Embedded cluster calculations for hydrogen chemisorption on the (111) surfaces of fcc Co,Ni, Cu,Rh, Pd and Ag

We present a muffin tin based calculation on (TM)₃H, (TM)₇H and (TM)₁₉H clusters embedded at the surface of an effective jellium-like medium whose potential is treated in scattering length approximation. We consider the changes occurring when the d-like perturbation of the TM muffin tins is switched on. The broad chemisorption-induced resonance seen for H on the effective jellium surface is narrowed and shifted down in energy. Furthermore the occupation of this resonance is increased from about 1.1 electrons to about 1.4 (on 3d metals) or 1.8 (on 4d metals), due to d-like states dropping down from the d band to form a relatively welldefined “bonding state”. An antibonding state containing about 0.4 electrons is formed at the top of the d band. The results are compared with other calculations and with photoemission data. Implications for the metal-hydrogen distance and (for Ni) the demagnetizing effect of hydrogen chemisorption are discussed. We use the change in total single particle energy when the d-like perturbation is switched on to estimate trends in chemisorption energy along the 3d and 4d series. In the 3d case experimental data is available on the difference in chemisorption energy between Ni and Cu which is in reasonable agreement with our estimate.     

密度泛函理论研究H2与Rhn（n=1—8）团簇的相互作用

采用密度泛函理论对H₂与Rh_n（n=1—8）团簇的相互作用进行了系统研究.结果表明, Rh_nH₂体系的最低能量结构是在Rh_n团簇最低能量结构的基础上吸附H原子生长而成.吸附H原子没有改变Rh_n团簇的结构, 键长是影响Rh_n和Rh_nH₂磁矩的主要因素.从优化后的几何结构可以看出吸附后的H₂发生断键,表明H₂分子发生了解离性吸附.当n≤5,H原子的吸附以桥位为主,当n≥6时,H原子开始出现空位吸附.H原子的吸附提高了Rh_n的稳定性和化学活性,较小的吸附能表明H原子易从Rh_nH₂中解离出来.二阶能量差分表明4是Rh_nH₂和Rh_n团簇的幻数. 关键词： nH₂和Rh_n团簇')" href="#">Rh_nH₂和Rh_n团簇 平衡结构 电子性质     

H,O原子在过渡金属表面吸附能的规则性

用Allan的简化d带模型描叙过渡金属的表面电子态,用广义相移法计算吸附原子在表面的吸附能,结果表明,不仅很好地描绘了H,O在一个周期的过渡金属表面吸附能的变化趋势,而且所算得的吸附原子感应的分离能级也同紫外光发射谱的实验符合得很好;同时还指出,简单气体在过渡金属表面的吸附能呈现规则性变化主要决定于费密能级E_F与吸附原子的有效能级ε_a之差(E_F-ε_a),其次是转移矩阵元ν和能带宽度w_b。 关键词：     

A density functional study of atomic hydrogen and oxygen chemisorption on the relaxed (0001) surface of double hexagonal close packed americium

Ab initio total energy calculations within the framework of density functional theory have been performed for atomic hydrogen and oxygen chemisorption on the (0001) surface of double hexagonal packed americium using a full-potential all-electron linearized augmented plane wave plus local orbitals method. Chemisorption energies were optimized with respect to the distance of the adatom from the relaxed surface for three adsorption sites, namely top, bridge, and hollow hcp sites, the adlayer structure corresponding to coverage of a 0.25 monolayer in all cases. Chemisorption energies were computed at the scalar-relativistic level (no spin-orbit coupling NSOC) and at the fully relativistic level (with spin-orbit coupling SOC). The two-fold bridge adsorption site was found to be the most stable site for O at both the NSOC and SOC theoretical levels with chemisorption energies of 8.204 eV and 8.368 eV respectively, while the three-fold hollow hcp adsorption site was found to be the most stable site for H with chemisorption energies of 3.136 eV at the NSOC level and 3.217 eV at the SOC level. The respective distances of the H and O adatoms from the surface were found to be 1.196 ?and 1.164 ?. Overall our calculations indicate that chemisorption energies in cases with SOC are slightly more stable than the cases with NSOC in the 0.049–0.238 eV range. The work functions and net magnetic moments respectively increased and decreased in all cases compared with the corresponding quantities of bare dhcp Am (0001) surface. The partial charges inside the muffin-tins, difference charge density distributions, and the local density of states have been used to analyze the Am-adatom bond interactions in detail. The implications of chemisorption on Am 5f electron localization-delocalization are also discussed.     

H2在Li掺杂Al6Si+上吸附的理论研究

本文利用密度泛函理论的B3LYP/6-31G(d, p)和组态相互作用的QCISD/6-31G(d, p)研究了Al6Si+和Al6SiLi+团簇的几何和电子结构及其对H2分子的吸附,两种不同方法计算的H2分子在团簇上的吸附能非常一致。H2分子在Al6Si+团簇上的吸附能仅为-0.018 eV,Al6Si+团簇中掺杂Li原子可以明显增强其对H2分子的吸附。Al6SiLi+团簇吸附一个H2分子的吸附能可以达到-0.157 eV,吸附五个H2分子的平均吸附能为-0.088 eV。态密度和自然键轨道分析表明,电荷从Li原子向Si原子转移,H2分子在带正电的Li离子产生的电场中发生极化,从而在静电相互作用下吸附在Li原子周围。     

Study on the electronic structure and hydrogen adsorption by transition metal decorated single wall carbon nanotubes

The ground state geometry and electronic structure of various 4d transition metal (TM) atom (Y, Zr, Nb and Mo) decorated single wall carbon nanotubes (SWCNTs) are obtained using density functional theory and the projector augmented wave (PAW) method. We found a systematic change in the adsorption site of the transition metal atom with increasing number of d electrons. We also predicted that Y and Zr decorated SWCNTs are metallic whereas Nb and Mo decorated SWCNTs are semiconducting. From detailed electronic structure and Bader charge analysis we found that the systematic variation of the adsorption site with the number of d electrons is related to the decreasing amount of charge transfer from the TM atom to the SWCNT along the 4d series. We have also studied the hydrogen adsorption capabilities of these decorated SWCNTs to understand the role of transition metal d electrons in binding the hydrogen molecules to the system. We found that metallic SWCNT + TM systems are better hydrogen adsorbers. We showed that the hydrogen adsorption by a TM decorated SWCNT will be maximum when all the adsorptions are physisorption and that the retention of magnetism by the system is crucial for physisorption.     

CO在Pu(100)表面吸附的研究

采用密度泛函理论(DFT)研究了CO分子在Pu (100)面上的吸附. 计算结果表明：CO在Pu (100)表面的C端吸附比O端吸附更为有利,属于强化学吸附. CO吸附态的稳定性为穴位倾斜>穴位垂直>桥位>顶位. CO分子与表面Pu原子的相互作用主要源于CO分子的杂化轨道和Pu原子的杂化轨道的贡献. 穴位倾斜吸附的CO分子的离解能垒较小(0.280eV),表明在较低温度下,CO分子在Pu (100)表面会发生离解吸附,离解的C,O原子将占据能量最低的穴位. 关键词： 密度泛函理论 Pu (100) CO 分子和离解吸附     

CO在Pu(100)表面吸附的研究

采用密度泛函理论(DFT)研究了CO分子在Pu (100)面上的吸附. 计算结果表明：CO在Pu (100)表面的C端吸附比O端吸附更为有利，属于强化学吸附. CO吸附态的稳定性为穴位倾斜>穴位垂直>桥位>顶位. CO分子与表面Pu原子的相互作用主要源于CO分子的杂化轨道和Pu原子的杂化轨道的贡献. 穴位倾斜吸附的CO分子的离解能垒较小(0.280eV)，表明在较低温度下，CO分子在Pu (100)表面会发生离解吸附，离解的C，O原子将占据能量最低的穴位.     

A density functional theory study on the adsorption of CO and O₂ on Cu-terminated Cu₂O（111） surface

The adsorptions of CO and O2 molecules individually on the stoichiometric Cu-terminated Cu2O(111) surface are investigated by first-principles calculations on the basis of the density functional theory.The calculated results indicate that the CO molecule preferably coordinates to the Cu2 site through its C atom with an adsorption energy of -1.69 eV,whereas the O2 molecule is most stably adsorbed in a tilt type with one O atom coordinating to the Cu2 site and the other O atom coordinating to the Cu1 site,and has an adsorption energy of -1.97 eV.From the analysis of density of states,it is observed that Cu 3d transfers electrons to 2π orbital of the CO molecule and the highest occupied 5σ orbital of the CO molecule transfers electrons to the substrate.The sharp band of Cu 4s is delocalized when compared to that before the CO molecule adsorption,and overlaps substantially with bands of the adsorbed CO molecule.There is a broadening of the 2π orbital of the O2 molecule because of its overlapping with the Cu 3d orbital,indicating that strong 3d-2π interactions are involved in the chemisorption of the O2 molecule on the surface.     

含锰钢表面氢原子/氢分子吸附行为的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了氢原子和氢分子在纯铁表面和锰原子掺杂表面的吸附与解离行为.研究结果表明,氢原子可在纯铁(001)表面稳定吸附,吸附能按照顶位,桥位和心位依次增强;而溶质原子锰降低了氢原子距离表面的位置并强化了氢原子的吸附行为.氢分子在纯铁表面的吸附解离行为取决于氢分子距离模型表面的初始距离和初始空间构型.氢分子平行于纯铁(001)表面时,距离心位1.2?发生解离,而桥位、顶位均不会发生解离;氢分子垂直放置时,距离桥位0.6?、顶位1.0?发生解离,心位不会发生解离.氢分子平行于锰掺杂纯铁(001)表面时,距离桥位0.6?、顶位0.7?、心位1.2?发生解离;氢分子垂直放置时,距离桥位、心位0.8?发生解离,而顶位放置氢分子不发生解离.归纳可知,锰溶质原子掺杂会增加铁基体表面氢原子和氢分子的吸附作用并促进氢分子发生分解.     

The role of HH interactions in the formation of ordered structures on Ni and Pd single crystals

The interaction between H adatoms on a surface is calculated within the embedded cluster model of chemisorption. The model is first applied to the case of two H atoms on a free electron surface. The interaction energy is found to be an oscillatory function of the H-H separation R_ab. Application of the free electron model to the problem of chemisorption on transition metal surfaces leads to unphysical results with the prediction of formation of ordered H overlayers which are not observed in LEED experiments. We next include the l = 2 TM muffin tins. Results for H adsorption on the low index faces of Ni and Pd substrates are presented. Graphitic structures are predicted for the (111) faces of both Ni and Pd with the H atoms occupying both types of three-fold hollow sites on the surface. This agrees with the results of LEED experiments for H/Ni(111). Comparison with experiment is not possible in the case of H/Pd(111) owing to the lack of low temperature studies for that system. Zig-zag chains with the H atoms adsorbed in sites of three-fold coordination on alternate sides of the TM(110) rows are predicted for both Ni and Pd. This is in agreement with the results of He diffraction experiments for H/Ni(110). No structure determination has been done for H/Pd(110). Adsorption in the four-fold centre sites for H on the (100) faces of Ni and Pd is found to be unfavourable. The H atoms are expected to adsorb in sites of three-fold symmetry below the (100) surface for H on Pd with formation of a c(2 × 2) structure in agreement with the LEED observations. For H/Ni(100) the H atoms are believed to adsorb above the surface, away from the centre site and to bond to two surface Ni atoms. No short-range ordered structures are predicted in this case.     

LCAO studies of hydrogen chemisorption on nickel: I. Tight-binding calculations for adsorption on periodic surfaces

The model we have used to study hydrogen chemisorption on nickel surfaces is a tightbinding Extended Hückel method applied to finite (periodic) crystals up to about 250 atoms, the non-orthogonal basis set comprising five 3d orbitals, one 4s orbital and three 4p orbitals per atom. After calculating the band structure of fcc nickel, we have examined, by this model, the effect of the (100), (110) and (111) surfaces on the local density of states and the charge distribution. The results agree closely with moment calculations of the density of states in semi-infinite crystals and with experimental (XPS, UPS and INS) spectra. Extensive studies have been made of the influence of adsorption on the (partial) densities of states in order to illuminate the nature of the chemisorption bond. Particularly, we have concluded that both the 3d electrons and the conduction electrons take part in this bond. Equilibrium positions for adsorption on various sites have been determined and the adsorption energy has been computed and compared with experimental data. We find that the stability of adsorption decreases in the order (110) > (100) > (111) and Atop > Bridge > Centred.     

Theoretical investigation of the interaction between the hydrogen atom and Pd clusters

The chemisorption of hydrogen on small Pd_n clusters (n = 1–3) has been investigated using the pseudopotential procedure followed by configuration interaction (PP-CI). The interaction of H with the cluster modeling the three-fold hollow site of the Pd(111) surface is found to be stronger than that at the bridge and the top site models. When H occupies a top site the bonding has a partial ionic character as a consequence of charge transfer from the metal to H. At the bridge and hollow sites the bonding is essentially covalent. The MO energy spectrum of the Pd₃-H (hollow) cluster is characterized by the presence of a well separated MO level ～ 7 eV below the Fermi level which is consistent with the experimentally observed photoelectron spectra of H on Pd(111) surface. The bonding between H and Pd clusters occurs mainly via d-orbitals and seems to be of quite local nature.     

THE ADSORPTION OF Ge ON GaAS(ll0)

In the present work, the chemisorption of Ge on GaAs(1lO) was studied by a cluster model using the charge self-consistent extended H ückel method (EHT) and the results thus obtained were compared with those derived from the experiments. It was shown from the calculation that after chemisorption, the substrate tends to relax back to the ideal unrelaxed state, after cleavage. The tilted angle of the As-Ga bond was reduced from the well khown 27° to 10°.The gap states which were driven into both the valence band and the conduction band due to relaxation will-be introduced into the gap after chemisorption. From the calculation of the total energy of the cluster, it was found that the Ge atom could bind to both Ga and As atoms although the binding of the latter was somewhat stronger. The gap states were derived from the p states of Ge and the s and p states of Ga and As atoms. The states will serve as donors and acceptors for p and n type materials respectively . From a comparison with the previous results concerning studies of group Ⅲ and Ⅴ metals on GaAs(110) surface, it seems that the change of surface relaxation after chemisorption might be the origin of gap states and the cause for Fermi level pinningr. The explanation was first put forward by Chen et al . from their experimental studies . The present calculation also gives the core shifts of Ga(3d) and As(3d) of the clean relaxation surfaces with respect to that of the bulk as well as the core shifts of Ga(3d) and As(3d) after the chemisorption of Ge atom. A chemisorption induced state which is attributed to a precursor state for a heterojunction interface state is also obtained at a binding energy near 7eV which is in fairly good agreement with the experimental result.     

Magnetic and electronic properties of Cr,Mn, and Fe adatoms on Si(001): A first-principles study

The magnetic and electronic properties of TM (TM=Cr, Mn, and Fe) adatoms adsorption on Si(001) surface are studied by means of the first-principles method. For the adsorption of a single TM atom on Si(001), we obtain decreasing spin moments and increasing adsorption energies as TM varies from Cr to Fe. In the case of TM dimers adsorption, the calculated results show that the spin coupling changes from antiferromagnetic (AFM) to ferromagnetic (FM) as the 3d electrons increased. AFM coupling is found to be preferred for Cr, while FM coupling is energetically favorable for Mn and Fe. In the case of TM wires, we find that the FM state is energetically preferred for Mn and Fe atoms on the Si(001) surface, while for Cr wires, the up–down–up state for P–M–M site Cr atoms seems to be more energy favorable. We also find that the silicon surfaces become metallic for the adsorption of TM wires.     

Structural,electronic and magnetic properties of the 3d transition metal atoms adsorbed on boron nitride nanotubes

Adsorption configurations for a series of transition metal (TM) 3d atoms adsorbed on the zigzag (8, 0) BNNT at five different sites have been investigated using the first-principles PAW potential within DFT under GGA. The most stable adsorption sites are different for different TM atoms. Partially filled 3d metals V, Cr and Mn can bind strongly with zigzag (8, 0) BNNT, and Sc, Ti, Co and Ni can be chemically adsorbed on the (8, 0) BNNT. The binding between the Fe or Cu atom and the BNNT is only marginal. One unusual case is Zn. Its zero binding energy independent of the adsorption sites implies it can only physically adsorbed on the BNNT mainly stemmed from the van de Waals interaction. Electronic structure analyses show that: (1) for each TM atom adsorbed at five different sites, the total DOS curves of both majority and minority spins make a slightly relative shift along the energy axis, and for each site the total DOS of the minority spin shifts slightly in high energy direction with respect to that of the majority spin lead to a exchange splitting, except fully filled 3d metals Cu and Zn; (2) total DOS curves of both the majority and minority spins for the adsorbed systems shift to the lower energy region compared with that of the pristine (8, 0) BNNT. And the smaller 3d electrons number of the TM atom, the larger shift to the lower energy region of its DOS curves; (3) for V-, Mn- and Fe-adsorbed (8, 0) BNNT, only one type of electrons (either majority spin or minority spin) passes through the Fermi level implies these adsorbed systems are all half-metals.     

Optoelectronic properties of two-dimensional GaN adsorbed with H,N and O: A first-principle study

In this paper, we have investigated optoelectronic properties of two-dimensional GaN adsorbed with non-metal atoms: H, N and O based on first-principle. We find that adsorption of H, N and O atom on 2D GaN is achieved by chemisorption, and the most stable adsorption site is at the top of N atom. Band structure of 2D GaN after adsorbing H atom moves to low energy region and two-dimensional GaN is transformed into an n-type semiconductor. After adsorption of N atom, a new impurity energy appears at the Fermi level, and N adatom could induce magnetism into 2D GaN. Static dielectric constants of 2D GaN increase and adsorption spectrums have extend to infrared band when adsorbing H and N. Strong reflection peaks and strong adsorption peaks after adsorption are located at deep ultraviolet range, which is beneficial for optoelectronic application in the deep ultraviolet. Specifically, two-dimensional GaN adsorbed with H atom is more conducive to manufacture of nano-optoelectronic devices.     

H_2在Ni,Pd与Cu表面的解离吸附

用EAM方法(embeded-atommethod)研究H_2在Ni,Pd与Cu的(100),(110)与(111)面上的解离吸附.首先通过拟合单个H原子在Ni,Pd与Cu不同表面上的吸附能和吸附键长,得到H与这些金属表面相互作用的EAM势,然后计算H_2在这些表面上以不同方式进行解离吸附时的活化势垒E_a,吸附热q_(ad)与吸附键长R.并给出H_2在(110)面上解离吸附的势能曲线.计算结果表明H_2的解离吸附与衬底种类、衬底表面取向及解离方式有关.H_2在Ni表面上解离时活化势垒很低,而在Cu表面解 关键词：     

First-principles study of transition metal linear monoatomic chains adsorption on boron nitride nanotube

Structural, electronic and magnetic properties of six 3d transition metals (TM=V, Cr, Mn, Fe, Co and Ni) linear monoatomic chains adsorbed on the (5,5) boron nitride nanotube (BNNT) at five different sites have been investigated by first-principle calculations. The results indicate all TM chains can be spontaneously adsorbed on the outer surface of the BNNT. The stable adsorption sites are different for different TM chains. All TM chains can be adsorbed on the N site, while the adsorption on the Z site is unstable. The dispersion character occurs in energy band curves of stable TM/BNNT systems and bring about the band gap disappearance in comparison with that of pure (5,5) BNNT. Interestingly, the TM/BNNT systems with nearly half-filled 3d metals V and Cr at H and N sites, as well as Mn at A site show a half-metal character and are usable in spintronics devices. The different electronic properties of BNNT can also be achieved through decorations of the same TM chain on different sites. The TM chain adsorbed BNNT systems exhibit high stability, promising electronic properties and high magnetic moments, which may be useful for a wide variety of next-generation nanoelectronic device components.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).