Strong photoluminescence anisotropy in porous silicon layers prepared by polarized-light assisted anodization

Linearly-polarized infrared (1.06 μm) laser light with intensities ranging from 5.3 to 97 mW/cm² has been used to obtain anisotropically luminescent porous silicon (PSi) layers by photoanodic etching in a hydrofluoric acid solution. Remarkably large photoluminescence (PL) anisotropy has been observed in samples prepared with the highest illumination intensity. These samples show very low degrees of linear polarization when the PL excitation light is polarized parallel to the polarization direction of the etching light. When the excitation light is polarized perpendicular to that, we obtain usual degrees of linear polarization of several percent. This result indicates that anisotropic Si nanostructures in PSi layers can be made isotropic with high orientation selectivity by the polarized-light assisted technique. A simple two-dimensional model is presented to explain the observed prominent anisotropy.     

Porous Silicon as an Intermediate Buffer Layer for Zinc Oxide Nanorods

Zinc thin films were deposited onto porous silicon (PSi) substrates by dc sputtering using a Zn target. These films were then annealed under flowing (6 l/min) oxygen gas environment in the furnace at 600°C for 2 h. Porous silicon is used as an intermediate layer between silicon and ZnO films and it provides a large area composed of an array of voids. The PSi samples were prepared using photoelectrochemical method on n-type silicon wafer with (111) and (100) orientation. To prepare porous structures, the samples were dipped into a mixture of HF:ethanol (1:1) for 5 min with current densities of 50 mA/cm², and subjected to external illumination with a 500 W UV lamp. The surface morphology and the nanorod structure of the ZnO films were characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD). We synthesized the ZnO nanorods with diameter of 80–100 nm without any catalysts or templates. The XRD pattern confirmed that the ZnO nanorods were of polycrystalline structure. The surface-related optical properties have been investigated by photoluminescence (PL) and Raman measurements at room temperature. Micro-Raman results showed that A₁(LO) of hexagonal ZnO/Si(111) and ZnO/Si(100) have been observed at 522 cm^–1 and 530 cm^–1, respectively. PL spectra peaks are clearly visible at 366 cm^–1 and 368 cm^–1 for ZnO film grown on porous Si(111) and Si(100) substrates, respectively. The PL spectral peak position in ZnO nanorods on porous silicon is blue-shifted with respect to that in unstrained ZnO (381 nm).     

Photoluminescence spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532-nm laser radiation and gamma-rays

We have investigated temporal behavior of the photoluminescence (PL) spectra of thin films containing CdSe/ZnS quantum dots irradiated by 532 nm laser radiation and gamma-rays. Under ∼100 W/cm² laser radiation, the PL intensity (I_PL) increases with irradiation time upto about 500 s and thereafter declines linearly. The wavelength of the PL emission (λ_peak) exhibits a blue-shift with exposure time. Upon simultaneous irradiation by 100 W/cm² 532-nm laser, as well as 0.57 and 1.06 MeV gamma-rays, the temporal behaviors of both I_PL and λ_peak are significantly different; I_PL increases to a saturation level, and the magnitude of the blue-shift in λ_peak is reduced. We discuss possible mechanisms underlying these results.     

Effects of thermal oxidation on the photoluminescence properties of porous silicon

The effects of thermal oxidation on the photoluminescence (PL) properties of powdered porous silicon (PSi) are studied using X-ray photoelectron spectroscopy (XPS). It is found that the PL intensity is steeply quenched after annealing at and recovered at above . The XPS intensity of oxides formed on the PSi surface is also found to strongly depend on the annealing temperature. The comparison between the annealing temperature dependence of PL intensity and that of the oxide XPS intensity suggests that the formation of thin disordered SiO₂ layer accompanies the quenching of the PL intensity, and that the formation of thick high-quality SiO₂ layer results in the PL intensity recovery. These results indicate that the thickness and quality of SiO₂ layer play a crucial role in the PL properties of thermally oxidized PSi.     

Development and Investigation of Ultrastable PbS/CdS/ZnS Quantum Dots for Near‐Infrared Tumor Imaging

Achieving bright, reliable, robust, and stable probes for in vivo imaging is becoming extremely urgent for the cancer imaging research community. To date very few works have reported on elucidating in the varied and chemically complex biological milieu. The authors report detailed investigations of the synthesis of near‐infrared, water dispersive, strongly luminescent, and highly stable PbS/CdS/ZnS core/shell/shell quantum dots (QDs). These QDs are extremely stable, they could keep their initial morphology, dispersion status, and photoluminescence (PL) in phosphate buffered saline buffer for as long as 14 months. The QDs also show excellent photostability and could keep ≈80% of their initial PL intensity after 1 h continuous, strong UV illumination. More interestingly, they show negligible toxicity to cultured cells even at high QDs concentration. Given these outstanding properties, the QDs are explored for in vivo, tumor imaging in mice. With one order of magnitude lower QD concentration (0.04 mg mL^–1), significantly weaker laser intensity (0.04 W cm^–2 vs ≈1 W cm^–2), and considerably shorter signal integration time (≤1 ms vs hundreds of ms) as compared to the best reported rare earth doped nanoparticles, the QDs show high emission intensity even at injection depth of ≈2.5 mm.     

Quenching kinetics and small signal gain spectrum of the ZnI photodissociation laser

By photodissociation ZnI₂ with 193 nm (ArF) laser radiation, the rate constants for quenching of the upper and lower energy levels of the ZnI (B → X) laser by ZnI₂ have been measured to be (1.7 ± 0.2) × 10^-9 and (1.4 ± 0.4) × 10^-9 cm³ s^-1, respectively. Although the former rate constant was found to be laser intensity-dependent for I ? 10⁵ W cm^-2, the ZnI(B) state radiative lifetime was determined to be 26 ± 4 ns. Also, the small signal gain coefficient, g₀, of this molecular laser has a peak value of ? 15% cm^-1 at λ ? 602 nm and exceeds 5% cm^-1 for 591 nm ≤ λ ≤ 608 nm for a potential tuning range of at least 170 Å.     

Preparation of Y2O3:Eu thin films by excimer-laser-assisted metal organic deposition

Europium-doped yttrium oxide (Y₂O₃:Eu) thin films were successfully deposited on quartz and ITO/glass substrates by excimer-laser-assisted metal organic deposition (ELAMOD) at low temperatures. The effects of laser wavelength and thermal temperature on the films’ crystallinity and photoluminescence properties were investigated. Films irradiated by an ArF laser at 80 mJ/cm² and 400–500°C were highly crystallized compared with those prepared by thermal MOD. In contrast, when the film was irradiated by a KrF laser at 500°C, no crystalline Y₂O₃:Eu was formed. The Y₂O₃:Eu film irradiated by the ArF laser at 80 mJ/cm² and 500°C showed typical PL spectra of Eu³⁺ ions with cubic symmetry and a ⁵D₀→⁷F₂ transition at ∼612 nm. The PL intensity at 612 nm was much higher for the film prepared with ELAMOD than for that prepared by the thermal-assisted process, and the photoemission intensity of the film prepared with ELAMOD strongly depended on the substrate material.     

Resonance Excitation of Photoluminescence in Crystalline Uranyl Acetate Dihydrate

A method for rapid identification of uranyl compounds based on resonance fiber-optic photoluminescence (PL) excitation by ultraviolet-laser or LED radiation is proposed. This method was used to measure the PL spectra of an extremely small volume (10^–9 cm³) of crystalline uranyl acetate dehydrate UO₂(CH₃COO)₂ ? 2H₂O with an exposure of 10^–3 s. Semiconductor LEDs with wavelengths of 369, 385, 410, and 466 nm and a repetitively pulsed nitrogen laser with a lasing wavelength of 337 nm served as sources of excitation radiation. The operating range of a small-sized minispectrometer used in these experiments was 200–1000 nm.     

Preparation and photoluminescent properties of Ni-doped ZrO2 fibers

Ni²⁺-doped ZrO₂ precursor fibers were prepared via sol-gel technique by dry-spinning method and then heat-treated at different temperatures. The surface of the fibers is smooth with uniform diameter and no cracks have been observed by scanning electron microscopy (SEM). The emission intensity reaches a maximum value at 1 mol% Ni²⁺ because of the concentration quenching. The photoluminescence (PL) relative intensity is apparently intensifying with increasing temperature before 700 °C due to the crystallinity of the ZrO₂ lattice improvement. The PL results show that the typical emission center is at 510 nm excited at 315 nm.     

LD抽运Yb:GSO实现1090 nm低阈值激光运转

用Yb:Gd₂SiO₅(Yb:GSO)晶体实现激光运转.利用940 nm的二极管激光器作为抽运源，得到Yb:GSO激光器的激光中心波长为1090 nm，抽运阈值功率密度仅为1.27 kW/cm²，小于Yb:YAG的理论阈值1.53 kW/cm².利用2%的输出镜得到最大输出功率为360 mW，相应的斜效率为19%. 关键词： Yb:GSO晶体 激光二极管抽运 阈值     

Surface characterization and luminescent properties of SrAl2O4:Eu,Dy nano thin films

SrAl₂O₄:Eu²⁺, Dy³⁺ thin films were grown on Si (1 0 0) substrates in different atmospheres using the pulsed laser deposition (PLD) technique. The effects of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological and photoluminescence (PL) properties of the films were investigated. The films were ablated using a 248 nm KrF excimer laser. Improved PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres compared to those prepared in vacuum. A stable green emission peak at 520 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions was obtained. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The diffusion of adventitious C into the nanostructured layers deposited in the Ar and O₂ atmospheres was most probably responsible for the quenching of the PL intensity after annealing.     

Ionoluminescence and photoluminescence studies of Ag ion irradiated kyanite

Ionoluminescence (IL) of kyanite single crystals bombarded with 100 MeV swift Ag⁸⁺ ions with fluences in the range 1.87-7.5×10¹¹ ions/cm² has been studied. A pair of sharp IL peaks at ∼689 and 706 nm along with broad emission in the region 710-800 nm are recorded in both crystalline and pelletized samples. Similar results are recorded in Photoluminescence (PL) of pelletized kyanite bombarded with same ions and energy with fluences in the range 1×10¹¹-5×10¹³ ions/cm² with an excitation of 442 nm laser beam. The characteristic pair of sharp emission peaks at 689 and 706 nm in both IL and PL is attributed to luminescence centers activated by Fe²⁺ and Fe³⁺ ions. The reduction in IL and PL bands intensity with increase of ion fluence might be attributed to degradation of Si-O (2ν₃) bonds, present on the surface of the sample.     

Synthesis and photoluminescence of CeO2:Eu phosphor powders

The crystalline structure and photoluminescence (PL) properties of europium-doped cerium dioxide synthesized by the solid-state reaction method were analyzed. CeO₂:Eu³⁺ phosphor powders exhibit the pure cubic fluorite phase up to 10 mol% doping concentration of Eu³⁺. With indirect excitation of CeO₂ host at 373 nm, the PL intensity quickly increases with increasing Eu³⁺ concentration, up to about 1 mol%, and then decreases indicating the concentration quenching. While with direct excitation (467 nm), much more stronger PL emissions, especially the electric dipole emission ⁵D₀-⁷F₂ at 612 nm, are observed and no concentration quenching occurs up to 10 mol% doping concentration of Eu³⁺. The nature of this behavior and the cause of the concentration quenching were discussed.     

Nitrogen atom detection in low-pressure flames by two-photon laser-excited fluorescence

Nitrogen atoms have been detected in stoichiometric flat premixed H₂/O₂/N₂ flames at 33 and 96 mbar doped with small amounts of NH₃, HCN, and (CN)₂ using two-photon laser excitation at 211 nm and fluorescence detection around 870 nm. The shape of the fluorescence intensity profiles versus height above the burner surface is markedly different for the different additives. Using measured quenching rate coefficients and calibrating with the aid of known N-atom concentrations in a discharge flow reactor, peak N-atom concentrations in these flames are estimated to be on the order of 10¹²–5×10¹³ cm^–3; the detection limit is about 1×10¹¹ cm^–3.     

Effects of electron tunneling in photophysics of quantum-sized luminescent nanosilicon

The paper deals with the processes of photoburning and dark recovery of the photoluminescence (PL) yield of a “core-shell”-type hybrid nanoparticles Si/SiO _x (npSi/SiO _x ) after exposure to laser light with a wavelength of 405 nm and power density of 0.05–1 W/cm². The PL of npSi/SiO _x occurs after excitation of nanocrystalline Si core and subsequent energy transfer to the luminescent oxygen-deficient centers (ODC) in the SiO _x shell of a nanoparticle. These photoburning effects linearly depend on the power density of the exciting laser light, and the dynamics of the photoburning of PL is significantly non-exponential: the burning rate strongly drops during the exposure. The stop of laser exposure of npSi/SiO _x is accompanied by a slow dark recovery of the quantum efficiency of PL up to its initial level. We have demonstrated the possibility of controlling the photosensibility of npSi/SiO _x through changing the electron affinity of the environment. We have also proposed a physical mechanism that explains the observed photoburning and subsequent dark recovery of npSi/SiO _x PL based on the existence of “traps” for electrons residing in the SiO _x shell, where the electrons come as a result of tunneling from the excited ODC. The limiting time for this process is the lifetime of PL of ODC ranging from 10^?5 to 10^?4 s. The drop of the burning rate during exposure is caused by a strong difference in tunneling probabilities for different pairs of “ODC-trap”. The dark back tunneling of an electron from a trap to the original ODC occurs significantly (7–10 orders of magnitude) slower than the direct tunneling due to higher energy barrier.

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Graphical abstract Dark recovery of photoluminescence efficiency of Si nanoparticles following laser burning in three surrounding media differing in electron affinity

     

Excimer ArF laser with an output energy of 1.3 J at 2.0% efficiency on the He:Ar:F2 mixture

In this paper it is shown that to achieve a maximum efficiency and high output energy of an ArF (193 nm) excimer laser, one should use optimal pump intensity. It has been shown experimentally that the optimal pump intensity for an ArF excimer laser with the mixture of He:Ar:F₂ has a value of 4.5–5.0 MW/cm³. The results of an experimental study of the pump and active medium parameters effect on the efficiency and output energy of the ArF excimer laser on the mixture of He:Ar:F₂ are presented. To provide high pump intensity of an active medium, the excitation scheme of the LC-inverter type has been used where the current return conductor inductance had been increased from 30 to 80 nH. This allows the pump to achieve levels of intensity above 5.0 MW/cm³. By using the pump intensity of 5.0 MW/cm³ in an active medium of He:Ar:F₂–79.7:20:0.3 at total pressure of 2.4 atm, we are the first to obtain the output energy of 1.3 J at the total efficiency of 2.0%. The pulse duration (FWHM) was 15±1 ns and the peak pulse power was 85 MW. PACS 42.55.Lt; 42.60.Lh     

Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence

In order to observe the effect of intra-band gap excitation on the photoluminescence (PL) properties of undoped InP and iron doped InP (InP:Fe), PL measurements were performed in InP crystals with thickness of 360 μm and area of about 4×3 mm², grown by the liquid encapsulated Czochralski (LEC) technique upon excitation with both Ar-ion laser and 980 nm light. The PL intensities for InP:Fe under 980 nm wavelength light illumination relative to no illumination increased by about 52%, 33%, and 12% for the 1.337, 1.380, and 1.416 eV peaks, respectively, at 10 K, whereas there was no illumination effect for undoped InP. This is a strong indication that Fe centers play a role as non-radiative recombination centers to decrease the PL intensity. PL experiments were performed in the spectral range of 1320-1440 meV for InP in the sample temperature range of 10-160 K. The electron and hole photoionization cross-sections at 980 nm wavelength light illumination were calculated as and , respectively.     

Power optimization of a Tl photodissociation laser

Conditions for the operation of a Tl photodissociation laser, in view of power optimization, have been determined. A crucial parameter is found to be quenching of the upper laser level. A value for the quenching cross-section of the 7² S _1/2 Tl state by the TlI molecules of 2×10^–14 cm² has been measured.     

Visible photoluminescence from hydrogenated amorphous carbon films prepared by pulsed laser ablation of polymethyl methacrylate (PMMA)

Visible photoluminescence (PL) has been observed from the hydrogenated amorphous carbon (a-C:H) films prepared by ArF pulsed laser ablation of polymethyl methacrylate (PMMA) in the presence of hydrogen gas (H₂). With increasing hydrogen concentration the PL intensity increases and the intensity maximum blue-shifted. The PL intensity also increases after hours of light illumination, exhibiting a light soaking enhancement. Increasing the deposition temperature decreases the PL and increases the ratio of sp³/sp² bonds.Z.F. Li is on leave from Department of Physics, Nanjing University, Nanjing 210093, P.R. China.     

Nonlinear laser ablation from solid rare-gas films

Optical breakdown on Ar films is studied in an intensity range from 10⁶ to 2 × 10⁹ W/cm² for wavelengths of 228, 281 and 282.8 nm. The amount of ablated H₂O, N₂, O₂ and Ar increases quadratically with laser intensity and depends strongly on the exposure time to residual gas and on substrate temperature around 24 K. The results can be explained by a model which assumes that the dominant process causing ablation is the heating of a condensed residual gas layer by two-photon absorption.