Modification of the Langmuir–Schaefer method for fabrication of ordered protein films

A modification of the Langmuir–Schaefer method for the fabrication of high-quality protein films on a solid substrate was proposed and applied to lysozyme. The procedure relies on the use of a pre-prepared protein solution, the parameters of which correspond to crystallization conditions. A lysozyme Langmuir monolayer was shown to be formed with the involvement of complexes, namely, dimers and octamers of protein molecules that are present in such protein solutions. These complexes apparently retain the structure after spreading a protein solution onto an aqueous subphase in a Langmuir trough. The thickness of the film after the transfer of the monolayer, which was formed by the proposed procedure, onto a solid substrate corresponds to the diameter of the octamer and this film is dense, continuous, and uniform, as was demonstrated by several methods: X-ray reflectivity, total external reflection X-ray standing wave, and atomic force microscopy. A layer of chloride ions that formed under the Langmuir monolayer was found at the air–protein film interface. This fact confirms an important role of the precipitating agent (chloride ions) in all steps of the formation of lysozyme films.     

Characterization of pure and urea-doped γ-glycine single crystals grown by solution method

Pure and urea-doped gamma-glycine (γ-glycine) single crystals were grown by solution method with slow evaporation technique. When urea was added as dopant, morphological alterations were noticed in γ-glycine crystals. Structural characterization of the grown crystals was carried out by single and powder X-ray diffraction (XRD) methods and it is observed that the samples crystallize in non-centrosymmetric space groups. UV-visible transmittance studies were performed to analyse optical transparency of pure and urea-doped γ-glycine crystals and found that the crystals were transparent in the entire visible-NIR region. Density and melting point of the grown crystals were measured. Second harmonic generation (SHG) for the grown crystals of this work was confirmed using Nd:YAG laser. Thermogravimetric and differential thermal analyses (TG/DTA) thermograms reveal that the materials have good thermal stability. From Microhardness studies, it is observed that urea-doped γ-glycine crystal is harder than pure (undoped) sample.     

Peculiarity of constant photocurrent method for silicon films with mixed amorphous–nanocrystalline structure

The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous–nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2–1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction.     

Raman investigation of ZnO and Zn1−xMnxO nanocrystals synthesized by precipitation method

Zn_1?xMn_xO nanocrystal samples have been successfully synthesized using the chemical precipitation method in aqueous solution. Comparing with pure ZnO NC, the Raman data recorded from the manganese-doped nanocrystals shows an enhancement of the peaks located at 334 and 439 cm^?1. Besides, a new feature at 659 cm^?1 emerges. X-ray diffraction (XRD) of the as-precipitated nanocrystal samples illustrates that Mn-doping only makes the XRD peaks of the as-precipitated Mn-doped nanocrystals shift towards lower angle values, but the crystal structure of bulk ZnO is still preserved in the Mn-doped samples. Hence, the high quality Zn_1?xMn_xO (x ? 0) nanocrystals are formed through the replacement of zinc ions by manganese ions.     

Preparation and properties of europium-doped phosphosilicate glasses obtained by the sol–gel method

In this work, we report the synthesis of europium-doped phosphosilicate glasses from tetraethylorthosilicate (TEOS), phenyltrietoxysilane (PTES) and ammonium phosphate (NH₄H₂PO₄) prepared by the sol–gel process. The matrix was synthesized by modified Stöber methodology. The alkoxide precursors PTES and TEOS were mixed with NH₄H₂PO₄, in the presence of europium III chloride, using ethanol as solvent in basic catalysis. These materials were studied by photoluminescence spectroscopy (PL), thermal analysis (TGA/DTA), transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). The results obtained for the materials show the formation of conchoidal-fractures, which are characteristics of glass materials. The thermal analysis showed the thermal stability of materials up to 300 °C. Eu III has been used as structural probe due to its photophysical properties. The PL spectra displays the lines characteristics of the Eu (III) ion ⁵D₀ → ⁷F_J (J = 0, 1, 2, 3 and 4). Wide bands were observed, indicating non-homogeneous sites that are characteristic of amorphous systems.     

Effect of Cu or Co addition on β-FeSi2 growth by molten salt method

β-FeSi₂ bulk crystals were grown by a molten salt method with Cu or Co addition. The effect of the Cu or Co addition on the structural, electrical and thermoelectric properties was investigated. A p-type semiconducting β-FeSi₂ crystal was obtained without any impurity addition. On the other hand, n-type β-FeSi₂ crystals were obtained by Co doping with 1.5–4 mol% addition. For the Cu addition, β-FeSi₂ crystals with large diameter columnar domains were obtained, and an increased β-phase formation was observed. In addition, a slight decrease in the carrier density and a slight increase in the Hall mobility were observed, probably due to the elimination of crystalline defects. The structural and electrical modifications of the β-FeSi₂ crystals by the impurity addition is discussed.     

Specific features of diffraction patterns from weakly absorbing objects recorded by the “refection” method

Some practical recommendations for phase analysis and precision determination of the lattice parameters of weakly absorbing objects studied by X-ray “reflection” method have been given. A method is suggested for taking into account the displacements of the diffraction intensity maxima caused by penetration of X-rays into the sample depth.     

Growth of Ga x In1 − x Sb solid solution single crystals by the Czochralski method

Crystallography Reports - Ga x In1 ? x Sb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A...     

Correlation between the method of preparation and the properties of the sol–gel HfO2 thin films

This work describes the preparation of HfO₂ thin films by the sol–gel method, starting with different precursors such as hafnium ethoxide, hafnium 2,4-pentadionate and hafnium chloride. From the solution prepared as mentioned above, thin films on silicon wafer substrates have been realized by ‘dip-coating’ with a pulling out speed of 5 cm min^?1. The films densification was achieved by thermal treatment for 10 min at 100 °C and 30 min at 450 °C or 600 °C, with a heating rate of 1 °C min^?1. The structural and optical properties of the films are determined employing spectroellipsometric (SE) measurements in the visible range (0.4–0.7 μm), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The main objective of this paper was to establish a correlation between the method of preparation (precursor, annealing temperature) and the properties of the obtained films. The samples prepared from pentadionate and ethoxide precursors are homogenous and uniform in thickness. The samples prepared starting from chloride precursor are thicker and proved to be less uniform in thickness. Higher non-uniformity develops in multi-deposition films or in crystallized films. A nano-porosity is present in the quasi-amorphous films as well in the crystallized one. For the samples deposited on silicon wafer, the thermal treatment induced the formation of a SiO₂ layer at the coating–substrate interface.     

Evolution and structure of low-angle grain boundaries in 6H–SiC single crystals grown by sublimation method

KOH etching and high-resolution X-ray diffractometry (HRXRD) were used to study the evolution and structure of low-angle grain boundaries (LAGBs), which extended along 〈1 -1 0 0〉 in 6H–SiC bulk crystals grown by the sublimation method. It was found that LAGBs formed in the growth process consisted of an array of threading dislocations and took different configurations under different radial temperature gradients (RTGs). HRXRD results proved that the domain at one side of LAGBs formed under a low radial temperature gradient has only tilts around the c-axis with respect to the other domain at another side of LAGBs.     

Determination of surface sites using infrared spectroscopy for mixed oxides of vanadium obtained by the sol–gel method

The presence of Lewis and Brønsted acid sites in calcined mixed oxides 10% V₂O₅/SiO₂, 10% V₂O₅/TiO₂, and 10% V₂O₅/Al₂O₃ obtained by sol–gel method was determined through infrared spectroscopy using pyridine as a molecular probe. Texturally, they are formed by mesopores and present high specific surface area and controlled porosity. Scanning electron microscopy revealed that vanadium is homogeneously distributed in the materials. The infrared spectra of samples submitted to different temperatures after the absorbance of pyridine were obtained. The existence of active metal ions on the surface of the materials was evidenced by the presence of Lewis and Brønsted acid sites, which confers them potential catalytic properties.     

Studies on conventional and Sankaranarayanan–Ramasamy (SR) method grown ferroelectric glycine phosphite (GPI) single crystals

Transparent single crystals of glycine phosphite were grown by Sankaranarayanan–Ramasamy (SR) method and conventional slow evaporation solution technique (SEST) which had the sizes of 100 mm in length, 30 mm diameter and 10×11×8 mm³. The conventional slow evaporation and Sankaranarayanan–Ramasamy method grown glycine phosphite single crystals were characterized using laser damage threshold, chemical etching, Vickers microhardness, UV–vis–NIR and dielectric analysis. The laser damage threshold value was higher in SR method grown GPI crystal as against conventional method grown crystal. The SR method grown GPI has higher hardness and also higher transmittance compared to conventional method grown crystal. The chemical etching and dielectric loss measurements indicate that the crystal grown by SR method has low density of defects and low value of dielectric loss compared to conventional method grown GPI crystal.     

Thermal diffusivity measurements on ternary Ge–Te–Tl glasses using Photo-thermal Deflection method: Effect of thallium addition

Photo-thermal Deflection (PTD) technique is used to investigate the thermal diffusivity (α) of Ge₁₇Te_83 ? xTl_x (0 ≤ x ≤ 13) glasses as a function of composition. The thermal diffusivity of these glasses is found to lie in the range 0.020 to 0.048 cm²/s, which is consistent with the memory type of electrical switching exhibited by these samples. Further, it is found that α shows an initial increase with Tl addition, followed by a decrease. The observed composition dependence of thermal diffusivity has been understood on the basis that the thallium atoms are incorporated as a covalent species for lower values of x, increasing the network rigidity; however, they enter as ionic species for higher x values, fragmenting the network. The initial increase in α is due to the increasing network rigidity and the subsequent decrease is because of the fragmentation of the network. Also, there is a strong correlation between the composition dependence of switching voltages observed earlier and the variation with composition of electrical resistivity and thermal diffusivity of Ge₁₇Te_83 ? xTl_x glasses obtained in the present study.     

The role of surfactant in synthesis of magnetic nanocrystalline powder of NiFe2O4 by sol–gel auto-combustion method

In this work, a new sol–gel auto-combustion method has been performed to synthesize single phase nickel ferrite nanocrystalline powders by using n-cetyltrimethylammonium bromide, as a cationic surfactant. The gels were prepared from ferric and nickel nitrates and citric acid. Ammonia was used as pH adjusting agent as well. The effects of the surfactant on the after combustion calcination process and the reduction of the resulting powder crystallite size which affects the magnetic properties of the material were investigated by XRD and DTA/TGA techniques. The results showed that the ignition of the gels in air have a self-propagating behavior. Addition of surfactant to the starting solution affected the crystallite size of the synthesized powders and their phase constitution. The crystallite size of nickel ferrite powder in sample with surfactant was obtained 31.2 nm. The other important result of this study was production of single phase nickel ferrite directly after combustion while without surfactant the nickel ferrite single phase was obtained only after a post-calcination process at 1000 °C.     

Microstructural characteristics and crystallization of CaO–P2O5–Na2O–ZnO glass ceramics prepared by sol–gel method

Porous phosphate-based glass ceramics prepared by the sol–gel method were characterized using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD) and differential thermal analysis (DSC). The 48CaO–45P₂O₅–2ZnO–5Na₂O glassy system can remain fully amorphous up to 550 °C. After heat treated at 650 °C, the obtained porous bodies consisted of dense struts and macropores where β-Ca₂P₂O₇ and Na₂CaP₂O₇ phases crystallized from the glass matrix. When treated at 750 °C, Ca₄P₆O₁₉ and NaZn(PO₃)₃ precipitated homogeneously as new phases among the residual glass matrix. The material was assessed by soaking samples in phosphate-based buffer solution (PBS) solution to determine the solubility and observe apatite formation.     

Gain cross-section of 1.06 μm emission in Nd-doped SiO2-LaF3 glass-ceramics prepared by sol-gel method

The room temperature near-infrared emission at 1.06 μm corresponding to the ⁴F_3/2 → ⁴I_11/2 laser transition in Nd³⁺-doped SiO₂-LaF₃ transparent glass-ceramics prepared by sol-gel method has been characterized in terms of the product of emission cross-section and fluorescence lifetime. Stimulated emission cross-sections have been calculated from experimental emission spectra using the Füchtbauer-Ladenburg equation. The precipitation of LaF₃ nanocrystals after heat-treatment, confirmed by X-ray diffraction, induces a significant increment of the 1.06 μm near-infrared emission compared with the as made sample. An enhancement of emission cross-section of about 10% has been achieved with increasing temperature of heat-treatment of the nano-ceramming process from 800 to 1000 °C, which is related to the growth of LaF₃ nanocrystals.