The effect of compositional disorder on electronic band structure in GaxIn1 − xAsySb1 − yalloys lattice matched to GaSb

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga_xIn_1 − xAs_ySb_1 − yquarternary alloys lattice matched to GaSb. The effects of compositional variations are properly included in the calculations. Our theoretical results show that the compositional disorder plays an important role in the determination of the energy band structure of Ga_xIn_1 − xAs_ySb_1 − y/GaSb and that the bowing parameter is dominated by the group V-anion-based sublattice. Moreover, the absorption at the fundamental optical gaps is found to be direct within a whole range of the x composition.     

Synthesis and characterization of layered Li1−x(Ni0.5Co0.5)1−yFeyO2(0 ≤ (1 − x) ≤ 1 and 0 ≤ y ≤ 0.2) cathodes

Layered Li(Ni_0.5Co_0.5)_1−yFe_yO₂ cathodes with 0 ≤ y ≤ 0.2 have been synthesized by firing the coprecipitated hydroxides of the transition metals and lithium hydroxide at 700 °C and characterized as cathode materials for lithium ion batteries to various cutoff charge voltages (up to 4.5 V). While the y = 0.05 sample shows an improvement in capacity, cyclability, and rate capability, those with y = 0.1 and 0.2 exhibit a decline in electrochemical performance compared to the y = 0 sample. Structural characterization of the chemically delithiated Li_1−x(Ni_0.5Co_0.5)_1−yFe_yO₂ samples indicates that the initial O3 structure is maintained down to a lithium content (1 − x) ≈ 0.3. For (1 − x) < 0.3, while a P3 type phase is formed for the y = 0 sample, an O1 type phase is formed for the y = 0.05, 0.1 and 0.2 samples. Monitoring the average oxidation state of the transition metal ions with lithium contents (1 − x) reveals that the system is chemically more stable down to a lower lithium content (1 − x) ≈ 0.3 compared to the Li_1−xCoO₂ system. The improved structural and chemical stabilities appear to lead to better cyclability to higher cutoff charge voltages compared to that found before with the LiCoO₂ system.     

Two dimensional vortex structures in a superconductor slab at low temperatures

The dynamics of a two dimensional chain like structure of vortices is studied in the model of nonlinear time dependent Ginzburg–Landau equations (TDGL). The transition between different linear chains of vortices in a superconducting homogeneous slab with both surfaces in contact with a thin layer of metallic material is analyzed. The magnetization curve, vortex number, vortex configurations and modulus of the order parameter are studied as a function of the external magnetic field. We show how these vortex configurations are affected by the extrapolation length b (de Gennes boundary conditions), Ψ due to the proximity effects in a mesoscopic sample of area d_x × d_y, where d_y = 60ξ(0) and d_x varies discretely from 30ξ(0) to 12ξ(0). Possible connection with recent theoretical results in a two dimensional system of charged particles is discussed.     

A ceria layer as diffusion barrier between LAMOX and lanthanum strontium cobalt ferrite along with the impedance analysis

A thin interlayer of samarium doped ceria (SDC) is applied as diffusion barrier between La_1 ? xSr_xCo_yFe_1 ? yO₃ x = 0.1–0.4, y = 0.2–0.8 (LSCF) cathode and La_1.8Dy_0.2Mo_1.6W_0.4O₉ (LDMW82) electrolyte to obstruct Mo–Sr diffusion and solid state reaction in the intermediate temperature range of SOFC. We demonstrate the effectiveness of the diffusion barrier through contrasting the clearly defined interfaces of LSCF/SDC/LDMW82 against a rugged growing product layer of LSCF/LDMW82 in 800 °C thermal annealing, and analyze the product composition and the probable new phase. In addition, the measured polarization resistance is considerably lower for the half-cell with a diffusion barrier. Therefore, the electrochemical performance of the LSCF cathode is investigated on the SDC-protected LDMW82. The cell with LSCF (x = 0.4) persistently outperforms the one with x = 0.2 in polarization resistance because of its small low-frequency contribution. The activation energy of polarization resistance is also lower for La_0.6Sr_0.4Co_yFe_1 ? yO₃ (112–135 kJ/mol), than that for La_0.8Sr_0.2Co_yFe_1 ? yO₃ (156–164 kJ/mol). La_0.6Sr_0.4Co_yFe_1 ? yO₃ y = 0.4–0.8 is the proper composition for the cathode interfaced to SDC/LDMW82.     

Preparation,characterization and electrical property of Mn-doped ceria-based oxides

Manganese-doped ceria-based oxides, Ce_1−xMn_xO_2−δ (0.05 ≤ x ≤ 0.3) and Ce_1−x−yGd_xMn_yO_2−δ˙ (0.05 ≤ x≤ 0.2, 0.05 ≤ y ≤ 0.25) were synthesized, and crystal phase analysis by XRD and measurements of electrical properties were performed. Solubility limit of Mn in Ce_1−xMn_xO_2−δ˙ seemed to be between 5 mol% and 10 mol% and Mn₃O₄ was the main by-product above the solubility limit in the case of heat treatment at 1300 °C. Judging from the oxygen partial pressure dependence of total conductivity and emf measurements, Ce_1−xMn_xO_2−δ˙ is a single-phase mixed conductor within the composition below the solubility limit, and when the composition of Mn exceeds the solubility limit, it becomes the dual-phase mixed conductor of Ce_1−xMn_xO_2−δ˙ and Mn₃O₄. The doing of Mn in gadlia-doped ceria, Ce_1−x−yGd_xMn_yO_2−δ˙ (0.05 ≤ x ≤ 0.2, 0.05 ≤ y ≤ 0.25), was more difficult than that in CeO₂ presumably due to the preferential reaction between Gd and Mn to give GdMnO₃ to the GDC solid solution formation, and the Mn doping seems not to be so effective in preparing the mixed ionic–electronic conductor based on GDC.     

Oxygen non-stoichiometry and electrical conductivity of Pr2−xSrxNiO4±δ with x = 0–0.5

Oxygen non-stoichiometry and electrical conductivity of the Pr_2−xSr_xNiO_4±δ series with x = 0.0–0.5 were investigated in Ar/O₂ (pO₂ = 2.5 to 21 000 Pa) within a temperature range of 20–1000 °C. The equilibrium values of oxygen non-stoichiometry and electrical conductivity of these nickelates were determined as functions of temperature and oxygen partial pressure (pO₂). The nickelates with x = 0–0.5 appear to be p-type semiconductors in the investigated temperature and pO₂ ranges. The nickelates with x = 0.3–0.5 show very feebly marked pO₂ dependencies of the conductivity. Pr_1.7Sr_0.3NiO_4±δ shows the anomalies of the conductivity versus oxygen partial pressure which can be related to the orthorhombic–tetragonal crystal structure transformations. The conductivity of the Pr_2−xSr_xNiO_4±δ samples correlates with the average oxidation state of the nickel cations. The samples with x = 0.5 have the highest nickel oxidation state (≈ 2.5+), the highest [Ni³⁺]/[Ni²⁺] ratio close to 1 and show the highest conductivity (≈ 120 S/cm) in the whole pO₂ and temperature ranges investigated.     

On the superconductivity and structural properties of YBa2Cu3 − xCdxO7 − y

A series of superconducting cuprates with the nominal composition YBa₂Cu_3 − xCd_xO_7 − yand the effect of Cd substitution on Cu sites in this compound is presented. X-ray powder diffraction patterns for these cadmium cuprates with reduced diamagnetism indicate an orthorhombic unit cell like-perovskite structure for (0 ≤ x ≤ 0.15), while for higher Cd concentration, i.e.x = 1.0 the material is polyphasic. The observed superconducting transition temperature of the samples is nearly the same ([formula] K), except for (x = 1.0) whereT_cdrops to 72 K and a transition from metallic to semiconducting behavior of the normal state of the resistivity is observed. Such a decrease inT_cfor higher Cd concentration could be attributed to the presence of the green phase in this composition.     

Composition and lattice mismatch dependent dielectric constants and optical phonon modes of InAs1−x−ySbxPy quaternary alloys

Based on the pseudopotential formalism under the virtual crystal approximation, the dielectric and lattice vibration properties of zinc-blende InAs_1−x−ySb_xP_y quaternary system under conditions of lattice matching and lattice mismatching to InAs substrates have been investigated. Generally, a good agreement is noticed between our results and the available experimental and theoretical data reported in the literature. The variation of all features of interest versus either the composition parameter x or the lattice mismatch percentage is found to be monotonic and almost linear. The present study provides more opportunities to get diverse high-frequency and static dielectric constants, longitudinal and transversal optical phonon modes and phonon frequency splitting by a proper choice of the composition parameters x and y (0 ⩽ x ⩽ 0.30, 0 ⩽ y ⩽ 0.69) and/or the lattice mismatch percentage.     

The generalized Fresnel–Hadamard complementary transformation for asymmetric beamsplitter

Based on the newly developed parameterized coherent-entangled state representation we propose so-called the generalized Fresnel–Hadamard complementary transformation for asymmetric beamsplitter, which is unitary. The new unitary operator plays the role of both Fresnel transformation for a₁ sin θ ? a₂ cos θ and Hadamard transformation for a₁ cos θ + a₂ sin θ, respectively. Physically, a₁ sin θ ? a₂ cos θ and a₁ cos θ + a₂ sin θ could be a asymmetric beamsplitter’s two output fields. We show that the two transformations are concisely expressed in the parameterized coherent-entangled state representation as a projective operator in integration form.     

High temperature properties of the n = 2 Ruddlesden–Popper phases (La,Sr)3(Fe,Ni)2O7−δ

The crystal chemistry and mixed conductor properties of the n = 2 member of the Ruddlesden–Popper (R–P) phases Sr_3−xLa_xFe_2−yNi_yO_7−δ with 0 ≤ x ≤ 0.3 and 0 ≤ y ≤ 1.0 have been studied at high temperature. High-temperature X-ray diffraction and thermogravimetric measurements of the equilibrium pO₂ (10^− 5 ≤ pO₂ ≤ 1 atm) in the temperature range 400 ≤ T ≤ 1000 °C indicate that the Sr₃FeNiO_7−δ phase is able to accommodate a large oxygen non-stoichiometry (δ ∼ 1.5) without structural transformations. The electrical conductivity and oxygen permeability increase with the substitution of Ni for Fe in the range 550 ≤ T ≤ 1000 °C. The electrical transport of the Sr₃FeNiO_7−δ phase is thermally activated and the activation energy decreases with the substitution of Ni for Fe for a given oxygen content. The increase in the oxygen permeation flux with increasing Ni content is due to an increasing oxygen non-stoichiometry and a lower activation energy for permeation.     

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures

We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga_xIn_1 − xAs_1 − yN_y/GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 μ m can be obtained for a wide range of In and/or N concentrations. However, in most Fabry–Perot lasers and vertical cavity surface emitting lasers (VCSELs) reported in the literature, the threshold current density plotted as a function of the relative In/N composition (R =  (1  − x) / y) indicate a broad minima for 40  < R <  70, suggesting an optimum relative composition. We also present the results of our studies concerning the optical quality of Ga_xIn_1 − xAs_1 − yN_y/GaAs single quantum wells for R =  15. We show that the optical quality of GaInAsN can be improved while achieving a red shift in the PL spectra. This is unlike the results obtained by rapid thermal annealing or conventional annealing, which are widely employed as post-growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue shift.     

Structure and conductivity investigations of alkaline earth substituted uranium oxide,U1 − xMxO2 ± δ (M = Mg,Ca, Sr) for solid oxide fuel cell applications

Alkaline earth substituted UO₂ (U_1 − xM_xO_2 ± δ; M = Mg, Ca, Sr; 0.1 ≤ x ≤ 0.525) with fluorite structure was synthesized in reducing atmosphere. Structure and conductivity properties of U_1 − xM_xO_2 ± δ fluorites were investigated for possible application in solid oxide fuel cells (SOFC). At room temperature and ambient atmosphere the materials are stable; however they decompose at an oxygen partial pressure p_O2 > 10^− 4 atm and temperatures higher than 600 °C. The total conductivity measured for the best conducting U_1 − xM_xO_2 ± δ material with M = Ca and x = 0.177 is as high as 3 S/cm at p_O2 < 10^− 4 atm at 600 °C. The relatively low ionic transference number (t_i∼0.02) is disadvantageous for potential use as electrolyte material for SOFC applications. The high conductivity and possible depolarization effects suggest potential use as anode materials in SOFC.     

Ionic and electronic conductivities,stability and thermal expansion of La10 − x(Si,Al)6O26 ± δ solid electrolytes

Apatite-type La_10 − xSi_6 − yAl_yO_{27 − 3x/2 − y/2} (x = 0–0.33; y = 0.5–1.5) exhibit predominant oxygen ionic conductivity in a wide range of oxygen partial pressures. The conductivity of silicates containing 26.50–26.75 oxygen atoms per formula unit is comparable to that of gadolinia-doped ceria at 770–870 K. The average thermal expansion coefficients are (8.7–10.8) × 10^− 6 K^− 1 at 373–1273 K. At temperatures above 1100 K, silicon oxide volatilization from the surface layers of apatite ceramics and a moderate degradation of the ionic transport with time are observed under reducing conditions, thus limiting the operation temperature of Si-containing solid electrolytes.     

Defect equilibria and partial molar properties of (La,Sr)(Co,Fe)O3−δ

The oxygen nonstoichiometry δ of La_1−xSr_xCo_1−yFe_yO_3−δ (x = 0.6 and y = 0.2, 0.4) was investigated by thermogravimetry in the range 703 ≤ T/°C ≤ 903 and 1E−5 < pO₂/atm < 1. The oxygen deficit increases with increasing T and decreasing pO₂. Electronic conductivities σ were measured as a function of pO₂ in the range 1E−5 < pO₂/atm < 1 at 700 ≤ T/°C ≤ 900. At constant T, a p-type pO₂-dependence of σ is observed. Oxygen nonstoichiometry data are analyzed with regard to the enthalpy and entropy of oxidation ΔH_ox^θ and ΔS_ox^θ, as well as to the partial molar enthalpy and entropy of oxygen with respect to the standard state of oxygen (pO₂^θ = 1 atm), (h_O − H_O^θ) and (s_O − S_O^θ), respectively. For 2.67 ≤ (3 − δ) ≤ 2.79, (h_O − H_O^θ) decreases with increasing δ, while (s_O − S_O^θ) is constant within the limits of error. Defect chemical modelling was performed by an ideal solution model under consideration of three different valence states for B-site ions (Co or Fe). The dependence of σ on δ is modelled, using calculated defect concentrations as functions of δ. Deviations from the ideal behaviour suggest an immobilization of n-type charge carriers by oxygen vacancies.     

Band overlap via chemical pressure control in double perovskite (Sr2−xCax)FeMoO6 (0 ⩽ x ⩽ 2.0) with TMR effect

The chemical pressure control in (Sr_2−xCa_x)FeMoO₆ (0 ⩽ x ⩽ 2.0) with double perovskite structure has been investigated systematically. We have performed first-principles total energy and electronic structure calculations for x = 0 and x = 2.0. The increasing Ca content in (Sr_2−xCa_x)FeMoO₆ samples increases the magnetic moment close to the theoretical value due to reduction of Fe/Mo anti-site disorder. An increasing Ca content results in increasing (Fe²⁺ + Mo⁶⁺)/(Fe³⁺ + Mo⁵⁺) band overlap rather than bandwidth changes. This is explained from simple ionic size arguments and is supported by X-ray absorption near edge structure (XANES) spectra and band structure calculations.     

New ternary ThCr2Si2-type iron–selenide superconducting materials: Synthesis,properties and simulations

Very recently, the first ThCr₂Si₂-type ternary superconductor K_0.8Fe₂Se₂ with enhanced T_C ～ 31 K has been discovered. This finding has stimulated much activity in search for related materials and triggered intense studies of their properties. Indeed, very soon superconductivity (T_C ～ 28–32 K) was also found in the series of related ternary systems (so-called 122 phases) such as Cs_xFe_2?ySe₂, Rb_xFe_2?ySe₂, (TlK)_xFe_ySe₂, and (TlRb)_xFe_ySe₂, which formed a new group of superconducting iron-based materials without toxic As. In this paper the recent progress in synthesis of 122-like iron–selenide systems and in experimental research of their properties is reviewed. Available theoretical data on electronic, magnetic, and elastic properties of this newest group of superconducting materials are also discussed.     

A co-doping approach towards enhanced ionic conductivity in fluorite-based electrolytes

A co-dopant strategy is used to investigate the effect that the elastic strain in the lattice has on the grain ionic conductivity of doped ceria electrolytes. Based on critical dopant ionic radius (r_c), different compositions in the Lu_xNd_yCe_1−x−yO_2−δ (x + y = 0.05, 0.10, 0.15, and 0.20) system are studied. Dopants are added such that the weighted average dopant ionic radius matches r_c for all the compositions. Dense ceramic discs are prepared using conventional solid oxide route and sintering methods. Precise lattice parameter measurements are used to calculate the lattice strain. The ionic conductivity of the samples is measured in the temperature range of 250 °C to 700 °C using two-probe electrochemical impedance spectroscopy technique. The elastic strain present in Lu_xNd_yCe_1−x−yO_2−δ system is found to be negligible when compared to Lu_xCe_1−xO_2−δ (negative) and Nd_xCe_1−xO_2−δ (positive) systems. Grain ionic conductivity of Lu_xNd_yCe_1−x−yO_2−δ (where x + y = 0.05) at 500 °C is observed to be 1.9 × 10^− 3 S/cm which is twice as high as that of Lu_0.05Ce_0.95O_2−δ. These results extend the validity of the r_c concept as a strategy for co-doping ceria electrolytes and open new designing avenues for solid oxide electrolytes with enhanced ionic conductivity.     

Magneto-oscillations in a trapezoidal two-dimensional electron gas grown over GaAs wires

In this work we investigate a nonplanar two-dimensional electron gas (2DEG) that allows study of the electronic behaviour in random and sign-alternating magnetic fields. Shubnikov–de Haas oscillations were studied by measuring the magnetoresistance at different angles φ between the field and the substrate. We find that at low magnetic field the position of the oscillation peaks followsB_p ∼ Bsin (φ − θ), where θ is the angle between the field and the facets that effectively contribute to magnetoresistance. This is due to the fact that electrons follow different paths depending on the realization of a specific magnetic field.     

The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(1 1 1) substrates by MOCVD

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(1 1 1) substrates by metal–organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown on Si(1 1 1) under various conditions and characterized by Nomarski microscopy (NM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), and room temperature (RT) photoluminescence (PL) measurements. Firstly, we optimized LT-AlN/HT-AlN/Si(1 1 1) templates and graded AlGaN intermediate layers thicknesses. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.2 μm. Secondly, the effect of in situ substrate nitridation and the insertion of an Si_xN_y intermediate layer on the GaN crystalline quality was investigated. Our measurements show that the nitridation position greatly influences the surface morphology and PL and XRD spectra of GaN grown atop the Si_xN_y layer. The X-ray diffraction and PL measurements results confirmed that the single-crystalline wurtzite GaN was successfully grown in samples A (without Si_xN_y layer) and B (with Si_xN_y layer on Si(1 1 1)). The resulting GaN film surfaces were flat, mirror-like, and crack-free. The full-width-at-half maximum (FWHM) of the X-ray rocking curve for (0 0 0 2) diffraction from the GaN epilayer of the sample B in ω-scan was 492 arcsec. The PL spectrum at room temperature showed that the GaN epilayer had a light emission at a wavelength of 365 nm with a FWHM of 6.6 nm (33.2 meV). In sample B, the insertion of a Si_xN_y intermediate layer significantly improved the optical and structural properties. In sample C (with Si_xN_y layer on Al_0.11Ga_0.89N interlayer). The in situ depositing of the, however, we did not obtain any improvements in the optical or structural properties.