Planar quarter wave stacks prepared from chalcogenide Ge-Se and polymer polystyrene thin films

Planar quarter wave stacks based on amorphous chalcogenide Ge-Se alternating with polymer polystyrene (PS) thin films are reported as Bragg reflectors for near-infrared region. Chalcogenide films were prepared using a thermal evaporation (TE) while polymer films were deposited using a spin-coating technique. The film thicknesses, d∼165 nm for Ge₂₅Se₇₅ (n=2.35) and d∼250 nm for polymer film (n=1.53), were calculated to center the reflection band round 1550 nm, whose wavelengths are used in telecommunication. Optical properties of prepared multilayer stacks were determined in the range 400-2200 nm using spectral ellipsometry, optical transmission and reflection measurements. Total reflection for normal incidence of unpolarized light was observed from 1530 to 1740 nm for 8 Ge-Se+7 PS thin film stacks prepared on silicon wafer. In addition to total reflection of light with normal incidence, the omnidirectional total reflection of TE-polarized light from 8 Ge-Se+7 PS thin film stacks was observed. Reflection band maxima shifted with varying incident angles, i.e., 1420-1680 nm for 45° deflection from the normal and 1300-1630 nm for 70° deflection from the normal.     

Nanolayered multilayer coatings of CrN/CrAlN prepared by reactive DC magnetron sputtering

Single-phase CrN and CrAlN coatings were deposited on silicon and mild steel substrates using a reactive DC magnetron sputtering system. The structural characterization of the coatings was done using X-ray diffraction (XRD). The XRD data showed that both the CrN and CrAlN coatings exhibited B1 NaCl structure with a prominent reflection along (2 0 0) plane. The bonding structure of the coatings was characterized by X-ray photoelectron spectroscopy and the surface morphology of the coatings was studied using atomic force microscopy. Subsequently, nanolayered CrN/CrAlN multilayer coatings with a total thickness of approximately 1 μm were deposited on silicon substrates at different modulation wavelengths (Λ). The XRD data showed that all the multilayer coatings were textured along {2 0 0}. The CrN/CrAlN multilayer coatings exhibited a maximum nanoindentation hardness of 3125 kg/mm² at a modulation wavelength of 72 Å, whereas single layer CrN and CrAlN deposited under similar conditions exhibited hardness values of 2375 and 2800 kg/mm², respectively. Structural changes as a result of heating of the multilayer coatings in air (400-800 °C) were characterized using XRD and micro-Raman spectroscopy. The XRD data showed that the multilayer coatings were stable up to a temperature of 650 °C and peaks pertaining to Cr₂O₃ started appearing at 700 °C. These results were confirmed by micro-Raman spectroscopy. Nanoindentation measurements performed on the heat-treated coatings revealed that the multilayer coatings retained hardness as high as 2250 kg/mm² after annealing up to a temperature of 600 °C.     

Thermal annealing dependence of some optical properties of plasma-modified porous silicon

The photoluminescence and reflectance of porous silicon (PS) with and without hydrocarbon (CH_x) deposition fabricated by plasma enhanced chemical vapour deposition (PECVD) technique have been investigated. The PS samples were then, annealed at temperatures between 200 and 800 °C. The influence of thermal annealing on optical properties of the hydrocarbon layer/porous silicon/silicon structure (CH_x/PS/Si) was studied by means of photoluminescence (PL) measurements, reflectivity and ellipsometry spectroscopy. The composition of the PS surface was monitored by transmission Fourier transform infrared (FTIR) spectroscopy. Photoluminescence and reflectance measurements were carried out before and after annealing on the carbonized samples for wavelengths between 250 and 1200 nm. A reduction of the reflectance in the ultraviolet region of the spectrum was observed for the hydrocarbon deposited polished silicon samples but an opposite behaviour was found in the case of the CH_x/PS ones. From the comparison of the photoluminescence and reflectance spectra, it was found that most of the contribution of the PL in the porous silicon came from its upper interface. The PL and reflectance spectra were found to be opposite to one another. Increasing the annealing temperature reduced the PL intensity and an increase in the ultraviolet reflectance was observed. These observations, consistent with a surface dominated emission process, suggest that the surface state of the PS is the principal determinant of the PL spectrum and the PL efficiency.     

Influence of annealing temperature on structural,electrical and optical properties of WSi2

WSi₂ polycrystalline films of different thicknesses were prepared by low pressure chemical vapor deposition on silicon wafers, and their crystallization properties were studied as a function of the annealing temperature. Structural measurements were performed by X-ray diffraction, detailing for the first time the phase transition from the amorphous to the hexagonal structure at an annealing temperature 380° C and from hexagonal to tetragonal above 700° C. The electrical sheet resistance showed the same transition temperatures.Optical characterization was performed by spectroscopic ellipsometry, and the real and imaginary part of the complex refractive index were obtained as a function of the annealing temperature in the 0.25–0.9 m wavelength range. A broad optical band was found for samples annealed up to 700° C, while for higher annealing temperatures a transparency region for wavelengths greater than 0.5 m and some significant structures appear. A corresponding behavior was observed in the infrared reflectance spectra. Furthermore, it was shown that the determination of the thickness of SiO₂ grown on WSi₂ requires a multilayer model, taking into account the transparency of tetragonal WSi₂.     

Brewster’s angle method for absorption coefficient measurement of high-resistivity silicon based on CW THz laser

A simple method for measuring the absorption coefficient of low absorbing materials using CW THz laser was put forward. The method was based on transmittance measurements at the Brewster’s angle for p-polarized light, where the reflectance would be minimal, so interference caused by multiple reflections in the sample would be eliminated. Numerical simulations were carried out to evaluate errors in the proposed method. An experiment was also made to measure the absorption coefficient of high-resistivity Czochralski silicon at 118.83 μm by the method. Based on CW THz laser, the method offers a convenient way to measure the material absorption coefficient and has a low cost, so it shows promising application prospects.     

Design of broadband and broad angular Cr/C multilayer reflector for “near water window” region

Traditional periodic multilayer reflector working in the soft X-ray region should be placed at the designed incidence angle and wavelength, which is extremely difficult and complicate in practice especially for “near water window region” (4.43-6.50 nm). In this region, Ni-like-Ta laser working at the wavelength 4.48 nm provides a possible source which has caught a lot attention. In this paper, to overcome the shortcoming of the periodic structure, top-flat broad band (normal incidence) and broad angular (around quasi-Brewster angle) Cr/C non-periodic multilayer reflector have been designed for the 4.48 nm soft X-ray optical system. In the wavelength region 4.473-4.488 nm, 4.455-4.496 nm and 4.435-4.529 nm, mean theoretical normal-incidence reflectivity can get 35.0%, 24.2% and 12.6%, respectively, by the top-flat broad band reflectors. In the grazing incidence angle region 44.85-45.16°, 44.54-45.46° and 44.02-45.98°, mean s-component theoretical reflectivity at 4.48 nm can get 39.7%, 23.1% and 13.0%, respectively, by the top-flat broad angular reflectors.     

Optical properties of multilayered Period-Doubling and Rudin-Shapiro porous silicon dielectric heterostructures

To investigate the optical properties in quasi-regular porous-silicon-based dielectric Period-Doubling and Rudin-Shapiro multilayer systems, we study here the reflection of light from these structures. The Period-Doubling and Rudin-Shapiro structures are fabricated in such a way that the optical thickness of each layer is one quarter of 600 and 640 nm respectively. We find that porous silicon Period-Doubling dielectric multilayers could demonstrate the optical properties similar to the classical periodic Febry–Perot interference filters with one or multiple resonant peaks, but with an advantage of having total optical thickness much lesser than the periodic structures. Additionally, light propagation in porous silicon Rudin-Shapiro structures is investigated for the first time, both theoretically and experimentally. The reflectance spectra of the structures exhibit photonic band gaps centered at predetermined wavelengths. In both cases, numerical simulation of light transmission is performed using transfer matrix method.     

Optical diagnostics of nanoscale dielectric layers on interference films by polarization-dependent differential reflectivity

The small change in the reflectance (differential reflectance) of s- or p-polarized light from an interference film as a result of the deposition of a nanoscale insulating layer on it is investigated theoretically. Analytical relations describing the contribution of nanoscale layers to the reflectance from an interference film as function of film thickness are obtained in the long-wavelength approximation. It is shown that the utilization of interference films in reflection diagnostics through differential measurements allows a significant enhancement of the sensitivity of these techniques and also opens up new possibilities for resolving the inverse problem of determining simultaneously the optical constant and thickness of nanoscale dielectric layers.     

1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD

In this work, silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide (SRSO) matrix doped with Er³⁺ ions for different erbium and silicon concentrations have been deposited by electron-cyclotron resonance plasma-enhanced chemical-vapor-deposition (ECR-PECVD) technique. Their optical properties have been investigated by photoluminescence (PL) and reflectance spectroscopy.Room temperature emission bands centered at ∼1.54 and at 0.75 μm have been obtained for all samples. The most intense emission band at ∼1.54 μm was obtained for samples with concentrations of 0.45% and 39% for erbium and silicon, respectively. Moreover, it has been found that the broad emission band centered at ∼0.75 μm for all samples shows a very strong interference pattern related to the a specific sample structure and a high sample quality.     

Characterization and optimization of magnetron sputtered Sc/Si multilayers for extreme ultraviolet optics

Scandium/silicon multilayers have been deposited by magnetron sputtering and characterized by several techniques. Experimental peak reflectances of 0.22 and 0.37 have been measured respectively at wavelengths of 40 nm and 46 nm, for 10° incidence angle. The corresponding theoretical values for a perfect Sc/Si structure are respectively 0.38 and 0.57. In order to explain these differences between calculated and measured reflectivity, thin film and multilayer characterizations have been done. Effects of multilayer imperfections on the reflectivity have been estimated independently by means of simulation. Based on these results, a new design of Sc/Si multilayer is proposed with top layer thickness optimization. With this design, the experimental peak reflectance reaches 0.46 at a wavelength of 46 nm. PACS 78.67.Pt; 78.66.-W; 81.15.Cd     

Bilayer period effect on corrosion-erosion resistance for [TiN/AlTiN]n multilayered growth on AISI 1045 steel

The aim of this work is to study the electrochemical behavior, under a corrosion-erosion condition, of [TiN/AlTiN]_n multilayer coatings with bilayers periods of 1, 6, 12 and 24, deposited by a magnetron sputtering technique on Si (1 0 0) and AISI 1045 steel substrates.The TiN and AlTiN structure for multilayer coatings were evaluated via X-ray diffraction (XRD) analysis. Silica particles were used as an abrasive in the corrosion-erosion test within a 0.5 M H₂SO₄ solution at an impact angle of 30° over the surface. The electrochemical characterization was carried out using a polarization resistance technique (Tafel), in order to observe changes in the corrosion rate as a function of the bilayers number (n) or bilayer period (Λ). Corrosion rate values of 359 mpy in uncoated steel substrate and 1.016×10⁻⁶ mpy for substrate coated with [TiN/AlTiN]₂₄ under impact angle of 30° were found. This behavior was related with the mass loss curve for all coatings and the surface damage was analyzed using SEM images. These results indicate that TiN/AlTiN multilayer coatings deposited on AISI 1045 steel provide a practical solution for applications in erosive-corrosive environments.     

Light extraction via leaky modes in organic light emitting devices

Display and illumination technology require light sources with angular independent emission behaviour. Conversely, a strongly angular dependent spectral emission can be desirable for other applications in information technology or spectroscopy. In order to elucidate the potential of organic light-emitting devices (OLEDs) for the latter fields, we performed experimental and numerical studies of the angular dependent emission characteristics of cavity like OLEDs. The light generated in the organic multilayer structure and guided in leaky modes was coupled out by a prism. Here, a semitransparent gold anode, acting as a hole injection layer, was used to enhance the coupling of leaky modes guided inside the OLED to external modes (Kretschmann configuration). The observed light emission was strongly angle dependent, with the spectral emission peak of the device shifting from a wavelength of 680 nm to 500 nm as the angle is varied between 20° and 70° with respect to the normal of the substrate plane. Also, the emitted light shows a high degree of polarization. The observed behaviour can be predicted quantitatively by simulations, which are based on the transfer matrix formalism.     

Thermal stability of Mo/Si multilayer soft-X-ray mirrors fabricated by electron-beam evaporation

Mo/Si multilayers are fabricated by electron-beam evaporation in UHV at different temperatures (30° C, 150° C, 200° C) during deposition. After completion their thermal stability is tested by baking them at temperatures (T _bak) between 200° C and 800° C in steps of 50° C or 100° C. After each baking step the multilayers are characterized by small angle Cu_K-X-ray diffraction. Additionally, the normal incidence soft-X-ray reflectivity for wavelengths between 11 nm and 19 nm is determined after baking at 500° C. Furthermore, the layer structure of the multilayers is investigated by means of Rutherford Backscattering Spectroscopy (RBS) and sputter/Auger Electron Spectroscopy (AES) technique. While the reflectivity turns out to be highest for a deposition temperature of 150° C, the thermal stability of the multilayer increases with deposition temperature. The multilayer deposited at 200° C stands even a 20 min 500° C baking without considerable changes in the reflectivity behaviour.     

Influence of a carbon over-coat on the X-ray reflectance of XEUS mirrors

We describe measurements of the X-ray reflectance in the range 2-10 keV of samples representative of coated silicon wafers that are proposed for the fabrication of the X-ray evolving universe spectrometer (XEUS) mission. We compare the reflectance of silicon samples coated with bare Pt, with that for samples with an additional 10 nm thick carbon over-coating. We demonstrate a significant improvement in reflectance in the energy range ∼1-4 keV, and at a grazing incidence angle of 10 mrad (0.57°). We consider the resulting effective area that could be attained with an optimized design of the XEUS telescope. Typically an improvement of 10-60% in effective area, depending on photon energy, can be achieved using the carbon overcoat.     

Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

Very thin (nanometric) silicon layers were grown in between silicon nitride barriers by SiH₂Cl₂/H₂/NH₃ plasma-enhanced chemical vapor deposition (PECVD). The multilayer structures were deposited onto fused silica and silicon substrates. Deposition conditions were selected to favor Si cluster formation of different sizes in between the barriers of silicon nitride. The samples were thermally treated in an inert atmosphere for 1 h at 500 °C for dehydrogenation. Room-temperature photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical properties of the structures. UV-VIS absorption spectra present two band edges. These band edges are well fitted by the Tauc model typically used for amorphous materials. RT-PL spectra are characterized by strong broad bands, which have a blue shift as a function of the deposition time of the silicon layer, even for as-grown samples. The broad luminescence could be associated with the confinement effect in the silicon clusters. After annealing of the samples, the PL bands red shift. This is probably due to the thermal decomposition of N-H bonds with further effusion of hydrogen and better nitrogen passivation of the nc-Si/SiN_x interfaces.     

Growth and characterization of Cd1−xZnxTe thin films prepared from elemental multilayer deposition

Cd_1−xZn_xTe is a key material for fabrication of high-energy radiation detectors and optical devices. Conventionally it is fabricated using single crystal growth techniques. The method adopted here is the deposition of elemental multilayer followed by thermal annealing in vacuum. The multilayer structure was annealed at different temperatures using one to five repetitions of Cd-Zn-Te sequence. X-ray diffraction pattern for the multilayer with five repetitions revealed that annealing at 475 °C yielded single-phase material compared to other annealing conditions. EDX spectroscopy was carried out to study the corresponding compositions. Photoluminescence properties and change of resistance of the multilayer under illumination were also studied. The resistivity of the best sample was found to be a few hundreds of Ω cm.     

Correlation between microstructure and optical properties of nano-crystalline TiO2 thin films prepared by sol-gel dip coating

Titanium dioxide thin films have been prepared from tetrabutyl-orthotitanate solution and methanol as a solvent by sol-gel dip coating technique. TiO₂ thin films prepared using a sol-gel process have been analyzed for different annealing temperatures. Structural properties in terms of crystal structure were investigated by Raman spectroscopy. The surface morphology and composition of the films were investigated by atomic force microscopy (AFM). The optical transmittance and reflectance spectra of TiO₂ thin films deposited on silicon substrate were also determined. Spectroscopic ellipsometry study was used to determine the annealing temperature effect on the optical properties and the optical gap of the TiO₂ thin films. The results show that the TiO₂ thin films crystallize in anatase phase between 400 and 800 °C, and into the anatase-rutile phase at 1000 °C, and further into the rutile phase at 1200 °C. We have found that the films consist of titanium dioxide nano-crystals. The AFM surface morphology results indicate that the particle size increases from 5 to 41 nm by increasing the annealing temperature. The TiO₂ thin films have high transparency in the visible range. For annealing temperatures between 1000 and 1400 °C, the transmittance of the films was reduced significantly in the wavelength range of 300-800 nm due to the change of crystallite phase and composition in the films. We have demonstrated as well the decrease of the optical band gap with the increase of the annealing temperature.     

Wideband film polarizer design

The reflection and transmittance of s- and p-polarized lights should be treated separately at nonzero angle incidence. By choosing two special film materials whose refractive indices meet the Brewster condition in a given incident angle, the reflection of p-polarized light can be eliminated. When the two materials are fabricated into multilayer stacks, the reflection of s-polarized light can be largely increased while the reflection of p-polarized light keeps low. According to this principle, a film polarizer with bandwidth of 198 nm or even more is designed.     

基于p偏振光双面反射的薄膜传感器光学参数的优化

ｐ偏振光在镀膜平板玻璃上、下表面反射光强比γ的角度调制曲线的性状与膜层光学参数密切相关。分析了γ与膜层折射率、消光系数及膜厚的相对梯度随光参数变化的着急为基于ｐ偏振光双面反射的薄膜传感器选择最佳参数提供了理论依据,计算表明该类型传感器对膜层折射率的测量分辨率高达１０＾－７。对不同工艺条件下得到的溶胶－凝胶ＳｎＯ２膜进行光学参数测定及初步气敏实验,结果表明ｐ偏振光双面反射可作为高灵敏度光化学传感器的     

Investigation on preparation and physical properties of nanocrystalline Si/SiO2 superlattices for Si-based light-emitting devices

Structures containing silicon nanocrystals (nc-Si) are very promising for Si-based light-emitting devices. Using a technology compatible with that of silicon, a broader wavelength range of the emitted photoluminescence (PL) was obtained with nc-Si/SiO₂ multilayer structures. The main characteristic of these structures is that both layers are light emitters. In this study we report results on a series of nc-Si/SiO₂ multilayer periods deposited on 200 nm thermal oxide SiO₂/Si substrate. Each period contains around 10 nm silicon thin films obtained by low-pressure chemical vapour deposition at T=625°C and 100 nmSiO₂ obtained by atmospheric pressure chemical vapour deposition T=400°C. Optical and microstructural properties of the multilayer structures have been studied by spectroscopic ellipsometry (using the Bruggemann effective medium approximation model for multilayer and multicomponent films), FTIR and UV–visible reflectance spectroscopy. IR spectroscopy revealed the presence of SiO_x structural entities in each nc-Si/SiO₂ interface. Investigation of the PL spectra (using continuous wave-CW 325 nm and pulsed 266 nm laser excitation) has shown several peaks at 1.7, 2, 2.3, 2.7, 3.2 and 3.7 eV, associated with the PL centres in SiO₂, nc-Si and Si–SiO₂ interface. Their contribution to the PL spectra depends on the number of layers in the stack.