Neutron diffraction study of the CeFeSi-type RTiGe compounds (R=Pr,Nd, Tb–Er)

Neutron diffraction experiments were carried out on polycrystalline RTiGe (R=Pr, Nd, Tb–Er) samples. These compounds crystallise with the tetragonal CeFeSi-type structure (space group P4/nmm). This structure is closely related to the ThCr₂Si₂-type and can be described as “BaAl₄ blocks” connected via R–R contacts (“W blocks”). All the compounds are antiferromagnetic. PrTiGe and NdTiGe are characterised by an easy-plane sine-modulated structure characterised by a wave vector k=0,0,q_z=0.242 and 0.334 below 62 and 128 K, respectively. Below 80 K, NdTiGe exhibits a commensurate arrangement, which consists on ferromagnetic (0 0 1) Nd layers coupled antiferromagnetically along the c direction with the sequence ++−−. This commensurate magnetic ordering also occurs in TbTiGe, DyTiGe, HoTiGe and ErTiGe below 312, 185, 124 and 36 K, respectively. In the first three compounds (R=Tb−Ho), the magnetic moment is aligned along the c-axis whereas it is localised in the basal plane in ErTiGe. In all the RTiGe compounds, the magnitude of the ordered moments at 2 K amounts nearly to the free ion magnetic moment (gJ) values for the respective R³⁺ ions.     

Strain-dependent electronic and magnetic of Co-doped monolayer of WSe2

We perform first-principles calculation to investigate electronic and magnetic properties of Co-doped WSe₂ monolayer with strains from −10% to 10%. We find that Co can induce magnetic moment about 0.894 μ_B, the Co-doped WSe₂ monolayer is a magnetic semiconductor material without strain. The doped system shows half-metallic properties under tensile strain, and the largest half-metal gap is 0.147 eV at 8% strain. The magnetic moment (0.894 μ_B) increases slightly from 0% to 6%, and jumps into about 3 μ_B at 8% and 10%, which presents high-spin state configurations. When we applied compressive strain, the doped system shows a half-metallic feature at −2% strain, and the magnetic moment jumps into 1.623 μ_B at −4% strain, almost two times as the original moment 0.894 μ_B at 0% strain. The magnetic moment vanishes at −7% strain. The Co-doped WSe₂ can endure strain from −6% to 10%. Strain changes the redistribution of charges and magnetic moment. Our calculation results show that the Co-doped WSe₂ monolayer can transform from magnetic semiconductor to half-metallic material under strain.     

Magnetization anisotropy of the Tm- and Fe-subsystems in Tm2Fe17

Magnetic and neutron diffraction measurements were carried out in order to study the spontaneous and induced spin-reorientation (SR) transition of the “easy axis–easy plane” type in the poly and single-crystalline samples of the hexagonal Tm₂Fe₁₇. We have determined the temperature dependence of the lattice parameters and the angle between the c-axis and the magnetic moment of the Tm-subsystem. We also find that the SR transition is accompanied by a large (about 20%) magnetization change of the Tm subsystem. In order to induce such a SR transition with the external magnetic field, μ₀H_cr=5 T is necessary to be applied along the hard-magnetization direction (the a-axis) at 4.2 K. The H_cr value decreases with an increasing temperature. The magnetization measurements demonstrate that at 10 K the saturation magnetization along the easy-magnetization direction (the c-axis) is smaller than that along the hard-magnetization direction. Based on this observation, we believe that Fe-subsystem of Tm₂Fe₁₇ is likely to have magnetization anisotropy.     

Neutron studies of the iron-based family of high TC magnetic superconductors

We review neutron scattering investigations of the crystal structures, magnetic structures, and spin dynamics of the iron-based RFe(As, P)(O, F) (R = La, Ce, Pr, Nd), (Ba,Sr,Ca)Fe₂As₂, and Fe_1+x(Te–Se) systems. On cooling from room temperature all the undoped materials exhibit universal behavior, where a tetragonal-to-orthorhombic/monoclinic structural transition occurs, below which the systems become antiferromagnets. For the first two classes of materials the magnetic structure within the a–b plane consists of chains of parallel Fe spins that are coupled antiferromagnetically in the orthogonal direction, with an ordered moment typically less than one Bohr magneton. Hence these are itinerant electron magnets, with a spin structure that is consistent with Fermi-surface nesting and a very energetic spin wave bandwidth ～0.2 eV. With doping, the structural and magnetic transitions are suppressed in favor of superconductivity, with superconducting transition temperatures up to ≈55 K. Magnetic correlations are observed in the superconducting regime, with a magnetic resonance that follows the superconducting order parameter just like the cuprates. The rare earth moments order antiferromagnetically at low T like ‘conventional’ magnetic superconductors, while the Ce crystal field linewidths are affected when superconductivity sets in. The application of pressure in CaFe₂As₂ transforms the system from a magnetically ordered orthorhombic material to a ‘collapsed’ non-magnetic tetragonal system. Tetragonal Fe_1+xTe transforms to a low T monoclinic structure at small x that changes to orthorhombic at larger x, which is accompanied by a crossover from commensurate to incommensurate magnetic order. Se doping suppresses the magnetic order, while incommensurate magnetic correlations are observed in the superconducting regime.     

Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 〈1 0 0〉 cubic and [−1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.     

Structural and magnetic properties of the double perovskite Sr2MnWO6

The nuclear and magnetic structure and the magnetic properties of the polycrystalline double perovskite Sr₂MnWO₆ have been studied. Rietveld analysis of neutron powder diffraction (NPD) data at T=295 K shows that the sample is tetragonal (space group P4₂/n, a=8.0119(4) Å, c=8.0141(8) Å). Some additional magnetic diffraction peaks were found in the NPD pattern at 10 K, which can be accounted for by antiferromagnetic ordering of spins at the Mn sites. The magnetic unit cell is doubled in all three unit axes directions (a=b=15.9984(8) Å, c=16.012(2) Å) and the manganese moments are coupled antiferromagnetically along the unit cell axes. The total magnetic moment of Mn²⁺ is found to be 2.27(7) μ_B. The antiferromagnetic behaviour was confirmed from magnetisation measurements. The transition from a paramagnetic to an antiferromagnetic state takes place at 13.0±0.1 K.     

Large magnetocaloric effect in HoFeO3 single crystal

Magnetocaloric properties of HoFeO₃ single crystal are investigated along the direction [100]. Magnetic field dependent magnetization isotherms at different temperatures undergo a metamagnetic transition, entropy change as large as 19.2 J/kg K and 15.8 J/kg K are obtained at 7 T in the vicinity of antiferromagnetic ordering temperature of Ho³⁺ and the metamagnetic transition, respectively. The coupling of Ho and Fe spins generates the compensation behavior at 6.5 K, separating the two large magnetic entropy change. Its refrigeration capacity (RC) value, as high as 220 J/kg, is appreciable and can be considered as a promising magnetic refrigerant. New evidence for spin reorientation of Fe³⁺ in HoFeO₃ is also provided by the change of magnetic entropy.     

Common fingerprint of hydroxylated non-polar steps on MgO smoke and MgO films

The infrared spectra of MgO smoke exposed to water are compared to high-resolution electron energy loss spectra (HREELS) of hydroxylated ultrathin MgO(1 0 0)/Ag(1 0 0) films. Very similar bands are observed at 3458–3480 cm^?1 and 3710–3714 cm^?1. On the basis of first principle calculations, these bands are interpreted as the stretching modes of the two distinct OH groups that are formed at monatomic steps parallel to 〈1 0 0〉 crystallographic directions. The lower frequency band is due to H adsorbed on O at the step edge, while the higher frequency one originates from OH groups that are twofold coordinated with Mg. Consistently, scanning tunnelling microscopy images of MgO films, prepared in similar conditions as during the HREELS experiments, show that the MgO/Ag(1 0 0) island edges are mainly non-polar, i.e. oriented along the 〈1 0 0〉 direction. In spite of that, a minor contribution to the OH-stretch intensity from hydroxylated polar 〈1 1 0〉 steps cannot be excluded; for such geometry density functional theory predicts indeed a single OH species with a vibrational frequency very close to the high-frequency band of OH adsorbed at 〈1 0 0〉 steps.     

Complex magnetism in a new alloy,Eu2PdSi3, with two crystallographically inequivalent sites

Lattice constants, electrical resistivity, heat capacity, AC and DC magnetic susceptibility and ¹⁵¹Eu Mössbauer effect studies on a new intermetallic compound, Eu₂PdSi₃, found to crystallize in an AlB₂-derived hexagonal crystal structure, are reported. The results establish that the Eu ions are in the divalent state down to low temperatures, undergoing two magnetic transitions, one at 40 K and the other at 10 K, pertaining to two different Eu sites. Interestingly, the minority Eu ions at the 2(b) sites order at a relatively high temperature (40 K) and this magnetic interaction is inferred to be ferromagnetic and quasi one-dimensional along the c-axis. The magnetic structure below 5 K following magnetic ordering (at 10 K) of the majority ions at 6(h) sites appears to be quite complex. In short, the crystallographic and (hence) the overall magnetic behaviors of this compound present an interesting situation.     

Tuning magnetism of monolayer GaN by vacancy and nonmagnetic chemical doping

In view of important role of inducing and manipulating the magnetism in 2D materials for the development of low-dimensional spintronic devices, the magnetism of GaN monolayer with Ga vacancy and nonmagnetic chemical doping are investigated using first-principles calculations. It is found that pure GaN monolayer has graphene-like structure and is nonmagnetic. While, a neutral Ga vacancy can induce 3 μ_B intrinsic magnetic moment, localized mainly on the neighboring N atoms. Interestingly, after one Mg or Si atom doping in g-GaN with Ga vacancy, the magnetic moment can be modified to 4 μ_B or 2 μ_B respectively due to the change in hole number. Meantime, Mg-doped g-GaN with Ga vacancy shows half-metal character. With the increasing of doping concentrations, the magnetic moment can be further tuned. The results are interesting from a theoretical point of view and may open opportunities for these 2D GaN based materials in magnetic devices.     

Uniaxial pressure effect on magnetic susceptibility of perovskite manganite La0.66Ba0.34MnO3

Magnetization of La_0.66Ba_0.34MnO₃ and its temperature behavior under a uniaxial pressure of 0.1 kbar are measured between 5 and 270 K in magnetic fields 0<H<120 Oe. The magnetization represents nearly linear dependence on an external magnetic field. Temperature dependence of the magnetic susceptibility found represents a plateau, that is considered as an evidence of the formation of a long period magnetic structure (probably a sort of helix) below the Curie point. Pressure derivative of magnetization displays a sharp minimum at 200 K, pointing to an instability of electronic structure of the compound near this temperature.     

Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films

In this investigation the composite SiO_x〈Ti〉 films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO₂) and Тi powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiO_x〈Ti〉 layers with resistance (for monopixel of 0.8 × 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to −2.22% K⁻¹. IR spectrum of SiO_x〈Ti〉 film is characterized by a broad absorption band in the range of 8–12 μm which is associated with the Si–O–Si stretching mode.Investigations of the effect of gamma irradiation on SiO_x〈Ti〉 films have shown that their temperature-sensitive properties, in particular TCR does not change up to a dose of 10⁶ Gy.These results suggest that SiO_x〈Ti〉 films can be used as materials for production of radiation-resistant thermosensitive detectors operated in radiation fields of γ-radiation and combining functions of IR-absorption and formation of an electric signal.     

Geometric and magnetic properties of Co/Pd system

We measured geometric and magnetic properties of Co films on the Pd(1 1 1) surface by X-ray photoelectron diffraction (XPD), X-ray magnetic circular dichroism (MCD) at the Co L_2,3 edge, and the surface magneto-optical Kerr effect (SMOKE) measurements. Co thin films are found to grow incoherently with fcc island structure on the smooth Pd(1 1 1) substrate. Comparison of MCD and SMOKE measurements of Co thin films grown on rough and smooth Pd(1 1 1) surfaces suggests that perpendicular remnant magnetization and Co orbital moment are enhanced by the rough interface. Pd capping layer also induces perpendicular orbital moment enhancement. These observations indicate the influence of hybridization between Co 3d and Pd 4d at the interface on the magnetic anisotropy.     

Antiferromagnetism of ThCr2Si2

Neutron diffraction measurements indicate that the magnetic moments of chromium atoms in the ThCr₂Si₂ compound show long-range order. The Cr magnetic moment equal to 1.20(25)μ_B at 1.5 K lie in the basal plane and form magnetic structure AFl-type.     

Magnetic and electrical properties of Gd7Rh3 single crystal

Magnetic and electrical properties of hexagonal Gd₇Rh₃ single crystals have been studied by measuring magnetization, magnetic susceptibility, and electrical resistivity. Gd₇Rh₃ shows antiferromagnetic order below T_N=141 K as reported by Loebich et al; magnetic anisotropy is small in paramagnetic region. Metamagnetic transitions were observed at 4 K in the external magnetic field up to 130 kOe along the c-axis and in the c-plane. Electrical resistivity shows a characteristic hump just below T_N due to the super-zone gap formation along the new Brillouin zone boundaries. High-temperature resistivity indicates that Gd₇Rh₃ has a semi-metallic band structure; the band gap energy 4.9 meV was obtained.     

Band overlap via chemical pressure control in double perovskite (Sr2−xCax)FeMoO6 (0 ⩽ x ⩽ 2.0) with TMR effect

The chemical pressure control in (Sr_2−xCa_x)FeMoO₆ (0 ⩽ x ⩽ 2.0) with double perovskite structure has been investigated systematically. We have performed first-principles total energy and electronic structure calculations for x = 0 and x = 2.0. The increasing Ca content in (Sr_2−xCa_x)FeMoO₆ samples increases the magnetic moment close to the theoretical value due to reduction of Fe/Mo anti-site disorder. An increasing Ca content results in increasing (Fe²⁺ + Mo⁶⁺)/(Fe³⁺ + Mo⁵⁺) band overlap rather than bandwidth changes. This is explained from simple ionic size arguments and is supported by X-ray absorption near edge structure (XANES) spectra and band structure calculations.     

Magnetostriction of Tb–Dy–Fe alloy with different crystal axes orientation

Based on the principle of energy minimum, magnetostriction of Tb–Dy–Fe alloy with different crystal axes under different compressive stress has been calculated using a three-dimensional anisotropy domain rotation model. Simulated results show that the magnetostriction property of 〈1 1 1〉-oriented single crystal is the best; saturation magnetostriction up to 2378 ppm has been obtained under compressive prestress of 24 MPa, which is very close to the experiment results. Saturation magnetostriction properties of 〈1 1 2〉-oriented and 〈1 1 0〉-oriented single crystal are very close under lower compressive prestress, while the 〈1 1 0〉-oriented ones have higher magnetostriction than 〈1 1 2〉-oriented ones under higher compressive prestress. In lower magnetic field, 〈1 1 0〉-oriented crystals achieve jump effect (1018 ppm at 715 Oe under 10 MPa) prior to 〈1 1 2〉-oriented ones, which indicates that it has fairly better low-magnetic field properties. These results agree well with the experimental results in previous literatures.     

Quantum dots of Cd0.5Mn0.5Te semimagnetic semiconductor formed by the cold isostatic pressure method

Cd_0.5Mn_0.5Te is a semimagnetic semiconductor, which crystallizes in the zinc-blende structure (ZB) and exhibits a magnetic spin glass like transition at 21 K. Under pressure it shows a first-order phase transition around 2.6 GPa to the NaCl like structure. In this work, the pressure cycled method using a Paris–Edinburgh cell up to 8 GPa has been applied to Cd_0.5Mn_0.5Te samples in order to obtain recovered nanocrystals. The nanoparticles have been characterized by EDX and electron microscopy. The X-ray and electron diffraction results confirmed the existence of nanocrystals in the ZB phase with an average size of 7 nm. Magnetization measurements made in the range of 2–300 K at low field show that the temperature of the magnetic transition decreases when the crystallites’ size is reduced.     

Magnetic structure of the ternary germanide Ce3Ni2Ge7

The ternary germanide Ce₃Ni₂Ge₇ has been studied by means of neutron powder diffraction and Ce L_III X-ray absorption (XAS). This compound which orders antiferromagnetically below T_N=7.2(2) K, crystallizes in the orthorhombic (Cmmm space group) La₃Co₂Sn₇-type structure where Ce atoms occupying two inequivalent crystallographic sites: Ce1 at 2d site and Ce2 at 4i site. Below T_N, the antiferromagnetic structure of Ce₃Ni₂Ge₇ is collinear but only the Ce2 atoms carry a magnetic moment (1.98(2) μ_B at 1.4 K). The absence of ordered magnetic moment on Ce1 atoms can be correlated to the average valence v=3.03(1), determined by X-ray absorption spectroscopy, suggesting an intermediate valence state of cerium in the 2d site.     

Pressure effect on magnetic properties of RCo12B6 (R=Y,Ce) compounds

The effect of pressure on magnetic properties of YCo₁₂B₆ and CeCo₁₂B₆ was studied in temperature range 5–300 K at pressures up to 9 kbar. The Curie temperature T_C and spontaneous magnetization M_S decrease with pressure for both compounds. The decrease can be attributed mostly to the volume dependence of both, the Co magnetic moment and the exchange interactions. The hybridization of the p–d states as a consequence of small distances between the Co and B atoms can be one reason of the relatively low pressure effects (ΔT_C/Δp=?0.39±0.02 K/kbar, d ln M_S/dp=?0.0013±0.0002 kbar^?1) in YCo₁₂B₆. Higher volume sensitivity of magnetic properties of CeCo₁₂B₆ in comparison with YCo₁₂B₆ can be attributed to the pressure induced changes of the Ce f- and Co d-states.