Polarizing properties of wire gratings in the long wave infrared

The parameters of wire gratings with various relationships between their period and the spacing of the wires have been studied experimentally. It is shown that a single grating with a period of 30 m and a wire diameter of 8 m polarizes not less than 92% of radiation in the 150–650 m wavelength range, while two such gratings polarize almost all the radiation in this range.     

Measurement of Optical Constants of CVD-Diamond for Short-Wavelength Far-Infrared Lasers

A diagnostic system using short-wavelength far-infrared (FIR) lasers (40–70 m in wavelength) is now being developed for high density and large volume plasmas. In the wavelength region, a CVD-diamond is the excellent materials for optical windows of the laser and the plasma vessel and beam splitters of a multichannel interferometer. To design these optical elements, the optical constants (refractive index n, absorption coefficient and transmissivity T) of the CVD-diamond have been measured precisely by using FIR lasers of 48-, 57- and 71-m in wavelength. As an example, the result for 57.1511 m light is n = 2.383(1) ± 0.002, = 0.19 ± 0.05 cm^-1 and T = 97.5 ± 1.5% at 1.023 mm in thickness.     

Submillimeter emission lines from CD2Cl2 optically pumped lasers

Fifty-five new submillimeter laser lines from optically pumped CD₂Cl₂, have been obtained in a FIR metallic waveguide resonator. Twenty-seven lines, ranging from 184 m to 1387 m, and twenty-eight lines, from 219 m to 888 m, have been observed when using CW CO₂ laser and CW N₂O laser optical pumping, respectively. The accuracy of wavelength measurements are of the order of 3.10^–3.     

Compact, high power FIR NH3 laser pumped in a three mirror CO2 laser cavity

A compact CO₂–NH₃ FIR laser system where an NH₃ laser cavity was inserted in pump, three mirror CO₂ laser cavity was designed. The total length of this system was about 1.8 m. Output energy of about 1 mJ (10 KW pea power) was obtained at the 152 m and 90 m lines in NH₃. Power conversion efficiency of 1.7 percent was obtained at the 90 m line.     

Analysis of the effects of doping and barrier design on the small-signal modulation characteristics of long-wavelength multiple quantum well lasers

This theoretical work has modelled the small signal response of InGaAsP and InGaAlAs multiple quantum well (MQW) lasers based on an ambipolar carrier transport model. The MQW parameters such as barrier bandgap, barrier width and the number of quantum wells have been optimized for high-speed modulation. The effect of the p-type doping and the strain of the InGaAs well have also been investigated.For the InGaAsP-based system, the optimization for maximum 3 dB bandwitdth shows that the optimum width is about 5 nm for 1.1 m barriers and 7 nm for 1.2 m barriers. The optimum barrier bandgap wavelength is about 1.1 m for the barrier width of 6 nm, about 1.15 m for 8 nm and 10 nm barriers. The p-doped MQW exhibits a higher modulation bandwidth because of its high differential gain and improved carrier distribution among the MQWs. The compressively strained InGaAs quantum well system has the potential for a higher modulation bandwidth. For the InGaAlAs-based system, the optimization for maximum 3 dB bandwidth shows that the optimum width is about 4 nm for a barrier wavelength of 1.10 m, and 6 nm for 1.2 m. The optimum barrier bandgap wavelength is about 1.1 m for a barrier width of 4 nm, and about 1.2 m for 6, 8 and 10 nm.     

Light absorption in laser-heated cavities

The absorption of laser light in 0.25–1 mm diameter gold cavities, irradiated for the purpose of generating high-temperature blackbody radiation with intense laser radiation of either =0.44 m or =1.3 m wavelength, was investigated. For =0.44 m radiation the absorption exceeded 0.9 for all conditions, but dropped to only 0.3 for the smallest cavities irradiated at =1.3 m. Entrance hole and cavity filling with plasma seems important for the understanding of the observations.     

Monte-Carlo calculation of bound-state properties

We elaborate on the role of the Green's function Monte-Carlo method in connection with quantum few-body systems and their computational treatment algorithms for calculation of bound-state properties are presented. We report results obtained from Green's function Monte-Carlo calculations both of ground-state properties of the mesic moleculesdt,dd, andpd as well as of excited states of the three-dimensional anharmonic oscillator and thedt molecule.Deceased     

Photoluminescence characteristics of 1.5-μm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy

We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states. PACS 42.62.Fi; 78.55.Cr; 78.66.Fd; 78.67.De     

FIR gain measurements in cw laser pumped CH3OD

Direct measurements of small signal and saturated gain in cw laser pumped CH₃OD are reported for three lasing transitions of 57 m, 82 m and 103 m. The 57 m transition has a measured gain of 0.6/m, the strongest gain in methanol reported so far. Moreover small gain saturation of this line makes it to be one of the strongest known cw FIR laser lines.     

Domain structure of “transcritical” films of permalloy

The domain structure of transcritical films of permalloy between 0·5 and 40 m thick has been studied by the powder method. A zigzag curvature of domain walls has been found ath> >3 m. The effect of external magnetic fields on powder depositions has been investigated, a model of domain structure supposing the closing of magnetic flux being proposed.Submitted for publication, not presented at the IVth ICMTF.     

Matter and light wave interferometry in gravitational fields

We consider the problem of finding the quantum mechanical phase associated with the propagation of a particle in a given external gravitational field, and conclude that it ism ds. In weak fieldsh this allows us to calculate the gravitationally induced phase on a freely traveling particle as 1/2 h P dx whereP is the ordinary momentum. This formula has the expected Newtonian limit and is then used to calculate effects in matter wave interferometry such as those due to gravity waves and the dragging of the ether frame by rotating bodies. Light wave interferometry is then considered and is shown to be also described by 1/2 h K dx , whereK is the wave vector of the light, and the integral is along the path of the ray. Matter and light wave interferometry are compared in various cases.A preliminary version of this work was presented at the Grenoble Workshop on Neutron Interferometry, June 1978.     

Positivity of entropy production in nonequilibrium statistical mechanics

We analyze different mechanisms of entropy production in statistical mechanics, and propose formulas for the entropy production ratee() in a state . When is steady state describing the long term behavior of a system we show thate()0, and sometimes we can provee()>0.     

Infrared Optical Characterization of PLT Thin Films for Applications in Uncooled Infrared Detectors

Lanthanum-modified lead titanate (PLT) thin films have been grown directly on Pt/Ti/SiO₂/Si (100) and LaNiO₃/Si (100) substrates by a modified sol-gel method. X-ray diffraction analysis shows that the PLT thin films are polycrystalline. The infrared optical properties of the thin films were investigated using infrared spectroscopic ellipsometry (IRSE) in the spectral range of 2.5–12.5 m. By fitting the measured ellipsometric parameter (tan and cos) data with a three phase model (air/PLT/Pt) for the PLT thin films on Pt/Ti/SiO₂/Si (100) and a four phase model (air/PLT/LNO/Si) for the PLT thin films on LaNiO₃/Si (100) substrates, and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index and extinction coefficient of the PLT thin films on Pt/Ti/SiO₂/Si (100) substrates are slightly larger than those on LaNiO₃/Si (100) substrates. Given the infrared semitransparent metal of Nickel currently used, the absorption of the Ni/PLT/Pt and Ni/PLT/LNO/Si multilayer thin films in this study is very large around 3.0 m and 5.7 m wavelength range and decrease to 15% or 20% in the 8–12.5 m wavelength region.     

Optical properties of cuprous telluride films

The structure of vacuum-deposited cuprous telluride Cu₂Te films deposited on carbon substrates was observed by means of an electron microscope. Films on glass substrates were also investigated by X-ray diffraction. The optical constants (the refractive index n and the extinction coefficient k) of Cu₂Te thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 0.4 m to 2.5 m. The variation of the optical constants with thickness for different evaporated films have been determined.     

An Approach to Linear Scalable DH-PHEMT Model for Millimeterwave Application

This paper describes a scalable small-signal equivalent circuit for 0.25 m gatelength Double Heterojunction delta-doped PHEMTs. The scaling rules for all elements except the pad capacitances and bondwire inductances have been determined. Good agreement is obtained between simulation results and measured results for 2 times 20 m , 2 times 40 m, 2 times 60 m, 2 times 100 m gate width (number of gate fingers times unit gate width) DH PHEMT.     

A proposed ultra low-noise optical receiver for 1.55 μm applications

A high-sensitivity optical receiver based on InP/InGaAs superlattice avalanche photodiode (SL-APD) followed by an InGaAs MESFET transimpedance pre-amplifier has been proposed for operation in 1.55 m wavelength region. The proposed optical receiver may be realised in the hybrid integrated circuit form. The low excess-noise factor of the SL-APD significantly reduces the value of minimum detectable optical power and improves the sensitivity of the over all receiver. The proposed receiver has been analysed theoretically. The results of computation show that the device has a high transimpedance gain (60 dB-ohm) with a bandwidth of 11 GHz for a photodetector capacitance of 110 fF. The sensitivity of the receiver has been found to be (–27.3d Bm) at operating bit rate of 15 Gb/s for a bit-error-rate of 10^–9. The performance of the receiver can be optimised in respect of transimpedance gain, bandwidth and sensitivity by following guidelines provided in this paper. The proposed photoreceiver outperforms the existing receivers based on p-i-n/FET or conventional APD/FET photoreceivers.     

A high-speed optical receiver

The design and performance of a high-speed optical receiver for the 1.3m and 1.5m wavelength regions is described. The receiver comprises an InGaAs PIN photodiode feeding into a bipolar transimpedance preamplifier. Measured receiver characteristics are found to compare favourably with theoretical predictions.     

Actively mode-locked 1.3 and 1.55 μm InGaAsP diode lasers

Active mode-locking of uncoated InGaAsP diode lasers having an external diffraction grating cavity was investigated experimentally. A high frequency r.f. signal and short-duration electrical pulses were used to drive the lasers. The pulse duration was measured by an ultrafast streak camera. Pulses as short as 13 ps at 1.3m and 29 ps at 1.55m were generated at a repetition rate of 1 GHz. The reason for obtaining broader pulses from the 1.55m laser which had the same structure as the 1.3m diode laser is explained.Formerly with GEC Hirst Research Centre, Wembley, Middlesex, UK.     

Ultrashort in-plane semiconductor microlasers with high-reflectivity microstructured mirrors

We present very compact, as short as 20 m long, low-threshold in-plane semiconductor lasers operating at a wavelength of 980 nm, in which microstructured mirrors have been formed at both cavity ends by deep reactive ion etching (RIE). The back mirror consists of a seven-period third order Bragg reflector with a measured reflectivity of 95%. The front mirror has a similar configuration, but consists of three periods with a lower reflectivity (80%) in order to allow output coupling. Lasing has been achieved from 20 m long and 8 m wide devices exhibiting a current threshold of 7 mA. These are among the shortest in-plane Fabry–Perot electrically pumped lasers demonstrated to date. Design issues are discussed, along with experimental data from which values for the reflectivity of the mirrors are derived. State-of-the-art electron beam lithography (EBL) and high-aspect-ratio RIE have been used for device fabrication, while additional strategies are proposed for the further improvement of the device performance.     

An Micro-Bandpasss (6.3≈7.6μm) Filter for the Multichannel Scanning Radiometer

Optical coatings are designed and produced for the multichannel scanning radiometer meteorological space instrument operating in the spectral range 6.37.6m. First the choice of substrates and layers materials is discussed. Then the substrate temperatures dependent effects of three different Te-enriched PbTe single layers on the dispersion and absorption characteristics and carrier concentration are studied. The experimental results demonstrate that the performance of the coating made using PbTe + 0.3 at. % Te material is better than that of the others. Finally, details of the spectral design and manufacture of such a filter which meets the demanding bandwidth and transparency requirements of the application are presented. This design model is based on the optical and semiconductor properties of a multilayer filter containing PbTe layer materials in combination with the dielectric dispersion of ZnSe deposited on the a Ge substrate. Comparisons between the computed spectral performance of the model and spectral measurements from manufactured coatings over a wavelength range of 6.37.6m are presented.