退火温度对CuNps@ZnO纳米复合薄膜结构与光学性能的影响

使用磁控溅射结合惰性气体冷凝的方法制备了Cu纳米粒子,通过将Cu纳米粒子沉积与ZnO离子束溅射原位复合的方法制得了CuNps@ZnO纳米复合薄膜,并研究了退火温度对CuNps@ZnO纳米粒子复合薄膜的结构和光学性能的影响.通过对样品的表征发现所得产物中存在着低温条件下难以形成的立方相、岩盐结构的ZnO.并且,样品的微观形貌、结晶性和光学性能随着退火温度的变化而发生显著地变化.     

不同Ag光照时间对ZnO纳米花荧光增强的影响

采用水浴结合光照法,在Si(100)衬底上制备了Ag/ZnO纳米花结构,研究了不同Ag光照时间对ZnO发光性质的影响.通过X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)对Ag/ZnO纳米花的结构、形貌和光学性能进行了研究.研究表明,由水浴法制得的ZnO纳米花结构长度约1.0 μm,直径为200nm左右;不同光照时间的Ag掺杂后Ag/ZnO纳米花的衍射峰强度都增强,当光照时间为5min时,出现了Ag3O4的衍射峰.当光照时间为5 min时,Ag/ZnO纳米花结构具有最强的可见发射强度.     

表面活性剂辅助法制备纳米Z nO及光催化性能研究

以Zn(NO3)2·6H2 O、氨水和不同的表面活性剂为原料,采用沉淀法制备了具有不同微观形貌和尺寸的纳米ZnO,研究表面活性剂对纳米ZnO光催化降解甲基橙性能的影响.通过X射线衍射仪(XRD)、扫描电镜(SEM)和紫外可见分光光度计(UV-Vis)等对所制备纳米ZnO的物相、形貌及光吸收性能进行表征,并对其进行光催化性能测试.结果表明,以CTAB为表面活性剂所制备的纳米ZnO,粒径均匀、分散性良好、无明显团聚现象,并且对甲基橙的光催化降解性能最好,在2 h内降解率可达90.6;.     

钇掺杂多孔结构氧化锌纳米棒的制备与性能研究

采用两步法在二氧化锡掺氟(SnO2:F,FTO)导电玻璃基板上制备出钇(Y)掺杂多孔结构氧化锌(ZnO)纳米棒,首先利用浸渍-提拉法在FTO导电玻璃基板上制备ZnO晶种层,然后利用水热法在ZnO晶种层上生长Y掺杂ZnO纳米棒.研究了不同浓度Y掺杂ZnO纳米棒的晶相结构、微观形貌、化学组成及光学性能.实验结果表明:所制备的Y掺杂ZnO纳米棒为沿c轴择优取向生长的六方纤锌矿结构,随着Y掺杂浓度的增加,ZnO纳米棒(002)衍射峰强度先增大后减小,纳米棒的平均长度由1.3μm增加到2.6μm.ZnO纳米棒的形貌由锥状结构向柱状结构演化,纳米棒侧面的孔洞分布密度增加.所制备的Y掺杂ZnO纳米棒具有一个较弱的紫外发光峰和一个较强的宽可见发光峰.所制备样品的光学带隙随着Y掺杂浓度的增加而减小,其光学带隙在3.29～3.21 eV之间变化.利用Y掺杂ZnO纳米棒作为量子点敏化太阳能电池的光阳极可极大提高太阳电池的光电转换效率.     

直流反应磁控溅射法制备ZnO: Zr透明导电薄膜

以Zn∶ Zr为靶材,利用直流反应磁控溅射法制备了ZnO∶ Zr透明导电薄薄膜.研究了沉积压强对ZnO∶ Zr薄膜形貌、结构、光学及电学性能的影响.实验结果表明所制备的ZnO∶ Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向.沉积压强对ZnO∶ Zr薄膜的晶化程度、形貌、生长速率和电阻率影响很大,而对其光学性能如透光率、光学带隙及折射率影响不大.当沉积压强为2Pa时,ZnO∶ Zr薄膜的电阻率达到最小值2.0×10-3Ω ·cm,其可见光平均透过率和平均折射率分别为83.2％和1.97.     

ZnO纳米晶的面催化活性特性研究

以Zn( NO3)2和NaOH为起始原料,采用溶剂热法合成了片状和柱状纳米ZnO.采用XRD、XPS、FE-SEM、BET等对样品的形貌、组成和结构进行了表征.以罗丹明B作为模型污染物来评价其光催化性能,讨论了ZnO的形貌对其活性的影响.结果表明,片状纳米ZnO具有较高的(0001)活性面比例,表现出较高的光催化活性.     

ZnO/Fe2O3复合结构的制备及光电化学性能研究

采用水热法在FTO导电玻璃上制备出大面积高能面裸露的ZnO纳米片阵列.采用旋涂法在纳米片表面制备Fe2O3纳米颗粒形成ZnO/Fe2O3复合结构.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见光吸收光谱和三电极光电测试系统对复合薄膜的结构组成、形貌、光学性能和光电化学性质进行了表征和分析.研究结果表明,随着Fe2O3复合次数的增加薄膜的光吸收范围逐步拓宽到可见光区,ZnO/Fe2O3复合结构光电极的光电流明显高于单纯的ZnO纳米片阵列光电极.     

以NH4Cl为矿化剂水热合成ZnO自组装微纳米结构

采用NH4Cl为矿化剂,以金属锌片为锌源,水热合成出多种不同形貌的ZnO微纳米结构.其中ZnO纳米棒及铅笔都沿[001]方向生长,结晶性很好.在水热条件下, ZnO纳米棒通常倾向于自组装成花状的结构.本文从鲍林电负性的角度揭示了形成这些微纳米结构的化学反应机理,分析了Cl 和NH+4在这些微纳米结构形成过程中所起的作用.研究结果表明:温度和填充度对ZnO纳米结构的结晶性和形貌也有重要的影响.当温度从150 ℃升至180 ℃时,ZnO纳米晶的结晶性明显更好.当填充度从60;增加到80;时,除了形成ZnO纳米棒花状自组装结构以外,在金属锌片表面还趋于生成大量的ZnO微球.     

溅射功率对ZnO∶Si透明导电薄膜性能的影响

采用直流磁控溅射法在室温玻璃基片上制备出了掺硅氧化锌(ZnO∶ Si)透明导电薄膜.研究了溅射功率对ZnO∶ Si薄膜结构、形貌、光学及电学性能的影响.结果表明,溅射功率对ZnO∶ Si薄膜的生长速率、结晶质量及电学性能有很大影响,而对其光学性能影响不大.实验制备的ZnO∶Si薄膜为六方纤锌矿结构的多晶薄膜,且具有垂直于基片方向的c轴择优取向.当溅射功率从45 W增加到105 W时,薄膜的晶化程度提高、晶粒尺寸增大,薄膜的电阻率减小;当溅射功率为105 W时,薄膜的电阻率达到最小值3.83×10-4 Ω·cm,其可见光透过率为94.41;.实验制备的ZnO∶ Si薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极.     

ZnS-CdS核壳纳米微晶的制备与光学特性

采用微乳液法制备了核壳结构ZnS/CdS纳米微晶.以XRD、TEM表征其结构、粒度和形貌,UV、PL表征其光学性能.制得的纳米微晶近似呈球形,粒径4～5nm.研究了不同CdS壳层厚度的ZnS/CdS纳米微晶的光学性能,PL谱表明壳层CdS的修饰可减少ZnS的表面缺陷,表面态发射和非辐射跃迁减少,带边直接复合发光的几率增大,发光效率大大提高;在壳层CdS达到一定厚度时,PL谱却表现为CdS的特征发射,同时发现核心ZnS对壳层CdS的发光具有增强作用,提出了ZnS/CdS发光机理的能带模型.     

Effect of oxygen partial pressure on the growth of zinc micro and nanostructures

Zinc micro and nanostructures were synthesized in vacuum by condensing evaporated zinc on Si substrate at different gas pressures. The morphology of the grown Zn structures was found to be dependent on the oxygen partial pressure. Depending on oxygen partial pressure it varied from two-dimensional microdisks to one-dimensional nanowire. The morphology and structural properties of the grown micro and nanostructures were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Transmission electron microscopy (TEM) studies on the grown Zn nanowires have shown that they exhibit core/shell-like structures, where a thin ZnO layer forms the shell. A possible growth mechanism behind the formation of different micro and nanostructures has been proposed. In addition, we have synthesized ZnO nanocanal-like structures by annealing Zn nanowires in vacuum at 350 °C for 30 min.     

Influence of ambient gases on the morphology and photoluminescence of ZnO nanostructures synthesized with nickel oxide catalyst

The morphology and luminescence properties of ZnO nanowires synthesized using NiO catalyst in a chemical vapor deposition system under different growth ambient have been studied. ZnO nanostructures were prepared in nitrogen, ammonia and hydrogen ambient and characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy and photoluminescence. Growth in nitrogen ambient yields ZnO nanoneedles while growth with ammonia and hydrogen ambient ends up with ZnO nanowires. Presence of the Ni tip at the end in either morphology indicated the involvement of vapor–liquid–solid growth mechanism. Enhanced green emission in ZnO nanowires implies the presence of a high density of oxygen vacancies. Influence of the ambient gases on the morphology and optical properties of ZnO nanostructures is discussed.     

Morphology and photoluminescence properties of ZnO nanostructures fabricated with different given time of Ar

ZnO nanostructures were grown on Au‐coated Si (100) substrates by carbonthermal reduction method with the help of Ar at the beginning of growth. The structural and optical properties of ZnO nanostructures strongly depended on the supply time of Ar. When the given time of Ar gas current was 90s, sample was ZnO nanowires with hexagonal morphology. The Raman spectroscopy revealed the low level of oxygen vacancies and Zn interstitials in samples. Room temperature photoluminescence (PL) spectra exhibited the intensity of green emission increased on the condition of rich oxygen (decrease given time of Ar) and the nanowire had strongest intensity of UV emission compared with other nanostructures. Green emission is ascribed to the electron transition from the bottom of the conduction band to the antisite defect O_Zn level. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,optical and electrical properties of Ga-doped and (Ga,Co)-codoped ZnO films

The Ga-doped and (Ga, Co)-codoped ZnO films were grown on quartz glass substrate by inductively coupled plasma enhanced physical vapor deposition. The effect of Co doping and oxygen pressure on the structural, optical, electrical and magnetic properties of the as-grown films was investigated. The structural characterization revealed that high-quality films were grown with wurtzite structure and c-axis preferred crystalline orientation. The surface morphology was affected by Co doping and oxygen pressure. Room-temperature ferromagnetism was observed in (Ga, Co)-codoped ZnO films. We found that the optical and electrical properties were degraded with Co doping. The Ga-doped ZnO films had an average transmittance of above 88% in the visible wavelength, while (Ga, Co)-codoped ZnO showed a lower average transmittance (∼65%) due to the d-d transitions of Co²⁺. The resistivity and Hall mobility of (Ga, Co)-doped ZnO samples were lower than those of Ga-doped ZnO films when grown at the same oxygen pressure.     

Zinc oxide – analogue of GaN with new perspective possibilities

Zinc oxide due to specific electrical, optical and acoustic properties is the important semiconductor material, which has many various applications. There is growing interest in ZnO due to its potential applicability for optoelectronic devices such as light‐emitting diodes, laser diodes and detectors for UV wavelength range. ZnO properties are very close to those of widely recognized semiconductor GaN. The band gap of ZnO (3.37 eV) is close to that of GaN (3.39 eV) but ZnO exciton binding energy (60 meV) is twice larger than that of GaN (28 meV). Optically pumped UV lasing have been demonstrated at room temperature using high textured ZnO films. The excitonic gain close to 300 cm^–1 was achieved. ZnO thin films are expected to have higher quantum efficiency in UV semiconductor laser than GaN. The physical properties of ZnO are considered. PEMOCVD technology was used to deposit piezoelectric and highly transparent electroconductive ZnO films. Their properties are discussed. The experiments on polycrystalline ZnO films deposited by RF magnetron sputtering at different partial pressure of oxygen are presented. AFM images were studied in tapping mode for deposited films. The investigated films were dielectric ones and had optical transparency within 65‐85% at thickness in the interval 0.2‐0.6 μm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

ZnO纳米结构减反射层特性优化及对太阳能电池性能的影响

利用电化学沉积法在铜铟镓硒薄膜太阳能电池表面沉积一层ZnO纳米结构阵列减反射层.通过对沉积电位的操控,实现了对该纳米结构减反射层形貌、光学质量、反射率等特性的优化.在电池表面蒸镀电极后测试电池的电流电压曲线可知,相比于没有减反层的电池,沉积了纳米结构减反射层的电池利用氧化锌纳米结构的亚波长尺寸形成的蛾眼效应有效降低了表面光反射,增加光吸收,从而实现短路电流增加6.2;,电池效率提高了9.9;.     

Ag掺杂ZnO薄膜结构和光学特性研究

采用脉冲激光沉积技术制备出了Ag掺杂的ZnO薄膜.研究了Ag含量、衬底温度及氧压对ZnO结构和光学性能的影响.结果表明:Ag以替位形式存在于ZnO晶格中,Ag掺杂浓度较低时,样品具有高度c轴择优取向.衬底温度越高,薄膜的结晶质量越好,光学带隙越接近纯ZnO的带隙,而其紫外荧光峰在衬底温度为300 ℃时最强.氧压为10 Pa时,薄膜的结晶质量最好,紫外峰最强,其带隙则随氧压的增大呈先变窄后加宽的趋势.     

Growth and luminescence properties of large‐scale zinc oxide nanotetrapods

Large‐scale zinc oxide (ZnO) nanotetrapods have been grown on p‐type Si (111) substrate by oxidizing zinc pieces in air by thermal evaporation technique without the presence of any catalyst. The size and morphology of the nanostructures was found to depend on experimental parameters. The grown nanostructures were characterized by X‐ray Diffraction (XRD), Photoluminescence (PL), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), High Resolution TEM (HRTEM) and analysis of elemental composition was done by Energy Dispersive X‐ray analysis (EDX). The EDX spectrum shows that the grown product contains Zn and O only. The X‐ray diffraction pattern indicates that the microstructure of the obtained products is typical hexagonal wurtzite ZnO. The optical properties were studied using room temperature PL spectroscopy which indicates that the products are of high optical quality and the near band edge UV transition peak intensity increases with decrease in tetrapod size. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

氧分压对化学气相沉积法合成ZnO纳米结构形貌的影响

本文利用化学气相沉积(CVD)法在镀有Au(10 nm)膜的单晶Si(100)上制备了ZnO薄膜,并研究了不同的氧分压对ZnO形貌的影响.借助扫描电镜(SEM)、X射线衍射仪(XRD)和透射电子显微镜(TEM)对样品的形貌、结晶质量和晶体生长取向进行了表征.结果表明:当O2分压较小的时候,O2只能与Zn团簇的某些界面发生反应并逐渐结晶生成层状的ZnO微米团簇.当 O2分压较大的时候,ZnO通过二次生长形成由微米柱阵列和表面无序纳米线构成的分层复合结构,并且表面纳米线的密度随着氧分压的增加而增加.高分辨透射电镜(HRTEM)和选取电子衍射(SAED)分析表明,单根纳米线是沿[001]方向生长的ZnO单晶.