InP基近红外波段量子线激光器的电致发光谱

制备了InP基近红外波段量子线激光器,在改变注入条件的室温连续电致发光谱测试中,观察到了不同于带填充效应的谱型变化.低激励时,高能峰先出现;随激励电流增加,高能峰减弱并随后消失,同时低能峰出现并激射.认为激光器随注入电流的增加表现出的这种特殊的激射谱,是由自组织纳米结构尺寸的不均匀分布引起的.     

硅基键合InP-InGaAsP量子阱连续激光器的研制

采用键合技术在Si基上制备了InP-InGaAsP量子阱激光器,实现了电注入室温连续工作.采用低温直接键合的方法,将Si衬底和InP-InGaAsP外延片键合在一起,并制成条宽6μm的脊波导边发射激光器.室温连续工作的1.55μm激光器阈值电流为48mA,对应的阈值电流密度和微分电阻分别为2.13kA/cm2和5.8Ω,在约220mA时输出光功率达15mW.     

Influence of Injector Doping Concentration on the Performance of InP-Based Quantum-Cascade Lasers

The influence of injector doping concentration N_inj on the performance of InP-based quantum-cascade (QC) lasers is investigated for devices emitting around 9.2-mum wavelength and injector doping concentrations between 1times10¹⁷ cm^-3 and 3times10¹⁷ cm^-3. The threshold current density, the dynamic range, the maximum emitted output power as well as the maximum operating temperature are found to increase with increasing N _inj. All in all, there exists no optimal value of N_inj per se. In fact, the injector doping concentration has to be adjusted individually depending whether emphasis is placed on obtaining low threshold current densities or on high-power operation     

In-Plane Coupling of Light From InP-Based Photonic Crystal Band-Edge Lasers Into Single-Mode Waveguides

In this paper, we analyze the coupling of light from photonic-crystal band-edge lasers into single-mode waveguides. Both active and passive devices lie in the same plane and coupling of light is achieved by using parabolic and nanotapers in InP based epitaxial structures. Two- and three-dimensional finite-difference time-domain methods are employed to analyze these devices. Coupling efficiencies higher than 80% can be obtained with parabolic couplers. We also present laser configurations that can reduce multiwavelength coupling of light into single-mode waveguides, using structures that are similar to coupled cavity Fabry-Peacuterot lasers     

半导体激光器的动态模式增益谱

本文通过对半导体激光器内部光与物质相互作用的分析和计算,证明条型激光器的光场漂移对激光的模式增益谱有很强的影响.它可以导致模式增益谱出现双峰结构。从而产生激光器的双纵模簇激射.     

Low-Footprint Optical Interconnect on an SOI Chip Through Heterogeneous Integration of InP-Based Microdisk Lasers and Microdetectors

We present a proof-of-principle demonstration of a low-footprint optical interconnect on a silicon-on-insulator (SOI) chip. The optical link consists of a heterogeneously integrated, InP-based microdisk laser (MDL) and microdetector, coupled to a common SOI wire waveguide. Applying an electrical current to the MDL resulted in a detector current up to 1 $mu$A.      

半导体激光器的光谱及参数测量

半导体激光器的输出光谱,反映了激光器本身的基本工作特性。本文从实验上研究了半导体激光器的输出光谱特性随偏置电流而变化的关系,并对其进行了理论分析。在此基础上,进一步测得了半导体激光器的热阻,增益峰值波长和纵模波长对载流子密度的相对变化率等基本参量。     

Design and Optimization of Electrically Injected InP-Based Microdisk Lasers Integrated on and Coupled to a SOI Waveguide Circuit

We have performed a numerical study involving the design and optimization of InP-based microdisk lasers integrated on and coupled to a nanophotonic silicon-on-insulator (SOI) waveguide circuit, fabricated through bonding technology. The theoretical model was tested by fitting it to the lasing characteristics obtained for fabricated devices, which we presented previously. A good fit was obtained using parameter values that are consistent with numerical simulation. To obtain optimized laser performance, the composition of the InP-based epitaxial layer structure was optimized to minimize internal optical loss for a structure compatible with efficient current injection. Specific attention was paid to a tunnel-junction based approach. Bending loss was quantified to estimate the minimum microdisk diameter. The coupling between the InP microdisk and Si waveguide was calculated as function of the bonding layer thickness, waveguide offset and waveguide width. To study the lateral injection efficiency, an equivalent electrical network was solved and the voltage-current characteristic was calculated. Based on these results, the dominant device parameters were identified, including microdisk thickness and radius, coupling loss and tunnel-junction p-type doping. These parameters were optimized to obtain maximum wall-plug efficiency, for output powers in the range 1-100 W. The results of this optimization illustrate the potential for substantial improvement in laser performance.     

基于发射光谱测量的中红外量子级联激光器热特性分析

基于不同脉冲工作条件下的激射光谱测量可以对激光器的一系列特性进行分析表征 ,为此建立了中红外激光器测量表征系统 ,其中包括引入双调制技术的 FTIR发射光谱测量系统和具有甚宽脉冲参数调节范围的 I-V、I-P测量系统 ,并通过计算机经由 GPIB总线进行控制 ,同时开发了相应的测量软件。利用此系统对采用气态源分子束外延技术生长的中红外波段 In Al As/In Ga As/In P量子级联激光器的热特性进行了测量分析 ,得出了器件的热阻参数 ,同时也对器件的激射温度范围、激射波长的温度特性、激射时的最高脉冲占空比、激射谱线宽度及其模式特征等一系列参数进行了测量 ,获得了有意义的结果。此测量系统在其他种类的中红外激光器测量上也有广泛用途     

Enabling Record-high Deep-Red/Near-Infrared Electroluminescence Through Subtly Managing Intermolecular Interactions of a Thermally Activated Delayed Fluorescence Emitter

Deep-red/near-infrared (DR/NIR) organic light-emitting diodes (OLEDs) are promising for applications such as night-vision readable marking, bioimaging, and photodynamic therapy. To tune emission spectra into the DR/NIR region, red emitters generally require assistance from intermolecular interactions. But such interactions generally lead to sharp efficiency declines resulting from unwanted quenching events. To overcome this challenge, herein, an advanced method via strategically managing the intermolecular interactions of thermally activated delayed fluorescence (TADF) emitters is proposed. The proof-of-concept molecule called DCN-SPTPA exhibits impressive resistance to quenching while delivering controllable aggregation behavior for redshifting the emission by installing an end-spiro group. Consequently, two emitters demonstrate similar photophysical properties and device performance at very low doping levels; while DCN-SPTPA -based OLEDs demonstrate a 1.3–1.4-fold enhancement of the external quantum efficiencies (EQEs) with respect to the control molecule at 5–20 wt.% doping ratios, affording DR/NIR emission at 656, 688, 696, and 716 nm with record-breaking EQEs of 36.1%, 29.3%, 28.2%, and 24.0%, respectively. Moreover, DCN-SPTPA -based nondoped NIR device also retains a state-of-the-art EQE of 2.61% peaked at 800 nm. This work first demonstrates instructive guidance for accurately manipulating the intermolecular interactions of red TADF emitters, which will spur future developments in high-performance DR/NIR OLEDs.     

体全息光栅外腔半导体激光器列阵的光谱特性

从理论上分析了强反馈外腔半导体激光器的工作原理,并采用了体全息光栅(VHG)外腔反射镜来改善大功率半导体激光器列阵(LDA)的光谱特性,这种体光栅具有很好的波长选择性,使得半导体激光器列阵的光谱线宽从2nm减小到0.22nm,增加了光谱亮度,而且随电流和温度变化的波长稳定性得到极大改善.