Phase transition behaviors of a ferroelectric thin film with long-range interactions

Within the framework of the mean-field approximation, the transverse-field Ising model is used to investigate the surface parameter modification of interaction constants and transverse fields on phase transition behaviors of a ferroelectric thin film with long-range interactions. The variation of Curie temperature as a function of the surface transverse field for different surface interaction constants or thickness is discussed. Meanwhile, the variation of Curie temperature as a function of the surface exchange interaction for different surface transverse fields is examined. In addition, the dependence of Curie temperature on the film thickness for different surface exchange interactions and surface transverse fields is obtained.     

Magnetic studies in evaporated Ni/Pd multilayers

The magnetic properties of Ni/Pd multilayers, prepared by sequential evaporation in ultrahigh vacuum, have been studied. The Ni thickness dependence of the magnetization and magnetic anisotropy is discussed. The temperature dependence of the spontaneous magnetization is well described by a T^3/2 law in all multilayers. A spin-wave theory has been used to explain the temperature dependence of the spontaneous magnetization, and the approximate values for the exchange interactions for various Ni layer thicknesses have been obtained.     

Influence of the range of interactions in thin magnetic structures

The properties of thin magnetic structures are influenced by many length scales that reflect both generic physics and chemical detail. A striking example is the experimentally determined shift of the critical temperature as a function of film thickness. While all systems experience a pronounced suppression in the transition temperature with decreasing film thickness, the magnitude of this shift cannot be reconciled with established theoretical results. By means of detailed Monte Carlo simulations, we address this discrepancy by investigating a model with long range interactions. The model also captures other features of real thin magnets, such as an almost linear temperature dependence for the surface magnetization. Our results demonstrate that the behavior of thin magnetic structures arises from a competition of length scales dictated by their slab-like geometry, the presence of surface boundaries, and crucially, the range of the interactions present.     

Ferroelectric phase transitions in ultrathin films of BaTiO3

We present molecular dynamics simulations of a realistic model of an ultrathin film of BaTiO3 sandwiched between short-circuited electrodes to determine and understand effects of film thickness, epitaxial strain, and the nature of electrodes on its ferroelectric phase transitions as a function of temperature. We determine a full epitaxial strain-temperature phase diagram in the presence of perfect electrodes. Even with the vanishing depolarization field, we find that ferroelectric phase transitions to states with in-plane and out-of-plane components of polarization exhibit dependence on thickness; it arises from the interactions of local dipoles with their electrostatic images in the presence of electrodes. Secondly, in the presence of relatively bad metal electrodes which only partly compensate the surface charges and depolarization field, a qualitatively different phase with stripelike domains is stabilized at low temperature.     

Temperature dependence of the photoluminescence of CdTe/ZnTe quantum-dot superlattices

The temperature dependence of the luminescence of CdTe/ZnTe quantum-dot superlattices (self-assembled quantum-dot multilayers) with ZnTe spacers of various thicknesses was studied. Luminescence quenching observed to occur with increasing temperature is shown to depend substantially on the thickness of the ZnTe spacer. Particular attention is focused on the temperature dependence of the luminescence of a structure with the smallest ZnTe layer thickness, containing clusters of regularly arranged quantum dots. The luminescence line of tunneling-coupled quantum dots appearing in this structure exhibits an unusual temperature dependence, more specifically, an anomalously large shift of the peak position and fast luminescence quenching with increasing temperature.     

Ultrathin Fe layers on Ag (1 0 0) surface

Iron layers (0.15-10 ML thick) deposited on Ag (1 0 0) substrates were investigated by conversion electron Mössbauer spectrometry over a broad temperature range. The layers were characterized by scanning tunneling microscopy. Different forms of the layers, depending on their thickness, were observed. Minimum roughness of the layers were found at 0.15 and 10 ML thickness values. The Mössbauer spectra showed systematic thickness dependence. At low thickness values, broad doublets were observed, while above 6 ML, magnetic split spectra appeared at room temperature. At low temperatures, magnetically split spectra appeared with parameter values characteristic of Fe-Ag and Fe-Fe atomic interactions. The hyperfine split spectra indicated magnetic anisotropy and an enhanced saturation hyperfine magnetic field of ?40 T. The latter value is the highest ever measured for iron in thin layers.     

Buffer effects of Ag layers on magneto-optical Co/Ge(1 0 0) ultrathin films

Magnetic properties of the Co/Ag/Ge(1 0 0) films grown at room temperature and 200 K were studied by the surface magneto-optical Kerr effect (SMOKE). More than 1.5 monolayer Ag buffer layers not only effectively block the interdiffusion between the capped Co layers and the Ge(1 0 0) substrate but also stabilize the magnetic phase. The temperature and thickness dependence on coercivity measurements show that interactions upon the interfaces are strongly correlated to the microstructures.     

超短超强激光产生正电子的蒙特卡罗模拟

通过理论分析,建立了超短超强激光与固体靶作用产生正电子的蒙特卡罗模拟模型及Geant4模拟程序。模拟研究了靶材料、靶厚度及超热电子温度等对正电子产额的影响,结果表明:对铝、铜、锡、钽、金、铅6种靶材料,金靶的正电子产额最高,是优秀的正电子产生靶;不同超热电子温度下存在不同的最佳靶厚度,在最佳靶厚度以下,正电子产额随靶厚度增长而增大,靶厚度取3 mm较为合适;超热电子温度越高,正电子产额也越高,提高激光强度是增加正电子产额的有效途径。模拟研究给出了正电子角分布及其能谱,结果显示,正电子发射明显前倾,从大于90方向范围发射的正电子数量极少,且超热电子温度越高前倾特点越明显,能量呈类麦克斯韦分布,靶背法线方向出射的正电子的温度随超热电子温度升高而升高。     

Measurements of magnetic interaction through silver in epitaxial Fe(110)/Ag(111) superlattices by Mössbauer spectroscopy

Magnetic interactions between Fe layers in Fe(110)/Ag(111) superlattices grown by molecular beam epitaxy have been observed using Mössbauer spectroscopy. By measuring the temperature dependence of the hyperfine field at the Fe layers, characteristics of the spin-wave spectrum can be deduced. As the Ag thickness between layers is increased, the magnetic interaction between Fe layers decreases, and the spin-wave spectrum undergoes a transformation from three-dimensional to quasi-two-dimensional.     

Phase transition in thin epitaxial ferroelectric films as derived from thermal measurements

The temperature dependence of the heat capacity of thin epitaxial films BaTiO₃/MgO is studied by the dynamic 3ω method in the thickness range 50–500 nm. It is revealed that the heat capacity exhibits diffuse anomalies due to phase transitions. The temperature of the ferroelectric phase transition T _C increases with decreasing film thickness. The reasons for the strong diffuseness of the transition and the nonlinear dependence of the transition temperature on the film thickness are discussed.     

Some relevant parameters affecting the glass transition of supported ultra-thin polymer films

We have measured, the thickness dependence of the glass transition temperature T(g)( h), using ellipsometry at variable temperature, for poly(methyl-methacrylate) (PMMA) of various tacticity in confined geometry. We report that several factors significantly affect T(g)( h): i) polymer microstructure (stereoregularity of PMMA) related to local dynamics; ii) interfacial interactions; iii) conformation of the polymer chains. These results raise many fundamental questions on the origin of the thickness-dependent glass transition. Why and how do the interactions with the substrate significantly affect T(g)( h)? Does T(g)( h) depend on the modifications of conformational parameters of the chains (their entropy)? What is the correlation between local dynamics and T(g)( h) in thin films? The aim of this paper is to summarise these open questions, which should stimulate further investigations in the thin polymer film scientific community.     

Thickness dependence of temperature coefficient of resistance of MnBi films

In-situ measurements of the temperature coefficient of resistance of electron-beam evaporated MnBi films are reported for the thickness range 30–180 nm. The thickness dependence of the temperature coefficient of resistance curves are plotted for different weight ratios, annealing times and substrate temperatures. The temperature coefficient of resistance shows marked size effect, and is negative for lower thicknesses (<100nm) and positive for higher thicknesses. The experimental data is in good agreement with the Mayadas-Shatzkes theory. The thickness dependence of the Curie temperature also indicates marked size effect.     

Growth parameter dependence of magnetic property of CrAs thin film

This paper has systematically investigated the substrate temperature and thickness dependence of surface morphology and magnetic property of CrAs compound films grown on GaAs by molecular-beam epitaxy. It finds that the substrate temperature affects the surface morphology and magnetic property of CrAs thin film more potently than the thickness.     

Temperature dependence of excitonic transitions in AlxGa1 − xAs/GaAs quantum wells

The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2–300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier height is observed. The influence of the barrier height on the temperature dependence of excitonic states in the quantum wells is analyzed.     

Energy gaps and transition temperatures of ultrathin superconducting films

Energy gaps and transition temperatures of extremely thin aluminum, indium and lead films, deposited on SiO or naphthalene, depend on the film thickness up to about 300 Å. This dependence is due to quantum size effects and to surface interactions.     

Temperature dependence of nuclear surface properties

Thermal properties of nuclear surface are investigated in a semi-infinite medium. Explicit analytical expressions are given for the temperature dependence of surface thickness, surface energy and surface free energy. In this model the temperature effects depend critically on the nuclear incompressibility and on the shape of the effective mass at the surface. To illustrate the relevance of these effects we made an estimate of the temperature dependence of the fission barrier height.     

Critical behaviour of magnetic thin film with Heisenberg spin-S model

The magnetic properties of a ferromagnetic thin film of face centered cubic (FCC) lattice with Heisenberg spin-S are examined using the high-temperature series expansions technique extrapolated with Padé approximations method. The critical reduced temperature of the system τ_c is studied as function of thickness of the film and the exchange interactions in the bulk, and within the surfaces J_b, J_s and J_⊥ respectively. A critical value of surface exchange interaction above which surface magnetism appears is obtained. The dependence of the reduced critical temperature on the film thickness L has been investigated.     

Conductivity in intrinsic quantum well wires: Semimetal-semiconductor transition

The effect of size quantization on the conductivity of semimetallic and semiconducting rectangular quantum well wires (QWW) is studied. A semimental-semiconductor transition is predicted to occur at a critical thickness of the wire. For wires of smaller thickness than the critical thickness, semiconducting behavior will occur with the conductivity decreasing exponentially with decreasing transverse dimensions of the wire. That is due to carrier freeze-out because of the increase in effective bandgap resulting from the size quantization. The effect dominates any thickness dependence of the mobility resulting from scattering interactions.     

ZnCdSe/ZnSe多量子阱的生长和激子光学性质的研究

用分子束外延在GaAs衬底上生长了ZnCdSe/ZnSe多量子阱结构.利用X射线衍射(XRD)、变温度PL光谱和ps发光衰减等研究了ZnCdSe/ZnSe多量子阱结构和激子复合特性.由变温PL光谱讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.     

Glass transitions and dynamics in thin polymer films: dielectric relaxation of thin films of polystyrene

The glass transition temperature T(g) and the temperature T(alpha) corresponding to the peak in the dielectric loss due to the alpha process have been simultaneously determined as functions of film thickness d through dielectric measurements for polystyrene thin films supported on glass substrate. The dielectric loss peaks have also been investigated as functions of frequency for a given temperature. A decrease in T(g) was observed with decreasing film thickness, while T(alpha) was found to remain almost constant for d>d(c) and to decrease drastically with decreasing d for d相似文献