-wave (CW) Er³⁺:YAG laser with up to 9 W of output power could be realized. Due to the lower upconversion loss in the 0.5% Er³⁺-doped crystal, intrinsic efficiencies of up to 64.3% and an optimum outcoupling of ∼20% were found. The output power was compared to quasi-three-level theory with good agreement. In an optimized cavity design a mode fill efficiency of ∼95% was achieved.