SiC（0001）面衬底上自氧化栅介质和自对准形成石墨烯场效应晶体管

A scalable self-aligned approach is employed to fabricate monolayer graphene field-effect transistors on semi-insulated 4H-SiC （0001） substrates. The self-aligned process minimized access resistance and parasitic capacitance. Self-oxidized Al2O3, formed by deposition of 2 nm A1 followed by exposure in air to be oxidized, is used as gate dielectric and shows excellent insulation. An intrinsic cutoff frequency of 34 GHz and maximum oscillation frequency of 36.4 GHz are realized for the monolayer graphene field-effect transistor with a gate length of 0.2 μm. These studies show a pathway to fabricate graphene transistors for future applications in ultra-high frequency circuits.     

美开发无缺陷半导体纳米晶体薄膜可用于新领域

据报道,美国麻省理工学院的研究人员利用电子束光刻技术和剥离过程开发出无缺陷半导体纳米晶体薄膜。这是一种很有前途的新材料,可广泛地应用并开辟潜在的重点研究领域。相关报告发表在《纳米快报》杂志的网络版上。半导体纳米晶体的大小决定了它们的电子和光学性质。但想通过控制纳米晶体在表面上的布置,形成具有均匀结