Structure and optical damage resistance of Zn:Mn:Fe:LiNbO3 crystals

The new non-volatile holographic storage materials, Zn:Mn:Fe:LiNbO₃ crystals, were prepared by Czochralski technique. Their microstructure was measured and analyzed by infrared (IR) transmission spectra. The optical damage resistance of Zn:Mn:Fe:LiNbO₃ crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of ZnO is over a threshold concentration. Its value in Zn(7.0 mol%):Mn:Fe:LiNbO₃ crystal is about three orders of magnitude higher that in Mn:Fe:LiNbO₃ crystal. The photoinduced birefringence change was measured by the Sénarmont's method. It decreased with ZnO concentration increasing. The dependence of the defects on the optical damage resistance was discussed.     

Defect structure and optical damage resistance of Hf:Fe:LiNbO3 crystals

A series of Hf:Fe:LiNbO₃ crystals were grown by the Czochralski technique with various doping concentrations of HfO₂. Their defect structures were analyzed by the UV-visible absorption spectra and infrared absorption spectra. The optical damage resistance of Hf:Fe:LiNbO₃ crystals was measured by the photo-induced birefringence change and the transmitted light spot distortion method. The results show that the optical damage resistance ability of Hf:Fe:LiNbO₃ crystals enhances remarkably with the HfO₂ concentration increasing when the HfO₂ concentration is lower than its threshold concentration (4 mol%). However, when the HfO₂ concentration exceeds its threshold concentration, the optical damage resistance ability of the crystals returns to decrease. This unusual behavior is explained by using the photovoltaic field produced in the crystals.     

Optical damage resistance of Ce:Fe:LiNbO3 crystals with various Li/Nb ratios

Ce:Fe:LiNbO₃ crystals were grown by the Czochralski technique with various ratios of Li/Nb = 0.94, 1.05, 1.20 and 1.38 in the melt. Their UV–Vis absorption spectra were measured in order to investigate their defect structures and their optical damage resistance was characterized by the photoinduced birefringence change and transmission facual distortion method. The optical damage resistance of Ce:Fe:LiNbO₃ crystals improves with the Li/Nb ratio increases. The dependence of the optical damage resistance on the defect structure of Ce:Fe:LiNbO₃ crystals is discussed in detail.     

The effect of In doping on optical properties of Fe:LiNBO3 crystals

Fe:LiNbO₃ and In:Fe:LiNbO₃ crystals were grown by Czochralski method. The absorption spectra were measured to investigate their defect structure. The photo damage resistance and photorefractive properties were measured. The photo damage resistance of the In:Fe:LiNbO₃ crystal in which the In concentration is above the threshold value is one order of magnitude higher than that of the Fe:LiNbO₃ crystal. The mechanisms of the violet shift of the absorption edge and the enhancement of the photorefractive effect of In:Fe:LiNbO₃ crystals were investigated.     

Properties of thermally fixed holograms in photorefractive LiNbO<Subscript>3</Subscript>:Zn:Fe crystals

We have investigated the properties of thermally fixed holograms in LiNbO₃ crystals doped with the optical damage inhibitor Zn as well as the photorefractive Fe dopants. Time decays of fixed holograms at different temperatures showed a single thermally activated process with an activation energy of ∼1.08 eV. We have also studied the effect of an external electric field on the diffraction efficiency of these holograms. Results analysis has provided a new method to determine the photovoltaic field of the samples as well as the effective concentration of photorefractive traps.     

Specific features of growth and structure of LiNbO<Subscript>3</Subscript> : Zn crystals near the ZnO concentration threshold of 6.76 mol %

The crystallization conditions and Raman spectra of LiNbO₃ : Zn crystals (0.02–8.91 mol % ZnO in the melt) have been investigated. It has been established that the most favorable conditions for growing optically and compositionally homogeneous heavily doped LiNbO₃ : Zn crystals, which are characterized by a low photorefractive effect, are implemented in the ZnO concentration range of ~4.0–6.76 mol % in the melt. Since the distribution coefficient K _eff decreases significantly with an increase in the ZnO concentration in the melt, one can obtain LiNbO₃ : Zn crystals with significantly different defect structures but identical zinc concentrations. A change in the zinc concentration in crystals has been shown to induce a stepwise change in the sequence order of the main (Li and Nb) and doping (Zn) cations and vacancies and stepwise anisotropic expansion of the oxygen octahedra along the polar axis. The number of kinks in the concentration behavior of the spectral-line widths (five kinks for the lines with frequencies of 630 (A ₁(TO)) and 876 cm^–1 (A ₁(LO))) significantly exceeds the number of thresholds (two) known from the literature.     

Growth and optical properties of In:Nd:LiNbO3 crystals

In, Nd double-doped LiNbO₃ (LN) crystals have been grown for the first time. Their infrared (IR) transmission spectra were measured and discussed to investigate their structure and defects. The optical damage resistance of Nd:In:LiNbO₃ crystals were characterized by straightly observing transmission facula distortion method. The optical damage resistance of In (4.0 mol%):Nd:LiNbO₃ was much higher than that of Nd:LiNbO₃. The defects were discussed in this paper to explain the optical damage resistance in the In:Nd:LiNbO₃ crystals.     

Spectroscopic properties of Er<Superscript>3+</Superscript> in Sc:LiNbO<Subscript>3</Subscript> crystal

The results of Er³⁺ ion spectroscopic analysis in Sc:LiNbO₃ crystals were reported. The line strengths from the ground state to the excited state were evaluated from the measured unpolarized absorption spectrum and analyzed by using standard Judd–Ofelt theory. For Sc(3 mol. %):Er (1 mol. %):LiNbO₃ crystal, the obtained intensity parameters are: Ω₂=3.72×10^-20 cm², Ω₄=1.07×10^-20 cm², and Ω₆=0.98×10^-20 cm². The fluorescence spectra and microsecond time-resolved spectra were investigated in the visible region. The excited state absorption transition strengths at 800 nm excitation were evaluated based on Judd–Ofelt theory. The results obtained here were compared to results from other research on Er:LiNbO₃ crystals. PACS 71.20.Eh; 77.84.Dy; 42.70.Hj; 42.62.Fi; 42.65.Ky     

Structure and optical damage resistance of near-stoichiometric Zn:Fe:LiNbO3 crystals

A series of near-stoichiometric Zn:Fe:LiNbO₃ crystals were grown by the high-temperature top-seed solution growth (HTTSSG) method from stoichiometric melts doped with 6 mol% K₂O. Infrared (IR) transmission spectra were measured and discussed in terms of the defect structure of the near-stoichiometric Zn:Fe:LiNbO₃ crystals. The results of the transmitted beam pattern distortion method show that the optical damage resistance of the near-stoichiometric Zn:Fe:LiNbO₃ crystals increases rapidly when the ZnO concentration exceeds a threshold value. The threshold value concentration of ZnO of the near-stoichiometric Zn:Fe:LiNbO₃ crystals is much lower than that of the congruent LiNbO₃ crystals. The dependence of the optical damage resistance on the defect structure of the near-stoichiometric Zn:Fe:LiNbO₃ crystals are discussed, and the holographic recording properties of the near-stoichiometric Zn:Fe:LiNbO₃ crystals are investigated.     

VUV F<Subscript>2</Subscript> laser ablation of sodium chloride

We report an investigation of the ablation of NaCl crystals at the 157-nm wavelength of the F₂ laser where there is very strong excitonic absorption. Probe-beam deflection and etch-rate measurements show that the interaction is characterised by a low ablation threshold (∼80 mJ cm^-2) and a capability for controllable material removal at the nanometer level. Scanning electron microscopy of the exposed surfaces show this to be microscopically smooth but with fine cracks present. It is demonstrated that micron-scale features can be formed in NaCl using 157-nm laser ablation, a result attributed to the strongly localised optical and thermal nature of the interaction. The results are discussed within the framework of a thermal vaporisation model. Received: 29 May 2002 / Accepted: 17 July 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +44-1482/465606, E-mail: p.e.dyer@hull.ac.uk     

Photorefractive properties of LiNbO3:Zn crystals related to the defect structure

LiNbO₃:Zn single crystals and powders were studied by precise X-ray diffraction methods. Structural refinement yielded new models of the intrinsic defect structure valid for different Zn concentration ranges. For concentrations up to 7 at. % in the crystal, Zn ions incorporate onto Li sites; at higher concentrations Zn ions are found on both Li and Nb sites. Photorefractive properties of LiNbO₃:Zn are discussed in the context of the deduced defect models. A smooth increase in the photoconductivity up to 7 at. % Zn is accounted for by a decrease of Nb antisites. Steeper growth of the photoconductivity at higher Zn concentrations is related to vanishing Li vacancies. Received: 17 November 2000 / Revised version: 23 January 2001 / Published online: 20 April 2001     

Interface reactions in [Fe/B]<Subscript>n</Subscript> multilayers: a way to tune from crystalline/amorphous layer sequences to homogeneous amorphous Fe<Subscript>x</Subscript>B<Subscript>100-x</Subscript> films

[Fe/B]_{n ≥2} multilayers were prepared by thermal evaporation, ion-beam sputtering and laser ablation. By applying in situ electron spectroscopies (UPS, XPS) and monitoring the electrical resistance during layer growth, evidence could be provided for the occurrence of interface reactions within the range of studied deposition temperatures (77 K ≤T ≤300 K). These reactions result in amorphous Fe_xB_100-x phases, which are spatially restricted to a width of less than 3 nm at the original interface. The amorphicity of the reacted interlayers was unequivocally proven by additional high-resolution electron microscopy (HRTEM) and their characteristically changed magnetic properties. Due to the well-defined width of the interface reaction, homogeneous amorphous Fe_xB_100-x films can be obtained by reducing the individual Fe and B layer thicknesses to below the above reaction depth, while for larger thicknesses layer sequences of the crystalline/amorphous/crystalline type will result. Received: 30 January 2002 / Accepted: 31 January 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-731/502-2963, E-mail: hans-gerd.boyen@physik.uni-ulm.de     

Superlinear photovoltaic currents in proton-exchanged LiNbO<Subscript>3</Subscript> waveguides

Photovoltaic currents along the c axis have been measured in α-phase LiNbO₃ proton-exchanged waveguides at several visible wavelengths for a guided-beam configuration. The light-intensity dependence is superlinear and all experimental curves are very well fitted by computer simulations using a two-centre model, with Fe²⁺/Fe³⁺ as primary and Nb_Li ⁴⁺/Nb_Li ⁵⁺ as secondary photovoltaic centres. The superlinear behaviour arises from a much higher effective photovoltaic length of Nb_Li ⁴⁺ (small polaron) compared with that of Fe²⁺. In β₁-phase guides, the photocurrents are much smaller than in α-phase guides and apparently do not show superlinear behaviour. Received: 22 October 2002 / Revised version: 6 January 2003 / Published online: 12 May 2003 RID="*" ID="*"Corresponding author. Fax: +34-91/3978-579, E-mail: m.carrascosa@uam.es     

Spectroscopic properties of Er<Superscript>3+</Superscript> ions in LiNbO<Subscript>3</Subscript> crystals codoped with HfO<Subscript>2</Subscript>

The results of the spectroscopic analysis of transition strengths for Er³⁺ ions in a series of Hf:Er:LiNbO₃ crystals with variable Hf content and fixed Er content are reported. Unpolarized UV-VIS-NIR absorption spectra, upconversion fluorescence spectra excited at 800 nm, and microsecond time-resolved spectra excited at 400 nm and 800 nm by 800 nm femtosecond laser were measured at room temperature. The HfO₂ incorporation has influence on Er³⁺ radiative lifetimes, and fluorescence branching ratios. For Hf(4 mol %):Er(1 mol %):LiNbO₃, Ω₂=2.63×10^-20 cm², Ω₄=2.86×10^-20 cm², and Ω₆=0.72×10^-20 cm². Ω₂<Ω₄ is contrary to the Er³⁺ general trend of Ω₂>Ω₄>Ω₆ when the Hf content is below its threshold concentration. In addition, the sum of Ω increases with the Hf content when the HfO₂ content below 6 mol % is unfamiliar. The upconversion mechanism is discussed in this work. PACS 71.20.Eh; 77.84.Dy; 42.62.Fi; 42.65.Ky     

Growth and optical properties of Hf,Ce co-doped lithium niobate crystals

In this paper, a series of Hf,Ce co-doped lithium niobate crystals with various HfO₂ concentrations were grown by Czochralski method. The ultraviolet-visible absorption spectra and the infrared transmittance spectra were measured to study defect structure of the crystals. The optical damage resistance was measured by the transmitted facula distortion method. The results showed that the optical damage resistance of Hf:Ce:LiNbO₃ was greatly improved when the Hf-doping concentration was above 4 mol%.     

掺锌LiNbO3晶体的生长及其光学性能

在LiNbO₃中掺进3mol%、5mol%、7mol%ZnO生长Zn:LiNbO₃晶体.测试Zn:LiNbO₃晶体的吸收光谱,研究Zn:LiNbO₃晶体吸收边紫移的机制.测试Zn:LiNbO₃晶体的红外光谱,研究Zn(7mol%):LiNbO₃晶体OH 吸收峰由3484cm^-1移到3530cm^-1的机制.测试Zn:LiNbO₃晶体倍频转换效率和相位匹配温度,研究Zn:LiNbO₃晶体倍频转换效率增强的机制.     

Zn∶Mn∶Fe∶LiNbO3晶体位相共轭性能和全息关联存储

在同成分LiNbO3中,掺入ZnO的摩尔分数分别为1%、3%、5%、7%和9%,掺入（质量分数）0.03% MnCO3和0.08%Fe2O3,采用提拉法生长了优质Zn∶Mn∶Fe∶LiNbO3晶体.测试Zn∶Mn∶Fe∶LiNbO3晶体的OH-红外吸收光谱,抗光损伤能力和位相共轭性能.Zn离子浓度在7%和9%时,OH-吸收峰移到3 528 cm－1,讨论OH-吸收峰移动机理.随着Zn离子浓度增加,抗光损伤能力增加.Zn离子浓度增加到7%,达到阈值.Zn∶Mn∶Fe∶LiNbO3晶体抗光损伤能力比LiNbO3晶体高二个数量级,研究高掺锌Mn∶Fe∶LiNbO3晶体抗光损伤增强机理.随着Zn离子浓度增加,Zn∶Mn∶Fe∶LiNbO3晶体位相共轭反射率降低,位相共轭响应速度增加.Zn∶Mn∶Fe∶LiNbO3晶体位相共轭镜消除了光波的位相畸变.以Zn∶Mn∶Fe∶LiNbO3晶体作存储介质进行全息关联存储实验.讨论全息关联存储的工作原理.以原图象的25%和50%进行寻址,在输出平面上接收到较完整的存储图象.     

Enhanced nonvolatile holographic properties in Zn,Ru and Fe co-doped LiNbO3 crystals

A series of LiNbO₃ crystals doped with various concentrations of ZnO and fixed concentrations of RuO₂ and Fe₂O₃ have been grown by the Czochralski method from the congruent melts. The type of charge carriers was determined by Kr⁺ laser (476 nm) and He–Ne laser (633 nm). The results revealed that the holes were the dominant charge carriers at blue light irradiation. Dual-wavelength and two-color techniques were employed to investigate the nonvolatile holographic storage properties of Ru:Fe:LiNbO₃ and Zn doped Ru:Fe:LiNbO₃ crystals. The essential parameters of blue nonvolatile holographic storage in Zn:Ru:Fe:LiNbO₃ crystals were enhanced greatly with the increase of Zn concentration. This indicates that the damage resistant dopants Zn²⁺ ions enhance the photorefractive properties at 476 nm wavelength instead of suppressing the photorefraction. The different mechanisms of blue photorefractive and nonvolatile holographic storage properties by dual wavelength recording in Zn:Ru:Fe:LiNbO₃ crystals were discussed.     

Investigation of optical photorefractive properties of Zr:Fe:LiNbO3 crystals

A series of Zr:Fe:LiNbO₃ crystals with various levels of ZrO₂ doping were grown by Czochraski technique. The optical damage resistance and photorefractive properties were deeply explored. The results showed that the ability optical damage resistance increased remarkably when the concentration of ZrO₂ is over threshold concentration, but which is lower than that of traditional damage resistant additive MgO. While, the holographic storage properties can be greatly enhanced by proper level of ZrO₂ doping in Fe:LiNbO₃. In terms of ions' site occupation model, the photo-damage resistant ability enhancement and the change of the photorefractive properties were discussed.     

Cr<Superscript>3+</Superscript> spectroscopy study in ZnO-codoped and Zn-in-diffused congruent LiNbO<Subscript>3</Subscript>:Cr crystals

This paper reports on the spectroscopy properties, absorption and luminescence, of Cr³⁺ ions in singly doped, ZnO-codoped, and Zn in-diffused LiNbO₃:Cr crystals. In addition to the broad absorption, inter-ionic transitions ascribed to Cr³⁺ ions located in Li⁺ and Nb⁵⁺ sites; [Cr]_Li and [Cr]_Nb centres two absorption bands at higher energy are reported and ascribed to the charge transfer transitions of the Cr³⁺ ions of the two defect centres. The charge transfer transitions are used as optical probe to study the role of the Zn ions in the Zn in-diffused LiNbO₃:Cr samples. It has been observed that the Zn-in-diffused processes created [Cr]_Nb centres in the diffusion zone. The location of the diffused Zn²⁺ ions is considered to be in Li⁺ site, displacing the Cr³⁺ ions from the Li⁺ sites, [Cr]_Li, to the Nb⁵⁺ positions, [Cr]_Nb.